S21 OPTO Search Results

S21 OPTO Result Highlights (5)

Part	Manufacturer	Description
TLP3475W	Toshiba Electronic Devices & Storage Corporation	Photorelay (MOSFET output), 60 V/0.4 A, 300 Vrms, WSON4
TLP3406SRH4	Toshiba Electronic Devices & Storage Corporation	Photorelay (MOSFET output, 1-form-a), 30 V/0.9 A, 300 Vrms, S-VSON16T
TLP5702H	Toshiba Electronic Devices & Storage Corporation	Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L
TLP3407SRA	Toshiba Electronic Devices & Storage Corporation	Photorelay (MOSFET output, 1-form-a), 60 V/1 A, 500 Vrms, S-VSON4T
TLP3407SRH	Toshiba Electronic Devices & Storage Corporation	Photorelay (MOSFET output, 1-form-a), 60 V/1 A, 500 Vrms, S-VSON4T

S21 OPTO Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
nec reed relay Abstract: REED RELAYS 5 high speed solid state relay thyristor controlled dc digital drive theory Reed Relay Technical Applications Information NEC RELAY PS7801P NEC SOI Thyristor NEC PS7801 Text: High Current Circuit High Current Circuit A p p l i c at i o n N o t e AN 3008 Control Current Circuit Control Current Circuit NEC Solid State Relays for ATE Applications by Van N. Tran Staff Applications Engineer, CEL Opto Semiconductors Figure 2-1 Electro-Mechanical Relay	Original	Figure04 PS7804 PS7801J PS7801D PS7801C nec reed relay REED RELAYS 5 high speed solid state relay thyristor controlled dc digital drive theory Reed Relay Technical Applications Information NEC RELAY PS7801P NEC SOI Thyristor NEC PS7801	PDF
transistor s11 s12 s21 s22 Abstract: UPA802T 741 LEM hfe 4538 c 3420 transistor Transistor C 4927 transistor c 5299 transistor zo 607 NE681 transistor j50 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • UPA802T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz HIGH GAIN: \|S21E\|2 = 12 dB TYP at 1 GHz HIGH GAIN BANDWIDTH: fT = 7 GHz	Original	UPA802T NE681 UPA802T UPA802T-T1 24-Hour transistor s11 s12 s21 s22 741 LEM hfe 4538 c 3420 transistor Transistor C 4927 transistor c 5299 transistor zo 607 transistor j50	PDF
1S1111 Abstract: NEZ1414-2E 1S2116 Text: 2 W 14 GHz INTERNALLY NEZ1414-2E MATCHED POWER GaAs MESFET OUTLINE DIMENSIONS FEATURES • HIGH OUTPUT POWER: 2 W MIN PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 7.0 dB MIN 8.25 ± 0.15 • HIGH EFFICIENCY: 30% TYP • INDUSTRY STANDARD PACKAGING • INTERNALLY MATCHED FOR OPTIMUM	Original	NEZ1414-2E NEZ1414-2E 24-Hour 1S1111 1S2116	PDF
NEZ1414-4E Abstract: No abstract text available Text: 4 W 14 GHz INTERNALLY NEZ1414-4E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 36.5 dBm TYP PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 7.0 dB TYP • HIGH EFFICIENCY: 30% TYP 8.25 ± 0.15 • INDUSTRY STANDARD PACKAGING	Original	NEZ1414-4E NEZ1414-4E 24-Hour	PDF
UPA802T Abstract: a 3120 0537 741 LEM NE681 S21E UPA802T-T1 UPA802T-T1-A 22S21 transistor c 5299 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • UPA802T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz HIGH GAIN: \|S21E\|2 = 12 dB TYP at 1 GHz HIGH GAIN BANDWIDTH: fT = 7 GHz	Original	UPA802T NE681 UPA802T a 3120 0537 741 LEM S21E UPA802T-T1 UPA802T-T1-A 22S21 transistor c 5299	PDF
