S9013 TO92 Search Results

Contextual Info: MCC TM Micro Commercial Components S9013-G S9013-H S9013-I
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.

S9013H

Abstract: s9013g npn Transistor
Contextual Info: MCC TM Micro Commercial Components S9013-G S9013-H S9013-I
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.

S9013H

Abstract: Transistor TO-92 S9013H S9013G
Contextual Info: MCC TM Micro Commercial Components S9013-G S9013-H S9013-I
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.

s9013 transistor

Abstract: Transistor S9013 S9013 S9013 equivalent 0625W 112166 data sheet transistor s9013 S9013 to-92 s9013transistor S9013 TO92
Contextual Info: S9013 S9013 TRANSISTOR NPN TO-92 FEATURE Power dissipation 1. EMITTER 2. BASE PCM: 0.625 W (Tamb=25℃) 3. COLLECTOR Collector current ICM: 0.5 A Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range Tj, Tstg: 1 2 3 -55℃ to +150℃

S9013H

Abstract: transistor s9013h S9013G s9013g npn Transistor Transistor TO-92 S9013H
Contextual Info: MCC S9013-G S9013-H S9013-I
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.

S9013H

Abstract: s9013g npn Transistor S9013G
Contextual Info: MCC S9013-G S9013-H S9013-I
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.

Contextual Info: | FORWARD INTERNATIONAL ELECTRONICS LID. S9013 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. Package: TO-92 * Complement to S9012 * Collector Current: Ic=500mA * High Total Power Dissipation: ptH>25mW

transistor s9012

Abstract: S9012 H14-4 S9012 to-92 S9012 TO92 S9012 data sheet S9013 S9013 to-92 s9013 transistor transistor TO-92 S9013
Contextual Info: S9012 PNP EPITAXIAL SILICON TRANSISTOR General Purpose Application TO-92 Collector Current Ic=-500mA Collector Power Dissipation Pc=625mW Complementary to S9013 Ta=25oC ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Value Unit Collector-Base Voltage VCBO

s9013 transistor

Abstract: transistor S9013 S9013 transistor TO-92 S9013 S9013 TO92 data sheet transistor s9013 S9012
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN TO-92 FEATURE z Complementary to S9012 z Excellent hFE linearity 1. EMITTER 2. BASE MAXIMUM RATINGS TA=25℃ unless otherwise noted 3. COLLECTOR

transistor s9012

Abstract: S9012 S9012 equivalent Transistor S9013 S9013 S9012 to-92
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors S9012 TO-92 TRANSISTOR PNP FEATURES Complementary to S9013 z Excellent hFE linearity 1. EMITTER z 2. BASE 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN TO-92 FEATURE z Complementary to S9012 z Excellent hFE linearity 1. EMITTER 2. BASE MAXIMUM RATINGS Ta=25℃ unless otherwise noted 3. COLLECTOR

S9013

Abstract: S9013 TO92
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN TO-92 FEATURE z Complementary to S9012 z Excellent hFE linearity 1. EMITTER 2. BASE MAXIMUM RATINGS TA=25℃ unless otherwise noted 3. COLLECTOR

s9013 transistor

Abstract: S9013 transistor S9013 f-30MHz transistor s9012
Contextual Info: S9013 Transistor NPN TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features — Complementary to S9012 Excellent hFE linearity — MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO VEBO Collector-Emitter Voltage

transistor s9012

Abstract: S9012
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD T TO-92 Plastic-Encapsulate Transistors S9012 TO-92 TRANSISTOR PNP FEATURES Complementary to S9013 z Excellent hFE linearity 1. EMITTER z 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

S9012 TO92

Abstract: S9012
Contextual Info: S9012 PNP TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Complementary to S9013 Excellent hFE linearity MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage

S9013 equivalent

Abstract: Transistor S9013 s9013 transistor S9013 s9013 transistor datasheet S9013 data sheet data sheet transistor s9013 S9013 NPN Transistor transistor TO-92 S9013
Contextual Info: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 S9013 Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation. Collector-current 0.5A Collector-base Voltage 40V

transistor TO-92 S9013

Contextual Info: TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN TO-92 1. EMITTER FEATURE Power dissipation 2. BASE PCM: 0.625 W (Tamb=25℃) 3. COLLECTOR Collector current 0.5 A ICM: Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range

transistor S9013

Abstract: S9013 to-92 s9013 transistor S9013 equivalent S9013 S9013 data sheet data sheet transistor s9013
Contextual Info: S9013 TO-92 Plastic-Encapsulate Transistors Transistor NPN FEATURE Power dissipation o P CM :0.625 W (Tamb=25 C) Collector current I CM :0.5 A Collector-base voltage V (BR)CBO :40 V Operating and storage junction temperature range o o T J ,T stg :-55 C to +150 C

Contextual Info: S9012 SEMICONDUCTOR ~ TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR 1W O UTPUT A M PL IFIE R O F PO R TA B LE Package: TO-92 RA D IO S IN CLASS B PUSH-PULL O PER A TIO N . * Complement to S9013 * Collector Current :Ic=-50GmA * High Total Power Dissipation: pC=625mW

Contextual Info: M C C TO-92 P lastic-E n cap su late T ran sisto rs S9013 T R A N S IS T O R N P N F E A T UR E S J|p%er dissipation Pcm: 0.625W (Tamb=25°C) current Icm: -0.5 A voltage V(BR)CBO: 40 V n H l ttorage junction temperature range Tj.Tstg: -55°C to + 150°C

s9013 transistor

Abstract: S9013 59013 rfft
Contextual Info: TO-92 Plastic-Encapsulate Transistors ^ S9013 TR A N S IS TO R N P N FEATU RES p f *îîPy *‘V [D □ iS n u i A r g o w e r ¡z£%s<& Ë 3 V / TO-92 P cm ; > 11 u i \-h i p 1 0> V a t i o n ? w ïr* 0.625W (Tamb=25°C) 5 V - - 1 .E M IT T E R

S9013

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components S9013 Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components S9013 Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.

S9013 equivalent

Abstract: s9013 transistor S9013 transistor S9013 transistor TO-92 S9013 745173-2 data sheet transistor s9013 s9013 transistor datasheet
Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# S9013 Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation. Collector-current 0.5A