Untitled
Abstract: No abstract text available
Text: f t Edition Sept. 27, 1995 62514153AI 4bfi27 11 OOOSbbM 50b • , ITT S e m ico n d u cto rs I * I " I " TPU 3041 ADVANCE INFORMATION Contents Page Section Title 3 1. Introduction 3 4 1.1. 1.2. Technical Code Change from TC19 to TC22 Software Incompatibility between Technical Codes 19 and 22
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2514153A
4bfi27
00G5bb5
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moc3041 application note
Abstract: MOC3042 AN moc3041 MOTOROLA MOC3041 motorola triac MOC3042 motorola triac driver VDE0160 VDE0832 VDE0833
Text: MOTOROLA mm SE M IC O N D U C TO R TECHNICAL DATA M O C 3041 M O C 3042 M O C 3043 6-P in D IP O p to is o la to rs T ria c D river O u tp u t These d evices co n s is t o f g a lliu m arsen id e in fra re d e m ittin g d io d e s o p tic a lly c o u p le d to
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30A-02
moc3041 application note
MOC3042 AN
moc3041
MOTOROLA MOC3041
motorola triac
MOC3042
motorola triac driver
VDE0160
VDE0832
VDE0833
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Intech Advanced Analog 3041
Abstract: CA 3041 Intech Advanced Analog
Text: ADVANCED ANALOG A Division of intech 3041 MONITOR ALARM FEATURES • Directly Drives External Speaker With Frequency Adjustable Tone • Steady TTL Compatible Output, Capable of Driving LED or Lamp • Accurate Reference Voltage • Large Supply Voltage Range, 4.5 to 18
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Intech Advanced Analog 3041
Abstract: clap switch LED monitor circuit diagram Intech Advanced Analog
Text: ADVANCED ANALOG A Division of intech 3041 MONITOR ALARM FEATURES • Directly Drives External Speaker With Frequency Adjustable Tone • Steady TTL Compatible Output, Capable of Driving LED or Lamp • Accurate Reference Voltage DESCRIPTION The Intech 3041 is a dua! input, m o n o lith ic integrated,
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rf1001
Abstract: R3003 R3002 RE502 RF-1001 RE501 I401 MAX4144 MAX4146 kf 203
Text: * MAX4144 FAMILY MACROMODEL * -* FEATURES: * 130MHz -3dB Bandwidth MAX4144 * 70MHz -3dB Bandwidth (MAX4146) * 11mA Typical Supply Current * 100mA Typical Output Current Drive * 2V/V Fixed Gain (MAX4144) * External Gain Selection (MAX4146)
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MAX4144
130MHz
MAX4144)
70MHz
MAX4146)
100mA
000V/uS
14-Pin
rf1001
R3003
R3002
RE502
RF-1001
RE501
I401
MAX4146
kf 203
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ph-200 diode
Abstract: 5082-3040 HP an-922 5082-3040 equivalent 5082-3041 LM 3041
Text: H E W L E T T - P A C K A R D / CflPNTS blE D • 4 4 4 7 5 Ö 4 G D G cì7E3 ^ bl ■ H P A W hp% m U r im H E W LE T T P a c k a rd Stripline PIN Diode Switches/ Attenuators 5082-3040 5082-3041 5082-3340 Features 2 16 0 085 f f ï (0 075) • Low Cost to Use
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MM47564
ph-200 diode
5082-3040
HP an-922
5082-3040 equivalent
5082-3041
LM 3041
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2N5660
Abstract: 2N5662
Text: POWER TRANSISTORS JAN, JAN, JAN, JAN, 2 Amp, 300V, Planar NPN FEATURES • Meets MIL-S-19500/454 • Collector-Base Voltage: up to 400V • D.C. Collector Current: 5A • Peak Collector Current: 10A • Fast Switching JANTX, JANTX, JANTX, JANTX, & & & & JANTXV
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2N5660
2N5661
2N5662
2N5663
MIL-S-19500/454
2N56B1
2N96S3
2N5660,
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2N5664
Abstract: cc 3053
Text: POWER TRANSISTORS JAN, JAN, JAN, JAN, 5 Amp, 300V, Planar NPN JANTX, JANTX, JANTX, JANTX, FEATURES • Meets MIL-S-19500/455 • Collector-Base Voltage: up to 400V • D.C. Collector Current: 5A • Peak Collector Current: 10A • Fast Switching JA N , JA N T X ,
