sd 431 transistor
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4058 SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The 2SK4058 is N-channel MOSFET device that features a PART NUMBER low on-state resistance and excellent switching characteristics, 2SK4058-S15-AY
|
Original
|
2SK4058
2SK4058
2SK4058-S15-AY
O-251
O-252
2SK4058-ZK-E1-AY
2SK4058-ZK-E2-AY
O-251)
sd 431 transistor
|
PDF
|
2SK4069
Abstract: mp3zk
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4069 SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The 2SK4069 is N-channel MOS FET device that features a PART NUMBER low on-state resistance and excellent switching characteristics, 2SK4069-S15-AY
|
Original
|
2SK4069
2SK4069
2SK4069-S15-AY
O-251
O-252
2SK4069-ZK-E1-AY
2SK4069-ZK-E2-AY
O-251)
mp3zk
|
PDF
|
2SK4069
Abstract: mp3zk
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4069 SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The 2SK4069 is N-channel MOS FET device that features a PART NUMBER low on-state resistance and excellent switching characteristics, 2SK4069-S15-AY
|
Original
|
2SK4069
2SK4069
2SK4069-S15-AY
O-251
O-252
2SK4069-ZK-E1-AY
2SK4069-ZK-E2-AY
O-251)
mp3zk
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113B SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a PART NUMBER low gate charge and excellent switching characteristics, and 2SK3113B-S15-AY
|
Original
|
2SK3113B
2SK3113B
2SK3113B-S15-AY
O-251
O-252
2SK3113B-ZK-E1-AY
O-251)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113B SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a PART NUMBER low gate charge and excellent switching characteristics, and 2SK3113B-S15-AY
|
Original
|
2SK3113B
2SK3113B
2SK3113B-S15-AY
O-251
O-252
2SK3113B-ZK-E1-AY
O-251)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HD-LI N X G S15 0 8 HDTV Cable Driver GENNUM A T I N PRELIMINARY DATA SHEET FEATURES DESCRIPTION • SMPTE 292M Compliant The GS1508 is a first generation very high speed bipolar integrated circuit designed to drive two 75 Q co-axial cables. The GS1508 is a SMPTE 292M com pliant cable
|
OCR Scan
|
GS1508
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Technical Specification IQ64xxxQGXxx 1.8-48V 50W 3000Vdc Quarter-brick Continuous Input Outputs Max Power REINFORCED Insulation DC-DC Converter a pu d bl va ic n at ce io d n 18-135V O UT 18 64 -1 0 35 33 V QG IN 3. C1 3V 5 N R @ S15 G A The InQor quarter-brick converter series is composed
|
Original
|
IQ64xxxQGXxx
3000Vdc
8-135V
|
PDF
|
I2063
Abstract: 150a gto ka s15 DO-205AC
Text: Bulletin I2063 rev. A 09/94 SD153N/R SERIES FAST RECOVERY DIODES Stud Version Features High power FAST recovery diode series 150A 1.0 to 1.5 µs recovery time High voltage ratings up to 1600V High current capability Optimized turn on and turn off characteristics
|
Original
|
I2063
SD153N/R
DO-30
SD153N/R
SD153N/R.
150a gto
ka s15
DO-205AC
|
PDF
|
irf 4710
Abstract: DO-205AB
Text: Bulletin I2065 rev. A 09/94 SD253N/R SERIES FAST RECOVERY DIODES Stud Version Features High power FAST recovery diode series 250A 1.5 to 2.0 µs recovery time High voltage ratings up to 1600V High current capability Optimized turn on and turn off characteristics
|
Original
|
I2065
SD253N/R
DO-205AB
SD253N/R
SD253N/R.
irf 4710
DO-205AB
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Bulletin I2065 rev. B 10/06 SD253N/R SERIES FAST RECOVERY DIODES Stud Version Features High power FAST recovery diode series 1.5 to 2.0 µs recovery time High voltage ratings up to 1600V 250A High current capability Optimized turn on and turn off characteristics
|
Original
|
I2065
SD253N/R
DO-205AB
SD253N/R
000V/
D253N/
|
PDF
|
DO-205AB
Abstract: S10 diode
Text: Bulletin I2064 rev. A 09/94 SD203N/R SERIES FAST RECOVERY DIODES Stud Version Features High power FAST recovery diode series 200A 1.0 to 2.0 µs recovery time High voltage ratings up to 2500V High current capability Optimized turn on and turn off characteristics
|
Original
|
I2064
SD203N/R
DO-205AB
SD203N/R
SD203N/R.
DO-205AB
S10 diode
|
PDF
|
I2062
Abstract: DO-205AC SD103 041E3 B-1296 20-UNF
Text: Bulletin I2062 rev. B 12/96 SD103N/R SERIES FAST RECOVERY DIODES Stud Version Features High power FAST recovery diode series 110A 1.0 to 2.0 µs recovery time High voltage ratings up to 2500V High current capability Optimized turn on and turn off characteristics
|
Original
|
I2062
SD103N/R
DO-30
SD103N/R
SD103N/R.
