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    RS-170 IMPEDANCE MATCH Search Results

    RS-170 IMPEDANCE MATCH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD7S019-15RSVR Texas Instruments 7-Channel Integrated ESD Solution for VGA Port With Integrated Level Shifter and Matching Impedance 16-UQFN -40 to 85 Visit Texas Instruments Buy
    TPD7S019-15DBQR Texas Instruments 7-Channel Integrated ESD Solution for VGA Port With Integrated Level Shifter and Matching Impedance 16-SSOP -40 to 85 Visit Texas Instruments Buy
    26LS30/BEA Rochester Electronics LLC Line Driver, 1 Func, 4 Driver, CDIP16, CERAMIC, DIP-16 Visit Rochester Electronics LLC Buy
    DS96174N Rochester Electronics LLC Line Driver, 2 Func, 2 Driver, BIPolar, PDIP16, PLASTIC, DIP-16 Visit Rochester Electronics LLC Buy
    AM26LS30PC Rochester Electronics LLC Line Driver, 4 Func, 4 Driver, BIPolar, PDIP16, PLASTIC, DIP-16 Visit Rochester Electronics LLC Buy

    RS-170 IMPEDANCE MATCH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MPN3002

    Abstract: 1N5719 1N5767 MPN3001
    Text: Glass Package PIN Diodes for RF Switching and Attenuating A15 PACKAGE Description: Features: The switching diodes are designed for low power, general-purpose switch and switching applications up to 2 GHz. The attenuator diodes have guaranteed R S slopes making them ideal for impedance matched attenuators


    Original     		PDF MIL-PRF-19500 A17007 MPN3002 1N5719 1N5767 MPN3001

    AN0015

    Abstract: pi RESISTOR NETWORK NBB-300 RFMD nbb 402 RP Lchoke
    Text: AN0015 15 AN0015 Design of “PI” and “T” Network Attenuators for Inter-Stage Buffering Design of “PI” and “T” Network Attenuators for Inter-Stage Buffering The NBB and NDA-series matched amplifiers may be cascaded in a driver chain or used adjacent to other components


    Original     		PDF AN0015 AN0015 pi RESISTOR NETWORK NBB-300 RFMD nbb 402 RP Lchoke

    N0044

    Abstract: n003620 Model 52K N0008 N0034 N0018
    Text: SPICE Model Tutorial of the RSLIC18 AC Loop Application Note October 1998 AN9824 Author: Edward Berrios Introduction providing superb matching, temperature stability and gain accuracies. The AC loop of the RSLIC18 refers to the voice band path which provides full duplex


    Original     		PDF RSLIC18TM AN9824 RSLIC18 N0044 n003620 Model 52K N0008 N0034 N0018

    AN9824

    Abstract: n003620 9824 Model 52K 400Z HC55180 HC55181 HC55182 HC55183 HC55184
    Text: SPICE Model Tutorial of the RSLIC18 AC Loop Application Note October 1998 AN9824 Author: Edward Berrios Introduction providing superb matching, temperature stability and gain accuracies. The AC loop of the RSLIC18 refers to the voice band path which provides full duplex


    Original     		PDF RSLIC18TM AN9824 RSLIC18 RSLIC18 AN9824 n003620 9824 Model 52K 400Z HC55180 HC55181 HC55182 HC55183 HC55184

    N0044

    Abstract: AN9824 400Z HC55180 HC55181 HC55182 HC55183 HC55184 4.00z N0033 A
    Text: SPICE Model Tutorial of the RSLIC18 AC Loop TM Application Note October 1998 AN9824 providing superb matching, temperature stability and gain accuracies. The AC loop of the RSLIC18 refers to the voice band path which provides full duplex signal communication and


