S22A Search Results

Contextual Info: Multi-Contact Stecker MD/S22AR-N mit Arretierung und Gewindeanschluss Plugs MD/S22AR-N with snap-in lock and threaded stud Broches MD/S22AR-N avec verrouillage et embout filete Einbaudosen vom Typ MD/S22AR-N eignen sich als isolierte Stecker fur den Einbau in Gehause und Frontplatten. Dieser Stecker ist mit der Buchse

Contextual Info: S i n g l e p ol e, i n s u l a t e d , l o c k i n g - 22 m m dia. Plugs MD/S22AR-N with locking feature and threaded metric stud MD/S22AR-N Panel receptacles are insulated plugs designed for flush mounting in housings and panels. The plug is designed to mate with sockets KBT22AR-N/. The

Contextual Info: S in gl e pole, insulated, lo c k i n g - 10, 14 and 22 m m dia. Plugs / S ockets Single-pole, Insulated, Locking 10 mm, 14 mm, and 22 mm MD/B.AR-N, pg. 248 MD/S.AR-N, pg. 249 MD/B22AR.N, pg. 250 MD/S22AR-N, pg. 251 These 10,14 and 22 mm dia. unipolar connec­

SP 0323

Abstract: t994
Contextual Info: MI CR ON S E M I C O N D U C T O R INC bTE D H b l l l S M I G O Ü T i S S bflS M M R N AVAILABLE AUGUST 94 MICRON I S22A MEG SR A M DIE SEMICONDUCTOR INC. SRAM DIE 1 MEG SRAM 6 4 K X 1 8 and 3 2 K x 3 6 FEATURES • • • • • Single 3.3V +/-5% power supply

Contextual Info: AH420 4W High Linearity InGaP HBT Amplifier Product Features Functional Diagram Product Description • 400 – 2700 MHz The AH420 is a high dynamic range amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance with -49 dBc ACLR and +35.7

OS-PCN-2010-033-A

Abstract: LED OSRAM Power Topled LA E65F red LY E65F
Contextual Info: Power TOPLED With Lens Enhanced Thin Film LED Lead Pb Free Product - RoHS Compliant LS E65F, LA E65F, LY E65F Vorläufige Daten / Preliminary Data This data sheet is under PCN-revision (see separate data sheet with respect to OS-PCN-2010-033-A). Not to be used for design-in.

250VAC 16A T100/55

Abstract: T100/55 S18B s21b NTE Electronics 54-536 54-531 54-504 54-533 54519 S108
Contextual Info: Miniature Snap-In Nylon Rocker, Single Pole Features • S18 Fits Standard Panel Cutout .080 2.03 .812 (20.62) .375 (9.52) .187 (4.75) .725 (18.41) .375 (9.53) .470 (11.93) .890 (22.6) 1.070 (27.17) .620 (15.75) Terminal Types Momentary (54−058 ONLY) b: .250” Tab (Q.C.)

pseudomorphic HEMT

Abstract: TRANSISTOR c 5578 B TRANSISTOR BC 135 0604HQ FPD6836SOT343 OT343 3.5GHz BJT bc 548 transistor transistor bc 731 transistor bc 564
Contextual Info: FPD6836SOT343 FPD6836SOT3 43 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT343 Product Description The FPD6836SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25µmx750µm

FPD750SOT89

Abstract: BC 148 TRANSISTOR DATASHEET SSG 23 TRANSISTOR TRANSISTOR BC 135 FPD750SOT89E
Contextual Info: FPD750SOT89 FPD750SOT89 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky

0603 footprint IPC

Abstract: FPD3000 TRANSISTOR BC 157 FPD3000SOT89 FPD3000SOT89E
Contextual Info: FPD3000SOT89 FPD3000SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky

FPD1500

Abstract: SSG 23 TRANSISTOR stu 407 BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 FPD1500DFN FPD750SOT89 InGaAs hemt biasing EB1500DFN-BE
Contextual Info: FPD1500DFN FPD1500DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT Package: 2mmx2mm DFN Product Description Features The FPD1500DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a

Panasonic Selection Guide 2012

Contextual Info: ＳＵＲＦＡＣＥ ＭＯＵＮＴ ＲＥＳＩＳＴＯＲＳ ＴＥＣＨＮＩＣＡＬ ＧＵＩＤＥ Ver.3 Circuit Components Business Division Automotive & Industrial Systems Company Panasonic Corporation TECHNICAL GUIDE Ver.3 Contents 1. First:

