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    Microchip Technology Inc MCP6S28-I-P

    IC OPAMP PGA 8 CIRCUIT 16DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MCP6S28-I-P Tube 194 1
    • 1 $3.47
    • 10 $3.47
    • 100 $3.47
    • 1000 $3.47
    • 10000 $3.47
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    Amphenol ProLabs C-Q28CJS28IN-P5M

    Cisco and Juniper Networks to In
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey C-Q28CJS28IN-P5M 1
    • 1 $437.5
    • 10 $437.5
    • 100 $415.625
    • 1000 $437.5
    • 10000 $437.5
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    Amphenol ProLabs C-S28CJS28IN-P5M

    Cisco and Juniper Networks to In
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey C-S28CJS28IN-P5M 1
    • 1 $168.75
    • 10 $168.75
    • 100 $160.3125
    • 1000 $168.75
    • 10000 $168.75
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    Amphenol ProLabs C-S28ARS28IN-P2M

    Arista Networks CAB-S-S-25G-2M t
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey C-S28ARS28IN-P2M 1
    • 1 $45
    • 10 $45
    • 100 $42.75
    • 1000 $45
    • 10000 $45
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    Amphenol ProLabs C-S28CIS28IN-P4M

    Cisco SFP-H25G-CU4M to Intel XXV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey C-S28CIS28IN-P4M 1
    • 1 $89.75
    • 10 $89.75
    • 100 $85.2625
    • 1000 $89.75
    • 10000 $89.75
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    S28I Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    da53

    Abstract: HY5R128HC745 HY5R128HC840 HY5R128HC845 HY5R144HC653 HY5R144HC745 HY5R144HC840 HY5R144HC845 HY5R144HM745 HY5R144HM845
    Text: Direct RDRAM 128/144Mbit 256Kx16/18x32s Preliminary Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and


    Original     		PDF 128/144Mbit 256Kx16/18x32s) 128/144-Mbit 600MHz 800MHz DL0059-00 da53 HY5R128HC745 HY5R128HC840 HY5R128HC845 HY5R144HC653 HY5R144HC745 HY5R144HC840 HY5R144HC845 HY5R144HM745 HY5R144HM845

    direct rdram rambus 1200

    Abstract: No abstract text available
    Text: 800/1066/1200 MHz RDRAM£ 256/288 Mb 512Kx16/18x32s Advance Information Overview The RDRAM£ device is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high


    Original     		PDF 600MHz DL-0118-07 direct rdram rambus 1200

    da53

    Abstract: DB26 0195c Outline T39
    Text: 1066 MHz RDRAMâ 256/288 Mb 512Kx16/18x32s Advance Information Overview • The Rambusâ DRAM (RDRAMâ) device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other


    Original     		PDF 512Kx16/18x32s) 600MHz DL-0118-010 da53 DB26 0195c Outline T39

    da53

    Abstract: DB26
    Text: 1066 MHz RDRAMâ 512/576 Mb 8Mx16/18x4i Advance Information Overview • The 1066 MHz Rambus DRAM (RDRAMâ) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any


    Original     		PDF 8Mx16/18x4i) DL0117-010 da53 DB26

    HYB25M144180C-653

    Abstract: HYB25R128160C-653 HYB25R128160C-745 HYB25R128160C-840 HYB25R128160C-845 HYB25R144180C-653 HYB25R144180C-745 HYB25R144180C-840 HYB25R144180C-845 Direct rdram
    Text: Direct RDRAM 128/144-MBit 256Kx16/18×32s Overview The Rambus Direct RDRAM is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.


    Original     		PDF 128/144-MBit 128/144-Mbit TEST77 TEST78 HYB25M144180C-653 HYB25R128160C-653 HYB25R128160C-745 HYB25R128160C-840 HYB25R128160C-845 HYB25R144180C-653 HYB25R144180C-745 HYB25R144180C-840 HYB25R144180C-845 Direct rdram

    diode t29

    Abstract: EDR2518ABSE EDR2518ABSE-8C-E T45 to DB9 EDR2518ABSE-8C EDR2518ABSE-AD EDR2518ABSE-AE EDR2518ABSE-AE-E EDR2518ABSE-AEP EDR2518ABSE-AEP-E
    Text: PRELIMINARY DATA SHEET 288M bits Direct Rambus  DRAM EDR2518ABSE 512K words x 18 bits × 32s banks Description Features The EDR2518AB (Direct RDRAM) is a general purpose high-performance memory device suitable for use in a broad range of applications including


