56-PIN
Abstract: LH28F320S3H-L LH28F320S3-L S3HL
Text: LH28F320S3-L/S3H-L LH28F320S3-L/S3H-L 32 M-bit 4 MB x 8/2 MB x 16 Smart 3 Flash Memories (Fast Programming) DESCRIPTION A R Y • High performance read access time LH28F320S3-L11/S3H-L11 – 110 ns (3.3±0.3 V)/140 ns (2.7 to 3.6 V) LH28F320S3-L14/S3H-L14
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LH28F320S3-L/S3H-L
LH28F320S3-L11/S3H-L11
LH28F320S3-L14/S3H-L14
56-PIN
LH28F320S3H-L
LH28F320S3-L
S3HL
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PDF
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56-PIN
Abstract: LH28F320S3H-L LH28F320S3-L
Text: LH28F320S3-L/S3H-L LH28F320S3-L/S3H-L 32 M-bit 4 MB x 8/2 MB x 16 Smart 3 Flash Memories (Fast Programming) DESCRIPTION A R Y • High performance read access time LH28F320S3-L11/S3H-L11 – 110 ns (3.3±0.3 V)/140 ns (2.7 to 3.6 V) LH28F320S3-L14/S3H-L14
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Original
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LH28F320S3-L/S3H-L
LH28F320S3-L11/S3H-L11
LH28F320S3-L14/S3H-L14
SSOP056-P-0600)
85MAX.
FBGA080/064-P-0818)
56-PIN
LH28F320S3H-L
LH28F320S3-L
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PDF
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gsm internet modem circuit
Abstract: S3H-L TSOP056-P-1420
Text: LH28F160S3-L/S3H-L LH28F160S3-L/S3H-L 16 M-bit 2 MB x 8/1 MB x 16 Smart 3 Flash Memories (Fast Programming) DESCRIPTION The LH28F16S3-L/S3H-L flash memories with Smart 3 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide
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Original
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LH28F160S3-L/S3H-L
LH28F16S3-L/S3H-L
FBGA064-P-0811)
SDIP064-P-0750)
gsm internet modem circuit
S3H-L
TSOP056-P-1420
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PDF
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A17E
Abstract: 56-PIN LH28F320S3H-L LH28F320S3-L
Text: SHARP LH28F320S3-L/S3H-L LH28F320S3-L/S3H-L 32 M-bit 4 MB x 8/2 MB x 16 Smart 3 Flash Memories (Fast Programming) DESCRIPTION • High performance read access time The LH 28F320S 3-L/S3H -L flash m em ories with Sm art 3 technology are high-density, low-cost,
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OCR Scan
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LH28F320S3-L/S3H-L
LH28F320S3-L/S3H-L
56-pin
P056-ff'
80-ball
LH28F320S3XX-L11
LH28F320S3XX-L14
SSOP056-P-0600)
FBGA080/064-P-0818)
A17E
LH28F320S3H-L
LH28F320S3-L
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PDF
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A18E
Abstract: 56-PIN LH28F320S3H-L LH28F320S3-L A17OI
Text: LH28F320S3-L/S3H-L PRELIMINARY SHARP LH28F320S3-L/S3H-L 32 M-bit 4 MB x 8/2 MB x 16 Smart 3 Flash Memories (Fast Programming) DESCRIPTION The LH28F320S3-L/S3H-L flash memories with Smart 3 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide
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OCR Scan
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F320S3-
LH28F320S3-L/S3H-L
LH28F320S3-L/S3H-L
H28F320S3XX-L11
LH28F320S3XX-L14
SSOP056-P-0600)
FBGA080/064-P-0818)
A18E
56-PIN
LH28F320S3H-L
LH28F320S3-L
A17OI
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PDF
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A18E
Abstract: gsm internet modem circuit TSOP056-P-1420
Text: SHARP LH28F160S3-L/S3H-L LH28F160S3-L/S3H-L 16 M-bit 2 MB x 8/1 MB x 16 Smart 3 Flash Memories (Fast Programming) DESCRIPTION The LH 28F16S3-L/S3H -L flash • High performance read access time m em ories with Sm art 3 technology are high-density, low-cost,
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OCR Scan
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LH28F160S3-L/S3H-L
LH28F16S3-L/S3H-L
thS3XX-L13
SSOP056-P-0600)
FBGA064-P-0811)
04TYP.
