RRH A2 Search Results

HS-65C262

Contextual Info: HARRIS SEMICONDUCTOR HS-65C262RH/RRH HS-65T262RRH Radiation Hardened 16Kx 1 CMOS RAM December 1992 Features Pinouts 20 PIN CERAMIC DIP CASE OUTLINE D8, CONFIGURATION 3 TOP VIEW • Radiation Hardened EPI-CMOS • Total Dose 2 x 10s RAD SI - Transient Upset > 5 x 108 RAD(Sl)/s

T12N

Abstract: 1256C A-04 DIN40040
Contextual Info: TELEFUNKEN ELECTRONIC filC » • i H S D M b OOObOSB 7 ■ AL66 7"- T12N T yp enrelhe/Typ e range T12N Elektrische Eigenschaften Electrical properties H öchstzulässige W erte U drmi U rrh Periodische Vorwärts- und repetitive peak forward off-state Rückwärts-Spitzensperrspannung

101-06A

Contextual Info: DIXYS Fast Recovery Epitaxial Diode FRED DSEI 2x101 V RRM — IFAVM - 600 V 2x 96 A 35 ns vr Preliminary data V rsm V rrh V V 600 600 _ w DSEI 2x 101-06A Symbol T est C o nd ition s U(RMS) Tyj — T VJM 1200 1300 A A TVJ = 150°C; t = 10 ms (50 Hz), sine

Contextual Info: f il H U U S E M I C O N D U C T O R A R R IS HS-65C262RH/RRH HS-65T262RRH Radiation Hardened 16K x 1 CMOS RAM December 1992 Pinouts Features • Radiation Hardened EPI-CMOS • Total Dose 2 x 10s RAD Sl • Transient Upset > 5 x 108 RAD(Siys - Latch-up Free > 1 x 101* RAD(Siys

SIEMENS BST

Abstract: SIEMENS BST P SIEMENS BST f SIEMENS BST P 4960 SIEMENS "bst e" SIEMENS BST F 05 SIEMENS BST P 4960 d SIEMENS BST G 03 60 SIEMENS BST 4486 BSTN44C80
Contextual Info: SIEMENS AKTIENGESELLSCHAF Type ^DRM ññD D ^TSM Í trms 25°C,10ms A ^RRH V A B St N 44 C 60 900 B StN 4 4 C 8 0 1 200 B StN 4 4 C 86 1 300 BSt N 47 C 60 900 B St N 47 C 66 1000 B St N 49 B 53 800 B St N 49 B 60 900 B S tN 6 1 1 3 200 B St N 6120 300 B St N 6126

V05 SMD CODE MARKING

Abstract: AG qd SMD smd marking code v05 md27c128 qml-38535 MD27C128-20 27C128 GDIP1-T28 27C128-25BXA 5962-8766105xx
Contextual Info: R E V IS IO N S LTR DATE YR-MO-DA D E S C R IP T IO N APPROVED A A dd e d A rrh e n iu s e q ua tion for u n b ia se d bake un d e r m argin test m ethod A, b a ck end m argin te st ste p C. C o rrected m ilitary part nu m be rs for de vice type s 01 and 02. T echn ica l ch a n g e s m ade to

Hitachi DSA00164

Contextual Info: HM5117805 Series 16 M EDO DRAM 2-Mword x 8-bit 2 k Refresh ADE-203-630D (Z) Rev. 4.0 Nov. 1997 Description The Hitachi HM5117805 is a CMOS dynamic RAM organized 2,097,152-word × 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended

ct rac 70

Contextual Info: 16 M EDO DRAM 2-Mword x 8-bit 2 k Refresh E0156H10 (Ver. 1.0) (Previous ADE-203-630D (Z) Jun. 27, 2001 LP EO Description HM5117805 Series The HM5117805 is a C MOS dynamic R AM orga nize d 2, 097,152-w ord × 8-bit. It employs the most adva nce d C MOS tec hnology for high per forma nce and low powe r. The HM5117805 off ers Extende d Da ta

