C502B
Abstract: clock ma 1042
Text: PL602-00 Multiplier XO IC Die for 12 to 25MHz Parallel Resonant Crystals FEATURES DIE CONFIGURATION • VDD VDD S0V S1V S2V Integrated crystal oscillator circuitry XO . Low phase noise (-125dBc @ 10kHz offset and 155.52MHz output) Selectable frequency multipliers (x1, x2, x4, x8
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PL602-00
25MHz
-125dBc
10kHz
52MHz
25MHz)
C502B
PL602-00
-12ves
C502B
clock ma 1042
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C502A
Abstract: P502-50DC PLL502-50 PLL502-50DC s2v25
Text: PLL502-50 VCXO IC Die for 20 to 52MHz Parallel Resonant Crystals DIE CONFIGURATION FEATURES • • • • • • XIN 27 XOUT 29 VCON 31 OE^ VDD VDD S0V S1V S2V Integrated voltage-controlled crystal oscillator circuitry VCXO (pull range 380ppm minimum).
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PLL502-50
52MHz
A0303-03J
380ppm
52MHz)
C502A
P502-50DC
PLL502-50
PLL502-50DC
s2v25
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clock ma 1042
Abstract: C502A P602-00DC PLL602-00DC A-0303
Text: PLL602-00 Multiplier XO IC Die for 12 to 25MHz Parallel Resonant Crystals FEATURES DIE CONFIGURATION • • • • VDD VDD S0V S1V S2V Integrated crystal oscillator circuitry XO . Low phase noise (-135dBc @ 10kHz offset) selectable frequency multipliers (x1, x2, x4, x8
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PLL602-00
25MHz
-135dBc
10kHz
25MHz)
A0303-03H
C502A
PLL602-00
clock ma 1042
C502A
P602-00DC
PLL602-00DC
A-0303
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clock ma 1042
Abstract: max 474 ic data X62M
Text: PL502-00 Multiplier VCXO IC Die for 12 to 25MHz Parallel Resonant Crys tals • XIN 27 XOUT 29 VDD S0V S1V S2V 65 mil VDD Integrated voltage-controlled crystal oscillator circuitry VCXO (pull range 500ppm minimum). Low phase noise (-125dBc @ 10kHz offset and
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PL502-00
25MHz
500ppm
-125dBc
10kHz
52MHz
25MHz)
C502B
PL502-00
clock ma 1042
max 474 ic data
X62M
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15d smd transistor
Abstract: C502A P502-50DC PLL502-50 PLL502-50DC A0303-03J
Text: VCXO IC Die for 20 to 52MHz Parallel Resonant Crystals • XIN 27 XOUT 29 VCON 31 S2V 23 S1V 25 S0V VDD 65 mil VDD Integrated voltage-controlled crystal oscillator circuitry VCXO (pull range 380ppm minimum). Selectable frequency dividers (x1, 1/2, 1/4, 1/8)
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52MHz
A0303-03J
380ppm
52MHz)
C502A
15d smd transistor
C502A
P502-50DC
PLL502-50
PLL502-50DC
A0303-03J
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XTAL 25MHz
Abstract: 25Mhz datasheet crystal 155.52MHZ XTAL 25MHZ Datasheet C502A P502-00DC PLL502-00 PLL502-00DC
Text: PLL502-00 Multiplier VCXO IC Die for 12 to 25MHz Parallel Resonant Crystals • • • • • VDD S0V S1V S2V • 65 mil VDD Integrated voltage-controlled crystal oscillator circuitry VCXO (pull range 500ppm minimum). Low phase noise (-130dBc @ 10kHz offset at
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PLL502-00
25MHz
500ppm
-130dBc
10kHz
44MHz
25MHz)
A0707-07A
XTAL 25MHz
25Mhz datasheet crystal
155.52MHZ
XTAL 25MHZ Datasheet
C502A
P502-00DC
PLL502-00
PLL502-00DC
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marking 2u
Abstract: marking code 10 sot23 S2V 3 BCW66 SMBTA64
Text: SMBTA64 PNP Silicon Darlington Transistors 3 • High collector current • High DC current gain 2 1 Type Marking SMBTA64 s2V Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter Symbol Collector-emitter voltage VCES 30 Collector-base voltage
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SMBTA64
VPS05161
marking 2u
marking code 10 sot23
S2V 3
BCW66
SMBTA64
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Q68000-A2485
Abstract: Q68000-A2625
Text: PNP Silicon Darlington Transistors SMBTA 63 SMBTA 64 High collector current ● High DC current gain ● Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBTA 63 SMBTA 64 s2U s2V Q68000-A2625 Q68000-A2485 B SOT-23 E C Maximum Ratings
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Q68000-A2625
Q68000-A2485
OT-23
Q68000-A2485
Q68000-A2625
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Untitled
Abstract: No abstract text available
