Untitled
Abstract: No abstract text available
Text: RN2110F,RN2111F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2110F,RN2111F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
|
Original
|
PDF
|
RN2110F
RN2111F
RN1110F,
RN1111F
|
RN2111F
Abstract: RN1110F RN1111F RN2110F
Text: RN2110F,RN2111F 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2110F,RN2111F ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用 単位: mm
|
Original
|
PDF
|
RN2110F
RN2111F
RN1110FRN1111F
RN2110F
RN2111F
RN1110F
RN1111F
|
RN1110FT
Abstract: RN1111FT RN2110FT RN2111FT
Text: RN2110FT,RN2111FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2110FT,RN2111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • High-density mount is possible because of devices housed in very thin
|
Original
|
PDF
|
RN2110FT
RN2111FT
RN1110FT,
RN1111FT
RN1110FT
RN1111FT
RN2111FT
|
RN1110F
Abstract: RN1111F RN2110F RN2111F
Text: RN2110F,RN2111F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2110F,RN2111F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process
|
Original
|
PDF
|
RN2110F
RN2111F
RN1110F,
RN1111F
RN2110F
RN1110F
RN1111F
RN2111F
|
Untitled
Abstract: No abstract text available
Text: RN1110FS,RN1111FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1110FS, RN1111FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.6±0.05 • Complementary to RN2110FS, RN2111FS
|
Original
|
PDF
|
RN1110FS
RN1111FS
RN1110FS,
RN2110FS,
RN2111FS
|
RN2110FV
Abstract: RN1110FV
Text: RN1110FV,RN1111FV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1110FV, RN1111FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 0.22 ± 0.05 1.2 ± 0.05 Simplified circuit design 1 0.4 0.8 ± 0.05 Complementary to RN2110FV and RN2111FV
|
Original
|
PDF
|
RN1110FV
RN1111FV
RN1110FV,
RN2110FV
RN2111FV
|
RN2110FS
Abstract: RN1110FS RN1111FS RN2111FS
Text: RN2110FS,RN2111FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2110FS,RN2111FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • 0.6±0.05 Reducing the parts count enable the manufacture of ever more
|
Original
|
PDF
|
RN2110FS
RN2111FS
RN1110FS,
RN1111FS
RN1110FS
RN1111FS
RN2111FS
|
RN2111FS
Abstract: RN1110FS RN1111FS RN2110FS
Text: RN2110FS,RN2111FS 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2110FS,RN2111FS ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用
|
Original
|
PDF
|
RN2110FS
RN2111FS
RN1110FSRN1111FS
-20IC
RN2110FS
RN2111FS
RN1110FS
RN1111FS
|
RN2111FS
Abstract: No abstract text available
Text: RN2110FS,RN2111FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2110FS,RN2111FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.6±0.05 • Complementary to RN1110FS, RN1111FS
|
Original
|
PDF
|
RN2110FS
RN2111FS
RN1110FS,
RN1111FS
RN2111FS
|
RN1111FV
Abstract: RN1110FV RN2110FV RN2111FV
Text: RN1110FV,RN1111FV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1110FV,RN1111FV Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm 0.22 ± 0.05 1.2 ± 0.05 Simplify circuit design 1 0.4 0.8 ± 0.05 Complementary to RN2110FV, RN2111FV
|
Original
|
PDF
|
RN1110FV
RN1111FV
RN2110FV,
RN2111FV
RN1111FV
RN2110FV
RN2111FV
|
Untitled
Abstract: No abstract text available
Text: RN2110F,RN2111F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2110F,RN2111F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process
|
Original
|
PDF
|
RN2110F
RN2111F
RN1110F,
RN1111F
RN2110F
|
Untitled
Abstract: No abstract text available
Text: RN2110FT,RN2111FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2110FT,RN2111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • High-density mount is possible because of devices housed in very thin
|
Original
|
PDF
|
RN2110FT
RN2111FT
RN1110FT,
RN1111FT
RN2110FT
|
RN1110FT
Abstract: RN1111FT RN2110FT RN2111FT
Text: RN2110FT,RN2111FT 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2110FT, RN2111FT ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用
|
Original
|
PDF
|
RN2110FT
RN2111FT
RN2110FT,
RN1110FT,
RN1111FT
