S1119 Search Results
S1119 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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ADS1119IPWT |
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16-bit, 1kSPS, 4-ch general-purpose delta-sigma ADC with I2C interface and external Vref inputs 16-TSSOP -40 to 125 |
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ADS1119IPW |
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16-bit, 1kSPS, 4-ch general-purpose delta-sigma ADC with I2C interface and external Vref inputs 16-TSSOP -40 to 125 |
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ADS1119IPWR |
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16-bit, 1kSPS, 4-ch general-purpose delta-sigma ADC with I2C interface and external Vref inputs 16-TSSOP -40 to 125 |
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ADS1119IRTET |
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16-bit, 1kSPS, 4-ch general-purpose delta-sigma ADC with I2C interface and external Vref inputs 16-WQFN -40 to 125 |
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ADS1119IRTER |
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16-bit, 1kSPS, 4-ch general-purpose delta-sigma ADC with I2C interface and external Vref inputs 16-WQFN -40 to 125 |
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S1119 Price and Stock
Texas Instruments ADS1119IRTETIC ADC 16BIT SIGMA-DELTA 16WQFN |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ADS1119IRTET | Cut Tape | 2,112 | 1 |
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ADS1119IRTET | 683 |
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ADS1119IRTET | 20,196 |
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ADS1119IRTET | 7,762 |
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Essentra Components MWS1-1-19CBL CLIP WIRE SADDLE PUSH IN |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MWS1-1-19 | Bulk | 1,863 | 1 |
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MWS1-1-19 | 2,019 |
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MWS1-1-19 | Bulk | 507 | 1 |
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MWS1-1-19 | Bulk | 4 Weeks | 1,000 |
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MWS1-1-19 | 529 |
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MWS1-1-19 |
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Texas Instruments ADS1119IPWTIC ADC 16BIT SIGMA-DELTA 16TSSOP |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ADS1119IPWT | Digi-Reel | 1,193 | 1 |
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ADS1119IPWT | 2,724 |
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ADS1119IPWT | Cut Tape | 244 | 0 Weeks, 1 Days | 1 |
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ADS1119IPWT | 48,534 |
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Essentra Components SMWS1-1-19CBL CLIP WIRE SADDLE PUSH IN |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SMWS1-1-19 | Bulk | 1,000 | 1 |
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SMWS1-1-19 | 1,000 |
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SMWS1-1-19 | Bulk | 1,126 | 1 |
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SMWS1-1-19 | Bulk | 4 Weeks | 1,000 |
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SMWS1-1-19 | 1,240 |
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SMWS1-1-19 | 4,000 |
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MEC Switches A/S 1IS11-19.0CAP TACTILE ROUND CLEAR |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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1IS11-19.0 | Bulk | 859 | 1 |
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S1119 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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marking L4 mosfet sot23
Abstract: SI2304
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Si2304BDS 2002/95/EC O-236 OT-23) Si2304BDS-T1-E3 Si2304BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC marking L4 mosfet sot23 SI2304 | |
sir878
Abstract: SIR878ADP vishay siliconix 1999
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SiR878ADP 2002/95/EC SiR878ADP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sir878 vishay siliconix 1999 | |
Contextual Info: SiS778DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)e 0.0050 at VGS = 10 V 35 0.0062 at VGS = 4.5 V 35 VDS (V) 30 Qg (Typ.) 13.3 nC PowerPAK 1212-8 S 3.30 mm 3.30 mm 1 APPLICATIONS S 2 |
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SiS778DN 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
diode s1 77
Abstract: S124 diode s1 diode s1 74 socket s1 S1-100 S1-128
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S1-118 S1-110 S1-103 S1-100 S1-122 S1-127 TTL11 TTL13 TTL15 TTL16 diode s1 77 S124 diode s1 diode s1 74 socket s1 S1-100 S1-128 | |
Contextual Info: SQJ912EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) (Ω) at VGS = 10 V 0.014 RDS(on) (Ω) at VGS = 4.5 V 0.015 ID (A) per leg |
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SQJ912EP 2002/95/EC AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SQJ858EP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested 40 RDS(on) () at VGS = 10 V |
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SQJ858EP AEC-Q101 2002/95/EC SQJ858EP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: Si2304BDS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.070 at VGS = 10 V 3.2 0.105 at VGS = 4.5 V 2.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested |
