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    S186P Price and Stock

    PEI Genesis AIB6US18-6PC

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    JRH Electronics MS3456KS18-6P

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    JRH Electronics MS3456LS18-6P

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    JRH Electronics MS3450LS18-6P

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    JRH Electronics MS3456LS18-6PZ

    AE5 1C 1#4 PIN PLUG
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    S186P Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    S186P Vishay Intertechnology Silicon PIN Photodiode Original PDF
    S186P Vishay Telefunken Silicon PIN Photodiode Original PDF
    S186P Vishay Telefunken Photodiode, Module, 0.1uSec, 30nA Original PDF
    S186P Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    S186P Telefunken Electronic Photo Detectors / Phototransistors / Photo Pin Diodes Scan PDF

    S186P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: S186P Vishay Telefunken Silicon PIN Photodiode Description S186P is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters l p 900 nm .


    Original     		PDF S186P S186P D-74025 20-May-99

    S186P

    Abstract: No abstract text available
    Text: S186P Vishay Semiconductors Silicon PIN Photodiode Description S186P is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters l p 900 nm .


    Original     		PDF S186P S186P D-74025 20-May-99

    S186P

    Abstract: No abstract text available
    Text: S186P Vishay Semiconductors Silicon PIN Photodiode Description S186P is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters λ p ≥ 900 nm .


    Original     		PDF S186P S186P 08-Apr-05

    S186P

    Abstract: No abstract text available
    Text: S186P Vishay Semiconductors Silicon PIN Photodiode Description S186P is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters λ p ≥ 900 nm .


    Original     		PDF S186P S186P 2002/95/EC 2002/96/EC 08-Apr-05

    S186P

    Abstract: 820nM
    Text: S186P Silicon PIN Photodiode Description S186P is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters l p 900 nm . The large active area combined with a flat case gives a


    Original     		PDF S186P S186P D-74025 15-Jul-96 820nM

    S186P

    Abstract: 8409 diode
    Text: TELEFUNKEN Semiconductors S 186 P Silicon PIN Photodiode Description S186P is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters


    Original     		PDF S186P D-74025 8409 diode

    S186P

    Abstract: No abstract text available
    Text: S186P Vishay Semiconductors Silicon PIN Photodiode Description S186P is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters λ p ≥ 900 nm .


    Original     		PDF S186P S186P 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: S186P Vishay Telefunken Silicon PIN Photodiode Description S186P is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters l p 900 nm .


    Original     		PDF S186P S186P D-74025 20-May-99

    S186P

    Abstract: No abstract text available
    Text: S186P Vishay Telefunken Silicon PIN Photodiode Description S186P is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters l p 900 nm .


    Original     		PDF S186P S186P D-74025 20-May-99

    S186P

    Abstract: No abstract text available
    Text: S186P Vishay Telefunken Silicon PIN Photodiode Description S186P is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters l p 900 nm .


    Original     		PDF S186P S186P D-74025 20-May-99

    S186P

    Abstract: No abstract text available
    Text: S186P Vishay Semiconductors Silicon PIN Photodiode Description S186P is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters λ p ≥ 900 nm .


    Original     		PDF S186P S186P 2002/95/EC 2002/96/ECs D-74025 08-Mar-05

    near IR sensors with daylight filter

    Abstract: light sensing circuit project BPW34 application note BPW20RF
    Text: TEKT5400S www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: side view lens • Dimensions L x W x H in mm : 5 x 2.65 x 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm


    Original     		PDF TEKT5400S TSKS5400S 2002/95/EC 2002/96/EC TEKT5400S 2002/95/EC. 2011/65/EU. JS709A near IR sensors with daylight filter light sensing circuit project BPW34 application note BPW20RF

    BPW34 application note

    Abstract: No abstract text available
    Text: VSMS3700 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 60°


    Original     		PDF VSMS3700 VEMT3700 J-STD-020 VSMS3700 AEC-Q101 2002/95/EC 2002/95/EC. 2011/65/EU. JS709A BPW34 application note

    BPW20RF

    Abstract: BPW34 osram phototransistor application lux meter BPW41 BPW34 application note BPW20RF application BPW41N IR DATA wi41g
    Text: BPV11 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation


    Original     		PDF BPV11 2002/95/EC 2002/96/EC BPV11 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12 BPW20RF BPW34 osram phototransistor application lux meter BPW41 BPW34 application note BPW20RF application BPW41N IR DATA wi41g

    BPW46

    Abstract: BPW34 osram
    Text: VSLB3940 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: T-1, clear epoxy • Dimensions: Ø 3 mm • Peak wavelength: p = 940 nm • High speed • High radiant power


