IBM01181651M
Abstract: IBM0118165B1M IBM0118165M1M IBM0118165P1M ibm 9398
Text: Discontinued 9/98 - last order; 3/99 last ship IBM01181651M x 1610/10, 5.0V, EDOMMDD59DSU-001014332. IBM0118165P1M x 1610/10, 3.3V, EDO, LP, SRMMDD59DSU-001014332. IBM0118165M1M x 1610/10, 5.0V, EDO, LP, SRMMDD59DSU-001014332. IBM0118165B1M x 1610/10, 3.3V, EDOMMDD59DSU-001014332.
|
Original
|
PDF
|
IBM01181651M
EDOMMDD59DSU-001014332.
IBM0118165P1M
SRMMDD59DSU-001014332.
IBM0118165M1M
IBM0118165B1M
IBM0118165
IBM0118165M
ibm 9398
|
IBM0144401M
Abstract: IBM014440M1M IBM014440P1M
Text: IBM0144401M x 410/10, 5.0V, QUAD CAS. IBM014440P1M x 410/10, 3.3V, QUAD CAS, LP, SR. IBM014440M1M x 410/10, 5.0V, QUAD CAS, LP, SR. IBM014440 IBM014440M IBM014440P 1M x 4 10/10 QUAD CAS DRAM Features • 1,048,576 word by 4 bit organization • Low Power Dissipation
|
Original
|
PDF
|
IBM0144401M
IBM014440P1M
IBM014440M1M
IBM014440
IBM014440M
IBM014440P
|
IBM0144051M
Abstract: IBM014405B1M IBM014405M1M IBM014405P1M
Text: IBM0144051M x 410/10, 5.0V, EDO. IBM014405P1M x 410/10, 3.3V, EDO, LP, SR. IBM014405M1M x 410/10, 5.0V, EDO, LP, SR. IBM014405B1M x 410/10, 3.3V, EDO. IBM014445 IBM014445B 1M x 4 10/10 QUAD CAS EDO DRAM Features • Standard Power • Low Power Dissipation
|
Original
|
PDF
|
IBM0144051M
IBM014405P1M
IBM014405M1M
IBM014405B1M
IBM014445
IBM014445B
|
IBM01174004M
Abstract: IBM0117400B4M IBM0117400M4M IBM0117400P4M
Text: IBM01174004M x 411/11, 5.0V. IBM0117400P4M x 411/11, 3.3V, LP, SR. IBM0117400M4M x 411/11, 5.0V, LP, SR. IBM0117400B4M x 411/11, 3.3V. IBM0117400 IBM0117400M IBM0117400B IBM0117400P 4M x 4 11/11 DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply
|
Original
|
PDF
|
IBM01174004M
IBM0117400P4M
IBM0117400M4M
IBM0117400B4M
IBM0117400
IBM0117400M
IBM0117400B
IBM0117400P
|
IBM0165405BJ5B-50
Abstract: IBM0165405BJ5B-60 IBM0165405P16M IBM0165405B16M
Text: IBM0165405B16M x 412/12, 3.3V, EDO. IBM0165405P16M x 412/12, 3.3V, LP, SR, EDO. IBM0165405B IBM0165405P 16M x 4 12/12 EDO DRAM Features • 16,777,216 word by 4 bit organization • Read-Modify-Write • Single 3.3 ± 0.3V power supply • Performance: • Extended Data Out Hyper Page Mode
|
Original
|
PDF
|
IBM0165405B16M
IBM0165405P16M
IBM0165405B
IBM0165405P
104ns
IBM0165405BJ5B-50
IBM0165405BJ5B-60
|
IBM01164004M
Abstract: IBM0116400B4M IBM0116400M IBM0116400P
Text: IBM01164004M x 412/10, 5.0V. IBM0116400P 4M x 412/10, 3.3V, LP, SR. IBM0116400M 4M x 412/10, 5.0V, LP, SR. IBM0116400B4M x 412/10, 3.3V. IBM0116400 IBM0116400M IBM0116400B IBM0116400P 4M x 4 12/10 DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply
|
Original
|
PDF
|
IBM01164004M
IBM0116400P
IBM0116400M
IBM0116400B4M
IBM0116400
IBM0116400M
IBM0116400B
IBM0116400P
|
lp 1610
Abstract: IBM01181651M IBM0118165B1M IBM0118165M1M IBM0118165P1M
Text: IBM01181651M x 1610/10, 5.0V, EDO. IBM0118165P1M x 1610/10, 3.3V, EDO, LP, SR. IBM0118165M1M x 1610/10, 5.0V, EDO, LP, SR. IBM0118165B1M x 1610/10, 3.3V, EDO. IBM0118165 IBM0118165M IBM0118165B IBM0118165P 1M x 16 10/10 EDO DRAM Features • 1,048,576 word by 16 bit organization
|
Original
|
PDF
|
IBM01181651M
IBM0118165P1M
IBM0118165M1M
IBM0118165B1M
IBM0118165
IBM0118165M
IBM0118165B
IBM0118165P
lp 1610
|
4221 transistor datasheet
