S6364 Search Results

ROM 2764

Abstract: eprom 2764 2764 rom 2764 eprom S6364 eprom circuit diagram 2764 block diagram
Contextual Info: 65,536 Bit 8192x8 Static CMOS ROM •> GOULD Electronics S6364 Features □ F a s t A c c e s s Time: 250ns M axim u m □ L o w S ta n d b y P o w e r 0.055m W M a x im u m □ F u lly S ta tic O p e ration □ S in g le + 5 V ± 10 % P o w e r S u p p ly

S6364

Contextual Info: Static CMOS Family of ROMs •Semiconductors S6364M March 1992 Table I: ELECTRICAL PERFORMANCE CHARACTERISTICS Conditions -55°C<TA<+125°C SYMBOL TEST 4.5V<Vcc<5.5V unless otherwise noted LIM ITS MIN M AX UNIT 0.4 Volts Output LOW Voltage l0i_=3.2mA Voi

Error Detection

Abstract: S632A
Contextual Info: Contents Page S N 7 4A L S 6 32 B SN 74A S632 SN 74A S632A SN 74A S6364 32-B it Parallel Error Detection and Correction Circuit . 32-B it Parallel Error Detection and Correction Circuit .

Contextual Info: static CMOS _ Family of ROMs March 1992 III AMI LOW DENSITY FAMILY OF ROMS Table 1: S6316 S6333/S63332 S63364 S6364 S63128 Process CMOS CMOS CMOS CMOS CMOS Capacity 16K 32K 64K 64K 128K Organization 2Kx 8 4Kx8 8Kx8 8Kx8 16Kx8 Compatible EPROM

2732 cmos eprom

Contextual Info: A M II.W — Static CMOS Family of ROMs _ March 1992 Table 4 continued : AMI LOW VOLTAGE FAMILY OF ROMS COMMERCIAL TEMPERATURE 0° to 70°C Device Name S63364L S6333L/32 S6316L CMOS CMOS CMOS CMOS 64K 64K 32K 16K Organization 8Kx8 8Kx8

Contextual Info: Si2320DS New Product Vishay Siliconix N-Channel 200-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 200 7 @ VGS = 10 V "0.28 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2320DS (D0)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

S6364

Abstract: ROM 23128
Contextual Info: static CMOS &NMOS Familyof ROMs -> GOULD AMI > Sem iconductors Features General Description • 16K, 32K, 64K, 128K, 256K, 512K, 1M, 2M, 4M Selections • Fast Access Time • Mate With State-Of-The-Art 32 Bit Microprocessors • Low Standby Power CMOS • Fully Static Operation

ami 10430

Abstract: AMI Semiconductor ROM 4G 16K24 18-CS2 IC SC 10429 ic rom 27128 S6364 26CS
Contextual Info: _ GOULD SEM ICO N D UCTO R » IV 4 0 5 5 9 1 6 G O U L D S E M I C O N D U C T O R DIV -> n n in n Q 3E D | 4 0 S S cl l b 03E 10420 DDIDM ED D Static CMOS & NMOS Family of ROMs Electronics Preliminary Data Sheet

Si2320DS

Contextual Info: Si2320DS New Product Vishay Siliconix N-Channel 200-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 200 7 @ VGS = 10 V "0.28 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2320DS (D0)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: Si2320DS New Product Vishay Siliconix N-Channel 200-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 200 7 @ VGS = 10 V "0.28 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2320DS (D0)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

S6364

Contextual Info: S6364 64-BIT FLOW-THRU ERROR DETECTION AND CORRECTION CIRCUIT D3312, FEBRUARY 1990-REVISED JUNE 1990 17 X 17 G A P A C K A G E TOP VIE W 12-ns Max Pass-Thru Operation W hen Used in Correct-O nly-O n-Error C onfigurations 9 10 11 12 13 14 15 16 17 Detects and Corrects Single-Bit Errors

ic 4069 pin configuration

Abstract: S63256 00001M7 S6316 S6364 S63512
Contextual Info: ASAHI KASEI MICROSYSTEMS M5E J> • QqflabBS 00001M7 3 WASHI Static CMOS & NMOS Family of ROMs Features • • • • • • • • • • • 16K, 32K, 64K, 128K, 256K, 512K Selections Fast Access Time Mate With State Of The Art 32 Bit Microprocessors

Si2320DS

Contextual Info: Si2320DS New Product Vishay Siliconix N-Channel 200-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 200 7 @ VGS = 10 V "0.28 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2320DS (D0)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: TMS626402, S636402 2097152-WORD BY 4-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS642 - FEBRUARY 1994 TMS6x6402-10 10 ns TMS6x6402-1212.5 ns TMS6x6402-15 15 ns 30 ns 35 ns 40 ns v Gc q [ 5 NC [ 6 Vs s q C 7 DQ1 [ 8 Vc c q E 9 NC C 10 NC [ 11

MAS 560 ag

Abstract: S63512 S6364 eprom 2532
Contextual Info: -> GOULD AiMlI Static CMOS & NMOS Family of ROMs Semiconductors December, 1990 Features General Description • 16K, 32K, 64K, 128K, 256K, 512K, 1M, 2M, 4M Selections • Fast Access Time • Mate With State-Of-The-Art 32 Bit Microprocessors • Low Standby Power CMOS

Contextual Info: SUP/SUB15P01-52 New Product Vishay Siliconix P-Channel 8-V D-S , 175_C MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.052 @ VGS = –4.5 V "15 8 –8 0.070 @ VGS = –2.5 V "10 0.105 @ VGS = –1.8 V "10.5 S TO-220AB TO-263 G DRAIN connected to TAB G