S3H 02 Search Results

56-PIN

Abstract: LH28F320S3H-L LH28F320S3-L S3HL
Contextual Info: LH28F320S3-L/S3H-L LH28F320S3-L/S3H-L 32 M-bit 4 MB x 8/2 MB x 16 Smart 3 Flash Memories (Fast Programming) DESCRIPTION A R Y • High performance read access time LH28F320S3-L11/S3H-L11 – 110 ns (3.3±0.3 V)/140 ns (2.7 to 3.6 V) LH28F320S3-L14/S3H-L14

56-PIN

Abstract: LH28F320S3H-L LH28F320S3-L
Contextual Info: LH28F320S3-L/S3H-L LH28F320S3-L/S3H-L 32 M-bit 4 MB x 8/2 MB x 16 Smart 3 Flash Memories (Fast Programming) DESCRIPTION A R Y • High performance read access time LH28F320S3-L11/S3H-L11 – 110 ns (3.3±0.3 V)/140 ns (2.7 to 3.6 V) LH28F320S3-L14/S3H-L14

gsm internet modem circuit

Abstract: S3H-L TSOP056-P-1420
Contextual Info: LH28F160S3-L/S3H-L LH28F160S3-L/S3H-L 16 M-bit 2 MB x 8/1 MB x 16 Smart 3 Flash Memories (Fast Programming) DESCRIPTION The LH28F16S3-L/S3H-L flash memories with Smart 3 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide

A17E

Abstract: 56-PIN LH28F320S3H-L LH28F320S3-L
Contextual Info: SHARP LH28F320S3-L/S3H-L LH28F320S3-L/S3H-L 32 M-bit 4 MB x 8/2 MB x 16 Smart 3 Flash Memories (Fast Programming) DESCRIPTION • High performance read access time The LH 28F320S 3-L/S3H -L flash m em ories with Sm art 3 technology are high-density, low-cost,

A18E

Abstract: 56-PIN LH28F320S3H-L LH28F320S3-L A17OI
Contextual Info: LH28F320S3-L/S3H-L PRELIMINARY SHARP LH28F320S3-L/S3H-L 32 M-bit 4 MB x 8/2 MB x 16 Smart 3 Flash Memories (Fast Programming) DESCRIPTION The LH28F320S3-L/S3H-L flash memories with Smart 3 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide

A18E

Abstract: gsm internet modem circuit TSOP056-P-1420
Contextual Info: SHARP LH28F160S3-L/S3H-L LH28F160S3-L/S3H-L 16 M-bit 2 MB x 8/1 MB x 16 Smart 3 Flash Memories (Fast Programming) DESCRIPTION The LH 28F16S3-L/S3H -L flash • High performance read access time m em ories with Sm art 3 technology are high-density, low-cost,

S3H-02

Abstract: S19C s3vc0 S2LA20 s3h 02 S1K20H S1K40 S6K20 S2K20H S2K40
Contextual Info: -71 S1K20H S1K40 S2K20 S2K20H S2K40 S2L20U S2L40 S2L40 S2L60 S2LA20 S2V20 S2V60 S3H-02 S3K40 S3L20U S3L40 S3L60 S3LA20 S3V20 S3V60 S6K20 S6K20H S6K20R S6K40 S6K40R S16L60 S19C S19D S19E S19G S19J S19L S20C S20D S20E S20G S20J S20L S20L60 S30L40 S3QL60 S51A

Contextual Info: 64 SurfaceMountLC Filters These space saving low and high pass filters are pre-tuned, tight tolerance modules which serve a wide variety of filtering requirements. They feature 3rd order Butterworth alignment, less than 0.3 dB insertion loss, and a compact, 1812size construction ideally suited for auto insertion

Contextual Info: 2 . Sch em atic: Max 1. M echanical D im ensions: < o m o t / <F 015 6 O —S3H V X YYWW o 1 00 m CO •sl- J Ò X o TRANSFORMER O in fa . CM o 3. E lectrical S p ecification s: 25°C PARALLEL SERIES OCL NO DC : 14.70uH±20% 58.81 uH±20% Isat: 3.46Adc

Contextual Info: 66 SurfaceMountLC Filters These space saving low and high pass filters are pre-tuned, tight tolerance modules which serve a wide variety of filtering requirements. They feature 3rd order Butterworth alignment, less than 0.3 dB insertion loss, and a compact, 1812size construction ideally suited for auto insertion

kam relay

Contextual Info: V iS D I N C . . E N G IN E E R IN G D A T A S H E E sT i , « ' ' / *' TEST PROCEDURE RELAY T Y PE :FC B '205-020fcM COMPXJTER'TART » > ¿ * 9 3 4 7 3 7 1 .M ^ b P r T S O CUSTOMER/SPECIFICATION: M & 2 > 5 3 & f2 - 0 0 6 REV NJ /A ~ TEST REQUIREMENTS COIL R E S.; 2 0 O H M S

4 pole circuit breaker ABB

Abstract: S3H-02
Contextual Info: Isomax Molded case circuit breakers S3 – S8 15 Is M oma CC x Bs S4 N 250 B W - 2 xxx Accessories added in alpha-numeric order 1 A = BA = BA3 = S_ = U_ = Auxiliary Switch Bell Alarm Bell Alarm (S6/S7 only) Shunt trip with voltage code Undervoltage release with voltage code