630d

Abstract: HM5117805 HM5117805J-5 HM5117805J-6 HM5117805J-7 HM5117805LJ-5 HM5117805S-5 HM5117805S-6 HM5117805S-7 Hitachi DSA00504
Contextual Info: HM5117805 Series 16 M EDO DRAM 2-Mword x 8-bit 2 k Refresh ADE-203-630D (Z) Rev. 4.0 Nov. 1997 Description The Hitachi HM5117805 is a CMOS dynamic RAM organized 2,097,152-word × 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5117805 offers Extended

HM514405C

Abstract: HM514405CS-6 HM514405CS-7 HM514405CS-8 HM514405CTT-6 HM514405CTT-7 HM514405CTT-8 Hitachi DSA0015
Contextual Info: HM514405C Series 1,048,576-word x 4-bit Dynamic Random Access Memory Description The Hitachi HM514405C is a CMOS dynamic RAM organized 1,048,576-word × 4-bit. HM514405C has realized higher density, higher performance and various functions by employing 0.8 µm CMOS process

HM51W4405BS

Abstract: HM51W4405BS-6R HM51W4405BS-7 Hitachi DSA0015
Contextual Info: HM51W4405BS Series 1,048,576-word x 4-bit Dynamic Random Access Memory ADE-203-686A Z Rev. 1.0 Nov. 29, 1996 Description The Hitachi HM51W4405BS Series is a CMOS dynamic RAM organized 1,048,576-word × 4-bit. HM51W4405BS Series has realized higher density, higher performance and various functions by employing

Hitachi DSA00164

Contextual Info: HM51W17805 Series 16 M EDO DRAM 2-Mword x 8-bit 2 k Refresh ADE-203-631D (Z) Rev. 4.0 Nov. 1997 Description The Hitachi HM51W17805 is a CMOS dynamic RAM organized 2,097,152-word × 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W17805 offers

HM51W17805

Abstract: HM51W17805J-5 HM51W17805J-6 HM51W17805J-7 HM51W17805LJ-5 HM51W17805S-5 HM51W17805S-6 HM51W17805S-7 Hitachi DSA00196
Contextual Info: HM51W17805 Series 16 M EDO DRAM 2-Mword x 8-bit 2 k Refresh ADE-203-631D (Z) Rev. 4.0 Nov. 1997 Description The Hitachi HM51W17805 is a CMOS dynamic RAM organized 2,097,152-word × 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W17805 offers Extended

HM51W17805

Abstract: HM51W17805J-5 HM51W17805J-6 HM51W17805J-7 HM51W17805LJ-5 HM51W17805S-5 HM51W17805S-6 HM51W17805S-7 Hitachi DSA0015
Contextual Info: HM51W17805 Series 2,097,152-word x 8-bit Dynamic RAM ADE-203-631C Z Rev. 3.0 Feb. 25, 1997 Description The Hitachi HM51W17805 is a CMOS dynamic RAM organized 2,097,152-word × 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W17805 offers Extended

HM5118165

Abstract: HM5118165J-5 HM5118165J-6 HM5118165J-7 HM5118165LJ-5 HM5118165LJ-6 HM5118165LJ-7 HM5118165TT-5 HM5118165TT-6 Hitachi DSA0044
Contextual Info: HM5118165 Series 16 M EDO DRAM 1-Mword x 16-bit 1 k Refresh ADE-203-636D (Z) Rev. 4.0 Nov. 1997 Description The Hitachi HM5118165 is a CMOS dynamic RAM organized as 1,048,576-word × 16-bit. It employs the most advanced 0.5 µm CMOS technology for high performance and low power. The HM5118165 offers

HM51W17805LJ-5

Abstract: HM51W17805S-5 HM51W17805S-6 HM51W17805S-7 HM51W17805 HM51W17805J-5 HM51W17805J-6 HM51W17805J-7
Contextual Info: HM51W17805 Series 16 M EDO DRAM 2-Mword x 8-bit 2 k Refresh ADE-203-631D (Z) Rev. 4.0 Nov. 1997 Description The Hitachi HM51W17805 is a CMOS dynamic RAM organized 2,097,152-word × 8-bit. It employs the most advanced CMOS technology for high performance and low power. The HM51W17805 offers

