SW SPDT 6pin
Abstract: HS350 UPG2015TB UPG2015TB-E3 VP215
Text: NEC's 1W SINGLE CONTROL L, S-BAND SPDT SWITCH UPG2015TB FEATURES DESCRIPTION • SUPPLY VOLTAGE: VDD = 2.7 to 3.0 V 2.8 V TYP. NEC's UPG2015TB is a single control GaAs MMIC L, S-band SPDT (Single Pole Double Throw) switch for mobile phone and L, S-band applications.
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UPG2015TB
UPG2015TB
HS350
SW SPDT 6pin
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UPG2015TB-E3
VP215
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2179TB L, S-BAND SPDT SWITCH DESCRIPTION The µPG2179TB is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 2.5
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PG2179TB
PG2179TB
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SW SPDT 6pin
Abstract: HS350 UPG2015TB UPG2015TB-E3-A VP215
Text: NEC's 1W SINGLE CONTROL UPG2015TB L, S-BAND SPDT SWITCH FEATURES DESCRIPTION • SUPPLY VOLTAGE: VDD = 2.7 to 3.0 V 2.8 V TYP. NEC's UPG2015TB is a single control single control GaAs MMIC L, S-band SPDT (Single Pole Double Throw) switch for mobile phone and L, S-band applications.
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UPG2015TB
UPG2015TB
SW SPDT 6pin
HS350
UPG2015TB-E3-A
VP215
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marking g4c
Abstract: HS350 PG2179TB VP215 UPG2179TB-E4
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2179TB L, S-BAND SPDT SWITCH DESCRIPTION The µPG2179TB is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 2.5
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PG2179TB
PG2179TB
marking g4c
HS350
VP215
UPG2179TB-E4
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PG2179TB
Abstract: marking g4c PG2179TB-E4 SW SPDT 6pin HS350 VP215
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2179TB L, S-BAND MEDIUM POWER SPDT SWITCH DESCRIPTION The μPG2179TB is a GaAs MMIC L, S-band SPDT Single Pole Double Throw switch for mobile phone and other L, S-band applications. This device operates with dual control voltages of 2.5 to 5.3 V. This device can operate from 0.05 to
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PG2179TB
PG2179TB
marking g4c
PG2179TB-E4
SW SPDT 6pin
HS350
VP215
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30GHz switch
Abstract: 30GHZ GAAS
Text: PRELIMINARY PRODUCT INFORMATION GaAs INTEGRATED CIRCUIT uPG2158T5K L,S-BAND SPDT SWITCH DESCRIPTION The uPG2158T5K is a GaAs MMIC for L,S-band SPDT（Single Pole Double Throw）which were designed for mobile phone and the another L,S-band applications. This device can operate frequency from 0.05GHz to 3.0GHz, having the low insertion loss and high isolation.
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uPG2158T5K
05GHz
30GHz switch
30GHZ GAAS
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1838 infrared
Abstract: HS350 marking G4 UPG21
Text: GaAs INTEGRATED CIRCUIT µPG2160T5K L, S-BAND SINGLE CONTROL SPDT SWITCH DESCRIPTION The µPG2160T5K is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and other L, S-band applications. This device can operate frequency from 0.5 to 3.0 GHz, with low insertion loss and high isolation.
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PG2160T5K
PG2160T5K
1838 infrared
HS350
marking G4
UPG21
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HS350
Abstract: VP215
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG168TB L, S-BAND SPDT SWITCH DESCRIPTION The µPG168TB is GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L, S-band application. This device can operate frequency from 0.5 to 2.5 GHz, having the low insertion loss and high isolation.
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PG168TB
PG168TB
90NEC
HS350
VP215
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HS350
Abstract: VP215
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2015TB L, S-BAND SPDT SWITCH DESCRIPTION The µPG2015TB is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L, S-band application. This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.