Text: SMBTA63, SMBTA64 PNP Silicon Darlington Transistors 3 High collector current High DC current gain 2 1 Type Marking Pin Configuration SMBTA63 s2U 1=B 2=E 3=C SOT23 SMBTA64 s2V 1=B 2=E 3=C SOT23 VPS05161 Package Maximum Ratings Parameter Symbol Collector-emitter voltage
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SMBTA63,
SMBTA64
VPS05161
SMBTA63
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EHP00364
Abstract: No abstract text available
Text: SMBTA 63, SMBTA 64 PNP Silicon Darlington Transistors 3 • High collector current • High DC current gain 2 1 Type Marking Pin Configuration SMBTA 63 s2U 1=B 2=E 3=C SOT-23 SMBTA 64 s2V 1=B 2=E 3=C SOT-23 VPS05161 Package Maximum Ratings Parameter Symbol
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OT-23
VPS05161
EHP00364
EHP00215
EHP00415
EHP00365
Oct-14-1999
EHP00364
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PLG100-VH
Abstract: PLG150-DX Yamaha XG PLG100-XG PLG150-PF PLG150 PLG150-AN Yamaha PLG150-VL yamaha keyboard
Text: Introducing the y S80 Working with XGworks 3.0 Lite XGworks 3.0 Lite is a Windows sequencing program included on the S80 CDROM. It can house several different software plug-ins designed to act as Voice Editors for the Modular Synthesis Plug-in System. The
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PLG150-DX
PLG150-AN
PLG150-VL
PLG100-VH
PLG150-PF
PLG100-XG
PLG100-VH
PLG150-DX
Yamaha XG
PLG100-XG
PLG150-PF
PLG150
PLG150-AN
Yamaha
PLG150-VL
yamaha keyboard
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Untitled
Abstract: No abstract text available
Text: 2.1 Ω On Resistance, ±15 V/+12 V/±5 V iCMOS Dual SPST Switches ADG1421/ADG1422/ADG1423 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM 2.1 Ω on resistance 0.5 Ω maximum on resistance flatness Up to 250 mA continuous current Fully specified at +12 V, ±15 V, ±5 V
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ADG1421/ADG1422/ADG1423
10-lead
10-lead,
ADG1421
ADG1421
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Untitled
Abstract: No abstract text available
Text: 2.1 Ω On Resistance, ±15 V/+12 V/±5 V iCMOS Dual SPST Switches ADG1421/ADG1422/ADG1423 FEATURES FUNCTIONAL BLOCK DIAGRAM 2.1 Ω on resistance 0.5 Ω maximum on resistance flatness Up to 250 mA continuous current Fully specified at +12 V, ±15 V, ±5 V
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ADG1421/ADG1422/ADG1423
10-lead
10-lead,
ADG1421
ADG1421
ADG14l
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ADG1421BRMZ
Abstract: 08487 adg1421 ADG1422 10 lead analog devices b 11 S2V 80 ADG1423 ADG1433 S2V 3 10-Lead LFCSP footprint
Text: 2.1 Ω On Resistance, ±15 V/+12 V/±5 V iCMOS Dual SPST Switches ADG1421/ADG1422/ADG1423 FEATURES FUNCTIONAL BLOCK DIAGRAM 2.1 Ω on resistance 0.5 Ω maximum on resistance flatness Up to 250 mA continuous current Fully specified at +12 V, ±15 V, ±5 V No VL supply required
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ADG1421/ADG1422/ADG1423
10-lead
10-lead,
ADG1421
ADG1421
ADG1422
ADG1421BRMZ
08487
ADG1422
10 lead analog devices b 11
S2V 80
ADG1423
ADG1433
S2V 3
10-Lead LFCSP footprint
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marking code SOT23 SSi
Abstract: MARKING code SSi SOT23 code marking ssi sot-23 O ssi SOT-23
Text: SIEMENS PNP Silicon Darlington Transistors SMBTA 63 SMBTA 64 • High collector current • High DC current gain Type Marking Ordering Code tape and reel PinCïonfigui ation 1 2 3 Package1) SMBTA 63 SMBTA 64 s2U s2V Q68000-A2625 Q68000-A2485 B SOT-23 E C
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Q68000-A2625
Q68000-A2485
OT-23
P00853
marking code SOT23 SSi
MARKING code SSi SOT23
code marking ssi sot-23
O ssi SOT-23
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Untitled
Abstract: No abstract text available
Text: > I CD I O DIMENSIONS IN METRIC DO NOT SCALE DRAWING sMM DWG. NO. S D -5 9 2 3 3 -9 0 * * 2—I Ftf □ll|l m cu on © " V' h rfK S P ^ - > ^ sh” > v,r ;34+P 7;d 'H -P 7; S 5 S * y_, i ^ a s 4gc3-H-5S-S2V.' § S=SV 4 ¡1 - S S 2 I •■! i s I sDH-oJW-iiSii "0^3
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sick sensor
Abstract: No abstract text available
Text: Color Sensors, Operation Uses fo r co lo r sensors color sensors are becoming increa singly im portant in the automation o f processes and manufacturing lines in industry, particularly the processing industry. In practice, the possibilities fo r application are virtually unlimited.
