S12 MARKING DIODE Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2312 N-Channel 20-V D-S MOSFET SOT-23 APPLICATIONS z DC/DC Converters z Load Switching for Portable Applications 1. GATE 2. SOURCE 3. DRAIN MARKING: S12 Maximum ratings (Ta=25℃ unless otherwise noted)

marking ss14

Abstract: ss14 do-214ac SS14 marking SS15 sma ss14 sma SS15 SS16 ss12 marking ss14 do-214ac sma SS13
Contextual Info: LESHAN RADIO COMPANY, LTD. SS12 – SS16 1A 1A SCHOTTKY SMA DIODES TYPE Marking SS12 SS13 SS14 SS15 SS16 20 30 40 50 60 S12 S13 S14 S15 S16 V F V IF (A) VRRM(V) 0.50 0.50 0.50 0.70 0.70 1.0 IRMI(µA) IP8M(A) 1000 Package Dimensions Trr(ns) – – – –

S12 MARKING DIODE

Abstract: S12 MARKING CODE DIODE SOD882 BAP55L
Contextual Info: BAP55L Silicon PIN diode Rev. 01 — 5 April 2005 Preliminary data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882 leadless ultra small plastic SMD package. 1.2 Features • High speed switching for RF signals ■ Low diode capacitance

S12 MARKING CODE DIODE

Abstract: ND102 s12 diode
Contextual Info: ND102 Semiconductor Antenna Switching Diode Features • Low capacitance : Max.0.4pF • Low series resistance : rs= 1.0Ω Typ. @IF=10mA • UHF/VHF Band RF Switch Applications Ordering Information Type No. Marking Package Code ND102 S SOD-923 Outline Dimensions

ND102M6L

Abstract: S12 MARKING DIODE triple-band antenna switch
Contextual Info: ND102M6L Antenna Switching Diode Array 6 in 1 Features • 6 channel 1 package type Antenna Switching Diode Array • Low capacitance : Max.0.35pF • Low series resistance : rs= 1.1Ω(Typ.)@IF=10mA • GSM Mobile ASM/FEM Module RF Switch Applications [ Triple-Band Switching Diode ]

Contextual Info: ND102M4L Semiconductor Antenna Switching Diode Array 4 in 1 Features • 4 channel 1 package type Antenna Switching Diode Array • Low capacitance : Max.0.35pF • Low series resistance : rs= 1.1Ω(Typ.)@IF=10mA • ASM/FEM Module RF Switch Applications [ Dual-Band Switching Diode ]

S12 MARKING CODE DIODE

Contextual Info: ND102M4AL Antenna Switching Diode Array 4 in 1 Features • 4 channel 1 package type Antenna Switching Diode Array • Low capacitance : Max.0.35pF • Low series resistance : rs= 1.1Ω(Typ.)@IF=10mA • GSM Mobile ASM/FEM Module RF Switch Applications [ Dual-Band Switching Diode ]

ND102M4L

Contextual Info: ND102M4L Semiconductor Antenna Switching Diode Array 4 in 1 Features • 4 channel 1 package type Antenna Switching Diode Array • Low capacitance : Max.0.35pF • Low series resistance : rs= 1.1Ω(Typ.)@IF=10mA • ASM/FEM Module RF Switch Applications [ Dual-Band Switching Diode ]

Contextual Info: ND102M6L Antenna Switching Diode Array 6 in 1 Features • 6 channel 1 package type Antenna Switching Diode Array • Low capacitance : Max.0.35pF • Low series resistance : rs= 1.1Ω(Typ.)@IF=10mA • GSM Mobile ASM/FEM Module RF Switch Applications [ Triple-Band Switching Diode ]

4 channel 1 package type antenna switching diode array

Abstract: S12 MARKING CODE DIODE ND102M4AL
Contextual Info: ND102M4AL Semiconductor Antenna Switching Diode Array 4 in 1 Features • 4 channel 1 package type Antenna Switching Diode Array • Low capacitance : Max.0.35pF • Low series resistance : rs= 1.1Ω(Typ.)@IF=10mA • GSM Mobile ASM/FEM Module RF Switch Applications [ Dual-Band Switching Diode ]

Contextual Info: ND102M4AL Antenna Switching Diode Array 4 in 1 Features • 4 channel 1 package type Antenna Switching Diode Array • Low capacitance : Max.0.35pF • Low series resistance : rs= 1.1Ω(Typ.)@IF=10mA • GSM Mobile ASM/FEM Module RF Switch Applications [ Dual-Band Switching Diode ]

