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    S1M TP Search Results

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    S1M TP Price and Stock

    Micro Commercial Components FS1M-TP

    DIODE GEN PURP 1KV 1A DO214AC
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    DigiKey FS1M-TP Reel 363,000 3,000
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    FS1M-TP Reel 3,000
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    Vyrian FS1M-TP 368,562
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    Micro Commercial Components US1M-TP

    DIODE GEN PURP 1KV 1A DO214AC
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    DigiKey US1M-TP Cut Tape 104,035 1
    • 1 $0.23
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    US1M-TP Digi-Reel 104,035 1
    • 1 $0.23
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    US1M-TP Reel 100,000 5,000
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    Mouser Electronics US1M-TP 26,221
    • 1 $0.24
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    • 100 $0.101
    • 1000 $0.083
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    Newark US1M-TP Cut Tape 14,750 5
    • 1 $0.384
    • 10 $0.241
    • 100 $0.154
    • 1000 $0.105
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    TME US1M-TP 5,130 5
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    New Advantage Corporation US1M-TP 2,410,000 1
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    Vyrian US1M-TP 1,036,919
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    RAMXEED MB85RS1MTPW-G-APEWE1

    IC FRAM 1MBIT SPI 40MHZ 8WLP
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    DigiKey MB85RS1MTPW-G-APEWE1 Cut Tape 3,933 1
    • 1 $5.7
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    • 100 $4.9048
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    MB85RS1MTPW-G-APEWE1 Reel 3,933 1,500
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    MB85RS1MTPW-G-APEWE1 Digi-Reel 3,933 1
    • 1 $5.7
    • 10 $5.306
    • 100 $4.9048
    • 1000 $4.62822
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    Symmetry Electronics MB85RS1MTPW-G-APEWE1 1 1
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    RAMXEED MB85RS1MTPN-G-AWEWE1

    IC FRAM 1MBIT SPI 40MHZ 8DFN
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    DigiKey MB85RS1MTPN-G-AWEWE1 Reel 1,500 1,500
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    MB85RS1MTPN-G-AWEWE1 Cut Tape 1
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    Symmetry Electronics MB85RS1MTPN-G-AWEWE1 1
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    RAMXEED MB85RS1MTPNF-G-JNERE1

    IC FRAM 1MBIT SPI 40MHZ 8SOP
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    DigiKey MB85RS1MTPNF-G-JNERE1 Reel 1,089 1,500
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    MB85RS1MTPNF-G-JNERE1 Cut Tape 137 1
    • 1 $6.73
    • 10 $6.255
    • 100 $5.7791
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    MB85RS1MTPNF-G-JNERE1 Digi-Reel
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    Symmetry Electronics MB85RS1MTPNF-G-JNERE1 1
    • 1 $3.93
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    S1M TP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    S1M-TP Micro Commercial Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE GEN PURP 1KV 1A DO214AA Original PDF

    S1M TP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: S1D-Q … S1M-Q S1D-Q … S1M-Q Surface Mount Silicon Rectifier Diodes AEC-Q101 Silizium-Gleichrichterdioden für die Oberflächenmontage (AEC-Q101) Version 2013-10-21 Nominal current – Nennstrom ± 0.2 2.2 ± 0.2 2.1 ± 0.2 5 0.15 Type Typ 4.5 1.5 ±0.1


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    AEC-Q101) DO-214AC UL94V-0 PDF

    s1M SOT-23

    Abstract: Q68000-A6475 Q68000-A6476
    Text: NPN Silicon Darlington Transistors SMBTA 13 SMBTA 14 High DC current gain ● High collector current ● Collector-emitter saturation voltage ● Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBTA 13 SMBTA 14 s1M s1N Q68000-A6475


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    Q68000-A6475 Q68000-A6476 OT-23 s1M SOT-23 Q68000-A6475 Q68000-A6476 PDF