Abstract: IBM01178052M IBM0117805B2M IBM0117805M2M IBM0117805P2M
Text: IBM01178052M x 811/10, 5.0V, EDO. IBM0117805P2M x 811/10, 3.3V, EDO, LP, SR. IBM0117805M2M x 811/10, 5.0V, EDO, LP, SR. IBM0117805B2M x 811/10, 3.3V, EDO. IBM0117805 IBM0117805M IBM0117805B IBM0117805P 2M x 8 11/10 EDO DRAM Features • 2,097,152 word by 8 bit organization
|
Original
|
PDF
|
IBM01178052M
IBM0117805P2M
IBM0117805M2M
IBM0117805B2M
IBM0117805
IBM0117805M
IBM0117805B
IBM0117805P
4221 transistor datasheet
|
IBM0164405B16M
Abstract: IBM0164405BJ5B-50 IBM0164405BJ5B-60 IBM0164405P16M
Text: IBM0164405B16M x 413/11, 3.3V, EDO. IBM0164405P16M x 413/11, 3.3V, LP, SR, EDO. IBM0164405B IBM0164405P 16M x 4 13/11 EDO DRAM Features • 16,777,216 word by 4 bit organization • Read-Modify-Write • Single 3.3 ± 0.3V power supply • Performance: • Extended Data Out Hyper Page Mode
|
Original
|
PDF
|
IBM0164405B16M
IBM0164405P16M
IBM0164405B
IBM0164405P
128ms
104ns
IBM0164405BJ5B-50
IBM0164405BJ5B-60
|
IBM0165405B16M
Abstract: IBM0165405BJ3C-50 IBM0165405BJ3C-60 IBM0165405P16M TSOP-32
Text: IBM0165405B16M x 412/12, 3.3V, EDO. IBM0165405P16M x 412/12, 3.3V, LP, SR, EDO. IBM0165405B IBM0165405P 16M x 4 12/12 EDO DRAM ADVANCED Features • 16,777,216 word by 4 bit organization • Read-Modify-Write • Single 3.3 ± 0.3V power supply • Performance:
|
Original
|
PDF
|
IBM0165405B16M
IBM0165405P16M
IBM0165405B
IBM0165405P
104ns
SA14-4238-02
IBM0165405BJ3C-50
IBM0165405BJ3C-60
TSOP-32
|
Untitled
Abstract: No abstract text available
Text: IBM014405 IBM014405B 1 M x 4 10/10 EDO DRAM Features • 1,048,576 word by 4 bit organization - Active max - 95 mA / 80 mA (3.3V) - 85 mA / 70 mA (5.0V) - Standby Current: TTL Inputs (max) - 2.0 mA - Standby Current: CMOS Inputs (max) - 1.0 mA • Power Supply: 3.3V ± 0.3V or 5.0V ± 0.5V
|
OCR Scan
|
PDF
|
IBM014405
IBM014405B
SOJ-26/20
300mil)
-70ns.
27H6242
SA14-4232-04
|
Untitled
Abstract: No abstract text available
Text: IBM0164805B IBM0164805P 8 M x 8 13/10 EDO DRAM Features • 8,388,608 word by 8 bit organization Read-Modify-Write • Single 3.3 ± 0.3V power supply Performance: • Extended Data Out Hyper Page Mode CAS before RAS Refresh - 4096 cycles/Retention Time
|
OCR Scan
|
PDF
|
IBM0164805B
IBM0164805P
128ms
104ns
128ms
115ma
100ma;
|
Untitled
Abstract: No abstract text available
Text: IBM0117400 IBM0117400M IBM0117400B IBM0117400P 4M x 4 11/11 DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 2048 Refresh Cycles - 32 ms Refresh Rate (SP version)
|
OCR Scan
|
PDF
|
IBM0117400
IBM0117400M
IBM0117400B
IBM0117400P
300jiA
Add43G9649.
350ns
|
Untitled
Abstract: No abstract text available
Text: IBM014440 IBM014440M IBM014440P 1M x 4 10/10 QUAD CAS DRAM Features • 1,048,576 word by 4 bit organization • Low Power Dissipation - Active max - 95 mA / 80 mA (3.3V) - 85 mA / 70 mA (5.0V) - Standby Current: TTL Inputs (max) - 2.0 mA (SP version) - 1.0 mA (IP version)
|
OCR Scan
|
PDF
|
IBM014440
IBM014440M
IBM014440P
DDD1777
82F6673
|
|
|
Untitled
Abstract: No abstract text available
Text: IBM0116165 IBM0116165M IBM0116165B IBM0116165P 1 M x 16 12/8 EDO DRAM Features • 1,048,576 word by 16 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)
|
OCR Scan
|
PDF
|
IBM0116165
IBM0116165M
IBM0116165B
IBM0116165P
115ns
100ns.
