S2P 100 Search Results

Contextual Info: p CENTRAL SEMICONDUCTOR 5<Tw£T»í:¿° gc?K?te^!íEeííi5ee@p e@s2p . CEN-A44 CEN-A45 CEN-A45A NPN SILICON TRANSISTOR ' H I G H VOLTAGE General § @ in ig © ii^ y g f@ r € rp » JEDEC TO-92 CASE EBC 145 Adams Avenue Hauppauge, New York 1 1 7 8 8

SP103C

Abstract: AC125V3A SP210L AC125V AC1500V M12X1 OMD8010006 SPL210 SPP-7 AC250V6A
Contextual Info: SP-SPL-SPP-S2P s M T 'M 5 í? 7 K '£ > 7 . 'f W m Miniature Pushbutton Switches • Jf¿=é<7>ü£B.Él/Part Numbering- • U L l ^ HDn H - 3 l ' T l i l 7 4 - < - v ? : C - # B a < t z £ SP 1 03 A • See page 174 for UL approved types.

C42V5964

Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION

how to calculate amplitude balance phase balance

Abstract: balun 0805 anaren 04 3000 58982-6-P1 2425B50-50 balun 75/150 datasheet SD22 MR59 58982-6-P23
Contextual Info: Measurement techniques for Baluns May 6, 2005 Measurements techniques for baluns A balun consists of an “unbalanced” port and two “balanced ports”. The balun is a passive and reversible device. Therefore the “unbalanced” port can be used as either an input or an output;

wk 2 94v-0

Abstract: wk 3 94v-0 wk 2 94v0
Contextual Info: SPECIFICATIONS Security Digital Card Connector WK Series Right Angle, SMT Push Push Type With Detect Switches 9 Pos. Mechanical Card Insertion Force: 40N max. Durability: 10000 Cycles Electrical Operating Voltage: 3.3V Operating Current: 100mA Contact Current Carrying Capacity : 500mA max.

transistor s2p

Abstract: meander resistor s2p AN1037 meander-line NE662M04 TL11 AN-1036
Contextual Info: California Eastern Laboratories APPLICATION NOTE AN1036 Effects of Parasitics in Circuit Simulations 1.0 Abstract 2.0 0.5 Including the proper parasitics in a nonlinear simulation can make the difference between an accurate prediction of circuit performance with minimal on-bench tuning and a design that

Contextual Info: -r Recommended P.C.B Layout Component Side 070008FB01 5 Q 0 3 3 4 R 1. Selective plating ’S1,—0 5 u ” Min. gold in c o n ta c t a r e a / 100 u” Min. Tin in solder area. ’S2P—Gold flash in c o n ta c t a r e a / 100 u” Min. Tin in solder area.

small signal GaAs FET

Abstract: gaAs FET s2p
Contextual Info: Preliminary MwT- 11 High Power, High Linearity GaAs FET Dec 2005 Chip Dimensions: 775 x 343 microns Chip Thickness: 100 microns Features: +30 dBm typical Output Power at 12 GHz 9 dB typical Small Signal Gain at 12 GHz 40% typical PAE at 12 GHz 0.3 x 2400 Micron Refractory Metal/Gold Gate

f541m43b

Abstract: 2N2040 transistor D210 transistor s2p WL30 ATF-54143 ATF541M4 ATF551M4 BCV62 TL34
Contextual Info: High Intercept Point Driver/Low Noise Amplifiers for 5.125–5.325 GHz and 5.725–5.825 GHz Applications using the Avago ATF-541M4 Enhancement Mode PHEMT Application Note 1350 Introduction Avago Technologies’ ATF-541M4 is a low noise high intercept point enhancement mode PHEMT designed

transistor s2p

Abstract: agilent pHEMT transistor LNA LOW NOISE AMPLIFIER lna 2.5 GHZ s parameter ads design Phycomp TL39 ATF-551M4 agilent pHEMT transistor TL381 ATF551M4 BCV62
Contextual Info: High Intercept Point Low Noise Amplifiers for 5.125 - 5.325 GHz and 5.725 - 5.825 GHz Applications using the Agilent ATF-551M4 Enhancement Mode PHEMT Application Note 1337 point of Vds = 2.7 V and Id of 15 mA, the 5.725 to 5.825 GHz ATF551M4 amplifier provides a

TL24

Abstract: Phycomp MGA-545P8 TL22 10D110 10D210 F293
Contextual Info: Medium Power Amplifier for 5.8 GHz Applications using the Avago MGA‑545P8 GaAs MMIC Application Note 1339 Introduction Amplifier Demo Board Avago Technologies’s MGA‑545P8 is an economical low current medium power GaAs MMIC that offers excellent power output at 5.8 GHz. At a quiescent bias point of Vds

TL381

Abstract: Phycomp 2n7040 ATF-551M4 f551m42o microstripline lna 2.5 GHZ s parameter ads design TL41 TL42 ATF551M4
Contextual Info: High Intercept Point Low Noise Amplifiers for 5.125- 5.325 GHz and 5.725- 5.825 GHz Applications using the ATF-551M4 Enhancement Mode PHEMT Application Note 1337 Introduction Avago Technologies’ ATF-551M4 is a low noise enhancement mode PHEMT designed for use in low