c 5929 transistor Abstract: transistor k 2541 Transistor C 4927 741 LEM UPA802T 2955 transistor lem 723 733 transistor c 5299 Text: SILICON TRANSISTOR UPA802T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz HIGH GAIN: \|S21E\|2 = 12 dB TYP at 1 GHz HIGH GAIN BANDWIDTH: fT = 7 GHz	Original	UPA802T NE681 UPA802T UPA802T-T1-A 24-Hour c 5929 transistor transistor k 2541 Transistor C 4927 741 LEM 2955 transistor lem 723 733 transistor c 5299	PDF
transistor j50 Abstract: c 5929 transistor 9418 transistor transistor 9747 transistor pt 6007 468-1 MAG NPN transistor 9418 156-06 NE686 S21E Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA807T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE686 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN: \|S21E\|2 = 9 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 13 GHz	Original	UPA807T NE686 UPA807T low12 24-Hour transistor j50 c 5929 transistor 9418 transistor transistor 9747 transistor pt 6007 468-1 MAG NPN transistor 9418 156-06 S21E	PDF
NEZ1414-8E Abstract: 39.5dB GaAs FET Text: 8 W 14 GHz INTERNALLY NEZ1414-8E MATCHED POWER GaAs MES FET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 39.5dB (MIN) PACKAGE OUTLINE T-61 • HIGH GAIN: 6.5 dB TYP • HIGH RELIABILITY GATE SIDE INDICATOR DEPRESSION 0.5 ± 0.1 • CLASS A OPERATION	Original	NEZ1414-8E NEZ1414-8E for11 24-Hour 39.5dB GaAs FET	PDF
AZ 2535 08 101 Abstract: transistor 9747 c 5929 transistor C 5478 transistor UPA807T 6292 transistor NE686 S21E UPA807T-T1 UPA807T-T1-A Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA807T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE686 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN: \|S21E\|2 = 9 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 13 GHz	Original	UPA807T NE686 UPA807T AZ 2535 08 101 transistor 9747 c 5929 transistor C 5478 transistor 6292 transistor S21E UPA807T-T1 UPA807T-T1-A	PDF
NEZ1414-3E Abstract: No abstract text available Text: 3 W 14 GHz INTERNALLY NEZ1414-3E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 34.5 dBm TYP PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 7.5 dB TYP • HIGH EFFICIENCY: 30% TYP 8.25 ± 0.15 • INDUSTRY STANDARD PACKAGING	Original	NEZ1414-3E NEZ1414-3E 24-Hour	PDF
16850 Abstract: No abstract text available Text: 2 W 14 GHz INTERNALLY NEZ1414-2E MATCHED POWER GaAs MESFET OUTLINE DIMENSIONS FEATURES • HIGH OUTPUT POWER: 2 W MIN PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 7.0 dB MIN 8.25 ± 0.15 • HIGH EFFICIENCY: 30% TYP • INDUSTRY STANDARD PACKAGING • INTERNALLY MATCHED FOR OPTIMUM	Original	NEZ1414-2E 24-Hour 16850	PDF
Untitled Abstract: No abstract text available Text: 4 W 14 GHz INTERNALLY NEZ1414-4E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 36.5 dBm TYP PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 7.0 dB TYP • HIGH EFFICIENCY: 30% TYP 8.25 ± 0.15 • INDUSTRY STANDARD PACKAGING	Original	NEZ1414-4E 24-Hour	PDF
NEZ1414-5E Abstract: No abstract text available Text: 5 W 14 GHz INTERNALLY NEZ1414-5E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 37.0 dBm TYP PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 7.0 dB TYP • HIGH EFFICIENCY: 30% TYP 8.25 ± 0.15 • INDUSTRY STANDARD PACKAGING	Original	NEZ1414-5E NEZ1414-5E 24-Hour	PDF
tc 2608 Abstract: No abstract text available Text: 3 W 14 GHz INTERNALLY NEZ1414-3E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 34.5 dBm TYP PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 7.5 dB TYP • HIGH EFFICIENCY: 30% TYP 8.25 ± 0.15 • INDUSTRY STANDARD PACKAGING	Original	NEZ1414-3E 24-Hour tc 2608	PDF