HD-20

Contextual Info: o A 3d l 30 1 133HS 31V0S 6¿¿00 01 a310ldlS3U on ONiMvya 3000 33V0 LV 3NiMVdo d^noisno 1H0I3M OLOOt-tLL 3ZIS 331 IdOHS _LNIdd_L003 065' 02-aH 3_LI1AId~l1AIV ‘SISOd Via 9Z0' ‘113HS HVJJ3kM INOdj/M ‘ONViy ‘NSOd SZ '£ 3ZIS ‘ASSV IdOd3 s o n xu jo e g

s3h 02

Abstract: A1t smd sot23 a1z LMV118 avnet LMP2011 LMP2012 LMP2014 LMV771 LMV772
Contextual Info: SIS! S&I-SJ & : A m plifiers Made Simple"1 Amplifiers Made Simple ^. <& S. 2 i e | 4r is-®} tH 4 A m plifiers M ade Sim ple^- °1 ^ M A] jSL. ZI&]^. Amplifier Made Sim ple0! -2}-<§^!‘ ig t S .& ^ « 8 a] ^ • 341 SP IC E • • •§'A1®11 n # oj o.^a] ^

152bh

Abstract: 8C125 fzlt
Contextual Info: TO SH IB A TLCS-870/X CMOS 8 t í y h T -f O P =1 > t° il - $ TLCS-870/X V V - X TLC S-870/X v V - X i ä , üftg, m y hv > 7 °^ >f ï n a y tf o. - 9 f t 0 M + 7° U V 7 A io X Xß r ♦ - 9 ^ u : IMS* 4 h :1 8 1 8 4 2 ^ • mWM 8 bit X 8 b i t , 16 bit X 8 b i t , 16 bit -h 8 bit

Contextual Info: T O SH IB A TLP561G TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRIAC TLP561G TRIAC DRIVER Unit in mm PROGRAMMABLE CONTROLLERS AC-OUTPUT MODULE 3 2 1 T l Tf IT SOLID STATE RELAY 3 TTJ—E The TOSHIBA TLP561G consists of a zero voltage crossing turn-on photo-triac optically coupled to a gallium arsenide infrared emitting

8010J

Abstract: 8010P
Contextual Info: holt; HI-8010 Series INTEGRATED CIRCUITS CMOS HIGH VOLTAGE DISPLAY DRIVER GENERAL DESCRIPTION The HI-8010 high voltage display driver is con­ structed of MOS P Channel and N Channel enhancement mode devices in a single monolithic structure. It is designed to drive high voltage liquid

Contextual Info: 3ü GEC P L E S S E Y j a n u a r y i 996 SEM ICO ND UCTO RS DS4278-2.1 TF913.C FAST SWITCHING THYRISTOR KEY PARAMETERS v DRM 2000V 1300A ^T RMS 17000A ^TSM 300V/|_ls dV/dt 500A/(is dl/dt 50jis APPLICATIONS • High Power Inverters And Choppers. ■ UPS.

Contextual Info: HYUNDAI H Y 534256A SEMICONDUCTOR S e rie s 256KX 4-bit CMOS DRAM DESCRIPTION The HY534256A is the new generation and fast dynam ic RAM organized 262,144 x 4-bit. The HY534256A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide w ide operating

GMM7321000AN

Contextual Info: _ ü _ LG Semicon. Co. LTD Description Features The GMM7321000ANS/SG is an 1M x 32 bits Dynamic RAM MODULE which is assembled 2 pieces of 1M x 16bit DRAMs in 42 pin SOJ package on single sides the printed circuit board with decoupling capacitors. The GMM7321000ANS/SG is

GMM7321000AN

Contextual Info: _ ü _ LG Semicon. Co. LTD Description Features The GMM7321000ANS/SG is an 1M x 32 bits Dynamic RAM MODULE which is assembled 2 pieces of 1M x 16bit DRAMs in 42 pin SOJ package on single sides the printed circuit board with decoupling capacitors. The GMM7321000ANS/SG is

Contextual Info: MITSUBISHI LS Is DRAM MODULE MH4M32BJ-6,-7/ MH4M32 NBJ-6, -7/ MH4M32SBJ-6,-7 FAST PAGE MODE 134217728-BIT (41943Û4-WORD BY 32-BIT) DYNAMIC RAM DESCRIPTION The MH4M32BJ/NBJ/SBJ is 4194304-word by 32-bit PIN CONFIGURATION (TOP VIEW) [Both side] dynamic RAM module. That module consists of thirty-two

tpc8118

Abstract: SVI 2004 A toshiba f5d tpc8026 tpc8109 oks2c toshiba f5b TPC8028 MARKING TPC8107 SOP8 MOSFET MARKING STP
Contextual Info: Power MOSFETs 低耐圧低Ronシリーズ 2007年 2月 Copyright 2007, Toshiba Corporation. 低Ron 低耐圧U-MOSの技術トレンド 30 2 Ron*A (mOhm*mm ) 25 20 15 10 Pch Nch 5 Pch IV Nch III Pch V Nch IV Pch VI Nch V or VI 2007年 2月 2 リチウムイオン電池保護回路用MOSFETトレンドマップ

Contextual Info: AMENDMENT a Am29240 EH, Am29245 "EH, and Am29243™EH Advanced Micro Devices Enhanced High-Performance RISC Microcontrollers_ This document amends the Am29240 ™, Am29245 ™, andAm29243 ™ High-Performance RISC Microcontroller Data