A5 DIODE

Abstract: A6 DIODE DIODE A6 A4 diode k6 diode k1 diode A3 DIODE S12 MARKING DIODE K4 diode KSD-D5H003-000
Contextual Info: ND102M6L Semiconductor Antenna Switching Diode Array 6 in 1 Features • 6 channel 1 package type Antenna Switching Diode Array • Low capacitance : Max.0.35pF • Low series resistance : rs= 1.1Ω(Typ.)@IF=10mA • GSM Mobile ASM/FEM Module RF Switch Applications [ Triple-Band Switching Diode ]

tvs diode marking code fo

Abstract: semtech tvs SOT23-6L Marking Code s12 S12 MARKING CODE DIODE
Contextual Info: _ SMS05 l* ? < 5 F M tjWji T F P H A ugust 28, 1998 TVS Diode Array For ESD and Latch-Up Protection thru SMS24 T E L 8 0 5 -4 9 8 -2 1 11 F A X :805-498-3804 W E B :http://w w w .sem tech.com DESCRIPTION FEATURES The SM S series of TVS arrays are designed to protect

marking code e6

Contextual Info: BAP55L Silicon PIN diode Rev. 2 — 5 September 2011 Preliminary data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882 leadless ultra small plastic SMD package. 1.2 Features and benefits  High speed switching for RF signals

5v tvs

Abstract: SOT23-6L Marking Code S12 MARKING CODE DIODE
Contextual Info: m SMS05 I Today’s Results.Tomorrow^ Vision O ctober 28, 1998 TVS Diode Array For ESD and Latch-Up Protection thru SMS24 T E L 8 0 5 -4 9 8 -2 1 11 F A X :805-498-3804 W E B :http://w w w .sem tech.com DESCRIPTION FEATURES The SM S series of T V S arrays are designed to protect

telefunken ta 400

Abstract: transistor marking 4934
Contextual Info: S 787 T TELEFUNKEN Semiconductors N-channel dual gate MOS-fieldeffect tetrode. Depletion mode. Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages in UHF- and VHF-tuner. Features D D D D Integrated gate protection diodes

S12 MARKING DIODE

Abstract: S12 MARKING CODE DIODE diode marking s12 s12 diode BBY39
Contextual Info: Short-form product specification Philips Semiconductors Double variable capacitance diode BBY39 QUICK REFERENCE DATA APPLICATIONS • Electronic tuners in satellite TV systems. SYMBOL DESCRIPTION Vr continuous reverse voltage Tj operating junction temperature

S12 MARKING DIODE

Abstract: S12 MARKING CODE DIODE SDT12SF 15KV ksd2076
Contextual Info: SDT12SF Semiconductor TVS Diode Features • Transient protection for data lines to IEC61000-4-2 ESD 15KV(air), 8KV(contact ) • Small package for use in portable electronics • Low operating and clamping voltage Applications • Cellular Handsets and Accessories

w13 smd transistor

Contextual Info: S913T / S913TR / S913TRW Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 9 V Supply Voltage 2 1 Comment SOT-143 MOSMIC - MOS Monolithic Integrated Circuit 3 Features • • • • • • • • • Integrated gate protection diodes Low noise figure

marking S12

Abstract: S12 MARKING DIODE K 2078 S12 MARKING CODE DIODE 15KV SDT12S ksd2078
Contextual Info: SDT12S Semiconductor TVS Diode Features • Transient protection for data lines to IEC61000-4-2 ESD 15KV(air), 8KV(contact ) • Small package for use in portable electronics • Low operating and clamping voltage Applications • Cellular Handsets and Accessories

Contextual Info: S849T / S849TR Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 12 V Supply Voltage 2 Comments 1 MOSMIC - MOS Monolithic Integrated Circuit SOT-143 3 1 Features • • • • • • • • • Integrated gate protection diodes Low noise figure

smd transistor 982 sot143

Contextual Info: S886T / S886TR Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 12 V Supply Voltage 2 Comments 1 MOSMIC - MOS Monolithic Integrated Circuit SOT-143 3 1 Features • • • • • • • • • Integrated gate protection diodes Low noise figure

smd transistor sot 4404

Abstract: J51-20
Contextual Info: S849T / S849TR VISHAY Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 12 V Supply Voltage 2 Comments 1 MOSMIC - MOS Monolithic Integrated Circuit SOT-143 3 1 Features • • • • • • • Integrated gate protection diodes Low noise figure

smd transistor 982 sot143

Contextual Info: S886T / S886TR VISHAY Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 12 V Supply Voltage 2 Comments 1 MOSMIC - MOS Monolithic Integrated Circuit SOT-143 3 1 Features • • • • • • • Integrated gate protection diodes Low noise figure