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    RUTTONSHA 12 FM 120 METAL DIODE Search Results

    RUTTONSHA 12 FM 120 METAL DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK095A65Z5 Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 650 V, 29 A, 0.095 Ω@10 V, High-speed diode, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK7R4A15Q5 Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 57 A, 0.0074 Ω@10 V, High-speed diode, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK095V65Z5 Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 650 V, 28 A, 0.095 Ω@10 V, High-speed diode, DFN 8×8 Visit Toshiba Electronic Devices & Storage Corporation
    TK9R7A15Q5 Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 49 A, 0.0097 Ω@10 V, High-speed diode, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK095E65Z5 Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 650 V, 29 A, 0.095 Ω@10 V, High-speed diode, TO-220 Visit Toshiba Electronic Devices & Storage Corporation

    RUTTONSHA 12 FM 120 METAL DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    RUTTONSHA all diodes

    Abstract: RUTTONSHA 12 FM 120 metal diode IGD 001 RUTTONSHA 12 FM 120 all diodes RUTTONSHA 850C 1785a HIGH VOLTAGE THYRISTOR RUTTONSHA 16 F M 120
    Text: Ruttonsha International Rectifier Ltd. POWER MODULES RUTTONSHA IRK.26, .41, .56, .71, .91 SERIES High Voltage Thyristor/Diode and Thyristor/Thyristor FEATURES Y Electrically isolated base plate. Y 3500 V RMS isolating voltage. Y Simplified mechanical designs, rapid assembly.


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    RUTTONSHA all diodes datasheet

    Abstract: RUTTONSHA all diodes RUTTONSHA ruttonsha power module IRK.56 RUTTONSHA 12 FM 120 all diodes RUTTONSHA 12 FM 120 metal diode RUTTONSHA diodes ruttonsha R-700 RUTTONSHA 16 F M 120
    Text: Ruttonsha International Rectifier Ltd. POWER MODULES RUTTONSHA IRK.26, .41, .56, .71, .91 SERIES High Voltage Thyristor/Diode and Thyristor/Thyristor FEATURES v Electrically isolated base plate. v 3500 V RMS isolating voltage. v Simplified mechanical designs, rapid assembly.


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    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


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