S5036 Search Results

nz104

Abstract: CRC-10 MSAN-126 MT90220 MT90220AL DST-06 NZ 622
Contextual Info: @ MT90220 M ITEL Octal IMA/UNI PHY Device S E M IC O N D U C T O R Features D S5036 ISSUE 4 D ecem ber 1999 Ordering Information • • • • • • • • • • Cost effective, single chip, 8-port ATM IMA and UNI processor Up to 4 IMA groups over 8 T1/E1 links can be

SC-75

Abstract: SC-75A SC-89 Si1012R-T1 Si1012X-T1
Contextual Info: Si1012R/X Vishay Siliconix N-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 20 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 D D D D D D SC-75A or SC-89 G S Pb-free Available BENEFITS D D D D D 1 3 TrenchFETr Power MOSFET: 1.8-V Rated

BROWN BOVERI

Abstract: R50320 S50310 R50310 R50330 R50340 R50360 S50320 S50330 S50340
Contextual Info: BBC •FMC B R O W N , B O V E R I & CIE AKTIENGESELLSCHAFT MANNHEIM Silicon Power Rectifiers BROWN BOVERI G eschäftsbereich H albleiter und S trom rich te r Telefon 06206 503-1, T elex 0 4 -6 5 7 2 7 Postfach 200, D -6840 Lam pertheim Series 503 250 Amperes Average

Si1419DH

Contextual Info: Si1419DH New Product Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −200 rDS(on) (W) ID (A) 5.0 @ VGS = −10 V −0.38 5.1 @ VGS = −6 V −0.37 D TrenchFETr Power MOSFETS D Small, Thermally Enhanced SC-70 Package D Ultra Low On-Resistance

Si5935DC

Abstract: Si5935DC-T1
Contextual Info: Si5935DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.086 @ VGS = −4.5 V −4.1 0.121 @ VGS = −2.5 V −3.4 0.171 @ VGS = −1.8 V −2.9 D TrenchFETr Power MOSFETS D Low rDS(on) Dual and Excellent

71055

Abstract: MAX 71055 D 71055 Si5441DC Si5441DC-T1
Contextual Info: Si5441DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.055 @ VGS = −4.5 V −5.3 0.06 @ VGS = −3.6 V −5.1 0.083 @ VGS = −2.5 V −4.3 D TrenchFETr Power MOSFET D 2.5-V Rated Qg (Typ) Pb-free

Contextual Info: Si4410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V 10 0.020 @ VGS = 4.5 V 8 D TrenchFETr Power MOSFET D 100% Rg Tested APPLICATIONS Pb-free Available D Battery Switch D Load Switch

Si5441DC

Abstract: Si5441DC-T1
Contextual Info: Si5441DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.055 @ VGS = −4.5 V −5.3 0.06 @ VGS = −3.6 V −5.1 0.083 @ VGS = −2.5 V −4.3 D TrenchFETr Power MOSFET D 2.5-V Rated Qg (Typ) Pb-free

Si5935DC

Abstract: Si5935DC-T1
Contextual Info: Si5935DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.086 @ VGS = −4.5 V −4.1 0.121 @ VGS = −2.5 V −3.4 0.171 @ VGS = −1.8 V −2.9 D TrenchFETr Power MOSFETS D Low rDS(on) Dual and Excellent

MMAS40GD

Contextual Info: MOTOROLA Order this document by MMAS40GD/D SEMICONDUCTOR TECHNICAL DATA MMAS40GD Micromachined *40g Accelerometer The MMAS40G family of silicon capacitive, micr~machined accelerometers features integral signal amplification, signal conditioning, a 4–pole low–pass

Contextual Info: Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Advanced High Cell Density Process PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.012 @ VGS = −10 V −11.4 APPLICATIONS 0.019 @ VGS = −4.5 V −9.1 D Load Switches

Si9407AEY

Contextual Info: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 60 rDS(on) (W) ID (A) 0.120 @ VGS = −10 V "3.5 0.15 @ VGS = −4.5 V "3.1 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature Pb-free Available