SDIP064-P-0750)
IL0-46
A18E
gsm internet modem circuit
TSOP056-P-1420
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PDF
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S3H-02
Abstract: S19C s3vc0 S2LA20 s3h 02 S1K20H S1K40 S6K20 S2K20H S2K40
Text: -71 S1K20H S1K40 S2K20 S2K20H S2K40 S2L20U S2L40 S2L40 S2L60 S2LA20 S2V20 S2V60 S3H-02 S3K40 S3L20U S3L40 S3L60 S3LA20 S3V20 S3V60 S6K20 S6K20H S6K20R S6K40 S6K40R S16L60 S19C S19D S19E S19G S19J S19L S20C S20D S20E S20G S20J S20L S20L60 S30L40 S3QL60 S51A
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OCR Scan
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S1K20H
100ns
S1K40
300ns
S2K20
S2K20H
S2K40
S3H-02
S19C
s3vc0
S2LA20
s3h 02
S1K40
S6K20
S2K20H
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PDF
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Untitled
Abstract: No abstract text available
Text: 64 SurfaceMountLC Filters These space saving low and high pass filters are pre-tuned, tight tolerance modules which serve a wide variety of filtering requirements. They feature 3rd order Butterworth alignment, less than 0.3 dB insertion loss, and a compact, 1812size construction ideally suited for auto insertion
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OCR Scan
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1812size
S3LP-606
HP8753D
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PDF
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Untitled
Abstract: No abstract text available
Text: 2 . Sch em atic: Max 1. M echanical D im ensions: < o m o t / <F 015 6 O —S3H V X YYWW o 1 00 m CO •sl- J Ò X o TRANSFORMER O in fa . CM o 3. E lectrical S p ecification s: 25°C PARALLEL SERIES OCL NO DC : 14.70uH±20% 58.81 uH±20% Isat: 3.46Adc
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OCR Scan
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XF0156
46Adc
500Vrms
73Adc
MIL-STD-202,
UL94V-0
E151556
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PDF
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Untitled
Abstract: No abstract text available
Text: 66 SurfaceMountLC Filters These space saving low and high pass filters are pre-tuned, tight tolerance modules which serve a wide variety of filtering requirements. They feature 3rd order Butterworth alignment, less than 0.3 dB insertion loss, and a compact, 1812size construction ideally suited for auto insertion
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OCR Scan
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1812size
HP8753D
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PDF
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kam relay
Abstract: No abstract text available
Text: V iS D I N C . . E N G IN E E R IN G D A T A S H E E sT i , « ' ' / *' TEST PROCEDURE RELAY T Y PE :FC B '205-020fcM COMPXJTER'TART » > ¿ * 9 3 4 7 3 7 1 .M ^ b P r T S O CUSTOMER/SPECIFICATION: M & 2 > 5 3 & f2 - 0 0 6 REV NJ /A ~ TEST REQUIREMENTS COIL R E S.; 2 0 O H M S
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OCR Scan
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205-020fcM
1463M
kam relay
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PDF
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4 pole circuit breaker ABB
Abstract: S3H-02
Text: Isomax Molded case circuit breakers S3 – S8 15 Is M oma CC x Bs S4 N 250 B W - 2 xxx Accessories added in alpha-numeric order 1 A = BA = BA3 = S_ = U_ = Auxiliary Switch Bell Alarm Bell Alarm (S6/S7 only) Shunt trip with voltage code Undervoltage release with voltage code
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14AWG
250kcmil
