Untitled
Abstract: No abstract text available
Text: FDB070AN06A0 / FDP070AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 7mΩ Features Applications • r DS ON = 6.1mΩ (Typ.), V GS = 10V, ID = 80A • Motor Load Control • Qg(tot) = 51nC (Typ.), VGS = 10V • DC-DC converters and Off-line UPS • Low Miller Charge
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FDB070AN06A0
FDP070AN06A0
O-220AB
O-263AB
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AN9321
Abstract: AN9322 HUF76113DK8 HUF76113DK8T MS-012AA TB334
Text: HUF76113DK8 Data Sheet December 2001 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
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HUF76113DK8
AN9321
AN9322
HUF76113DK8
HUF76113DK8T
MS-012AA
TB334
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FQP45N03L
Abstract: FQP45N03
Text: FQP45N03L N-Channel Logic Level PWM Optimized Power MOSFET General Description Features This device employs a new advanced MOSFET technology and features low gate charge while maintaining low onresistance. • Fast switching Optimized for switching applications, this device improves
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FQP45N03L
1450pF
O-220AB
FQP45N03L
FQP45N03
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75631P
Abstract: AN9321 HUFA75631P3 HUFA75631S3ST TB334
Text: HUFA75631P3, HUFA75631S3ST Data Sheet November 2000 File Number 4958 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs Title UFA 631 Packaging JEDEC TO-220AB SOURCE DRAIN GATE UFA 631 ST bjec 3A, 0V, 40 m, ann JEDEC TO-263AB DRAIN FLANGE) GATE SOURCE
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HUFA75631P3,
HUFA75631S3ST
O-220AB
O-263AB
HUFA75631P3
75631P
AN9321
HUFA75631P3
HUFA75631S3ST
TB334
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PDF
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ITF86182SK8T
Abstract: MS-012AA TB370
Text: ITF86182SK8T Data Sheet 11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH File Number 4797.2 Features • Ultra Low On-Resistance - rDS(ON) = 0.0115Ω, VGS = −10V - rDS(ON) = 0.016Ω, VGS = −4.5V
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ITF86182SK8T
MS-012AA)
ITF86182SK8T
MS-012AA
TB370
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7n10l
Abstract: 7n10le RFD7N10LESM AN7254 AN7260 RFD7N10LE RFD7N10LESM9A TB334
Text: RFD7N10LE, RFD7N10LESM Data Sheet Title FD7 0L, D7 0LS bt A, 0V, 00 m, an, gic vel, wer OSTs utho October 1999 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs Features These N-Channel power MOSFETs are manufactured using a modern process. This process, which uses feature sizes
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RFD7N10LE,
RFD7N10LESM
7n10l
7n10le
RFD7N10LESM
AN7254
AN7260
RFD7N10LE
RFD7N10LESM9A
TB334
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76639p
Abstract: HUF76639P3 HUF76639S3S HUF76639S3ST TB334 92e2
Text: HUF76639P3, HUF76639S3S Data Sheet November 1999 File Number 4694.3 50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 39P Packaging JEDEC TO-220AB GATE SOURCE DRAIN FLANGE HUF76639P3 HUF76639S3S D rpor on, A, 0V, 27 m, ann gic
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HUF76639P3,
HUF76639S3S
O-220AB
HUF76639P3
76639p
HUF76639P3
HUF76639S3S
HUF76639S3ST
TB334
92e2
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AN9321
Abstract: HUFA76413D3 HUFA76413D3S HUFA76413D3ST TB334
Text: HUFA76413D3, HUFA76413D3S Data Sheet November 2000 File Number 4975 20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-251AA DRAIN FLANGE JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE HUFA76413D3S HUFA76413D3
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HUFA76413D3,
HUFA76413D3S
O-251AA
O-252AA
HUFA76413D3
AN9321
HUFA76413D3
HUFA76413D3S
HUFA76413D3ST
TB334
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PDF
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AN9321
Abstract: HUFA75823D3 HUFA75823D3S HUFA75823D3ST TB334 27e5
Text: HUFA75823D3, HUFA75823D3S Data Sheet November 2000 File Number 4965 14A, 150V, 0.150 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUFA75823D3S HUFA75823D3 Features
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HUFA75823D3,
HUFA75823D3S
O-251AA
O-252AA
HUFA75823D3
75823D
AN9321
HUFA75823D3
HUFA75823D3S