    Original     		PDF RSLIC18TM AN9824 RSLIC18 RSLIC18 N0044 AN9824 400Z HC55180 HC55181 HC55182 HC55183 HC55184 4.00z N0033 A

    cw DWDM laser 1610

    Abstract: Samsung Electronics Company DFB DL47B3A GR-468-CORE connector SAMSUNG 30 PIN SAMSUNG DL47B3A
    Text: 1 Technical Data Sheet August 2001 OPTOELECTRONICS DIVISION DL47B3A 2.5 Gbps 1550 nm Direct Modulation DFB Laser Module Features ¾ High-performance MQW DFB Laser ¾ Built-in TEC, Thermistor and Monitor PD ¾ 25Ω Input Impedance Matching ¾ Built-in Optical Isolator


    Original     		PDF DL47B3A 14-pin GR-468-CORE OC-48/STM-16 cw DWDM laser 1610 Samsung Electronics Company DFB DL47B3A GR-468-CORE connector SAMSUNG 30 PIN SAMSUNG DL47B3A

    transistor t2

    Abstract: 61 TRANSISTOR Q62702-C2158 transistor marking T2 marking BCV Q62702-C2159 Q62702-C2160 Q62702-C2155 transistor T1 Q62702-C2157
    Text: NPN Silicon Double Transistors BCV 61 Preliminary Data To be used as a current mirror ● Good thermal coupling and VBE matching ● High current gain ● Low emitter-saturation voltage ● Type Marking Ordering Code tape and reel BCV 61 A BCV 61 B BCV 61 C


    Original     		PDF Q62702-C2155 Q62702-C2156 Q62702-C2157 OT-143 transistor t2 61 TRANSISTOR Q62702-C2158 transistor marking T2 marking BCV Q62702-C2159 Q62702-C2160 Q62702-C2155 transistor T1 Q62702-C2157

    JC JB jt

    Abstract: CP-24-7 AD833
    Text: FEATURES Low noise Input voltage noise: 0.85 nV/√Hz Current noise: 2.0 pA/√Hz Excellent ac specifications 200 MHz bandwidth @ G = 4 271 V/ s slew rate Selectable Gain: x4, ×8, ×12, ×16 Active input impedance matching Single-ended input, differential output


    Original     		PDF AD8432 AD8432 24-Lead CP-24-7) AD8432ACPZ1 AD8432ACPZ-R71 AD8432ACPZ-RL1 AD8432ACPZ-WP1 AD8432-EVALZ1 JC JB jt CP-24-7 AD833

    DL47B3A

    Abstract: GR-468-CORE dfb 10mw cw DWDM laser 1610
    Text: 1 Technical Data Sheet February 2002 FIBEROPTICS DIVISION DL47B3A 2.5 Gbps 1550 nm Direct Modulation DFB Laser Module Features ¾ High-performance MQW DFB Laser ¾ Built-in TEC, Thermistor and Monitor PD ¾ 25Ω Input Impedance Matching ¾ Built-in Optical Isolator


    Original     		PDF DL47B3A 14-pin GR-468-CORE OC-48/STM-16 DL47B3A GR-468-CORE dfb 10mw cw DWDM laser 1610

    CP-24-7

    Abstract: PRB-4
    Text: FEATURES Low noise Input voltage noise: 0.85 nV/√Hz Current noise: 2.0 pA/√Hz High speed 200 MHz bandwidth G = 12.04 dB 295 V/µs slew rate Selectable gain G = 12.04 dB (x4) G = 18.06 dB (×8) G = 21.58 dB (×12) G = 24.08 dB (×16) Active input impedance matching


    Original     		PDF AD8432 AD8432ACPZ-R7 AD8432ACPZ-RL AD8432ACPZ-WP AD8432-EVALZ 24-Lead 4-12-2012-A CP-24-7 PRB-4

    Untitled

    Abstract: No abstract text available
    Text: FEATURES Low noise Input voltage noise: 0.85 nV/√Hz Current noise: 2.0 pA/√Hz High speed 200 MHz bandwidth G = 12.04 dB 295 V/µs slew rate Selectable gain G = 12.04 dB (x4) G = 18.06 dB (×8) G = 21.58 dB (×12) G = 24.08 dB (×16) Active input impedance matching


    Original     		PDF AD8432 AD8432ACPZ-R7 AD8432ACPZ-RL AD8432ACPZ-WP AD8432-EVALZ 24-Lead CP-24-7