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2N5664
2N5665
2N5666
2N5667
MIL-S-19500/455
cc 3053
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Untitled
Abstract: No abstract text available
Text: o 1.41 REF. NOTES: 1. FOR USE WITH RG-55/U & RG-58/U CABLE. 2. FOR CABLING INSTRUCTIONS SEE C P - 1014. 3. INTERFACE PER MIL-STD-348, FIG. 304-1. 4. MATERIALS: INSULATOR: TEFLON, ASTM-D-1457 GASKETS: SILICONE RUBBER. Z Z -R -7 6 5 C-RING & OUTER CONTACT: PHOSPHOR BRONZE, Q Q -B -750
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RG-55/U
RG-58/U
MIL-STD-348,
ASTM-D-1457
ASTM-B16
MIL-G-45204
-S-365
WJM1684
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MS-90156
Abstract: MS90156-27C
Text: RS 138-3659 SD REVISIONS CN 4081 A J.G. 03/30/66 1 CN ro 10615 A WLA 12/16/71 o CN 17241 C JHP 05/05/77 CN 27408 D SD 09/25/85 CN 38111 C REDRAWN TML 10/24/00 12 5 / 8 -24 UNEF-2 THREAD STAMP: 91836 MS90156-27C UG-27C/U YRWK DATE CODE .03 D. REF. (3 HOLES)
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MS90156-27C
UG-27C/U
MIL-STD-348,
ASTM-D-4894
ASTM-B-196
ASTM-B-103
ASTM-B16
-S-365
MS-90156
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501B- 8 P
Abstract: 501B 8 P
Text: C o u p le rs QUICK REFERENCE GUIDE FREQUENCY RANGE GHz} COUPLERS FREQUENCY RANGE (GHz CONNECTOR 3 .7-83 CONNECTOR MODEL NO. PAGE NO. 2.9 m m 4018 111 4-8 1.7-26.5 SM A 4227 115 4-8 6-26.5 SM A 4247 115 18-26.5 SM A 4017C 113, 115 0.5 -1 8 SM A 4226 119
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4017C
4014C
3043B
4013C
27002SC
27005SC
3044B
501B- 8 P
501B 8 P
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4N24 opto
Abstract: 3041 OPTO B1056
Text: MOTOROLA SC {DI ODE S/ OP TO} DE |h3t,72SS GD7747D 3 Order this data sheet by 4N22A/D MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA 4N22,A 4N23,A 4N24,A Hermetic O ptoisolator T h e 4N 22,A , 4 N 2 3 ,A and 4 N 2 4 ,A are J E D E C registered optically co u p led iso la to rs each
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GD7747D
4N22A/D
MK145BP,
4N24 opto
3041 OPTO
B1056
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2N1016B
Abstract: 2N1016D 2N1016C transistor kc 2026 102A MC 3041 2N1016 kc 2026
Text: MIL SP E C S IC|ODDOiaS OODObTl 4 |~ M IL-S-19500/102A 29 December 1966 ' SUPERSEDING M IL -S-19500/102 NAVY 19 July 1962 (See 6 .2) MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTORS, NPN, SILICON, HIGH-POWER TYPES 2N1016B, 2N1016C, AND 2N1016D This specification is mandatory for u se by a ll Depart
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MIL-S-19500/102A
MIL-S-19500/102
2N1016B,
2N1016C,
2N1016D
2N1016B
2N1016C
2N1016D
MIL-S-19500,
transistor kc 2026
102A
MC 3041
2N1016
kc 2026
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diode cc 3053
Abstract: cc 3053 diode 2N6277 equivalent
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 3 September 2013. MIL-PRF-19500/514D 3 June 2013 SUPERSEDING MIL-PRF-19500/514C 20 November 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER,
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MIL-PRF-19500/514D
MIL-PRF-19500/514C
2N6274
2N6277,
MIL-PRF-19500.
diode cc 3053
cc 3053 diode
2N6277 equivalent
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Untitled
Abstract: No abstract text available
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 September 1997 INCH-POUND MIL-PRF-19500/540B 15 June 1997 SUPERSEDING MIL-S-19500/540A 19 August 1994 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, PNP SILICON, POWER
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MIL-PRF-19500/540B
MIL-S-19500/540A
2N6298,
2N6299
MIL-PRF-19500.
