kf 203 transistor
Abstract: 682 MARKING SOT-23 NE AND micro-X transistor KF 507 2SC4227 2SC5007 2SC5012 NE681 NE68100 NE68118
Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz E rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e E d w h o s l w PL
|
Original
|
PDF
|
NE681
NE681
NE68100
NE68118-T1
NE68119-T1
NE68130-T1
NE68133-T1B
NE68135
NE68139-T1
kf 203 transistor
682 MARKING SOT-23
NE AND micro-X
transistor KF 507
2SC4227
2SC5007
2SC5012
NE68100
NE68118
|
1820 0944
Abstract: NE68135 ca 4558 NE68130 BJT BF 167 bjt 522 BJT IC Vce 2SC4227 2SC5007 NE681
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz E • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz B • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) s
|
Original
|
PDF
|
NE681
NE681
1820 0944
NE68135
ca 4558
NE68130
BJT BF 167
bjt 522
BJT IC Vce
2SC4227
2SC5007
|
NE68135
Abstract: transistor npn d 2078 common emitter bjt transistor bf 494 NE68133-T1B-A mje 3009
Text: SILICON TRANSISTOR NE681 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e E d w h o l w PL l as r e t o n o f a f r d e DESCRIPTION e o
|
Original
|
PDF
|
NE681
NE68100
NE68118-T1
NE68119-T1
NE68130-T1
NE68133-T1B
NE68135
NE68139-T1
NE68139R-T1
transistor npn d 2078
common emitter bjt
transistor bf 494
NE68133-T1B-A
mje 3009
|
transistor "micro-x" "marking" 102
Abstract: laser drive ic 3656 4558 L IC 2030 PIN CONNECTIONS LB 1639 mje 3009
Text: SILICON TRANSISTOR NE681 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz E rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e
|
Original
|
PDF
|
NE681
transistor "micro-x" "marking" 102
laser drive ic 3656
4558 L
IC 2030 PIN CONNECTIONS
LB 1639
mje 3009
|
BJT characteristics
Abstract: NE68135 NE AND micro-X 2SC4227 2SC5007 2SC5012 NE681 NE68100 NE68118 NE68119
Text: SILICON TRANSISTOR NE681 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz E rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e
|
Original
|
PDF
|
NE681
BJT characteristics
NE68135
NE AND micro-X
2SC4227
2SC5007
2SC5012
NE68100
NE68118
NE68119
|
kf 203 transistor
Abstract: 08E-12 IC 2030 PIN CONNECTIONS bjt 522 DATASHEET OF BJT 547 NE AND micro-X 2SC4227 2SC5007 BF 194 npn transistor NE681
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz E • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz B • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) DESCRIPTION
|
Original
|
PDF
|
NE681
NE681
NE68100
NE68118-T1
NE68119-T1
NE68130-T1
NE68133-T1B
NE68135
kf 203 transistor
08E-12
IC 2030 PIN CONNECTIONS
bjt 522
DATASHEET OF BJT 547
NE AND micro-X
2SC4227
2SC5007
BF 194 npn transistor
|
transistor bf 760
Abstract: MCH4008 945 npn
Text: MCH4008 Ordering number : ENN8395 NPN Epitaxial Planar Silicon Transistor MCH4008 UHF to C Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage. High gain : NF=1.1dB typ f=2GHz .
|
Original
|
PDF
|
MCH4008
ENN8395
20GHz
S21e2
transistor bf 760
MCH4008
945 npn
|
MCH4008
Abstract: TB 2920
Text: MCH4008 Ordering number : ENN8395 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4008 UHF to C Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage.
|
Original
|
PDF
|
MCH4008
ENN8395
20GHz
S21e2
MCH4008
TB 2920
|
Untitled
Abstract: No abstract text available
Text: 2SC5945 Si NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0443-0300 Rev.3.00 Aug 03, 2006 Features • Excellent Linearity P1dB at output = +26 dBm typ. f = 2.4 GHz • High Collector to Emitter Voltage VCEO = 5 V • Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone.
|
Original
|
PDF
|
2SC5945
REJ03G0443-0300
PWSN0006JA-A
|
ZO 607 MA
Abstract: transistor zo 607 zo 607 zo 107 2SC5945 2SC5945TR-E
Text: 2SC5945 Si NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0443-0300 Rev.3.00 Aug 03, 2006 Features • Excellent Linearity P1dB at output = +26 dBm typ. f = 2.4 GHz • High Collector to Emitter Voltage VCEO = 5 V • Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone.
|
Original
|
PDF
|
2SC5945
REJ03G0443-0300
PWSN0006JA-A
ZO 607 MA
transistor zo 607
zo 607
zo 107
2SC5945
2SC5945TR-E
|
mje 3007
Abstract: No abstract text available
Text: Ordering number : ENA0389A MCH4009 RF Transistor 3.5V, 40mA, fT=25GHz, NPN Single MCPH4 http://onsemi.com Features • • • • • Low-noise use : NF=1.1dB typ f=2GHz High cut-off frequency : fT=25GHz typ (VCE=3V) Low operating voltage High gain : |S21e|2=17dB typ (f=2GHz)
|
Original
|
PDF
|
ENA0389A
MCH4009
25GHz,
25GHz
A0389-15/15
mje 3007
|
Untitled
Abstract: No abstract text available
Text: 2SC5945 Si NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0443-0200 Rev.2.00 Jan 27, 2006 Features • Excellent Linearity P1dB at output = +26 dBm typ. f = 2.4 GHz • High Collector to Emitter Voltage VCEO = 5 V • Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone.
