S9013LT1 Search Results

S9013LT1 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
S9013LT1		Unknown	TRANSISTOR (NPN)		Scan	PDF

S9013LT1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
S9013LT1 Contextual Info: S9013LT1 3 P b Lead Pb -Free 1 2 SOT-23 V CEO Value 25 40 5.0 500 S9013LT1=J3 25 0.1 40 100 100 E=20 Vdc, I E= 0 O ) 40 5.0 WEITRON http://www.weitron.com.tw 1/3 0.1 u 0.1 u 0.1 u Rev.A 13-May-05 S9013LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)	Original	S9013LT1 OT-23 S9013LT1 13-May-05 50mAdc)	PDF
Contextual Info: S9012LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd * * * TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR Complement to S9013LT1 Package:SOT-23 Collector Current :Ic= -500mA High Total Power Dissipation :Pc=225mW ABSOLUTE MAXIMUM RATINGS at Ta=25℃	Original	S9012LT1 S9013LT1 OT-23 -500mA 225mW -50mA -500mA	PDF
Contextual Info: S9013LT1 3 1 2 SOT-23 V CEO Value 25 40 5.0 500 S9013LT1=J3 25 0.1 40 100 100 E=20 Vdc, I E= 0 40 5.0 WEITRON http://www.weitron.com.tw O 0.1 u 0.1 u 0.1 u S9013LT1 ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted) (Countinued) Characteristics	Original	S9013LT1 OT-23 S9013LT1 50mAdc)	PDF
Contextual Info: S9013LT1 3 * “G” Lead Pb -Free 1 2 SOT-23 V CEO Value 25 40 5.0 500 S9013LT1=J3 25 0.1 40 100 100 O E=20 Vdc, I E= 0 ) 40 5.0 WEITRON http://www.weitron.com.tw 1/3 0.1 u 0.1 u 0.1 u Rev.A 13-May-05 S9013LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)	Original	S9013LT1 OT-23 S9013LT1 13-May-05 50mAdc) SMAL20uA	PDF
S9013LT1 Contextual Info: S9013LT1 TRANSISTOR NPN 1 .BASE 2 .EMITTER 3 .CO LLECTOR FEATURES Power dissipation Pcm : 0.3 W (Tamb=25°C) Collector current 0.5 A ICM: Collector-base voltage V(BR)CBo :40V Operating and storage junction temperature range Tj.Tstg :-55°C to+150°C UNIT: mm	OCR Scan	OT-23 S9013LT1 150eC S9013LT1 160uA 140uA 120uA 100uA	PDF
Contextual Info: S9013LT1 3 P b Lead Pb -Free 1 2 SOT-23 VCEO S9013PLT1=13P S9013QLT1=13Q Value 20 40 5.0 500 S9013RLT1=13R 0.1 S9013SLT1=13S 20 40 100 100 35 4.0 WEITRON http://www.weitron.com.tw 1/2 0.15 u 0.15 u 28-Apr-2011 S9013LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)	Original	S9013LT1 OT-23 S9013PLT1 S9013QLT1 S9013RLT1 S9013SLT1 28-Apr-2011 50mAdc) OT-23	PDF
s9013 Abstract: S9013LT1 Contextual Info: S9013LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd * * TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR Package:SOT-23 Complement to S9012LT1 Collector Current: Ic= 500mA High Total Power Dissipation: Pc=225Mw ABSOLUTE MAXIMUM RATINGS at Ta=25℃	Original	S9013LT1 OT-23 S9012LT1 500mA 225Mw 500mA 062in 300uS s9013 S9013LT1	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 S9013LT1 1. BASE TRANSISTOR（ NPN ） 2. EMITTER 3. COLLECTOR Parameter Symbol ０．９５０．４０．９５１．９２．４１．３２．９ Power dissipation	Original	OT-23 S9013LT1 037TPY 950TPY 550REF 022REF	PDF
S9013LT1 Abstract: MARKING E1 SOT23 TRANSISTOR Contextual Info: SOT-23 Plastic-Encapsulate Transistors SOT—23 S9013LT1 1. BASE TRANSISTOR（ NPN ） 2. EMITTER 3. COLLECTOR Parameter Symbol ０．９５０．４０．９５１．９２．４１．３２．９ Power dissipation PCM : 0.3 W（Tamb=25℃） Collector current	Original	OT-23 OT--23 S9013LT1 S9013LT1 037TPY 950TPY 550REF 022REF MARKING E1 SOT23 TRANSISTOR	PDF
transistor BR 9013 Abstract: 9013 NPN transistor 9013 H NPN Contextual Info: M C C S O T -2 3 P la s tic -E n c a p s u la te T r a n s is to r s ^ 1.BASE 2.EMITTER 3.COLLECTOR ." V S9013LT1 TRANSISTOR NPN 4 '" FEATURES Oi Power dissipation PcM: 0.3 W (Tamb=25'C) C ollector current ICM: 0 .5 A C ollector-base voltage V(BR)CBO:40V	OCR Scan	S9013LT1 Symbo350 S9013LT1 transistor BR 9013 9013 NPN transistor 9013 H NPN	PDF
Contextual Info: SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013LT1 1. BASE TRANSISTOR NPN 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 2. 4 1. 3 W (Tamb=25℃) 0. 95 0. 4 2. 9 Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range	Original	OT-23 OT-23 S9013LT1 500mA S9013LT1 30MHz	PDF
Transistor S8550 2TY Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6 Contextual Info: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250	Original	OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W Transistor S8550 2TY Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6	PDF
Y2 transistor Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882 Contextual Info: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123	Original	huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882	PDF