RN2110FT
RN1110FT
RN1111FT
RN2111FT
|
RN1110FS
Abstract: RN1111FS RN2110FS RN2111FS
Text: RN2110FS,RN2111FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2110FS,RN2111FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.6±0.05 • Complementary to RN1110FS, RN1111FS
|
Original
|
PDF
|
RN2110FS
RN2111FS
RN1110FS,
RN1111FS
RN1110FS
RN1111FS
RN2111FS
|
|
|
Untitled
Abstract: No abstract text available
Text: RN2110FT,RN2111FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2110FT,RN2111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • High-density mount is possible because of devices housed in very thin
|
Original
|
PDF
|
RN2110FT
RN2111FT
RN1110FT,
RN1111FT
|
sat 1205
Abstract: RN2110FV toshiba Transistor Silicon pct TOSHIBA Transistor Silicon PNP Epitaxial Type RN1110FV RN1111FV RN2111FV
Text: RN2110FV,RN2111FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2110FV, RN2111FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.22±0.05 Unit : mm Simplified circuit design 2 3 0.13±0.05 0.4 1 0.5±0.05 Equivalent Circuit
|
Original
|
PDF
|
RN2110FV
RN2111FV
RN2110FV,
RN1110FV,
RN1111FV
sat 1205
toshiba Transistor Silicon pct
TOSHIBA Transistor Silicon PNP Epitaxial Type
RN1110FV
RN1111FV
RN2111FV
|
RN2110F
Abstract: No abstract text available
Text: RN2110F,RN2111F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2110F,RN2111F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process
|
Original
|
PDF
|
RN2110F
RN2111F
RN1110F,
RN1111F
|
Untitled
Abstract: No abstract text available
Text: RN2110FT,RN2111FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2110FT,RN2111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • High-density mount is possible because of devices housed in very thin
|
Original
|
PDF
|
RN2110FT
RN2111FT
RN1110FT,
RN1111FT
|
Untitled
Abstract: No abstract text available
Text: RN2110FV,RN2111FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2110FV,RN2111FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.22±0.05 Unit : mm Simplify circuit design 2 3 0.13±0.05 0.4 1 0.5±0.05 Equivalent Circuit
|
Original
|
PDF
|
RN2110FV
RN2111FV
RN1110FV,
RN1111FV
|
RN2110FT
Abstract: toshiba Transistor Silicon pct TOSHIBA Transistor Silicon PNP Epitaxial Type RN1110FT RN1111FT RN2111FT transistor marking YK
Text: RN2110FT,RN2111FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2110FT,RN2111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • High-density mount is possible because of devices housed in very thin
|
Original
|
PDF
|
RN2110FT
RN2111FT
RN1110FT,
RN1111FT
toshiba Transistor Silicon pct
TOSHIBA Transistor Silicon PNP Epitaxial Type
RN1110FT
RN1111FT
RN2111FT
transistor marking YK
|
RN1110F
Abstract: RN1111F RN2110F RN2111F
Text: RN2110F,RN2111F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2110F,RN2111F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process
|
Original
|
PDF
|
RN2110F
RN2111F
RN1110F,
RN1111F
RN1110F
RN1111F
RN2111F
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA RN2110F,RN2111F TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN711Í1F RN7111F • m ■ 'm g ■ m ■ 'm ■ ■ ■ ■■ SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors
|
OCR Scan
|
PDF
|
RN2110F
RN2111F
RN711
RN7111F
RN1110F,
RN1111F
RN2110F
RN2111F
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA RN2110F#R N 2111F TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2110F, RN2111F Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors Simplify Circuit Design
|
OCR Scan
|
PDF
|
RN2110F
2111F
RN2110F,
RN2111F
RN1110F,
RN1111F
150umed
RN2110F
|
Untitled
Abstract: No abstract text available
Text: T O SH IB A RN2110F,RN2111F TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2110F, RN2111F SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT U n it in mm AND DRIVER CIRCUIT APPLICATIONS. 1.6 ± 0.1 • • With Built-in Bias Resistors Simplify Circuit Design
|
OCR Scan
|
PDF
|
RN2110F
RN2111F
RN2110F,
RN1110F,
RN1111F
RN2110F
|