    MMBTA13

    Abstract: MMBTA14 SMBTA13 SMBTA14 s1M MMBTA13
    Text: SMBTA13/ MMBTA13, SMBTA14/ MMBTA14 NPN Silicon Darlington Transistors 3  High DC current gain  High collector current  Low collector-emitter saturation voltage 2 1 Pin Configuration VPS05161 Type Marking Package SMBTA13/ MMBTA13 s1M 1=B 2=E 3=C SOT23 SMBTA14/ MMBTA14


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    SMBTA13/ MMBTA13, SMBTA14/ MMBTA14 VPS05161 MMBTA13 EHP00826 MMBTA13 MMBTA14 SMBTA13 SMBTA14 s1M MMBTA13 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMBTA13/ MMBTA13, SMBTA14/ MMBTA14 NPN Silicon Darlington Transistors 3  High DC current gain  High collector current  Low collector-emitter saturation voltage 2 1 Pin Configuration VPS05161 Type Marking Package SMBTA13/ MMBTA13 s1M 1=B 2=E 3=C SOT23 SMBTA14/ MMBTA14


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    SMBTA13/ MMBTA13, SMBTA14/ MMBTA14 VPS05161 MMBTA13 MMBTA14 PDF

    intel iPLDLV22V10

    Abstract: 29049
    Text: in te l AIOWAMKSB 0[M F (S1M A ¥0®M ÎPLDLV22V10-5 LOW VOLTAGE, ELECTRICALLY ERASABLE 10-MACRQCELL CMOS PLD Low Voltage, Low Current, High Speed Upgrade to BiCMOS/Bipolar 22V10 and CMOS Equivalents 10 Macrocells with Programmable I/O Architecture (Registered/


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    PLDLV22V10-5 10-MACRQCELL 28-Pin 22V10 iPLDLV22V10 28-Lead IPLDLV22V10-5 intel iPLDLV22V10 29049 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMBTA13/ MMBTA13, SMBTA14/ MMBTA14 NPN Silicon Darlington Transistors 3  High DC current gain  High collector current  Low collector-emitter saturation voltage 2 1 Pin Configuration VPS05161 Type Marking Package SMBTA13/ MMBTA13 s1M 1=B 2=E 3=C SOT23 SMBTA14/ MMBTA14


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    SMBTA13/ MMBTA13, SMBTA14/ MMBTA14 VPS05161 MMBTA13 MMBTA14 PDF

    darlington sot23 npn

    Abstract: S1M sot23 SMBTA13 SMBTA14
    Text: SMBTA13, SMBTA14 NPN Silicon Darlington Transistors 3  High DC current gain  High collector current  Low collector-emitter saturation voltage 2 1 Type Marking Pin Configuration SMBTA13 s1M 1=B 2=E 3=C SOT23 SMBTA14 s1N 1=B 2=E 3=C SOT23 VPS05161 Package


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    SMBTA13, SMBTA14 SMBTA13 VPS05161 EHP00826 EHP00827 EHP00828 EHP00829 Jul-12-2001 darlington sot23 npn S1M sot23 SMBTA13 SMBTA14 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMBTA13, SMBTA14 NPN Silicon Darlington Transistors 3  High DC current gain  High collector current  Low collector-emitter saturation voltage 2 1 Type Marking Pin Configuration SMBTA13 s1M 1=B 2=E 3=C SOT23 SMBTA14 s1N 1=B 2=E 3=C SOT23 VPS05161 Package


    Original
    SMBTA13, SMBTA14 VPS05161 SMBTA13 SMBTA14 EHP00826 EHP00827 EHP00828 EHP00829 Nov-30-2001 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMBTA 13, SMBTA 14 NPN Silicon Darlington Transistors 3  High DC current gain  High collector current  Low collector-emitter saturation voltage 2 1 Type Marking Pin Configuration SMBTA 13 s1M 1=B 2=E 3=C SOT-23 SMBTA 14 s1N 1=B 2=E 3=C SOT-23 VPS05161 Package