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Si2304BDS 2002/95/EC O-236 OT-23) Si2304BDS-T1-E3 Si2304BDS-T1-GE3 11-Mar-11 | |
Contextual Info: SQJ858EP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested 40 RDS(on) () at VGS = 10 V |
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SQJ858EP AEC-Q101 2002/95/EC SQJ858EP-T1-GE3 11-Mar-11 | |
Contextual Info: New Product SiR878ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.014 at VGS = 10 V 40 0.0148 at VGS = 7.5 V 38 0.018 at VGS = 4.5 V 34 VDS (V) 100 Qg (Typ.) 13.9 nC • Halogen-free According to IEC 61249-2-21 |
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SiR878ADP 2002/95/EC SiR878ADP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: New Product SiR878ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.014 at VGS = 10 V 40 0.0148 at VGS = 7.5 V 38 0.018 at VGS = 4.5 V 34 VDS (V) 100 Qg (Typ.) 13.9 nC • Halogen-free According to IEC 61249-2-21 |
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SiR878ADP 2002/95/EC SiR878ADP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Si2304BDS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.070 at VGS = 10 V 3.2 0.105 at VGS = 4.5 V 2.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested |
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Si2304BDS 2002/95/EC O-236 OT-23) Si2304BDS-T1-E3 Si2304BDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. | |
Contextual Info: New Product SiR878ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.014 at VGS = 10 V 40 0.0148 at VGS = 7.5 V 38 0.018 at VGS = 4.5 V 34 VDS (V) 100 Qg (Typ.) 13.9 nC • Halogen-free According to IEC 61249-2-21 |
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SiR878ADP 2002/95/EC SiR878ADP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: Si7115DN Vishay Siliconix P-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) () ID (A) 0.295 at VGS = - 10 V - 8.9e 0.315 at VGS = - 6 V - 8.6e Qg (Typ.) 23.2 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Definition |
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Si7115DN 2002/95/EC Si7115DN-T1-E3 Si7115DN-T1-GE3 11-Mar-11 | |
Contextual Info: SQM120N02-1m3L www.vishay.com Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 20 RDS(on) () at VGS = 10 V 0.0013 RDS(on) () at VGS = 4.5 V 0.0017 |
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SQM120N02-1m3L AEC-Q101 2002/95/EC O-263 O-263 SQM120N02-1m3L-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. | |
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STR 22062
Abstract: D1667 amp 4546 str w 5634 STR 5634 MAX09
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socket s1
Abstract: diode s1 61 diode s1 77 diode s1 85 S124 040 d10 diode s1 diode s1 74 HW-133-PQ160 S1 18
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S1-90 S1-82 S1-79 S1-77 TTL10 TTL12 TTL14 TTL18 TTL44 SGND/D15 socket s1 diode s1 61 diode s1 77 diode s1 85 S124 040 d10 diode s1 diode s1 74 HW-133-PQ160 S1 18 | |
SO8LContextual Info: SQJ912EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.014 RDS(on) () at VGS = 4.5 V 0.015 ID (A) per leg |
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SQJ912EP 2002/95/EC AEC-Q101 SQJ912EP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SO8L | |
Contextual Info: New Product SiR878ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.014 at VGS = 10 V 40 0.0148 at VGS = 7.5 V 38 0.018 at VGS = 4.5 V 34 VDS (V) 100 Qg (Typ.) 13.9 nC • Halogen-free According to IEC 61249-2-21 |
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SiR878ADP 2002/95/EC SiR878ADP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Si7115DN Vishay Siliconix P-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) () ID (A) 0.295 at VGS = - 10 V - 8.9e 0.315 at VGS = - 6 V - 8.6e Qg (Typ.) 23.2 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Definition |
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Si7115DN 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: austriamicrosystems AG is now ams AG The technical content of this austriamicrosystems datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com |
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S1119 144-LED 320mA AS1119 30LEDs) | |
SQJ912EP-T1-GE3Contextual Info: SQJ912EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.014 RDS(on) () at VGS = 4.5 V 0.015 ID (A) per leg |
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SQJ912EP 2002/95/EC AEC-Q101 SQJ912EP-T1-GE3 11-Mar-11 SQJ912EP-T1-GE3 | |
si1308edl applicationContextual Info: New Product Si1308EDL Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)c 0.132 at VGS = 10 V 1.5 0.144 at VGS = 4.5 V 1.4 0.185 at VGS = 2.5 V 1.3 VDS (V) 30 Qg (Typ.) 1.4 nC APPLICATIONS SOT-323 SC-70 (3-LEADS) |
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Si1308EDL 2002/95/EC OT-323 SC-70 Si1308EDL-T1-GE3 11-Mar-11 si1308edl application | |
Contextual Info: Si4532ADY Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) () • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC |
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Si4532ADY 2002/95/EC Si4532ADY-T1-E3 Si4532ADY-T1-GE3 11-Mar-11 | |
SI1308EDLContextual Info: New Product Si1308EDL Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)c 0.132 at VGS = 10 V 1.5 0.144 at VGS = 4.5 V 1.4 0.185 at VGS = 2.5 V 1.3 VDS (V) 30 Qg (Typ.) 1.4 nC APPLICATIONS SOT-323 SC-70 (3-LEADS) |
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Si1308EDL 2002/95/EC OT-323 SC-70 Si1308EDL-T1-GE3 11-Mar-11 |