S21C HF Search Results

OSC-0.3C

Abstract: S21c ASI10636
Contextual Info: OSC-0.3C NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .138 2L FLG DESCRIPTION: The ASI OSC-0.3C is Designed for General Purpose Oscillator Applications up to 7.5 GHz. A B FEATURES: • VCC = 12 V • Omnigold Metalization System C F E D MAXIMUM RATINGS

high frequency transistor

Abstract: S21C2
Contextual Info: OSC-0.3CP NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE .138 2L PILL DESCRIPTION: The OSC-0.3CP is a High Frequency Transistor designed for C Band Oscillator Applications. 0.095 0.105 0.023 0.027 FEATURES: • POUT = 320 mW Typ. at 7.5 GHz • Gold Metalization

ASI10636

Contextual Info: OSC-0.3C NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .138 2L FLG DESCRIPTION: A The ASI OSC-0.3C is Designed for B FEATURES: • • • Omnigold Metalization System C F E D MAXIMUM RATINGS IC 225 mA VCB 25 V O 5.0 W @ TC = 25 C PDISS TJ -65 OC to +200 OC

s21c

Contextual Info: SILICON NPN EPITAXIAL PLANAR T Y P E TRAN SISTO R \ 2 S Q 5 FOR VCO APPLICATION Q 7 U nit in mm 2 1±0 1 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Em itter-Base Voltage Collector C urrent Base C urrent Collector Power Dissipation

S21C HF

Abstract: s21c Z804
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR 2SC5110 U n it in mm FOR V C O A PPLIC A T IO N M A X IM U M R A T IN G S Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Em itter V oltage E m itter-B ase V oltage Collector C urrent Base C urrent

1623 FSJ

Contextual Info: 2 5 Q 4 3 2 4 S IL IC Q N N P N E P IT A X IA L P L A N A R T Y P E T R A N S IS T O R VHF —UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • U nit in mm Low Noise Figure, High Gain. NF = 1.8dB, |S2iel2= 9-5dB f=2GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

LV 1084

Contextual Info: SILICON NPN EPITAXIAL P LA N A R T Y P E T R A N SIST O R 2 § Q £ } Q Q Q V H F - U H F B A N D L O W N O IS E A M P L IF IE R A P P L IC A T IO N S . • U n it in mm Low N oise Figure, H igh G ain. N F = l .l d B , |S 2 i e í ¿ = 1 3 d B f= lG I Í z

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR ^ V H F - U H F B A N D L O W NOISE A M P LIF IE R A PP LIC A T IO N S . • U n it in mm + 0.5 2.5 - 0 3 Low Noise F igure, H igh G ain. + 0 25 1 5 - 0 .1 5 , N F = l.ld B , |S 2 lel2 = 1 3 d B f= lG H z M A X IM U M

d75p308

Abstract: display lcd 32x4 seg S19C AXOR CD 180 HC-18/U 4BNR-560B HC-43/U murata ws tv lg LCD AJPD75306
Contextual Info: NEC NEC Electronics Inc. ffPD 7530x/31x/P308/P316 4-B it M icrocom puters W ith LCD C ontroller/D river Description The juPD7530x/31x is a family of high-performance single-chip CMOS microcomputers containing CPU, ROM, RAM, I/O ports, several timer/counters, vectored