K4ET-250
480VAC
C0201
4 pole circuit breaker ABB
S3H-02
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PDF
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HD-20
Abstract: No abstract text available
Text: o A 3d l 30 1 133HS 31V0S 6¿¿00 01 a310ldlS3U on ONiMvya 3000 33V0 LV 3NiMVdo d^noisno 1H0I3M OLOOt-tLL 3ZIS 331 IdOHS _LNIdd_L003 065' 02-aH 3_LI1AId~l1AIV ‘SISOd Via 9Z0' ‘113HS HVJJ3kM INOdj/M ‘ONViy ‘NSOd SZ '£ 3ZIS ‘ASSV IdOd3 s o n xu jo e g
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OCR Scan
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HD-20
31MAR2000
HD-20
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PDF
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s3h 02
Abstract: A1t smd sot23 a1z LMV118 avnet LMP2011 LMP2012 LMP2014 LMV771 LMV772
Text: SIS! S&I-SJ & : A m plifiers Made Simple"1 Amplifiers Made Simple ^. <& S. 2 i e | 4r is-®} tH 4 A m plifiers M ade Sim ple^- °1 ^ M A] jSL. ZI&]^. Amplifier Made Sim ple0! -2}-<§^!‘ ig t S .& ^ « 8 a] ^ • 341 SP IC E • • •§'A1®11 n # oj o.^a] ^
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OCR Scan
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LMH6703
LMH6703-&
OT23-6)
LMH6703Ã
s3h 02
A1t smd
sot23 a1z
LMV118
avnet
LMP2011
LMP2012
LMP2014
LMV771
LMV772
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PDF
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152bh
Abstract: 8C125 fzlt
Text: TO SH IB A TLCS-870/X CMOS 8 t í y h T -f O P =1 > t° il - $ TLCS-870/X V V - X TLC S-870/X v V - X i ä , üftg, m y hv > 7 °^ >f ï n a y tf o. - 9 f t 0 M + 7° U V 7 A io X Xß r ♦ - 9 ^ u : IMS* 4 h :1 8 1 8 4 2 ^ • mWM 8 bit X 8 b i t , 16 bit X 8 b i t , 16 bit -h 8 bit
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OCR Scan
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TLCS-870/X
TLCS-870/X
TLCS-870/Xv
0043FH
0043FH
0013B
0013C
0013D
0013E
152bh
8C125
fzlt
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PDF
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TLP561G TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRIAC TLP561G TRIAC DRIVER Unit in mm PROGRAMMABLE CONTROLLERS AC-OUTPUT MODULE 3 2 1 T l Tf IT SOLID STATE RELAY 3 TTJ—E The TOSHIBA TLP561G consists of a zero voltage crossing turn-on photo-triac optically coupled to a gallium arsenide infrared emitting
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OCR Scan
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TLP561G
TLP561G
100mA
2500Vrms
E67349
2500Vac
11-7A9
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PDF
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8010J
Abstract: 8010P
Text: holt; HI-8010 Series INTEGRATED CIRCUITS CMOS HIGH VOLTAGE DISPLAY DRIVER GENERAL DESCRIPTION The HI-8010 high voltage display driver is con structed of MOS P Channel and N Channel enhancement mode devices in a single monolithic structure. It is designed to drive high voltage liquid
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OCR Scan
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HI-8010
40-PIN
48-PIN
52-PIN
52PQS
8010J
8010P
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PDF
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Untitled
Abstract: No abstract text available
Text: 3ü GEC P L E S S E Y j a n u a r y i 996 SEM ICO ND UCTO RS DS4278-2.1 TF913.C FAST SWITCHING THYRISTOR KEY PARAMETERS v DRM 2000V 1300A ^T RMS 17000A ^TSM 300V/|_ls dV/dt 500A/(is dl/dt 50jis APPLICATIONS • High Power Inverters And Choppers. ■ UPS.
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OCR Scan
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DS4278-2
TF913.