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LD 7522
Abstract: ld 7523 SN7523N SN7524N SN7525N SN7522N
Text: FEATURES ABSOLUTE MAXIMUM RATINGS . • . • Differential Input Voltage VCC Strobe & Gain Input Voltages Storage Temperature Operating Temperature Power Dissipation DUAL SENSE AMPS ±4mV THRESHOLD UNCERTAINTY DESIGN VERSATILITY 25ns PROPAGATION DELAY ±5V
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500mW
SN7522N/
SN7523N
SN7524N/
SN7525N
300ns,
LD 7522
ld 7523
SN7524N
SN7522N
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M5255CP,FP,KP-55LL,-55XL, -70LL,-70XL 262144-BfT 32768-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION This M5M5255CP.FP.KP is a 262144-bit CMOS static RAMs organized as 32768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of
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M5M5255CP
KP-55LL
-55XL,
-70LL
-70XL
262144-BfT
32768-WORD
262144-bit
32768-words
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Untitled
Abstract: No abstract text available
Text: 35E D • A23b320 0Q172Ô4 2 « S I P PNP Silicon Darlington transistors SMBTA 63 SIEMENS/ SPCL, SEMICONDS SM BTA64 High collector current High DC current gain Type Marking Ordering code or versions in bulk Ordering code for versions on 8 mm-tape Package
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A23b320
0Q172Ã
BTA64
Q68000-A6419
Q68000-A6420
Q68000-A2625
Q68000-A2485
23b320
SMBTA64
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SN7525N
Abstract: SN7524N
Text: FEATURES ABSOLUTE MAXIMUM RATINGS • • • • Differential Input Voltage Vc c Strobe & Gain Input Voltages Storage Temperature Operating Temperature Power Dissipation DUAL SENSE AMPS =4mV THRESHOLD UNCERTAINTY DESIGN VERSATILITY 25ns PROPAGATION DELAY
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500mW
SN7520N/
SN7521N
SN7522N/
SN7523N
SN7524N/
SN7525N
300ns.
SN7525N
SN7524N
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE C16T03Q C16T04Q 17.7A/30— 40V SQUARE-PAK FEATURES ° Similar to TO-263AB Case, Surface Mount Device ° Dual Diodes - Cathode Common » Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability ° 30 Volts through 100 Volts Types Available
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C16T03Q
C16T04Q
O-263AB
C16T03Q
LL1S123
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M5M5255CP
Abstract: m5m5255cfp
Text: MITSUBISHI LSI* M5M5255CP, FP, KP-55LL,-55XL, -70LL.-70XL 262144-BIT 32768-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION This M5M5255CP,FP,KP is a 262144-bit CMOS static RAMS organized as 32768-words by B-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of
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M5M5255CP,
KP-55LL
-55XL,
-70LL
-70XL
262144-BIT
32768-WORD
M5M5255CP
262144-bit
32768-words
m5m5255cfp
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c3v2
Abstract: E526HN-100318 S3V 09 e526hna-100079 TOKO Inductance Test 10EZ TOKO 10EZ E526H E526HNA-100311 S2V 80 TOKO Inductance Test 10K
Text: 98 MC120 Î3TOKO Moktod Colls TYPE MC120 Space Wound: Inductance Range 0.04-0.21 jiH Close Wound: Inductance Range0.04-0.53|iH Frequency Range: 3 0 -1 5 0 M H z': Temperature Coefficient: I5 0 p p m /°C , max. 1 II t fj Unit: mm Features • Popular for low profile applications.
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MC120
10EZ/10K
TYPEMC120
c3v2
E526HN-100318
S3V 09
e526hna-100079
TOKO Inductance Test 10EZ
TOKO 10EZ
E526H
E526HNA-100311
S2V 80
TOKO Inductance Test 10K
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