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    RN4987FE Price and Stock

    Toshiba America Electronic Components RN4987FE,LF(CT

    TRANS NPN/PNP PREBIAS 0.1W ES6
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    DigiKey RN4987FE,LF(CT Cut Tape 28,499 1
    • 1 $0.22
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    • 1000 $0.05375
    • 10000 $0.04763
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    RN4987FE,LF(CT Digi-Reel 28,499 1
    • 1 $0.22
    • 10 $0.134
    • 100 $0.22
    • 1000 $0.05375
    • 10000 $0.04763
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    RN4987FE,LF(CT Reel 28,000 4,000
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    • 10000 $0.03811
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    Mouser Electronics RN4987FE,LF(CT 7,329
    • 1 $0.2
    • 10 $0.125
    • 100 $0.052
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    Newark RN4987FE,LF(CT Cut Tape 6,450 5
    • 1 $0.26
    • 10 $0.183
    • 100 $0.089
    • 1000 $0.051
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    Chip One Stop RN4987FE,LF(CT Cut Tape 2,018
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    • 100 $0.0499
    • 1000 $0.0465
    • 10000 $0.0453
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    Toshiba America Electronic Components RN4987FE,LXHF(CT

    AUTO AEC-Q 2-IN-1 (POINT-SYMMETR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RN4987FE,LXHF(CT Reel 4,000 4,000
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    RN4987FE,LXHF(CT Cut Tape 2,820 1
    • 1 $0.4
    • 10 $0.248
    • 100 $0.4
    • 1000 $0.10335
    • 10000 $0.09249
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    RN4987FE,LXHF(CT Digi-Reel 1
    • 1 $0.4
    • 10 $0.248
    • 100 $0.4
    • 1000 $0.10335
    • 10000 $0.09249
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    Avnet Americas RN4987FE,LXHF(CT Reel 36 Weeks 4,000
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    Mouser Electronics RN4987FE,LXHF(CT 7,943
    • 1 $0.34
    • 10 $0.219
    • 100 $0.108
    • 1000 $0.083
    • 10000 $0.056
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    Toshiba America Electronic Components RN4987FELF(CT

    Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SC-107C T/R - Tape and Reel (Alt: RN4987FE,LF(CT)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas RN4987FELF(CT Reel 12 Weeks 4,000
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    • 10000 $0.0298
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    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components RN4987FE,LF(CB 3,200
    • 1 $0.83
    • 10 $0.83
    • 100 $0.83
    • 1000 $0.249
    • 10000 $0.166
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    RN4987FE Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RN4987FE Toshiba Japanese - Transistors Original PDF
    RN4987FE Toshiba Transistors Original PDF
    RN4987FE Toshiba Original PDF
    RN4987FE Toshiba RN4987 - TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2N1G, EXTREME SUPERMINI, ES6, 6 PIN, BIP General Purpose Small Signal Original PDF
    RN4987FE,LF(CB Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased - TRANS NPN/PNP PREBIAS 0.1W ES6 Original PDF
    RN4987FE,LF(CT Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased - TRANS NPN/PNP PREBIAS 0.1W ES6 Original PDF
    RN4987FE,LXHF(CT Toshiba America Electronic Components AUTO AEC-Q 2-IN-1 (POINT-SYMMETR Original PDF
    RN4987FE(T5L,F,T) Toshiba Transistors (BJT) - Arrays, Pre-Biased, Discrete Semiconductor Products, TRAN DUAL NPN/ PNP 50V 100MA ES6 Original PDF

    RN4987FE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    RN4987FE

    Abstract: No abstract text available
    Text: RN4987FE 東芝トランジスタ シリコンNPN • PNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN4987FE ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用 単位: mm


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    RN4987FE RN4987FE PDF

    RN4987FE

    Abstract: No abstract text available
    Text: RN4987FE TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4987FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Two devices are incorporated into an Extreme-Super-Mini (6 pin)


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    RN4987FE 000707EAA1 RN4987FE PDF

    RN4987FE

    Abstract: No abstract text available
    Text: RN4987FE TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN4987FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (6-pin)


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    RN4987FE RN4987FE PDF

    RN4987FE

    Abstract: No abstract text available
    Text: RN4987FE TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN4987FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (6-pin)


    Original
    RN4987FE RN4987FE PDF

    Q1/SMD A18 Transistor

    Abstract: No abstract text available
    Text: RN4987FE TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4987FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (6 pin)


    Original
    RN4987FE Q1/SMD A18 Transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: RN4987FE TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4987FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (6 pin)


    Original
    RN4987FE PDF

    Untitled

    Abstract: No abstract text available
    Text: RN4987FE TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN4987FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (6-pin)


    Original
    RN4987FE PDF

    Untitled

    Abstract: No abstract text available
    Text: RN4987FE TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN4987FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (6-pin)


    Original
    RN4987FE PDF

    Untitled

    Abstract: No abstract text available
    Text: RN4987FE TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN4987FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (6-pin)


    Original
    RN4987FE PDF

    Untitled

    Abstract: No abstract text available
    Text: RN4987FE TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4987FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm · Two devices are incorporated into an Extreme-Super-Mini (6 pin)


    Original
    RN4987FE PDF

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


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    BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983 PDF

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


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    200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R PDF

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 PDF

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


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    SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126 PDF

    toshiba YK smd marking

    Abstract: bdj0097a 2904 SMD IC 2SC3327 VA MARKING rn4983 smd marking Yd XA marking k 2968 toshiba RN1106FV
    Text: 抵抗内蔵型トランジスタ BRT SMD ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製


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    050106DAA1 12341D5AD BDJ0097A toshiba YK smd marking bdj0097a 2904 SMD IC 2SC3327 VA MARKING rn4983 smd marking Yd XA marking k 2968 toshiba RN1106FV PDF

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


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    02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B PDF

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 PDF

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


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    SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 PDF

    TPCA*8030

    Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 (トランジスタダイオード、セルパック) SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S


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    TC7SZ126FU SC-88A OT-353 BCJ0052E BCJ0052D TPCA*8030 lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558 PDF

    HN4C06J

    Abstract: te85l F 1SS302 2SC4117 SUFFIX TE85L Toshiba 2SK2145 HN1B04FE rn4983 US6 KEC RN1306
    Text: Small-Signal Multi-Chip Discrete Devices Transistors and Diodes PRODUCT GUIDE Contents What Is a Multi-Chip Discrete Device? • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 2


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    PDF

    TC7SZ08FU

    Abstract: lm2804 TC7S14F sot-24 led TC7SZ126FU TC7SZ125FU SOT-24 te85l F TC7W04F 2sc2240 equivalent
    Text: General-Purpose Small-Signal Surface-Mount Devices PRODUCT GUIDE CONTENTS 1. Package Information 3 to 6 2. Small Signal Transistors and Diodes 2.1 New Products 2.2 Small-Signal Transistors 2.3 Bias Resistor Transistora BRTs 6.1 Single Output type 6.2 Dual Output type


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    3407C-0209 TC7SZ08FU lm2804 TC7S14F sot-24 led TC7SZ126FU TC7SZ125FU SOT-24 te85l F TC7W04F 2sc2240 equivalent PDF

    GT45F122

    Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
    Text: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124 PDF

    GT30J124

    Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram PDF

    *45F122

    Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
    Text: 東芝半導体製品総覧表 2010 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 *45F122 GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322 PDF