SUD50N04-06H
Abstract: No abstract text available
Text: SPICE Device Model SUD50N04-06H Vishay Siliconix N-Channel 40-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUD50N04-06H
18-Jul-08
SUD50N04-06H
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SUM110N05-06L
Abstract: No abstract text available
Text: SPICE Device Model SUM110N05-06L Vishay Siliconix N-Channel 55-V D-S , 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUM110N05-06L
18-Jul-08
SUM110N05-06L
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SUM40N02-12P
Abstract: No abstract text available
Text: SPICE Device Model SUM40N02-12P Vishay Siliconix N-Channel 20-V D-S , 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUM40N02-12P
18-Jul-08
SUM40N02-12P
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74182
Abstract: 74182 data sheet 74182 datasheet S-60675 Si4413ADY
Text: SPICE Device Model Si4413ADY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4413ADY
18-Jul-08
74182
74182 data sheet
74182 datasheet
S-60675
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SUD70N02-05P
Abstract: No abstract text available
Text: SPICE Device Model SUD70N02-05P Vishay Siliconix N-Channel 20-V D-S 175° MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUD70N02-05P
18-Jul-08
SUD70N02-05P
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SUM110N08-05
Abstract: No abstract text available
Text: SPICE Device Model SUM110N08-05 Vishay Siliconix N-Channel 75-V D-S 200°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUM110N08-05
S-60677Rev.
01-May-06
SUM110N08-05
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SUM110N06-05L
Abstract: No abstract text available
Text: SPICE Device Model SUM110N06-05L Vishay Siliconix N-Channel 60-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUM110N06-05L
-60676Rev.
01-May-06
SUM110N06-05L
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SUD50N04-07L
Abstract: No abstract text available
Text: SPICE Device Model SUD50N04-07L Vishay Siliconix N-Channel 40-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUD50N04-07L
S-60676Rev.
01-May-06
SUD50N04-07L
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SUM110N06-05L SPICE Device Model
Abstract: SUM110N06-05L
Text: SPICE Device Model SUM110N06-05L Vishay Siliconix N-Channel 60-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUM110N06-05L
18-Jul-08
SUM110N06-05L SPICE Device Model
SUM110N06-05L
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SUD50N03-09P
Abstract: 71001
Text: SPICE Device Model SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUD50N03-09P
18-Jul-08
SUD50N03-09P
71001
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SUD50N03-11
Abstract: No abstract text available
Text: SPICE Device Model SUD50N03-11 Vishay Siliconix N-Channel 30-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUD50N03-11
18-Jul-08
SUD50N03-11
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SUM110N08-05
Abstract: No abstract text available
Text: SPICE Device Model SUM110N08-05 Vishay Siliconix N-Channel 75-V D-S 200°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUM110N08-05
18-Jul-08
SUM110N08-05
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SUD50N03-11
Abstract: No abstract text available
Text: SPICE Device Model SUD50N03-11 Vishay Siliconix N-Channel 30-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUD50N03-11
S-60677Rev.
01-May-06
SUD50N03-11
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74155
Abstract: S-60675 applications of 74155
Text: SPICE Device Model Si3401DV Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si3401DV
18-Jul-08
74155
S-60675
applications of 74155
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SUM110N04-05H
Abstract: No abstract text available
Text: SPICE Device Model SUM110N04-05H Vishay Siliconix N-Channel 40-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUM110N04-05H
S-60676Rev.
01-May-06
SUM110N04-05H
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SUM85N03-08P
Abstract: No abstract text available
Text: SPICE Device Model SUM85N03-08P Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUM85N03-08P
S-60673Rev.
01-May-06
SUM85N03-08P
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bts 2140 1b data sheet
Abstract: SUM40N02-12P
Text: SPICE Device Model SUM40N02-12P Vishay Siliconix N-Channel 20-V D-S , 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUM40N02-12P
S-60673Rev.