Contextual Info: Si1406DH Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.065 @ VGS = 4.5 V 3.9 D TrenchFETr Power MOSFETS D 1.8-V Rated D Thermally Enhanced SC-70 Package 20 0.075 @ VGS = 2.5 V 3.6 APPLICATIONS 0.096 @ VGS = 1.8 V

Contextual Info: Si5856DC Vishay Siliconix N-Channel 1.8-V G-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.040 @ VGS = 4.5 V 5.9 0.045 @ VGS = 2.5 V 5.6 0.052 @ VGS = 1.8 V 5.2 D D D D TrenchFETr Power MOSFETS Ultra Low rDS(on)

Si5853DC

Abstract: Si5856DC
Contextual Info: Si5856DC Vishay Siliconix N-Channel 1.8-V G-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.040 @ VGS = 4.5 V 5.9 0.045 @ VGS = 2.5 V 5.6 0.052 @ VGS = 1.8 V 5.2 D D D D TrenchFETr Power MOSFETS Ultra Low rDS(on)

TFC 718 S

Abstract: tfc 718 RQS series
Contextual Info: Data Sheet April 1997 mi cr oe l e c t r oni c s group Lucent Technologies Bell Labs Innovations T7121 HDLC Interface for ISDN HIFI-64 Features Description • Low-cost device for B-channel (64 kbits/s) or D-channel (16 kbits/s) data transport. The T7121 HDLC Interface for ISDN (HIFI-64) con­

Contextual Info: Si4925BDY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Advanced High Cell Density Process PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.025 @ VGS = −10 V −7.1 APPLICATIONS 0.041 @ VGS = −4.5 V −5.5 D Load Switches

Si4410BDY

Abstract: Si4410BDY-T1
Contextual Info: Si4410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V 10 0.020 @ VGS = 4.5 V 8 D TrenchFETr Power MOSFET D 100% Rg Tested APPLICATIONS Pb-free Available D Battery Switch D Load Switch

Contextual Info: SUM65N20-30 Vishay Siliconix N-Channel 200-V D-S 175_C MOSFET FEATURES D TrenchFETr Power MOSFET D 175_C Junction Temperature D New Low Thermal Resistance Package D 100% Rg Tested D RoHS Compliant PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) 200 ID (A) 0.030 @ VGS = 10 V

Si1406DH

Contextual Info: Si1406DH Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.065 @ VGS = 4.5 V 3.9 D TrenchFETr Power MOSFETS D 1.8-V Rated D Thermally Enhanced SC-70 Package 20 0.075 @ VGS = 2.5 V 3.6 APPLICATIONS 0.096 @ VGS = 1.8 V

Si1419DH

Abstract: 50368
Contextual Info: Si1419DH New Product Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −200 rDS(on) (W) ID (A) 5.0 @ VGS = −10 V −0.38 5.1 @ VGS = −6 V −0.37 D TrenchFETr Power MOSFETS D Small, Thermally Enhanced SC-70 Package D Ultra Low On-Resistance

SUM65N20-30

Abstract: S-50367
Contextual Info: SUM65N20-30 Vishay Siliconix N-Channel 200-V D-S 175_C MOSFET FEATURES D TrenchFETr Power MOSFET D 175_C Junction Temperature D New Low Thermal Resistance Package D 100% Rg Tested D RoHS Compliant PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) 200 ID (A) 0.030 @ VGS = 10 V

Contextual Info: Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Advanced High Cell Density Process PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.012 @ VGS = −10 V −11.4 APPLICATIONS 0.019 @ VGS = −4.5 V −9.1 D Load Switches

Contextual Info: Si1012R/X Vishay Siliconix N-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 20 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 D D D D D D SC-75A or SC-89 G S Pb-free Available BENEFITS D D D D D 1 3 TrenchFETr Power MOSFET: 1.8-V Rated