T0-66)
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2N6839
Abstract: No abstract text available
Text: HEWLETT-PACKARD i CMPNTS 2GE D □ 4447534 0G0SS3S 3 E3 *31 H E W L E T T PACKARD 1:rJl 3 1 -2 -3 T'3 3-Ö S' L inear P ow er Transistors HXTR-3002 Chip Technical Data HXTR-3102, TX and TXV 2N6839 HXTR-3104, TX
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HXTR-3002
HXTR-3102,
2N6839
HXTR-3104,
1SalE12i
MIL-S-19500,
MIL-STD-750
2N6839
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Untitled
Abstract: No abstract text available
Text: What H E W L E T T * mLliM P A C K A R D PIN Diode Chips for Hybrid MIC Switches/Attenuators Technical Data 5082-0001 5082-0012 Features • Low Series Resistance 0.8 £2 Typical • Nitride Passivated Outline 01B 5082-0001 ALL OTHER CHIPS Description These PIN diode chips are silicon
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5082-0012
Abstract: hydrofluoric acid
Text: PIN Diode Chips for Hybrid MIC Switches/Attenuators Technical Data 5082-0001 5082-0012 Features • Low Series Resistance 0.8 Ω Typical • Nitride Passivated Outline 01B 5082-0001 ALL OTHER CHIPS D D X X Description These PIN diode chips are silicon dioxide or nitride passivated. The
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5965-8880E
5082-0012
hydrofluoric acid
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5082-0049
Abstract: 5082-0030
Text: H E W L E T T - P A C K A R D CMPNTS DE J~44M75flM D O O E T D T 3 | Tñ 4447584 HEWLETT-PACKARD» 58C 0 2 9 0 9 CMPNTS D T' o ? '/^ Whnl H E W L E T T m!/im P A C K A R D PIN DIODE CHIPS FOR HYBRID MIC SWITCHES/ATTENUATORS 5082-0001 5082-0012 5082-0025 5082-0030
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44M75flM
lon50
--20V
5082-0049
5082-0030
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5082-0001
Abstract: 5082-3041 equivalent
Text: PIN Diode Chips for Hybrid MIC Switches/Attenuators Technical Data 5082-0001 5082-0012 Features • Low Series Resistance 0.8 Ω Typical • Nitride Passivated Outline 01B 5082-0001 ALL OTHER CHIPS D D X X Description These PIN diode chips are silicon dioxide or nitride passivated. The
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5965-8880E
5082-0001
5082-3041 equivalent
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2N3866A JAN
Abstract: No abstract text available
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 18 September 2011. MIL-PRF-19500/398K 18 June 2011 SUPERSEDING MIL-PRF-19500/398J 26 January 2010 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-FREQUENCY,
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MIL-PRF-19500/398K
MIL-PRF-19500/398J
2N3866,
2N3866A,
2N3866UB,
2N3866AUB,
2N3866A JAN
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MPSW51
Abstract: MPSW51A 500IC
Text: MP$W51,A* M A X IM U M R A T IN G S Rating Symbol Value Unit Collector-Emitter Voltage MPSW51 M PSW 51A VCEO -3 0 -4 0 Vdc Collector-Base Voltage MPSW51 M PSW 51A VCBO -4 0 -5 0 Vdc Emitter-Base Voltage Ve b o -5.0 Vdc Collector Current — Continuous >C -1 0 0 0
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MPSW51
MPSW51A
MPSW51,
500IC
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diode cc 3053
Abstract: cc 3053 sd 431 transistor 2n3996 equivalent transistor tms 374c 2N3996 2N3997 2N3998 2N3999 MIL-PRF19500
Text: This is an advance copy of the dated document. The final document after review by the Defense Automated Printing Service may be slightly different in format. Actual technical content will be the same. The documentation and process conversion measures necessary to comply with this
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MIL-PRF-19500/374D
MIL-S-19500/374C
2N3996
2N3999,
diode cc 3053
cc 3053
sd 431 transistor
2n3996 equivalent transistor
tms 374c
2N3997
2N3998
2N3999
MIL-PRF19500
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2N3419
Abstract: No abstract text available
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 5 December 2013. MIL-PRF-19500/393L 5 September 2013 SUPERSEDING MIL-PRF-19500/393K 3 February 2012 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON POWER,
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MIL-PRF-19500/393L
MIL-PRF-19500/393K
2N3418,
2N3418S,
2N3418U4,
2N3419,
2N3419S,
2N3419U4,
2N3420,
2N3420S,
2N3419
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