    Original     		PDF VSLB3940 2002/95/EC 2002/96/EC VSLB3940 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12 BPW46 BPW34 osram

    tept5600 response time

    Abstract: Application NOTES TSAL4400 BPV11F Photo interrupter application notes SMD Transistor 1020 "Photo Interrupter" dual transistor CNY70 cny70 datasheet TEMT6000 TCND5000
    Text: w w w. v i s h a y. c o m Selector Guide Infrared Emitters, Photo Detectors and optical sensors Op t o e l e c t r o n i cs V I S HAY INTERTE C HNOLO G Y , IN C . infrared emitters, Photo Detectors, and Optical Sensors introduction as one of the world’s leading suppliers of infrared emitters, photo detectors, and optical sensors, Vishay offers an extraordinarily


    Original     		PDF emit4-9337-2920 VSA-SG0041-0512 tept5600 response time Application NOTES TSAL4400 BPV11F Photo interrupter application notes SMD Transistor 1020 "Photo Interrupter" dual transistor CNY70 cny70 datasheet TEMT6000 TCND5000

    Leader 8020 schematics Oscilloscope

    Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
    Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book infrared emitters and detectors vishay semiconductors vse-db0103-0810 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original     		PDF vse-db0103-0810 Leader 8020 schematics Oscilloscope smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s

    BPW34 application note

    Abstract: photodiode application luxmeter APPLICATION NOTE BpW34 BPW34 osram BPW20RF BPW21R osram phototransistor application lux meter BPW41N luxmeter detector BPW21R
    Text: VISHAY Vishay Semiconductors Measurement Techniques Introduction Characteristics of optoelectronics devices given in data sheets are verified either by 100 % production tests followed by statistic evaluation or by sample tests on typical specimens. These tests can be


    Original     		PDF 14-Apr-04 BPW34 application note photodiode application luxmeter APPLICATION NOTE BpW34 BPW34 osram BPW20RF BPW21R osram phototransistor application lux meter BPW41N luxmeter detector BPW21R

    BPW41 circuit application

    Abstract: OSRAM IR emitter
    Text: VSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 850 nm • High reliability


    Original     		PDF VSMG3700 J-STD-020 AEC-Q101 2002/95/EC 2002/96/EC VSMG3700 2002/95/EC. 2011/65/EU. JS709A BPW41 circuit application OSRAM IR emitter

    BPW34 application note

    Abstract: APPLICATION NOTE BpW34 BPW41 remote control
    Text: VSMF3710 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 890 nm • High reliability


    Original     		PDF VSMF3710 VSMF3710 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 BPW34 application note APPLICATION NOTE BpW34 BPW41 remote control

    IR LED 790 nm

    Abstract: IR LED 800 nm BPV23NF TSMS1000 PH 40 E BPW34 application S186P 11 NM 65 N TSAL7600 BPV10NF
    Text: VISHAY VISHAY INTERTECHNOLOGY, INC. Vishay Semiconductors PIN PHOTODIODES and FILTER OPTIONS A Device B Package C Photo Sensitive Area / mm2 D E F ±Ê Ira / ÌA G Recommended IR Emitters PIN Photodiodes without Filter - General Application BPV10 A 0.78 20°


    Original     		PDF BPV10 BPW34 BPW46 TEMD5000 TSHF5200 BPV22NF TSHF5400 BPV23NF TSFF5200 VHN-SG2401-0110 IR LED 790 nm IR LED 800 nm BPV23NF TSMS1000 PH 40 E BPW34 application S186P 11 NM 65 N TSAL7600 BPV10NF

    OSRAM IR emitter

    Abstract: BPW34 application note solar cell transistor infrared lux meter calibration application luxmeter
    Text: VSMG2700 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 830 nm • High reliability


    Original     		PDF VSMG2700 J-STD-020 AEC-Q101 2002/95/EC 2002/96/EC 2002/95/EC. 2011/65/EU. JS709A OSRAM IR emitter BPW34 application note solar cell transistor infrared lux meter calibration application luxmeter

    S186P

    Abstract: No abstract text available
    Text: T em ic S186P S e m i i' o n d u f t îi r s Silicon PIN Photodiode Description S 186 P is a h ig h sp ee d a n d h ig h se n sitiv e P IN p h o to d io d e in a flat sid e v ie w p la stic p a ck a g e . T h e e p o x y p a ck a g e it­ s e lf is an IR filter, sp e c tra lly m a tc h e d to G a A s o r G a A s


    OCR Scan     		PDF S186P 4S415 15-Jul-96 S186P

    BPW 64 photo

    Abstract: BPW 64 photo diode 77NB D5100 77nA BPW 56 photo bpx43-5 smd BPW 64 BPW 61 bpw 77na
    Text: VISHAY Vishay Telefunken Selector Guide Detectors Photo Transistors C haracteristics Dim. Package Fig- Type Photo Sensitive Area / mm 2 lca / m A @ Ee /m W /c m 2 + /- q¡ V c e = 5 V, X = 950 nm 1 tr / (j.s @ (lc = 5 mA, X = RL /k Q 950 nm) Photo Transistors in Clear Plastic Package


    OCR Scan     		PDF BPW16N BPW17N BPW85C BPW96C BPV11 BPV23FL TESS5400 900nm) BPW 64 photo BPW 64 photo diode 77NB D5100 77nA BPW 56 photo bpx43-5 smd BPW 64 BPW 61 bpw 77na