Hitachi DSA00164

Contextual Info: HM5118165 Series 16 M EDO DRAM 1-Mword x 16-bit 1 k Refresh ADE-203-636D (Z) Rev. 4.0 Nov. 1997 Description The Hitachi HM5118165 is a CMOS dynamic RAM organized as 1,048,576-word × 16-bit. It employs the most advanced 0.5 µm CMOS technology for high performance and low power. The HM5118165 offers

HM5116405

Abstract: Hitachi DSA00164
Contextual Info: HM5116405 Series HM5117405 Series 16 M EDO DRAM 4-Mword x 4-bit 4 k Refresh/2 k Refresh ADE-203-633D (Z) Rev. 4.0 Nov. 1997 Description The Hitachi HM5116405 Series, HM5117405 Series are CMOS dynamic RAMs organized 4,194,304-word × 4-bit. They employ the most advanced CMOS technology for high performance and low power. The

HM5116405

Abstract: HM5116405LS-5 HM5116405LS-6 HM5116405LS-7 HM5116405S-5 HM5116405S-6 HM5116405S-7 HM5117405S-5 Hitachi DSA00513
Contextual Info: HM5116405 Series HM5117405 Series 16 M EDO DRAM 4-Mword x 4-bit 4 k Refresh/2 k Refresh ADE-203-633D (Z) Rev. 4.0 Nov. 1997 Description The Hitachi HM5116405 Series, HM5117405 Series are CMOS dynamic RAMs organized 4,194,304-word × 4-bit. They employ the most advanced CMOS technology for high performance and low power. The

HM5118165

Abstract: HM5118165J-5 HM5118165J-6 HM5118165J-7 HM5118165LJ-5 HM5118165LJ-6 HM5118165LJ-7 HM5118165TT-5 HM5118165TT-6 Hitachi DSA0064
Contextual Info: HM5118165 Series 16 M EDO DRAM 1-Mword x 16-bit 1 k Refresh ADE-203-636D (Z) Rev. 4.0 Nov. 1997 Description The Hitachi HM5118165 is a CMOS dynamic RAM organized as 1,048,576-word × 16-bit. It employs the most advanced 0.5 µm CMOS technology for high performance and low power. The HM5118165 offers

HM5116405

Abstract: HM5116405LS-5 HM5116405LS-6 HM5116405LS-7 HM5116405S-5 HM5116405S-6 HM5116405S-7 HM5117405S-5 HM5117405 Hitachi DSA0015
Contextual Info: HM5116405 Series HM5117405 Series 16 M EDO DRAM 4-Mword 4-bit 4 k Refresh/2 k Refresh ADE-203-633D (Z) Rev. 4.0 Nov. 1997 Description The Hitachi HM5116405 Series, HM5117405 Series are CMOS dynamic RAMs organized 4,194,304-word 4-bit. They employ the most advanced CMOS technology for high performance and low power. The

RP102G

Abstract: RP100G RP101G RP104G RP106G RP108G RP110G 102B2
Contextual Info: DI OT EC E L E C T R O N I C S CORP SfiE V DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310)767-7958 EflMTlO? GGOGIST ^bl « » I X Data Sheet No.: FSDP-102-A2 ' - n 0 3 -1 3 1 AMP FAST RECOVERY SOFT GLASS-PASSIVATED DIODES

CL-200 IR

Abstract: RP300G RP301G RP302G RP304G RP306G RP308G
Contextual Info: DIOTEC ELECTRONICS CORP SflE D M DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 u aL Tel.: 310 767-1052 Fax:(310)767-7958 m 204^107 OOODlb'i ADO • » I X Data Sheet No.: FSDP-301-A2 r r „ O 3 AMP FAST RECOVERY SOFT GLASS-PASSIVATED DIODES

HM51W17805

Abstract: HM51W17805J-5 HM51W17805J-6 HM51W17805J-7 HM51W17805LJ-5 HM51W17805S-5 HM51W17805S-6 HM51W17805S-7
Contextual Info: HM51W17805 Series 2,097,152-word x 8-bit Dynamic RAM ADE-203-631B Z Rev. 2.0 Nov. 12, 1996 Description The Hitachi HM51W17805 is a CMOS dynamic RAM, organized 2,097,152-words × 8-bits. It employs the most advanced CMOS technology for high performance and low power consumption. The HM51W17805