Untitled Abstract: No abstract text available Text: 5 W 14 GHz INTERNALLY NEZ1414-5E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 37.0 dBm TYP PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 7.0 dB TYP • HIGH EFFICIENCY: 30% TYP 8.25 ± 0.15 • INDUSTRY STANDARD PACKAGING	Original	NEZ1414-5E 24-Hour	PDF
Untitled Abstract: No abstract text available Text: NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 HIGH COLLECTOR CURRENT: 100 mA MAX NEW HIGH GAIN POWER MINI-MOLD PACKAGE SOT-89 TYPE HIGH OUTPUT POWER AT 1 dB COMPRESSION: 22 dBm TYP at 1 GHz	Original	OT-89 NE856M02 24-Hour	PDF
transistor s11 s12 s21 s22 Abstract: 2SC5336 NE856M02 NE856M02-T1 S21E NEC JAPAN 2415 0458 npn Text: NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 HIGH COLLECTOR CURRENT: 100 mA MAX NEW HIGH GAIN POWER MINI-MOLD PACKAGE SOT-89 TYPE HIGH OUTPUT POWER AT 1 dB COMPRESSION: 22 dBm TYP at 1 GHz	Original	OT-89 NE856M02 NE856M0in transistor s11 s12 s21 s22 2SC5336 NE856M02-T1 S21E NEC JAPAN 2415 0458 npn	PDF
Micro-X Marking 865 Abstract: Amplifier Micro-X Marking 865 ne02133 MARKING ic 18752 35 micro-X Package MARKING CODE F Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION	Original	NE021 NE02107 NE2100 NE02107/NE02107B NE02130-T1 NE02133-T1B NE02135 NE02139-T1 Micro-X Marking 865 Amplifier Micro-X Marking 865 ne02133 MARKING ic 18752 35 micro-X Package MARKING CODE F	PDF
transistor s11 s12 s21 s22 Abstract: NE856M02-T1-AZ NE856M02 Text: SILICON TRANSISTOR NE856M02 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 BOTTOM VIEW 4.5±0.1 1.6±0.2 C E B E 0.8 MIN DESCRIPTION The NE856M02 is an NPN silicon epitaxial bipolar transistor	Original	OT-89 NE856M02 NE856M02 transistor s11 s12 s21 s22 NE856M02-T1-AZ	PDF
NE67383 Abstract: NE67300 2SK407 NEC NE67300 MESFET 8S222 NE673 NEC NE67383 Text: LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY NE67300 NE67383 NE67383 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA FEATURES • VERY HIGH fMAX: 100 GHz 20 • LG = 0.3 µm, WG = 280 µm • N+ CONTACT LAYER Triple Epitaxial Technology	Original	NE67300 NE67383 NE673 24-Hour NE67383 NE67300 2SK407 NEC NE67300 MESFET 8S222 NEC NE67383	PDF
transistor 8331 Abstract: LD SOT 423 transistor marking v64 ghz kf 982 NE34018 NE34018-TI-64 Text: GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER New Plastic Package NE34018 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 20 mA FEATURES • LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) 25 4 Noise Figure, NF (dB) GA • HIGH ASSOCIATED GAIN:	Original	NE34018 OT-343) NE34018 amplifie05 transistor 8331 LD SOT 423 transistor marking v64 ghz kf 982 NE34018-TI-64	PDF
transistor 8730 Abstract: UPA800T NPN Transistor 8440 NE680 S21E UPA800T-T1 TRANSISTOR C 6090 npn mje 3007 BJT 5240 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA800T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz • HIGH GAIN: \|S21E\|2 = 7.5 dB TYP at 2 GHz • EXCELLENT LOW VOLTAGE, LOW CURRENT	Original	UPA800T NE680 UPA800T 24-Hour transistor 8730 NPN Transistor 8440 S21E UPA800T-T1 TRANSISTOR C 6090 npn mje 3007 BJT 5240	PDF
TLP 817 Abstract: moc 641 CNY 817 TLP 621 TOSHIBA NEC ps2401 TLP766J MOTOROLA moc cny 57 moc 410 optokoppler Text: Optokoppler Optocouplers Vergleichsliste Cross reference D iese Liste erhebt keinen A n sp ru ch auf V ollstän dig keit, im Einzelfall bitte die e n tsp re ch e n d e n D a te nb lätter ve rg le ich e n . (This list do es not cla im be in g com p le te , therefore,	OCR Scan	IL420 IL400 IL250 IL252 LTK-702 TLP 817 moc 641 CNY 817 TLP 621 TOSHIBA NEC ps2401 TLP766J MOTOROLA moc cny 57 moc 410 optokoppler	PDF
S2508 Abstract: No abstract text available Text: TOSHIBA de~Jich 725 G aooosii a ln {DISCRETE/OPTO} 9097250 T O SH IB A <D I S C R E T E /O P T O fi . 39C 00511 D O UHP~L o U H F ^ L Band Low Noie e Amplifier Applications o High Speed Switohing Applications". NF = 2.0 dB K f = 500 M H z) 8 , = 15 dB ( f = 500 MHz )	OCR Scan	S2508 S2508	PDF

S21 OPTO Search Results

S21 OPTO Result Highlights (5)

S21 OPTO Datasheets Context Search

nec reed relay

transistor s11 s12 s21 s22

1S1111

NEZ1414-4E

UPA802T

c 5929 transistor

transistor j50

NEZ1414-8E

AZ 2535 08 101

NEZ1414-3E

16850

Untitled

NEZ1414-5E

tc 2608

Untitled

Untitled

transistor s11 s12 s21 s22

Micro-X Marking 865

transistor s11 s12 s21 s22

NE67383

transistor 8331

transistor 8730

TLP 817

S2508