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PG2015TB
PG2015TB
HS350
VP215
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uPG2214TK
Abstract: HS350 PG2214TK VP215
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2214TK L, S-BAND SPDT SWITCH DESCRIPTION The µPG2214TK is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from
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PG2214TK
PG2214TK
uPG2214TK
HS350
VP215
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2159T6R L, S-BAND SPDT SWITCH DESCRIPTION The μPG2159T6R is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band applications. This device can operate 2 control switching by control voltage 1.8 to 3.3 V. This device can operate frequency from
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PG2159T6R
PG2159T6R
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SW SPDT 6pin
Abstract: HS350 VP215
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2030TK L, S-BAND SPDT SWITCH DESCRIPTION The µPG2030TK is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 2.7 to 3.0 V. This device can operate frequency from
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PG2030TK
PG2030TK
SW SPDT 6pin
HS350
VP215
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2214TB L, S-BAND SPDT SWITCH DESCRIPTION The µPG2214TB is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from
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PG2214TB
PG2214TB
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G4j rf
Abstract: SW SPDT 6pin HS350 VP215 UPG2214Tb
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2214TB L, S-BAND SPDT SWITCH DESCRIPTION The µPG2214TB is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from
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PG2214TB
PG2214TB
G4j rf
SW SPDT 6pin
HS350
VP215
UPG2214Tb
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G4j rf
Abstract: No abstract text available
Text: A Business Partner of Renesas Electronics Corporation. Preliminary PG2214TB GaAs Integrated Circuit for L, S-Band SPDT Switch Data Sheet R09DS0050EJ0400 Rev.4.00 Sep 10, 2012 DESCRIPTION The μPG2214TB is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for
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Untitled
Abstract: No abstract text available
Text: NEC's ½W UPG168TB L, S-BAND SPDT SWITCH FEATURES DESCRIPTION • SWITCH CONTROL VOLTAGE: Vcont H = 2.5 to 5.3 V (3.0 V TYP.) Vcont (L) = −0.2 to +0.2 V (0 V TYP.) NEC's UPG168TB is a GaAs MMIC L, S-band SPDT (Single Pole Double Throw) switch for mobile phone and L,
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HS350
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UPG2214TK-E2-A
Abstract: UPG2214TK Pin diode G4k SW SPDT 6pin HS350 VP215
Text: NEC's ½W LOW VOLTAGE UPG2214TK L, S-BAND SPDT SWITCH FEATURES DESCRIPTION • SWITCH CONTROL VOLTAGE: Vcont H = 1.8 to 5.3 V (3.0 V TYP.) Vcont (L) = −0.2 to +0.2 V (0 V TYP.) NEC's UPG2214TK is a GaAs MMIC L, S-band SPDT (Single Pole Double Throw) switch for mobile phones and other
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UPG2214TK
UPG2214TK
HS350
UPG2214TK-E2-A
Pin diode G4k
SW SPDT 6pin
HS350
VP215
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HS350
Abstract: package T6R
Text: GaAs INTEGRATED CIRCUIT PG2406T6R 0.01 to 3.0 GHz SPDT SWITCH DESCRIPTION The μPG2406T6R is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were designed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 3.3 V. This device can operate frequency from
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PG2406T6R
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HS350
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Untitled
Abstract: No abstract text available
Text: GaAs INTEGRATED CIRCUIT PG2406TK 0.01 to 3.0 GHz SPDT SWITCH DESCRIPTION The PG2406TK is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were designed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency
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PG2406TK
PG2406TK
PG10746EJ01V0DS
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Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2406T6R 0.01 to 3.0 GHz SPDT SWITCH DESCRIPTION The μPG2406T6R is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were designed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 3.3 V. This device can operate frequency from
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PG2406T6R
PG2406T6R
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2406T6R 0.01 to 3.0 GHz SPDT SWITCH DESCRIPTION The μPG2406T6R is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were designed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 3.3 V. This device can operate frequency from
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PG2406T6R
PG2406T6R
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Untitled
Abstract: No abstract text available
Text: NEC UPG107B UPG107P S-BAND SPDT MMIC SWITCH OUTLINE DIMENSIONS DESCRIPTION Units in mm OUTLINE BF08 UPG107B is an S-Band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for radar application. The device can operate from DC to 3.4 GHz. It Is housed in an
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UPG107B
UPG107P
UPG107B
UPG107B,
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Untitled
Abstract: No abstract text available
Text: ^24^02^ 001ÖGÖ7 S l ö MITSUBISHI SEMICONDUCTOR <GaAs MMIC MGF7051 UHF BAND GaAs SPDT SWITCH IC DESCRIPTION MGF7Q51 is SPOT switch lor 0.8 to 2.0GHz band. FEATURES •F a s t switching speed Trise,Tfali^7 nsec) •L o w Insertion loss O.SdB •H ig h Isolation
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MGF7051
MGF7Q51
22dBm
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Vl02
Abstract: 9.75 GHz oscillator
Text: D a ta S h e e l ^ EiMhDIGICS Ku-Band DBS MMIC Downconverter ADVANCED PRODUCT INFORMATION Your GaAs ÍC Source _ REV 2 FUNCTIONAL i? ®! Integrated Monolithic Downconverter Covers both FSS & DBS Bands Band Switching Capability
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AKD2806
Vl02
9.75 GHz oscillator
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