    Original     		PDF EDR2518ABSE EDR2518AB EDR2518AB 1066MHz 288Mbits 800MHz 9375ns M01E0107 diode t29 EDR2518ABSE EDR2518ABSE-8C-E T45 to DB9 EDR2518ABSE-8C EDR2518ABSE-AD EDR2518ABSE-AE EDR2518ABSE-AE-E EDR2518ABSE-AEP EDR2518ABSE-AEP-E

    da53

    Abstract: DB26 BE1210 DB62 ROP10
    Text: RAMBUS Direct RDRAM Preliminary Information 256/288-Mbit 512Kx16/18x32s Overview The Rambus Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application


    Original     		PDF 256/288-Mbit 512Kx16/18x32s) 256/288-Mbit 600MHz 800MHz DL0060 DL0060 da53 DB26 BE1210 DB62 ROP10

    da53

    Abstract: DB26 DL010
    Text: RAMBUS Direct RDRAM Preliminary Information 256/288-Mbit 1Mx16/18x16d Overview The Rambus Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application


    Original     		PDF 256/288-Mbit 1Mx16/18x16d) 256/288-Mbit 600MHz 800MHz DL0105 DL0105 da53 DB26 DL010

    da48

    Abstract: uPD488448FB-C60-53-DQ1 uPD488448FF-C60-53-DQ1 uPD488448FF-C60-53-DQ2 uPD488448FF-C71-45-DQ1 uPD488448FF-C71-45-DQ2 uPD488448FF-C80-45-DQ1 uPD488448FF-C80-45-DQ2 DA63 DB33 circuit diagram
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD488448 for Rev. E 128 M-bit Direct Rambus DRAM EO Description The Direct Rambus DRAM Direct RDRAM is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high


    Original     		PDF PD488448 128M-bit da48 uPD488448FB-C60-53-DQ1 uPD488448FF-C60-53-DQ1 uPD488448FF-C60-53-DQ2 uPD488448FF-C71-45-DQ1 uPD488448FF-C71-45-DQ2 uPD488448FF-C80-45-DQ1 uPD488448FF-C80-45-DQ2 DA63 DB33 circuit diagram

    da53

    Abstract: DB26 KM416RD8AC KM418RD8AC
    Text: KM416RD8AC D /KM418RD8AC(D) Direct RDRAM 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Revision 1.01 October 1999 Page -2 Rev. 1.01 Oct. 1999 KM416RD8AC(D)/KM418RD8AC(D) Direct RDRAM™ Revision History Version 1.0 (July 1999) - Preliminary


    Original     		PDF KM416RD8AC /KM418RD8AC 128/144Mbit da53 DB26 KM418RD8AC

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD488448 for Rev. P 128 M-bit Direct Rambus DRAM Description The Direct Rambus DRAM Direct RDRAM is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where


    Original     		PDF PD488448 128M-bit

    Untitled

    Abstract: No abstract text available
    Text: 1066 MHz RDRAM£ 256/288 Mb 512Kx16/18x32s Advance Information Overview The RDRAM£ device is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high


    Original     		PDF 512Kx16/18x32s) 600MHz DL-0118-050

    Untitled

    Abstract: No abstract text available
    Text: KM416RD8AC D /KM418RD8AC(D) Preliminary Direct RDRAM 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Revision 1.0 July 1999 Page -2 Rev. 1.0 Jul. 1999 KM416RD8AC(D)/KM418RD8AC(D) Preliminary Direct RDRAM™ Revision History Version 1.0 (July 1999) - Preliminary


    Original     		PDF KM416RD8AC /KM418RD8AC 128/144Mbit

    745 B36 diode

    Abstract: micron sensor spd 357 RM01 MT8VR6416A
    Text: PRELIMINARY‡ 32, 64, 128 MEG x 16/18 RAMBUS RIMM MODULES RAMBUS RIMM MODULE MT4VR3216A, MT4VR3218A, MT8VR6416A, MT8VR6418A, MT16VR12816A, MT16VR12818A For the latest data sheet revisions, please refer to the Micron Web site: www.micronsemi.com/datasheets/modds.html


    Original     		PDF MT4VR3216A, MT4VR3218A, MT8VR6416A, MT8VR6418A, MT16VR12816A, MT16VR12818A 184-pin 128MB 256MB 745 B36 diode micron sensor spd 357 RM01 MT8VR6416A

    RDRAM Clock

    Abstract: No abstract text available
    Text: 1066 MHz RDRAM 256/288 Mb 4Mx16/18x4i Advance Information Overview The RDRAM device is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high