    Untitled

    Abstract: No abstract text available
    Text: Electrical Specifications Subject to Change LTC6401-20 1.3GHz Low Noise, Low Distortion Differential ADC Driver for 140MHz IF FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION 1.3GHz –3dB Bandwidth Fixed Gain of 10V/V 20dB 40.8dBm OIP3 at 140MHz


    Original     		PDF LTC6401-20 140MHz 140MHz. 16-bit LTC64 TCM4-19 LTC6401CUD-20 LT1993-2/LT1993-4/ LT1993-10

    7025 vacuum tube

    Abstract: 7119 tube 33566 nt 9731 xl 1225 AN267 xl 1225 transistor transistor 9747 34018 9033 transistor
    Text: Order this document by AN267/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN267 MATCHING NETWORK DESIGNS WITH COMPUTER SOLUTIONS Prepared by: Frank Davis INTRODUCTION One of the problems facing the circuit design engineer is the design of high-frequency matching networks. Careful


    Original     		PDF AN267/D AN267 7025 vacuum tube 7119 tube 33566 nt 9731 xl 1225 AN267 xl 1225 transistor transistor 9747 34018 9033 transistor

    AN267

    Abstract: motorola transistor 7439 57075 xl 1225 transistor Silver mica capacitor xl 1225 32282 8233 vacuum tube transistor 7746
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN267/D SEMICONDUCTOR APPLICATION NOTE AN267 Matching Network Designs with Computer Solutions Prepared by: Frank Davis Freescale Semiconductor, Inc. INTRODUCTION One of the problems facing the circuit design engineer


    Original     		PDF AN267/D AN267 AN267 motorola transistor 7439 57075 xl 1225 transistor Silver mica capacitor xl 1225 32282 8233 vacuum tube transistor 7746

    ADG201

    Abstract: ADG444BN ADG441 ADG441BN ADG442 ADG444 DG211 ADG202 ADG211
    Text: a FEATURES 44 V Supply Maximum Ratings VSS to VDD Analog Signal Range Low On Resistance < 70 Ω Low ∆RON (9 Ω max) Low RON Match (3 Ω max) Low Power Dissipation Fast Switching Times tON < 110 ns tOFF < 60 ns Low Leakage Currents ( 3 nA max) Low Charge Injection (6 pC max)


    Original     		PDF DG201A/ADG201A, DG202A/ADG202A, DG211/ADG211A DG441/DG442/DG444 ADG441/ADG442/ADG444 ADG441BN ADG441BR ADG441TQ ADG442BN ADG201 ADG444BN ADG441 ADG441BN ADG442 ADG444 DG211 ADG202 ADG211

    Untitled

    Abstract: No abstract text available
    Text: a FEATURES 44 V Supply Maximum Ratings VSS to VDD Analog Signal Range Low On Resistance < 70 Ω Low ∆RON (9 Ω max) Low RON Match (3 Ω max) Low Power Dissipation Fast Switching Times tON < 110 ns tOFF < 60 ns Low Leakage Currents ( 3 nA max) Low Charge Injection (6 pC max)


    Original     		PDF DG201A/ADG201A, DG202A/ADG202A, DG211/ADG211A DG441/DG442/DG444 ADG441/ADG442/ADG444 ADG441 ADG444 C1890

    ADG1436YRUZ

    Abstract: No abstract text available
    Text: 1.5 Ω On Resistance, ±15 V/12 V/±5 V, iCMOS, Dual SPDT Switch ADG1436 FEATURES FUNCTIONAL BLOCK DIAGRAMS 1.5 Ω on resistance 0.3 Ω on-resistance flatness 0.1 Ω on-resistance match between channels Continuous current per channel LFCSP package: up to 400 mA


    Original     		PDF ADG1436 16-lead ADG1436YRUZ ADG1436YRUZ-REEL71 ADG1436YCPZ-REEL1 ADG1436YCPZ-REEL71

    ADG1436YRUZ-REEL7

    Abstract: MO-220-VGGC ADG1436 ADG1436YRUZ SPDT relay 12v
    Text: 1.5 Ω On Resistance, ±15 V/12 V/±5 V, iCMOS, Dual SPDT Switch ADG1436 FEATURES FUNCTIONAL BLOCK DIAGRAMS 1.5 Ω on resistance 0.3 Ω on-resistance flatness 0.1 Ω on-resistance match between channels Continuous current per channel LFCSP package: up to 400 mA