OS-PCN-2010-033-A

Abstract: OS-IN-2009-035 LED OSRAM Power Topled LA E65F red GPLY6085
Contextual Info: Power TOPLED With Lens Enhanced Thin Film LED Lead Pb Free Product - RoHS Compliant LS E65F, LA E65F, LY E65F Vorläufige Daten / Preliminary Data This data sheet is under PCN-revision (see separate data sheet with respect to OS-PCN-2010-033-A). Not to be used for design-in.

s21b

Abstract: 315HZ s22b C47uF 74HC74 FB12 S17B CXA1898Q 74HC85 IC band pass TL072
Contextual Info: CXA1898Q Recording/Playback Equalizer Amplifier For the availability of this product, please contact the sales office. Description The CXA1898Q is an IC developed for analog signal processing in tape recorders. Processing for both the recording and playback systems is

Contextual Info: TA8851CN TO SH IBA TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT T• A U D IO /V ID E O Am »f S W IT C H IC t FO R f TV t R i W IT H r SILICON MONOLITHIC N■ « S -T E R M IN A L S The T A 8851 CN is an A / V SWITCH IC, which has 7 input channels and 2 output channels. Because the 2 output

s-parameter

Abstract: S11S22-S12S21 fa12 mark RF S-parameters RF transistors with s-parameters s-parameter s11 s12 s21 FA12 FB12 agilent ads cst microwave studio
Contextual Info: DesignCon 2006 Accurate Calibration and Measurement of Non-Insertable Fixtures in FPGA and ASIC Device Characterization Hong Shi, Altera Corporation [hshi@altera.com] Geping Liu, Altera Corporation Alan Liu, Altera Corporation CP-ACMFIX-1.0 Abstract S-parameter measurement on interfaces with non-insertable connections has been a

S465A

Abstract: FLM1314-18F ED-4701
Contextual Info: FLM1314-18F X,Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=42.5dBm Typ. ・High Gain: G1dB=6.0dB(Typ.) ・High PAE: ηadd=27%(Typ.) ・Broad Band: 13.75~14.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION

Contextual Info: FPM21500QFN FPM21500QF N Low-Noise High-Linearity Balanced Amplifier Module LOW-NOISE HIGH-LINEARITY BALANCED AMPLIFIER MODULE Package: 4mmx4mm QFN Product Description Features The FPM21500QFN is a packaged pair of transistors pHEMT specifically optimized for balanced configuration systems. Our 0.25µm process

s21b

Abstract: s29b 18752 74hc74 pin diagram ic 18752 s22b 74HC74 S58D 315HZ tl072 cp equivalent
Contextual Info: CXA1998BQ Recording/Playback Equalizer Amplifier Description The CXA1998BQ is an IC developed for analog signal processing in tape recorders. Processing for both the recording and playback systems is achieved on one chip. Features • 11-bit serial data interface

VD-1-54

Contextual Info: 17.0-21.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1009 May 2005 - Rev 05-May-05 Features Chip Device Layout Excellent Linear Output Amplifier Stage 20.0 dB Small Signal Gain +29.5 dBm P1dB Compression Point +38.0 dBm Third Order Intercept OIP3

Contextual Info: Low Noise GaAs MMIC Amplifier, 3.5 - 7.0 GHz Features • • • • • • • MAAM37000-A1 V4 Functional Schematic Low Noise Figure: 2.2 dB Typical High Gain: 17 dB Typical Gain Flatness: +0.5 dB Single Supply: +4 V No External Components Required DC Decoupled RF Input and Output

transistor marking code 1325

Abstract: R04003 ims pcb filtronic Solid State
Contextual Info: FPD1000AS Datasheet v2.4 1W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE 31 dBm Output Power P1dB @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency

ba 243 rf

Contextual Info: FMA3067SOT89E LOW NOISE HIGH LINEARITY PACKAGED MMIC PACKAGE: FEATURES • • • • • • API Datasheet v0.3 1.8 – 2.1 GHz 23 dBm P1dB @ 6V 16.5 dB Gain @ 1.9 GHz 38 dBm OIP3 @ 6V 3.2 dB Noise Figure @ 1.9GHz Single Supply +6V, 175mA GENERAL DESCRIPTION:

FPD200P70

Abstract: transistor marking code 1325 RO29 "IPC 1752" gold L130
Contextual Info: FPD200P70 Data sheet v4.0 HIGH FREQUENCY PACKAGED PHEMT FEATURES: • • • • • • PACKAGE 20 dBm Output Power P1dB 17 dB Gain at 5.8 GHz 0.7 dB Noise Figure at 5.8 GHz 30 dBm Output IP3 45% Power-Added Efficiency Useable Gain to 26 GHz RoHS 9 GENERAL DESCRIPTION: