S 8050 TRANSISTOR Search Results

diode st 4148

Abstract: ST 4148 LL4148 st 8050 sot-23 st 8050 9016 transistor 9014 SOT 23 4148 st TRANSISTOR 4148 1N4001-1N4007
Contextual Info: TRANSISTOR & DIODE Transistor -S T 8050 - 1.5A TO-92 - ST 8050 (TO-92) - ST 8550 - 1.5A (TO-92) - ST 8550 (TO-92) - ST 9011 (TO-92) - ST 9012 (TO-92) - ST 9013 (TO-92) - ST 9014 (TO-92 -S T 9015 (TO-92) - ST 9016 (TO-92) -S T 9018 (TO-92) o - MMBT8050LT1 -1.5A (SOT-23)

200 watt audio ic

Abstract: ic 8050 8050h
Contextual Info: CRÛ 8050 G E N E R A L D E S C R IP T IO N :- •4 H ie 8 0 5 0 is an NPN epitaxial silicon planar transistor designed for use in the audio ou tp ut stage and converter/inverter circuits. Complem entary to 8550. TO-92A R A T IN G S Note 1 Maximum Temperatures

transistor 8550

Abstract: CL8550 8550 transistor h 8550 pnp transistor
Contextual Info: CL8550 T 0 -9 2 B oENERAL DESCRIPTION:— The 8550 is a PNP epitaxial silicon planar transistor designed for use in the audio output stage and converter/inverter circuits. Complementary to 8050. ABSOLUTE M A X IM U M R A T IN G S „ T O -928 (Note 1) Maximum Temperatures

h 8550 pnp transistor

Contextual Info: 8550 G E N E R A L D E S C R IP T IO N :- Hie 8550 is a PNP epitaxial silicon planar transistor designed for use in the audio output stage and converter/inverter circuits. Complementary to 8050. A BSO LU T E M A X IM U M R A T IN G S TO-92A Note 1 Maximum Temperatures

CL8550

Abstract: 8550 ecb transistor 8550 transistor 8550 d cl855 PNP transistor 8550 transistor 8550 ECB
Contextual Info: JENERAL DESCRIPTION:— The 8 5 5 0 is a PNP epitaxial silicon planar transistor designed for use in the audio output stage and converter/inverter circuits. Complementary to 8050. A B SO LU TE M A X IM U M R A T IN G S N ote T O -9 2 8 1 Maximum Temperatures

NPN transistor 8050d

Abstract: bc 8050 TRANSISTOR 8050 8050 d h 8050 transistor 8050 pin details NPN transistor 500ma TO-92 he 8050 d transistor TRANSISTOR c 8050 transistor b 8050
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR 8050 SR13 TO-92 Plastic Package E BC ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL VCEO VALUE 25 UNITS

BR 8050 D

Abstract: transistor br 8050 BR 8050 8050 TRANSISTOR PNP 8050 pnp transistor NPN transistor 8050d transistor b 8050 TRANSISTOR c 8050 80500 TRANSISTOR 8050 d h
Contextual Info: HN 8050 NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type

st 8050d

Abstract: st8050c st 8050C ST8050D transistor b 8050 st 8050 8050B transistor br 8050 transistor 8050d 8050c transistor
Contextual Info: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As

st 8050d

Abstract: 8050 TRANSISTOR PNP BR 8050 BR 8050 D transistor br 8050 st8050c st 8050C 8050 pnp transistor NPN transistor 8050d 8050D
Contextual Info: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As

transistor br 8050

Abstract: BR 8050 D BR 8050 NPN transistor 8050 PNP 8550 BR 8050 c hFE 8050 transistor b 8050 1/STK 8050 ic
Contextual Info: 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As

st 8050d

Abstract: NPN transistor 8050d st8050c TRANSISTOR c 8050 transistor br 8050 BR 8050 D BR 8050 transistor b 8050 8050 pnp transistor 8050 TRANSISTOR PNP
Contextual Info: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As

st 8050d

Abstract: st8050c st8050d BR 8050 D st 8050C 8050c transistor 8050 TRANSISTOR PNP BR 8050 st 8050 8050B
Contextual Info: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As

8050 D 168

Abstract: NPN transistor 8050 168 HT16522 npn 8050 HT16523 HT16520 8050 TRANSISTOR HT16526 NPN transistor 8050
Contextual Info: HT16520 16.8 Second Music Voice Features • • • • • • • • • Operating voltage: 2.4V~5.0V Directly driving an external transistor Low stand-by current 1µA Typ. for VDD=3V Minimum external components 508 notes maximum for table ROM Programmable silence length (0~4 secs) and

8050 transistor

Abstract: 91450 1N4148 HT818D0
Contextual Info: HT818D0 22.4 Second LOG-PCM Speech Features • • • • • • • • • • Operating voltage: 2.4V~5.0V Directly driving an output transistor Low stand-by current 1µA Typ. for VDD=3V Minimum external components FLAG1 options: – End-pulse output

8050 D 168

Abstract: 1N4148 HT817D0 transistor 8050 using
Contextual Info: HT817D0 16.8 Second LOG-PCM Speech Features • • • • • • • • • • Operating voltage: 2.4V~5.0V Directly driving an output transistor Low stand-by current 1µA Typ. for VDD=3V Minimum external components FLAG1 options: – End-pulse output

NPN transistor 8050d

Abstract: BR 8050 D transistor br 8050 st 8050d 8050c 8050 pnp transistor 8050c transistor BR 8050 S 8050 transistor 8050d
Contextual Info: ST 8050 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As

NPN transistor 8050d

Abstract: BR 8050 D 8050c transistor transistor BR 8050 st 8050d 8050d BR 8050 TRANSISTOR 8050D transistor S 8050 8050 pnp transistor
Contextual Info: ST 8050 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As

equivalent of transistor 8050

Abstract: 8050F
Contextual Info: LTM8050 58V, 2A Step-Down µModule Regulator Features Description Wide Input Voltage Range: 3.6V to 58V 60V Absolute Maximum n Up to 2A Output Current n Parallelable for Increased Output Current n 0.8V to 24V Output Voltage n Adjustable Switching Frequency: 100kHz to 2.4MHz

equivalent of transistor 8050

Abstract: 8050 TRANSISTOR equivalent
Contextual Info: LTM8050 58V, 2A Step-Down µModule Regulator FEATURES DESCRIPTION Wide Input Voltage Range: 3.6V to 58V 60V Absolute Maximum n Up to 2A Output Current n Parallelable for Increased Output Current n 0.8V to 24V Output Voltage n Adjustable Switching Frequency: 100kHz to 2.4MHz

8050 TRANSISTOR equivalent

Contextual Info: LTM8050 58V, 2A Step-Down µModule Regulator FEATURES DESCRIPTION Wide Input Voltage Range: 3.6V to 58V 60V Absolute Maximum n Up to 2A Output Current n Parallelable for Increased Output Current n 0.8V to 24V Output Voltage n Adjustable Switching Frequency: 100kHz to 2.4MHz

transistor S 8050

Abstract: ggqb2 8A273 BYW60 Diode BYW 56 150TV diodes byw transistor 8050 d diode BYW 60
Contextual Info: S G S^C D I 7 ^ 2 3 7 S -TH G M S O N O THO M SO N-CSF QODEEMO BYWB05Q 200 BYW 80 150A DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFF IC IE N C Y FA ST R EC O V ERY R E C T IFIE R S REDRESSEURS RAPIDES A HAUT RENDEMENT 59C 02240 f D ^ o î - n ^ HIGH EFFICIENCY

diode BYW 66

Abstract: diode P2F DIODE DO-220 high efficiency fast recovery diode byw BYW 90 diode BYW 85 BYW 26 8050 2D C diode BYW diode BYW 60
Contextual Info: S^C D I 7 ^ 2 3 7 S G S-THGMSON O THO M SO N-CSF QODEEMO BYWB05Q 200 BYW 80 150A DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFF IC IE N C Y FA ST R EC O V ERY R E C T IFIE R S REDRESSEURS RAPIDES A HAUT RENDEMENT 59C 0 2 2 4 0 f D ^ o î - n ^ HIGH EFFICIENCY

Contextual Info: FORWARD INTERNATIONAL ELECTRONICS LTD. SEMICONDUCTOR TECHNICAL DATA 8550 PNP EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION Package: TO-92 * Complement to 8050 * Collector Current: lc—1.5A * Collector Dissipation Pc=lW TtoF=25°C

eSC170

Abstract: P41 transistor 8050 TRANSISTOR transistor S 8050
Contextual Info: eSB/eSC Drive Motor Application Notes ELAN MICROELECTRONICS CORP. Document Number : Date of Issue : Issue Version : Supported Chips : AP-eSC-0034E-V1 November 2005 1.0 eSB170, eSB200, eSB270, eSB320, eSC170, eSC200 eSC270, & eSC320 Applicable Software : eSA/eSB/eSC IDE