SA102 EQUIVALENT Search Results

SA101

Abstract: SA102
Contextual Info: SA series, high-precision, Pt-film thermal sensors. Resistance tolerance of Ϯ0.06% class A . Suitable for high-precision temperature measurements up to 500ЊC. Available in various package for specific needs. SPECIFICATIONS Dimension (mm) L W P T Mechanical

Contextual Info: SA series, high-precision, Pt-film thermal sensors. Resistance tolerance of Ϯ0.06% class A suitable for high-precision temperature measurements up to 500ЊC. Available in various package for specific needs. SPECIFICATIONS Dimension (mm) L W P T Mechanical

Contextual Info: SE series, high-precision, Pt-film thermal sensors. Resistance tolerance of +/-0.06% class A suitable for high-precision temperature measurements up to 500 degree C. Available in various package for specific needs. SPECIFICATIONS Dimension (mm) L W P T Mechanical

Contextual Info: SA series, high-precision, Pt-film thermal sensors. Resistance tolerance of Ϯ0.06% class A . Suitable for high-precision temperature measurements up to 500ЊC. Available in various package for specific needs. SPECIFICATIONS Dimension (mm) L W P T Mechanical

SE102

Abstract: SE10255 sa102 equivalent
Contextual Info: SE series, high-precision, chiptype Pt-film thermal sensors. A surface-mount type with an excellent +/-0.48% resistance tolerance ideal for high-precision temperature measurement. SPECIFICATIONS Mechanical 1206 W P Dimension (mm) L W P T SE102* 3.20Ϯ0.20

SE102

Contextual Info: SE series, high-precision, chiptype Pt-film thermal sensors. A surface-mount type with an excellent Ϯ0.48% resistance tolerance ideal for high-precision temperature measurement. SPECIFICATIONS Mechanical 1206 W P Dimension (mm) L W P T SE102* 3.20Ϯ0.20

4kw marking

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.3E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 64M (x16) FLASH MEMORY & 4M (×16) STATIC RAM MB84VD23180FM-70 • FEATURES • Power supply voltage of 2.7 V to 3.1 V • High performance 70 ns maximum access time (Flash)

SGA29

Abstract: 32-KW Load Bank SA133 MBM29DL640E SA72 SA136
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50301-1E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x ×16) FLASH MEMORY & 16 M (× ×16) Mobile FCRAMTM MB84VD23381EF-85 • FEATURES • Power Supply Voltage of 2.7 V to 3.0 V for FCRAM • Power Supply Voltage of 2.7 V to 3.3 V for Flash

SA136

Abstract: SGA29 sA117 4kw marking SA97 Sa98 MB84VD23280FC-70 MBM29DL64DF SGA43 SA133
Contextual Info: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

SA101

Abstract: 4kw marking Diode SA98 SA102 Sa98 MB84VD23180FM-70 MBM29DL64DF
Contextual Info: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

VCCF02

Abstract: sA117 SA97 S-A106 sa123 SA124 Sa84 MBM29BS64LF SA125 SA101
Contextual Info: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

BGA-101P-M01

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-2E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power Supply Voltage of 2.3 V to 2.7 V for Flash • Power Supply Voltage of 2.3 V to 2.7 V for FCRAM

4kw marking

Contextual Info: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

32 KB SRAM

Abstract: DS05-50208-1E SWITCH SA125
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-1E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power supply voltage of 2.3 to 2.7 V for FCRAM • Power supply voltage of 2.3 to 2.7 V for Flash

32 KB SRAM

Abstract: MBM29DL640E
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50209-2E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M ( x 16) FLASH MEMORY & 16 M ( × 16) SRAM Interface FCRAM MB84VD23381EJ-90 • FEATURES • Power supply voltage of 2.7 V to 3.1 V for FCRAM • Power supply voltage of 2.7 V to 3.3 V for Flash

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50210-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 64 M (x ×8/× ×16) FLASH MEMORY & 8 M (× ×8/× ×16) STATIC RAM MB84LD23280EA-10/MB84LD23280EE-10 • FEATURES • Power supply voltage of 2.3 V to 2.7 V

Contextual Info: MB84VD23381FJ-80 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50221-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 64 M (x ×8/× ×16) FLASH MEMORY & 8 M (× ×8/× ×16) STATIC RAM MB84VD23280FA-70 • FEATURES • • • • • Power Supply Voltage of 2.7 V to 3.1 V

Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-3E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power Supply Voltage of 2.3 V to 2.7 V for Flash

Contextual Info: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-3E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power Supply Voltage of 2.3 V to 2.7 V for Flash • Power Supply Voltage of 2.3 V to 2.7 V for FCRAM

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50211-4E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 64M (x8/×16) FLASH MEMORY & 8M (×8/×16) STATIC RAM MB84VD23280EA/EE-85/90 • FEATURES • Power supply voltage of 2.7 V to 3.3 V • High performance

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50221-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 64 M (x ×8/× ×16) FLASH MEMORY & 8 M (× ×8/× ×16) STATIC RAM MB84VD23280FA-70 • FEATURES • • • • • Power Supply Voltage of 2.7 V to 3.1 V

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50211-3E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 64M (x8/×16) FLASH MEMORY & 8M (×8/×16) STATIC RAM MB84VD23280EA/EE-85/90 • FEATURES • Power supply voltage of 2.7 V to 3.3 V • High performance