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    OT-23 VPS05161 EHP00826 EHP00827 EHP00828 EHP00829 Oct-14-1999 PDF

    c 2562

    Abstract: SN74ALS666 SN74ALS667 SN54ALS666
    Text: SN54ALS666, SN54ALS667. SN74ALS666. SN74ALS667 8-BIT D TYPE TRANSPARENT READ BACK LATCHES W IT H 3 STATE O UTPUTS D 2 8 5 5 , JUNE 1 9 8 4 - S1M 54ALS666 J T P AC KA G E SN74ALS666 . . D W OR N T PAC KAG E 3-S tate l/O-Type Read-Back Inputs Bus-Structured Pinout


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    SN54ALS666, SN54ALS667. SN74ALS666. SN74ALS667 D2855, ALS666 ALS667 300-mil c 2562 SN74ALS666 SN54ALS666 PDF

    Untitled

    Abstract: No abstract text available
    Text: Sensors Infrared light emitting diode, side-view mold type SIM-20ST The S1M-20ST is a GaAs infrared light em itting diode housed in clear plastic. Side em ission with a <f> 1.85 mm lens and a 950 nm spectrum suitable for silicon detectors m ake it an ideal light source for sensors. It is particularly suited


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    SIM-20ST SIM-20ST RPM-20PB. PDF

    Untitled

    Abstract: No abstract text available
    Text: DENSE-PAC MICROSYSTEMS 32 Megabit C M O S SRAM D P S1M X32M L/D PS1M X32M W PRELIMINARY DESCRIPTION: PIN-OUT DIAGRAM The D P S 1 M X 3 2 M L /D P S 1 M X 3 2 M W is a 1 M e g x 32 high density, high-speed Static Random Access M em ory SRAM module, intended


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    30A147-00 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components S1A THRU S1M   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • Lead Free Finish/Rohs Compliant Note1 ("P"Suffix designates Compliant. See ordering information)


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    DO-214AA PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components S1A THRU S1M   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • x 1 Amp Silicon Rectifier 50 to 1000 Volts For Surface Mount Applications


    Original
    DO-214AA PDF

    S1M a4

    Abstract: No abstract text available
    Text: a W M S1M 1-XD EX I/I/HITE M I C R O E L E C T R O N I C S IM x l SRAM MONOLITHIC ADVANCED* FEATURES • PIN CONFIGURATION TOP VIEW 32 3 VCC A11 C 2 31 D N C A I2 C 3 NCC 4 29 H as 28 D A7 A15C 7 26 D A 5 27 H A6 NCC 8 25 □ A4 A16C 9 A 1 7 C 10 24 H A 3


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    PDF

    Philips date CODE MARKING

    Abstract: SMD MARKING CODE S1 DO214AC SMD MARKING CODE s1k diode SMD MARKING CODE s1j S1J taiwan smd diode s1B MCD802 MARKING CODE S1M SMA Philips MARKING CODE smd Product type marking code 039
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D168 S1 series SMA controlled avalanche rectifiers Product specification 2000 Feb 14 Philips Semiconductors Product specification SMA controlled avalanche rectifiers S1 series FEATURES DESCRIPTION • Glass passivated


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    M3D168 DO-214AC OD124 Philips date CODE MARKING SMD MARKING CODE S1 DO214AC SMD MARKING CODE s1k diode SMD MARKING CODE s1j S1J taiwan smd diode s1B MCD802 MARKING CODE S1M SMA Philips MARKING CODE smd Product type marking code 039 PDF

    diode S1J

    Abstract: S1J taiwan S1m diode s1j diode s1m tp diode s1m sma diode s1g sma MCD801 DIODE S1M DO-214AC VS1M
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D168 S1 series SMA controlled avalanche rectifiers Product specification 2000 Feb 14 Philips Semiconductors Product specification SMA controlled avalanche rectifiers S1 series FEATURES DESCRIPTION • Glass passivated


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    M3D168 DO-214AC cathod40 603502/250/01/pp12 diode S1J S1J taiwan S1m diode s1j diode s1m tp diode s1m sma diode s1g sma MCD801 DIODE S1M DO-214AC VS1M PDF