    Original     		PDF ADG1436 16-lead CP-16-13) ADG1436YRUZ ADG1436YRUZ-REEL71 ADG1436YCPZ-REEL1 ADG1436YCPZ-REEL71 ADG1436YRUZ-REEL7 MO-220-VGGC ADG1436 SPDT relay 12v

    Untitled

    Abstract: No abstract text available
    Text: 1.5 Ω On Resistance, ±15 V/12 V/±5 V, iCMOS, Dual SPDT Switch ADG1436 FUNCTIONAL BLOCK DIAGRAMS FEATURES 1.5 Ω on resistance 0.3 Ω on-resistance flatness 0.1 Ω on-resistance match between channels Continuous current per channel LFCSP package: up to 400 mA


    Original     		PDF ADG1436 16-lead CP-16-13) ADG1436YRUZ ADG1436YRUZ-REEL71 ADG1436YCPZ-REEL1 ADG1436YCPZ-REEL71

    F0311018S

    Abstract: Frequency Generator 1GHz Picosecond Pulse Labs amplifier picosecond 2100
    Text: SUMITOMO ELECTRIC INDUSTRIES, LTD. 00.02.28 ♦ Features F0311018S 1 GHz Bandwidth • +5 V single power supply • 19 dB typical gain • 1.2 GHz typical 3 dB-cutoff-frequency • On-chip matching to 50 Ω • 40 mA typical operating current • Low-cost 8-lead SOP package


    Original     		PDF F0311018S F0311018S Frequency Generator 1GHz Picosecond Pulse Labs amplifier picosecond 2100

    Adg441

    Abstract: No abstract text available
    Text: a FEATURES 44 V Supply Maximum Ratings VSS to VDD Analog Signal Range Low On Resistance < 70 Ω Low ∆RON (9 Ω max) Low RON Match (3 Ω max) Low Power Dissipation Fast Switching Times tON < 110 ns tOFF < 60 ns Low Leakage Currents ( 3 nA max) Low Charge Injection (6 pC max)


    Original     		PDF DG201A/ADG201A, DG202A/ADG202A, DG211/ADG211A DG441/DG442/DG444 ADG441/ADG442/ADG444 ADG441 ADG444 pdf/20010521/11may2001/html/ADG441

    r16a diode

    Abstract: adg444br ADG441BR ADG441TCHIPS
    Text: a FEATURES 44 V Supply Maximum Ratings VSS to VDD Analog Signal Range Low On Resistance < 70 Ω Low ∆RON (9 Ω max) Low RON Match (3 Ω max) Low Power Dissipation Fast Switching Times tON < 110 ns tOFF < 60 ns Low Leakage Currents ( 3 nA max) Low Charge Injection (6 pC max)


    Original     		PDF DG201A/ADG201A, DG202A/ADG202A, DG211/ADG211A DG441/DG442/DG444 ADG441/ADG442/ADG444 ADG441 ADG444 images/ADG441 r16a diode adg444br ADG441BR ADG441TCHIPS

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F K 38V 2228 1 2 .2 — 1 2 .8 G H z BAND 6 W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING U n i t : m il l i m e t e r s in c h e s ' The M G F K 3 8 V 2 2 2 8 is an internally impedance matched GaAs power F E T especially designed fo r use in 12 .2 ~ 12.8


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon Double Transistors BCV61 • To be used as a current mirror • Good thermal coupling and V be matching • High current gain • Low emitter-saturation voltage Type Marking Ordering Code tape and reel BCV 61 A BCV61 B BCV 61 C 1Js 1Ks


    OCR Scan     		PDF BCV61 BCV61 Q62702-C2155 Q62702-C2156 Q62702-C2157 OT-143 fi235b05 fl235b05