200nA
|
Untitled
Abstract: No abstract text available
Text: IBM0117800 IBM0117800M IBM0117800B IBM0117800P 2 M x 8 11/10 DRAM Features • 2,097,152 word by 8 bit organization • Single 3.3V ± 0 .3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 2048 Refresh Cycles - 32 ms Refresh Rate (SP version)
|
OCR Scan
|
PDF
|
IBM0117800
IBM0117800M
IBM0117800B
IBM0117800P
350ns
350ns)
|
Untitled
Abstract: No abstract text available
Text: IB M 0 1 5 1 6 0 IB M 0 1 5 1 6 1 256K X 16 DRAM Features • 256K X • 66MHz EDO performance 16 DRAM • Non-Persistent WPBM mode • Performance: Parameter -40 -50 -60 tRP RE Precharge 20ns 25ns 30ns tCAC Access Time from CË 12ns 14ns 15ns Ua Column Address Access
|
OCR Scan
|
PDF
|
66MHz
110ns
SOJ-40
27H6280
SA14-4243-00
IBM015160
IBM015161
SA14-4243-01
|
Untitled
Abstract: No abstract text available
Text: IBM0116400 IBM0116400M IBM0116400B IBM0116400P 4M x 4 12/10 DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 4096 Refresh Cycles - 64 ms Refresh Rate (SP version)
|
OCR Scan
|
PDF
|
IBM0116400
IBM0116400M
IBM0116400B
IBM0116400P
SA14-4203-06
200nA
|
0118165BJ3
Abstract: No abstract text available
Text: IBM0118165 IBM0118165M IBM0118165B IBM0118165P 1 M x 16 1 0 /1 0 E D O D R A M Features • 1,048,576 w ord by 16 bit organization • Low Power D issipation - Active max - 185 mA /1 6 5 mA /1 4 0 mA _ s ta n d b y : TTL Inputs (max) - 1.0 mA • Single 3.3V ± 0.3V or 5.0V ± 0.5V pow er supply
|
OCR Scan
|
PDF
|
IBM0118165
IBM0118165M
IBM0118165B
IBM0118165P
0118165BJ3
|
0117805
Abstract: No abstract text available
Text: IBM0117805 IBM0117805M IBM0117805B IBM0117805P 2M x 8 11/10 EDO DRAM Features • 2,097,152 word by 8 bit organization • Single 3.3V + 0.3V or 5.0V + 0.5V power supply • Standard Power SP and Low Power (LP) • 2048 Refresh Cycles - 32 ms Refresh Rate (SP version)
|
OCR Scan
|
PDF
|
IBM0117805
IBM0117805M
IBM0117805B
IBM0117805P
400mm
0117805
|
trw 1014
Abstract: ibm dram
Text: IBM0118165 IBM0118165M IBM0118165B IBM0118165P 1M x 16 10/10 EDO DRAM Features • 1,048,576 wordby 16 bit organization • Low Power Dissipation - Active max - 130 mA /1 0 5 mA . Standby: TTL Inputs (max) - 1.0 mA " Standby: CMOS Inputs (max) - 1 0 mA (SP version)
|
OCR Scan
|
PDF
|
IBM0118165
IBM0118165M
IBM0118165B
IBM0118165P
200VA
SA14-4223-06
IBM0118165B
trw 1014
ibm dram
|
Untitled
Abstract: No abstract text available
Text: IBM0165805B IBM0165805P ADVANCED 8M x 8 12/11 E D O D R A M Features • 8,388,608 word by 8 bit organization Read-Modity-Write • Single 3.3 ± 0.3V power supply Performance: • Extended Data Out Hyper Page Mode CAS before RAS Refresh - 4096 cycles/Retention Time
|
OCR Scan
|
PDF
|
IBM0165805B
IBM0165805P
104ns
256ms
400fiA)
414mW
SA14-4241
|
0118165
Abstract: No abstract text available
Text: IBM0118165 IBM0118165M IBM0118165B IBM0118165P 1 M x 16 10/10 EDO DRAM Features • 1,048,576 word by 16 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 1024 Refresh Cycles - 16 ms Refresh Rate (SP version)
|
OCR Scan
|
PDF
|
IBM0118165
IBM0118165M
IBM0118165B
IBM0118165P
0118165B
400mil;
0118165
|
Untitled
Abstract: No abstract text available
Text: IB M 0 1 1 6 1 6 5 IB M 0 1 1 6 1 6 5 M IB M 0 1 1 6 1 6 5 B IB M 0 1 1 6 1 6 5 P 1M x 16 12/8 EDO DRAM Features • • 1 ,0 4 8 ,5 7 6 w ord by 16 bit organization • S ingle 3 .3 V ± 0 .3 V or 5 .0 V ± 0 .5 V pow er supply • S tan dard P o w e r S P and Low P ow er (LP)
|
OCR Scan
|
PDF
|
400mil;
IBM0116165M
IBM0116165B
IBM0116165P
|