    Untitled

    Abstract: No abstract text available
    Text: FS1MM SURFACE MOUNT GLASS PASSIVATED RECTIFIER REVERSE VOLTAGE – 1000 Volts FORWARD CURRENT – 1 Ampere FEATURES DO-222AA • Very low profile package – 0.80mm • High efficiency • Low forward voltage drop, low power loss • For use in low voltage, high frequency inverters,


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    DO-222AA 2002/95/EC PDF

    230v dc 8a rectifier diode

    Abstract: No abstract text available
    Text: Application Note 1884 ISL6731AEVAL1Z and ISL6731BEVAL1Z: Boost CCM PFC for 300W Universal Input Adaptors Introduction Design Specifications This application note describes the design and implementation of a 390V, 300W, Continuous Conduction Mode CCM Boost PFC converter using the ISL6731A,


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    ISL6731AEVAL1Z ISL6731BEVAL1Z: ISL6731A, ISL6731B. ISL6731B ISL6731A 124kHz) ISL6731B 64kHz) 230v dc 8a rectifier diode PDF

    Untitled

    Abstract: No abstract text available
    Text: FS1MM SURFACE MOUNT GLASS PASSIVATED RECTIFIER REVERSE VOLTAGE – 1000 Volts FORWARD CURRENT – 1 Ampere FEATURES DO-222AA • Very low profile package – 0.80mm • High efficiency • Low forward voltage drop, low power loss • For use in low voltage, high frequency inverters,


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    DO-222AA 2002/95/EC PDF

    SIC 330n

    Abstract: ISL6730 S1m diode
    Text: Application Note 1830 Author: Alan Yu ISL6730AEVAL1Z and ISL6730CEVAL1Z: Boost CCM PFC for 90W Universal Input Adaptors Introduction Design Specifications This application note describes the design and implementation of a 390V, 90W, Continuous Conduction Mode CCM Boost PFC


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    ISL6730AEVAL1Z ISL6730CEVAL1Z: ISL6730A, ISL6730C. ISL6730C ISL6730A ISL6730C FN8258) AN1830 SIC 330n ISL6730 S1m diode PDF

    IN5406 diode

    Abstract: B32672P4684K TDK common mode choke film diode s1m c7 diode in5406
    Text: Application Note 1876 Author: Alan Yu ISL6730BEVAL1Z and ISL6730DEVAL1Z: Boost CCM PFC for 300W Universal Input Adaptors Introduction Design Specifications This application note describes the design and implementation of a 390V, 300W, Continuous Conduction Mode CCM Boost


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    ISL6730BEVAL1Z ISL6730DEVAL1Z: ISL6730B, ISL6730D. ISL6730D ISL6730B ISL6730D FN8258) ERJ-8GEYJ205 IN5406 diode B32672P4684K TDK common mode choke film diode s1m c7 diode in5406 PDF

    Untitled

    Abstract: No abstract text available
    Text: M/HITE /MICROELECTRONICS 1M x32 SRAM 3.3V MODULE W S1M32V-XG3X ADVANCED* FEATURES • A c c e s s T im e s of 17, 20, 25ns ■ Low Pow er CM OS ■ 84 lead, 28mm CQFP, Packag e 511 ■ Built-in Decoupling Caps and M u ltip le Ground Pins fo r Low Noise Operation


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    S1M32V-XG3X WS1M32V-XG3X 512Kx32 PDF

    S1M A3

    Abstract: No abstract text available
    Text: WS1M8-XXX Hi-REUASIUTY PRODUCT 2x512Kx8 DUALITHIC SRAM FEATURES O rg a n iz e d as t w o b a n k s o f 5 1 2 K x 8 • A c c e s s T i m e s 17, 2 0, 2 5, 3 5, 4 5, 5 5 n s C o m m e r c ia l, I n d u s tr ia l a n d M i l i t a r y T e m p e r a t u r e R a nges


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    2x512Kx8 S1M A3 PDF