01-May-06
bts 2140 1b data sheet
SUM40N02-12P
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CNC DRIVES
Abstract: CNC CIRCUIT DIAGRAM HP4192A J-STD-020B
Text: DG3516/DG3517 Vishay Siliconix New Product 300-MHz, 2.5-Ω, Dual SPDT Analog Switches DESCRIPTION FEATURES The DG3516/DG3517 are dual SPDT analog switches which operate from 1.8 V to 5.5 V single rail power supply. They are design for audio, video, and USB switching applications.
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DG3516/DG3517
300-MHz,
DG3516/DG3517
S-60672-Rev.
01-May-06
CNC DRIVES
CNC CIRCUIT DIAGRAM
HP4192A
J-STD-020B
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J-STD-020B
Abstract: 73320 DG3537DB-T5 DG3537DB-T5-E1
Text: DG3537/3538/3539/3540 Vishay Siliconix New Product 4-Ω, 360-MHz, Dual SPST Analog Switches DESCRIPTION FEATURES The DG3537/3538/3539/3540 are dual SPST analog switches which operate from 1.8 V to 5.5 V single rail power supply. They are design for audio, video, and USB switching
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DG3537/3538/3539/3540
360-MHz,
DG3537/3538/3539/3540
S-60672-Rev.
01-May-06
J-STD-020B
73320
DG3537DB-T5
DG3537DB-T5-E1
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SUM110P06-07L
Abstract: No abstract text available
Text: SPICE Device Model SUM110P06-07L Vishay Siliconix P-Channel 60-V D-S 175° MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUM110P06-07L
18-Jul-08
SUM110P06-07L
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SUD50N04-09H
Abstract: No abstract text available
Text: SPICE Device Model SUD50N04-09H Vishay Siliconix N-Channel 40-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUD50N04-09H
18-Jul-08
SUD50N04-09H
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T 2109
Abstract: S6064 intel 2117 2109 S6002 S6000 S6001 S6003 S6067
Text: in te i 2109 FA M ILY 8,192 x 1 BIT D Y N A M IC RAM 2109-3 S6000.S6001 2109-4 S6002.S6003 200 250 R ead, W rite C ycle ns 375 410 R e a d -M o d ify -W rite C ycle (ns) 375 475 M axim um Access T im e (ns) 8K R AM , Industry Std. 16-Pin Package ±10% T o lerance on All Pow er Supplies:
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S6000
S6001
S6002
S6003
16-Pin
462mW
T 2109
S6064
intel 2117
2109
S6003
S6067
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la 76805 volt on pin
Abstract: intel 8708 eprom M3002 Pulse M3001 eprom 8708 2316a rom UPP-103 interfacing 8275 crt controller with 8086 intel 1402a Pascall
Text: Intel Corporation 3065 Bowers Avenue • Santa Clara, CA 95051 Telephone: 408 987-8080 TWX: 910-338-0026- Telex: 34-6372 inter Component Data Catalog 1978 Numerical and Functional Indexes 1 General Information 2 Random Access Memory 3 Read Only Memory 4
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MCS-4/40â
MCS-48â
MCS-80/85â
-883B
la 76805 volt on pin
intel 8708 eprom
M3002
Pulse M3001
eprom 8708
2316a rom
UPP-103
interfacing 8275 crt controller with 8086
intel 1402a
Pascall
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17811a
Abstract: s6064
Text: inte« 2109 FAMILY 8,192 x 1 BIT DYNAMIC RAM 2109-3 2109-4 S6000.S6001 S6002.S6003 Maximum Access Time ns 200 250 Read, Write Cycle (ns) 375 410 Read-Modify-W rite Cycle (ns) 375 475 N o n-L atched O utput is T h ree-S tate, T T L C om patible 8K R A M , Industry Std. 16-Pin Package
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S6000
S6001
S6002
S6003
16-Pin
17811a
s6064
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