    Original     		PDF DL-0119-030 RDRAM Clock

    da53

    Abstract: DB26 DL0054 ycl dc 101
    Text: 1066 MHz RDRAMâ 256/288 Mb 4Mx16/18x4i Advance Information Overview • The Rambus DRAM (RDRAMâ) device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other


    Original     		PDF 4Mx16/18x4i) DL-0119-010 da53 DB26 DL0054 ycl dc 101

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 288M bits Direct Rambus DRAM µPD488588 512K words x 18 bits × 32s banks Description Features The Direct Rambus DRAM (Direct RDRAM) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any


    Original     		PDF PD488588 PD488588 288Mbits 600MHz 800MHz M01E0107

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Direct RDRAM K4R271669A for Short Channel 128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM Short Channel Revision 0.951 May 2000 Page -2 Rev. 0.951 May 2000 Preliminary Direct RDRAM™ K4R271669A for Short Channel Revision History


    Original     		PDF K4R271669A 128Mbit

    circuit of rowa television

    Abstract: toshiba b54
    Text: TOSHIBA TH M R2E2Z-6/-7/-8 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 18-BIT 64M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR2E2Z is a 33,554,432-word by 18-bit direct rambus dynamic RAM module consisting of 2 TC59RM818MB Direct Rambus DRAMs on a printed circuit board.


    OCR Scan     		PDF 432-WORD 18-BIT 18-bit TC59RM818MB B2M-wordX18 32M-wordX 600MHz 32M-word 711MHz circuit of rowa television toshiba b54

    Untitled

    Abstract: No abstract text available
    Text: THMR2N16-6/-7/-8 TOSHIBA TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 268,435,456-WORD BY 16-BIT 512M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR2N16 is a 268,435,456-word by 16-bit direct rambus dynamic RAM module consisting of 16 TC59RM816MB and Direct Rambus DRAMs on a printed circuit board.


    OCR Scan     		PDF THMR2N16-6/-7/-8 456-WORD 16-BIT THMR2N16 TC59RM816MB 256M-word 600MHz -16CSP

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TH M R2 E4Z-6/-7/-8 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 18-BIT 128M Bytes Direct Rambus D RAM MODULE DESCRIPTION The THMR2E4Z is a 67,108,864-word by 18-bit direct rambus dynamic RAM module consisting of 4 TC59RM818MB Direct Rambus DRAMs on a printed circuit board.


    OCR Scan     		PDF 108f864-WORD 18-BIT 864-word 18-bit TC59RM818MB 64M-word 64M-wordXl8 600MHz 711MHz

    TC59RM716GB

    Abstract: 9T20T
    Text: TOSHIBA TEN TA TIVE T O S H IB A M O S DIGITAL IN T E G R A T E D C IR C U IT TC59RM716GB-8 SILIC O N M O N O LIT H IC Overview T he D irect R am bus D R A M D irect R D R A M ™ is a general-purpose high perform ance m em ory device suitable for use in a broad ra n g e of applications including com puter memory, graphics, video a n d any o th er applications


    OCR Scan     		PDF TC59RM716GB-8 128-M 800-M TEST77 TEST78 P-BGA54-1312-1 TC59RM716GB 9T20T

    64H40

    Abstract: circuit of rowa television CM05
    Text: TOSHIBA TH M R2 N8Z-6/-7/-8 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 134,217,728-WORD BY 16-BIT 256M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR2N8Z is a 134,217,728-word by 16-bit direct rambus dynamic RAM module consisting of 8 TC59RM816MB Direct Rambus DRAMs on a printed circuit board.


    OCR Scan     		PDF 728-WORD 16-BIT 16-bit TC59RM816MB 128M-word 600MHz 128M-wordX16 711MHz 64H40 circuit of rowa television CM05

    DGA4

    Abstract: loqb 47KQ B23A B85A Toshiba Rambus IC
    Text: TOSHIBA THMR2N2Z-6/-7/-8 T O SH IBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 33,554,432-W ORD BY 16-BIT 64M Bytes Direct Rambus D R A M M O D U LE DESCRIPTION The THMR2N2Z is a 33,554,432-word by 16-bit direct rambus dynamic RAM module consisting of 2


    OCR Scan     		PDF 432-WORD 16-BIT 16-bit TC59RM816MB 32M-wordXl6 32M-word 600MHz 711MHz DGA4 loqb 47KQ B23A B85A Toshiba Rambus IC