RN2130F Search Results

RN1130F

Abstract: RN2130F
Contextual Info: RN2130F 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2130F ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用 単位: mm z 超小型パッケージ (ESM) のため超高密度実装に適しています。

RN1130FT

Abstract: RN2130FT 72U-A
Contextual Info: RN2130FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2130FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm Extra small package(TESM) is applicable for extra high density fabrication. Since bias resistance is built in the transistor, the miniaturization of the

RN1130F

Abstract: RN2130F
Contextual Info: RN2130F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2130F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process

Contextual Info: RN2130FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2130FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm z Extra small package(TESM) is applicable for extra high density fabrication. z Since bias resistance is built in the transistor, the miniaturization of the

Contextual Info: RN2130F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2130F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

Contextual Info: RN2130FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2130FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm Extra small package(TESM) is applicable for extra high density fabrication. Since bias resistance is built in the transistor, the miniaturization of the

RN1130F

Abstract: RN2130F
Contextual Info: RN2130F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2130F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

Contextual Info: RN2130FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2130FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.22±0.05 Unit : mm Simplify circuit design 2 3 0.13±0.05 0.4 1 0.5±0.05 Equivalent Circuit 0.8±0.05

RN2130FV

Abstract: sat 1205 RN1130FV
Contextual Info: RN2130FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2130FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.22±0.05 Unit : mm Simplified circuit design 2 3 0.13±0.05 0.4 1 0.5±0.05 Equivalent Circuit 0.8±0.05

RN1130F

Abstract: RN2130F
Contextual Info: RN2130F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2130F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process

Contextual Info: RN2130F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2130F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z z z z Unit : mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

RN1130F

Abstract: RN2130F RN47A6
Contextual Info: RN47A6 TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN47A6 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Ultra-Super-Mini (5 pin)

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

Contextual Info: RN1130FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1130FT Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Extra small package(TESM) is applicable for extra high density fabrication. Since bias resistance is built in the transistor,the miniaturization of the

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

toshiba YK smd marking

Abstract: bdj0097a 2904 SMD IC 2SC3327 VA MARKING rn4983 smd marking Yd XA marking k 2968 toshiba RN1106FV
Contextual Info: 抵抗内蔵型トランジスタ BRT SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

RN1130F

Abstract: RN2130F
Contextual Info: RN1130F 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1130F ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用 単位: mm z 超小型パッケージ (ESM) のため超高密度実装に適しています。

RN1130F

Abstract: RN2130F RN47A6
Contextual Info: RN47A6 東芝トランジスタ シリコンNPN • PNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN47A6 ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用 単位: mm •

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

RN1130FT

Abstract: RN2130FT marking X2
Contextual Info: RN1130FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1130FT Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Extra small package(TESM) is applicable for extra high density fabrication. Since bias resistance is built in the transistor,the miniaturization of the

Contextual Info: RN1130FV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1130FV Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications 0.22±0.05 Unit: mm Simplify circuit design 1.2±0.05 0.32±0.05 With built-in bias resistors 0.8±0.05

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

Contextual Info: RN47A6 TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN47A6 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Ultra-Super-Mini (5 pin)