TRANSISTOR W25

Abstract: TL39 Phycomp TL42 TL34 ATF-54143 ATF-541M4 ATF-551M4 BCV62 w21 transistor
Contextual Info: High Intercept Point Driver/Low Noise Amplifiers for 5.125–5.325 GHz and 5.725– 5.825 GHz Applications using the Agilent ATF-541M4 Enhancement Mode PHEMT Application Note 1350 to its 400 micron equivalent, the ATF-551M4, the ATF-541M4 provides greater power output with

Phycomp

Abstract: MGA-545P8 TL11 TL22 F293
Contextual Info: Medium Power Amplifier for 5.8 GHz Applications using the Agilent MGA-545P8 GaAs MMIC Application Note 1339 Introduction Agilent Technologies’s MGA-545P8 is an economical low current medium power GaAs MMIC that offers excellent power output at 5.8 GHz. At a quiescent

Contextual Info: 15 GHz GaAs-FET Buffered Oscillator Application Note No. 010 A buffered stable oscillator has been developed using a parallel feedback circuit, two CFY 35 GaAs-field effect transistors and a dielectric resonator. In addition a spacer for a high resonator quality-factor is added. The design goals for this oscillator are high

transistor s2p

Abstract: design DRO TRANSISTOR C 2 SUB MA 2129 design dielectric resonator oscillator s2p 100 Dielectric Resonator Oscillator DRO CFY 18 CFY 10 CFY35
Contextual Info: 15 GHz GaAs-FET Buffered Oscillator Application Note No. 010 A buffered stable oscillator has been developed using a parallel feedback circuit, two CFY 35 GaAs-field effect transistors and a dielectric resonator. In addition a spacer for a high resonator quality-factor is added. The design goals for this oscillator are high

4937 N RO 35

Abstract: 777-787MHz s2p 100 10.7 MHZ s2p Hitachi DSA002700
Contextual Info: Apr.'10 TBE776 * Pb-free * Halogen and antimony-free 2mm Square Isolator P/N:HSMI-V2KB0782M01-T 1 (2) (3) (4) (5) (6) (7) (8) for for UMTS UMTS BAND BAND 13 13 Specification Tentative as of Apr '10 Frequency 777-787 MHz Insertion Loss_1* 0.53 dB max Insertion Loss_2

ltd 4601 g

Abstract: 10.7 MHZ s2p r707 hitachi metals Hitachi DSA002700 la 761
Contextual Info: Apr.'10 TBE775 * Pb-free * Halogen and antimony-free 2mm Square Isolator P/N:HSMI-V2KB0707M01-T 1 (2) (3) (4) (5) (6) (7) (8) for UMTS BAND 12&17 Specification Tentative as of Apr '10 Frequency 698-716 MHz Insertion Loss_1* 0.55 dB max Insertion Loss_2 0.65 dB max

LA 4303

Abstract: HSMI-V2KB0836M01-T hitachi metals Hitachi DSA002700
Contextual Info: Feb.'10 TBE664-1 * Pb-free * Halogen and antimony-free 2mm Square Isolator P/N:HSMI-V2KB0836M01-T 1 (2) (3) (4) (5) (6) (7) (8) for for UMTS UMTS BAND BAND 55 Specification Dimensions Frequency 824-849 MHz Insertion Loss_1* 0.53 dB max Insertion Loss_2 0.63 dB max

Contextual Info: MODEL 8 2 1/4" Diameter Single Turn Cermet Trimming Potentiometer ELECTRICAL • Standard Resistance Range, Ohms 10 to 1Meg Standard Resistance Tolerance ±10% <100 Ohms = ±20% Input Voltage, Maximum 200 Vdc or rms not to exceed power rating Slider Current, Maximum

DECT transmitter siemens

Abstract: pindiode switch L234N A03 SMD microwave transistor siemens BAR63 BAR63-03W BAR80 SIMID02 ms32 equivalent
Contextual Info: Application Note No. 007 Discrete & RF Semiconductors DECT 1.9 GHz Transmit - Receive PIN-Diode Switch DECT cordless telephones operate at frequencies between 1880 MHz and 1900 MHz. The TDMA system employed requires a non mechanical transmit-receive switch to connect the

LA 2785

Abstract: Hitachi DSA002700 R2535
Contextual Info: Aug.'10 TBE856 * Pb-free * Halogen and antimony-free 2mm Square Isolator P/N:HSMI-V2KA2535M01-T 1 Specification (2) (3) (4) Tentative Frequency as of Aug.’10 (5) (6) (7) (8) Dimensions (1) Series code (2) Size >> V2:2.0x2.0mm (3) Height >> K:1.0mm (4) Model code

xxww

Abstract: Chip Inductor CS Coilcraft
Contextual Info: Coilcraft S-Parameter Data for RF Surface Mount Inductors 1008LS Series Chip Inductors Version 1008LS August, 2012 Coilcraft, Inc. 2012 Coilcraft two-port S-parameter data files are based on empirical measurements of Coilcraft RF Surface Mount Inductors. The data files are used as "black box"

LA 4289

Abstract: Hitachi DSA002700
Contextual Info: Jan.'11 TBE786-1 * Pb-free * Halogen and antimony-free 2mm Square Isolator P/N:HSMI-V2KB0847M01-T 2 (3) (4) (5) (6) (7) (8) for BAND 20 Tentative as of Jan ‘11 Isolation 8 dB min VSWR_ In 1.5 max VSWR_ Out 1.6 max Attenuation 2f 8 dB min Attenuation 3f