HUFA75823D3ST
TB334
27e5
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AN7254
Abstract: AN9321 AN9322 MS-012AA RF1K49154 RF1K4915496 TB334
Text: RF1K49154 Data Sheet October 1999 2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET Power MOSFET File Number 4143.3 Features • 2A, 60V This Dual N-Channel power MOSFET is manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI
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RF1K49154
AN7254
AN9321
AN9322
MS-012AA
RF1K49154
RF1K4915496
TB334
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HUF76445P3
Abstract: HUF76445S3S HUF76445S3ST TB334
Text: HUF76445P3, HUF76445S3S Data Sheet October 1999 File Number 4676.3 75A, 60V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 45P Packaging JEDEC TO-220AB GATE SOURCE DRAIN FLANGE HUF76445P3 HUF76445S3S D rpor on, ann gic vel raF wer
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HUF76445P3,
HUF76445S3S
O-220AB
HUF76445P3
HUF76445P3
HUF76445S3S
HUF76445S3ST
TB334
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75307
Abstract: 75307d transistor 75307D HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TA75307 TB334
Text: HUF75307P3, HUF75307D3, HUF75307D3S Data Sheet June 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUF75307P3,
HUF75307D3,
HUF75307D3S
75307
75307d
transistor 75307D
HUF75307D3
HUF75307D3S
HUF75307D3ST
HUF75307P3
TA75307
TB334
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75337
Abstract: 75337P HUFA75337G3 HUFA75337P3 HUFA75337S3S HUFA75337S3ST TB334
Text: HUFA75337G3, HUFA75337P3, HUFA75337S3S Data Sheet November 2000 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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HUFA75337G3,
HUFA75337P3,
HUFA75337S3S
75337
75337P
HUFA75337G3
HUFA75337P3
HUFA75337S3S
HUFA75337S3ST
TB334
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75307
Abstract: 75307d transistor 75307D HUFA75307D3 HUFA75307D3S HUFA75307D3ST HUFA75307P3 TA75307 TB334 UFA7
Text: HUFA75307P3, HUFA75307D3, HUFA75307D3S Data Sheet November 2000 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs Title UFA7 07P3, UFA7 07D3, UFA7 07D3 These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology
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HUFA75307P3,
HUFA75307D3,
HUFA75307D3S
75307
75307d
transistor 75307D
HUFA75307D3
HUFA75307D3S
HUFA75307D3ST
HUFA75307P3
TA75307
TB334
UFA7
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59E-1
Abstract: AN7254 AN7260 AN9321 AN9322 HUF75309T3ST TB334 TB337
Text: HUF75309T3ST Data Sheet June 1999 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET File Number 4377.3 Features • 3A, 55V This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
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HUF75309T3ST
59E-1
AN7254
AN7260
AN9321
AN9322
HUF75309T3ST
TB334
TB337
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76633s
Abstract: 76633p AN9321 AN9322 HUF76633P3 HUF76633S3S HUF76633S3ST TB334 mosfet 407
Text: HUF76633P3, HUF76633S3S Data Sheet October 1999 File Number 4693.3 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUF76633P3 HUF76633S3S
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HUF76633P3,
HUF76633S3S
O-220AB
O-263AB
HUF76633P3
76633s
76633p
AN9321
AN9322
HUF76633P3
HUF76633S3S
HUF76633S3ST
TB334
mosfet 407
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76629D
Abstract: AN9321 HUF76629D3 HUF76629D3S HUF76629D3ST TB334 4692
Text: HUF76629D3, HUF76629D3S Data Sheet October 1999 File Number 4692.3 20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 29D Packaging JEDEC TO-251AA 0V, 54 m, A, GATE SOURCE DRAIN FLANGE HUF76629D3 HUF76629D3S wer OSF ) utho eyw
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HUF76629D3,
HUF76629D3S
O-251AA
HUF76629D3
76629D
AN9321
HUF76629D3
HUF76629D3S
HUF76629D3ST
TB334
4692
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PDF
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AN9321
Abstract: HUFA75831SK8 HUFA75831SK8T MS-012AA TB370
Text: HUFA75831SK8 Data Sheet November 2000 File Number 4967 3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.095Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE® and SABER
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HUFA75831SK8
MS-012AA
HUFA75831Slopment.