7000A
50jis
TF913
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PDF
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Untitled
Abstract: No abstract text available
Text: HYUNDAI H Y 534256A SEMICONDUCTOR S e rie s 256KX 4-bit CMOS DRAM DESCRIPTION The HY534256A is the new generation and fast dynam ic RAM organized 262,144 x 4-bit. The HY534256A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide w ide operating
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OCR Scan
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34256A
256KX
HY534256A
HV534256A
300mil
100BSC
300BSC
4b750Ã
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PDF
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GMM7321000AN
Abstract: No abstract text available
Text: _ ü _ LG Semicon. Co. LTD Description Features The GMM7321000ANS/SG is an 1M x 32 bits Dynamic RAM MODULE which is assembled 2 pieces of 1M x 16bit DRAMs in 42 pin SOJ package on single sides the printed circuit board with decoupling capacitors. The GMM7321000ANS/SG is
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OCR Scan
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GMM7321000ANS/SG
16bit
GMM7321000ANS/SG
GMM7321OOOANS
-GMM7321000ANSG
8888888m
D0Qb212
GMM7321000AN
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PDF
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GMM7321000AN
Abstract: No abstract text available
Text: _ ü _ LG Semicon. Co. LTD Description Features The GMM7321000ANS/SG is an 1M x 32 bits Dynamic RAM MODULE which is assembled 2 pieces of 1M x 16bit DRAMs in 42 pin SOJ package on single sides the printed circuit board with decoupling capacitors. The GMM7321000ANS/SG is
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OCR Scan
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GMM7321000ANS/SG
16bit
GMM7321000ANS/SG
GMM7321OOOANS
-GMM7321000ANSG
8888888m
GMM7321000AN
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LS Is DRAM MODULE MH4M32BJ-6,-7/ MH4M32 NBJ-6, -7/ MH4M32SBJ-6,-7 FAST PAGE MODE 134217728-BIT (41943Û4-WORD BY 32-BIT) DYNAMIC RAM DESCRIPTION The MH4M32BJ/NBJ/SBJ is 4194304-word by 32-bit PIN CONFIGURATION (TOP VIEW) [Both side] dynamic RAM module. That module consists of thirty-two
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OCR Scan
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MH4M32BJ-6
MH4M32
MH4M32SBJ-6
134217728-BIT
32-BIT)
MH4M32BJ/NBJ/SBJ
4194304-word
32-bit
MH4M32BJ-6
MH4M32NBJ-6
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PDF
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tpc8118
Abstract: SVI 2004 A toshiba f5d tpc8026 tpc8109 oks2c toshiba f5b TPC8028 MARKING TPC8107 SOP8 MOSFET MARKING STP
Text: Power MOSFETs 低耐圧低Ronシリーズ 2007年 2月 Copyright 2007, Toshiba Corporation. 低Ron 低耐圧U-MOSの技術トレンド 30 2 Ron*A (mOhm*mm ) 25 20 15 10 Pch Nch 5 Pch IV Nch III Pch V Nch IV Pch VI Nch V or VI 2007年 2月 2 リチウムイオン電池保護回路用MOSFETトレンドマップ
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Original
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TPCM8001-H
TPCM8003-H
TPCM8002-H
2Q/2007
TPCM8102
1Q/2007
tpc8118
SVI 2004 A
toshiba f5d
tpc8026
tpc8109
oks2c
toshiba f5b
TPC8028
MARKING TPC8107 SOP8
MOSFET MARKING STP
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PDF
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Untitled
Abstract: No abstract text available
Text: AMENDMENT a Am29240 EH, Am29245 "EH, and Am29243™EH Advanced Micro Devices Enhanced High-Performance RISC Microcontrollers_ This document amends the Am29240 ™, Am29245 ™, andAm29243 ™ High-Performance RISC Microcontroller Data
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OCR Scan
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Am29240
Am29245
Am29243
andAm29243
17787C)
Am29240EH
Am29245EH
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PDF
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