DO-205AC
SD103
041E3
B-1296
20-UNF
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Bulletin I2064 rev. B 10/06 SD203N/R SERIES FAST RECOVERY DIODES Stud Version Features High power FAST recovery diode series 1.0 to 2.0 µs recovery time High voltage ratings up to 2500V High current capability 200A Optimized turn on and turn off characteristics
|
Original
|
I2064
SD203N/R
DO-205AB
SD203N/R
000V/
D203N/
|
PDF
|
RS DT 27 DIODE
Abstract: DO-205AC
Text: Bulletin I2062 rev. C 09/06 SD103N/R SERIES FAST RECOVERY DIODES Stud Version Features High power FAST recovery diode series 1.0 to 2.0 µs recovery time High voltage ratings up to 2500V 110A High current capability Optimized turn on and turn off characteristics
|
Original
|
I2062
SD103N/R
DO-30
SD103N/R
60eries
000V/
D103N/
RS DT 27 DIODE
DO-205AC
|
PDF
|
|
|
stud diode
Abstract: DO-205AB SD203N
Text: SD203N/R Series Vishay High Power Products Fast Recovery Diodes Stud Version , 200 A FEATURES • High power fast recovery diode series • 1.0 to 2.0 µs recovery time RoHS • High voltage ratings up to 2500 V COMPLIANT • High current capability • Optimized turn-on and turn-off characteristics
|
Original
|
SD203N/R
DO-205AB
18-Jul-08
stud diode
DO-205AB
SD203N
|
PDF
|
Untitled
Abstract: No abstract text available
Text: VS-SD203N/R Series www.vishay.com Vishay Semiconductors Fast Recovery Diodes Stud Version 200 A FEATURES • High power fast recovery diode series • 1.0 s to 2.0 μs recovery time • High voltage ratings up to 2500 V • High current capability • Optimized turn-on and turn-off characteristics
|
Original
|
VS-SD203N/R
DO-205AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
S3995
Abstract: SMS3992-00 SMS3994 S3996 SMS1528-00 SMS3991-10 Alpha Industries pin diodes SMS3990 SMS3991-50 MARKING S15
Text: Schottky Mixer and Detector Diodes in EOAlpha Surface Mount Plastic Packages SMS Sériés Features < Æ ° -Æ ^ - For High Volume Commercial Applications Small Surface Mount Packages S0D 323 S O T 23 S 0 T 143 Low Conversion Loss • Tight Parameter Distribution
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UHF variable capacitance diode FEATURES • Excellent linearity · Excellent matching to 2% DMA · Ultra small plastic SMD package · C28: 2.1 pF; ratio: 9 · Low series resistance. APPLICATIONS · Electronic tuning in UHF television tuners · Voltage controlled oscillators
|
Original
|
BB179B
OD523
SC-79)
OD523
SC-79
|
PDF
|
ka s15
Abstract: 150a gto DO-205AC do-30
Text: Previous Datasheet Index Next Data Sheet DISCRETE POWER DIODES and THYRISTORS DATA BOOK To Order Previous Datasheet Index Next Data Sheet Bulletin I2063/A SD153N/R SERIES FAST RECOVERY DIODES Stud Version Features High power FAST recovery diode series 150A
|
Original
|
I2063/A
SD153N/R
DO-30
DO-205AC
DO-30)
-20UNF-2A*
ka s15
150a gto
DO-205AC
do-30
|
PDF
|
HRW0702A
Abstract: HRW0702A SCHOTTKY diode Hitachi DSA00771 SC-59A
Text: ADE-208-109D Z HRW0702A Silicon Schottky Barrier Diode for Rectifying Rev. 4 Nov. 1994 Features Pin Arrangement • Low forward voltage drop and suitable for high effifiency rectifying. • MPAK package is suitable for high density surface mounting and high speed assembly.
|
Original
|
ADE-208-109D
HRW0702A
10msec
SC-59A
HRW0702A
HRW0702A SCHOTTKY diode
Hitachi DSA00771
SC-59A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ADE-208-109D Z HRW0702A Silicon Schottky Barrier Diode for Rectifying HITACHI Rev. 4 Nov. 1994 Pin Arrangement Features • L ow forward volta g e drop and suitable for high effifien cy rectifying. • M P A K p a c k a g e is s u ita b le fo r h ig h d e n s ity
|
OCR Scan
|
ADE-208-109D
HRW0702A
HRW0702A
10msec
SC-59A
|
PDF
|
Hitachi DSA002789
Abstract: No abstract text available
Text: HRW0702A Silicon Schottky Barrier Diode for Rectifying ADE-208-109E Z Rev 5 Features • Low forward voltage drop and suitable for high effifiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly. Ordering Information
|
Original
|
HRW0702A
ADE-208-109E
HRW0702A
SC-59A
Hitachi DSA002789
|
PDF
|
sst s15
Abstract: No abstract text available
Text: SQ I PS! E m 'J y V M t- F 3 Phase Bridge Diode Square In-line Package • W IN - ä s ia OUTLINE DIMENSIONS S15VTDS15VTAD 800V 15A RATINGS • ¡ f ë $ îf it ^ /È ! Î& a Absolute Maximum Ratings b Item Storage Temperature Operating Junction Temperature
|
OCR Scan
|
S15VTDS15VTAD
S15VT
50Hz3EKfe
J514-5
sst s15
|
PDF
|
D634
Abstract: No abstract text available
Text: Bulletin 12065/A International SRectifier SD253N/R SERIES Stud Version FAST RECOVERY DIODES Features • High power FAST recovery diode series ■ 1.5 to 2.0 |js recovery time ■ High voltage ratings up to 1600V ■ High current capability ■ Optimized turn on and turn off characteristics
|
OCR Scan
|
12065/A
SD253N/R
00273T4
D634
|
PDF
|