|
Original
|
PDF
|
2SC5945
REJ03G0443-0200
PWSN0006JA-A
|
ZO 607 MA
Abstract: 149-5 zo 607 150-1 2SC5945
Text: 2SC5945 Si NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0443-0100 Rev.1.00 Oct.28.2004 Features • Excellent Linearity P1dB at output = +26 dBm typ. f = 2.4 GHz • High Collector to Emitter Voltage VCEO = 5 V • Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone.
|
Original
|
PDF
|
2SC5945
REJ03G0443-0100
WSON0202-6V
Unit2607
ZO 607 MA
149-5
zo 607
150-1
2SC5945
|
sanyo eg 8500
Abstract: transistor 9747 MCH4009
Text: MCH4009 Ordering number : ENA0389 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4009 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage.
|
Original
|
PDF
|
MCH4009
ENA0389
25GHz
A0389-13/13
sanyo eg 8500
transistor 9747
MCH4009
|
|
|
Untitled
Abstract: No abstract text available
Text: MCH4009 Ordering number : ENA0389 NPN Epitaxial Planar Silicon Transistor MCH4009 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage. High gain : NF=1.1dB typ f=2GHz .
|
Original
|
PDF
|
MCH4009
ENA0389
25GHz
A0389-13/13
|
Untitled
Abstract: No abstract text available
Text: MCH4009 Ordering number : ENA0389A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4009 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • • Low-noise use : NF=1.1dB typ f=2GHz High cut-off frequency : fT=25GHz typ (VCE=3V)
|
Original
|
PDF
|
MCH4009
ENA0389A
25GHz
A038915/15
|
WQFN0202-8V
Abstract: No abstract text available
Text: HSG2002 SiGe HBT High Frequency Medium Power Amplifier REJ03G0444-0100 Rev.1.00 Oct.28.2004 Features • High Transition Frequency fT = 28.5 GHz typ. • Low Distortion and Excellent Linearity P1dB at output = +25 dBm typ. f = 5.8 GHz • High Collector to Emitter Voltage
|
Original
|
PDF
|
HSG2002
REJ03G0444-0100
WQFN0202-8V
vo-900
Unit2607
WQFN0202-8V
|
mje 3007
Abstract: 264 bf 6032 TB 1226 EN ENA0389A mch4009 MJE 13500
Text: MCH4009 Ordering number : ENA0389A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4009 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • • Low-noise use : NF=1.1dB typ f=2GHz High cut-off frequency : fT=25GHz typ (VCE=3V)
|
Original
|
PDF
|
ENA0389A
MCH4009
25GHz
A038915/15
mje 3007
264 bf 6032
TB 1226 EN
ENA0389A
mch4009
MJE 13500
|
Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PDF
|
|
2SC5945
Abstract: 2SC5945TR-E 0773
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PDF
|
|
30S124
Abstract: KA 1046 Y 839 marking code 576 zo 103 ma A 1757
Text: HSG2002 SiGe HBT High Frequency Medium Power Amplifier REJ03G0444-0300 Rev.3.00 Jun 21, 2006 Features • High Transition Frequency fT = 28.5 GHz typ. • Low Distortion and Excellent Linearity P1dB at output = +25 dBm typ. f = 5.8 GHz • High Collector to Emitter Voltage
|
Original
|
PDF
|
HSG2002
REJ03G0444-0300
PWQN0008ZA-A
30S124
KA 1046 Y 839
marking code 576
zo 103 ma
A 1757
|
KA 1046 Y 839
Abstract: KA 1046 Y 840
Text: HSG2002 SiGe HBT High Frequency Medium Power Amplifier REJ03G0444-0300 Rev.3.00 Jun 21, 2006 Features • High Transition Frequency fT = 28.5 GHz typ. • Low Distortion and Excellent Linearity P1dB at output = +25 dBm typ. f = 5.8 GHz • High Collector to Emitter Voltage
|
Original
|
PDF
|
HSG2002
REJ03G0444-0300
PWQN0008ZA-A
KA 1046 Y 839
KA 1046 Y 840
|
transistor TT 2146
Abstract: AT-32032 AT-32032-BLK AT-32032-TR1 60668 transistor ajw 64256
Text: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32032 Features • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance at 2.7 V, 5 mA: 900 MHz: 1 dB NF, 15 dB GA
|
Original
|
PDF
|
AT-32032
OT-323
SC-70)
SC-70
OT-323)
5965-6216E
transistor TT 2146
AT-32032
AT-32032-BLK
AT-32032-TR1
60668
transistor ajw
64256
|
transistor TT 2146
Abstract: 3335 2.2 k resistor AJW 623 AT-32032 AT-32032-BLK C2L4 transistors malaysia 9409 marking R5* sc-70
Text: Agilent AT-32032 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Features Description Agilent’s AT-32032 is a high performance NPN bipolar transistor that has been optimized for maximum ft at low voltage operation, making it ideal for use
|
Original
|
PDF
|
AT-32032
AT-32032
OT-323
SC-70)
5965-6216E
5989-2644EN
transistor TT 2146
3335
2.2 k resistor
AJW 623
AT-32032-BLK
C2L4
transistors malaysia 9409
marking R5* sc-70
|