AN9321
HUFA75831SK8
HUFA75831SK8T
MS-012AA
TB370
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76629D
Abstract: AN9321 HUFA76629D3 HUFA76629D3S HUFA76629D3ST TB334
Text: HUFA76629D3, HUFA76629D3S Data Sheet November 2000 File Number 4990 20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUFA76629D3 HUFA76629D3S
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HUFA76629D3,
HUFA76629D3S
O-251AA
O-252AA
HUFA76629D3
76629D
AN9321
HUFA76629D3
HUFA76629D3S
HUFA76629D3ST
TB334
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PDF
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76443P
Abstract: AN7254 AN9321 AN9322 HUF76443P3 HUF76443S3S HUF76443S3ST TB334
Text: HUF76443P3, HUF76443S3S Data Sheet October 1999 File Number 4784 75A, 60V, 0.0095 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUF76443P3 HUF76443S3S
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HUF76443P3,
HUF76443S3S
O-220AB
O-263AB
HUF76443P3
76443P
AN7254
AN9321
AN9322
HUF76443P3
HUF76443S3S
HUF76443S3ST
TB334
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7n10l
Abstract: RFD7N10LESM 7n10le AN7254 AN7260 RFD7N10LE RFD7N10LESM9A TB334
Text: RFD7N10LE, RFD7N10LESM Data Sheet 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs These N-Channel power MOSFETs are manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum
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RFD7N10LE,
RFD7N10LESM
7n10l
RFD7N10LESM
7n10le
AN7254
AN7260
RFD7N10LE
RFD7N10LESM9A
TB334
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HUF76107P3
Abstract: AN7260 AN7254 AN9321 AN9322 TB334 TC298
Text: HUF76107P3 Data Sheet December 2001 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features • Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology
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HUF76107P3
HUF76107P3
AN7260
AN7254
AN9321
AN9322
TB334
TC298
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PDF
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rs808
Abstract: HUF76112SK8T AN7254 AN7260 AN9321 AN9322 HUF76112SK8 MS-012AA TB334
Text: HUF76112SK8 Data Sheet December 2001 7.5A, 30V, 0.026 Ohm, N-Channel, Logic Level Power MOSFET The HUF76112SK8 is an Application-Specific MOSFET optimized for switching when used as the upper switch in synchronous buck applications. The low gate charge and low
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HUF76112SK8
HUF76112SK8
725pF
rs808
HUF76112SK8T
AN7254
AN7260
AN9321
AN9322
MS-012AA
TB334
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PDF
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76645S
Abstract: 76645P HUF76645P3 HUF76645S3S HUF76645S3ST TB334
Text: HUF76645P3, HUF76645S3S Data Sheet August 1999 File Number 4716.2 75A, 100V, 0.015 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 45P Packaging JEDEC TO-220AB GATE SOURCE DRAIN FLANGE HUF76645P3 HUF76645S3S Features • Ultra Low On-Resistance
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HUF76645P3,
HUF76645S3S
O-220AB
HUF76645P3
76645S
76645P
HUF76645P3
HUF76645S3S
HUF76645S3ST
TB334
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PDF
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