hl 4929
Abstract: GK02 bk31 772 gk SEG357 gk03 4A3E gk71 Hitachi DSA002732 SEG340
Text: Preliminary HD66761 128 x 80-dot Graphics LCD Controller/Driver for 256 Colors Rev 0.5 July 4, 2000 Description The HD66761, color-graphics LCD controller and driver LSI, displays 128-by-80-dot graphics for 256 STN colors. It consists of upper and lower screens and drives maximum 128-by-160-dot STN color
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HD66761
80-dot
HD66761,
128-by-80-dot
128-by-160-dot
HD66761
16-bit
hl 4929
GK02
bk31
772 gk
SEG357
gk03
4A3E
gk71
Hitachi DSA002732
SEG340
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bk31
Abstract: 7721
Text: To all our customers Information regarding change of names mentioned within this document, to Renesas Technology Corp. On April 1st 2003 the following semiconductor operations were transferred to Renesas Technology Corporation: operations covering microcomputer, logic,
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SEG324
Abstract: COM136 STB 567 Comparison 6N6 amplifier 853E 45 853F 05VCC
Text: HD66762 HD66762 128 x 136-dot Graphics LCD Controller/Driver for 256 Colors Rev 1.0 October. 2001 Description The HD66762, color-graphics LCD controller and driver LSI, displays 128-by-136-dot graphics for 256 STN colors. The HD66762's bit-operation functions and a 16-bit high-speed
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HD66762
136-dot
HD66762,
128-by-136-dot
HD66762
16-bit
12-times
DB158
SEG324
COM136
STB 567 Comparison
6N6 amplifier
853E 45
853F
05VCC
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inconel thermocouple
Abstract: WT16-71515-000-0-00 WK18-71503-000-0-00 WF24 MJ-26 Hoskins2300 K20B WT20-11507-000-0-00 A1046 A0712
Text: WIRE AND ACCESSORIES Wire and Accessories Wire & Accessories Wire/Acc d Re 2-1 /2" BARBER-COLMAN CO. LOVES PARK, ILL. U.S.A. CL 90°, ceramic insulated HL BA LO RB VE ER S -C PA O RK LM , IL AN L. C U.S O . .A . 07 Si 18 ng 0 le Ex te ns io n Ja ck an d Bo
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1110-PD-001-0-00
inconel thermocouple
WT16-71515-000-0-00
WK18-71503-000-0-00
WF24
MJ-26
Hoskins2300
K20B
WT20-11507-000-0-00
A1046
A0712
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MIL-T-55155
Abstract: ali 3329 ali m 3329 BA 5979 5740-14 SE181 SE191D01 57b9 MZ-157 EMC 8200 E
Text: Single - Turret Standoffs ADVANCED INTERCONNECTIONS' 5 Energy Way, P.O. Box 1342, West Warwick, Rl 02893 • Tel. 401-823-5200 • FAX 401-823-8723 •TWX 9102403454 EMC*Product "STS" Series Plating: 400p" Tin terminal, 200|i" Cadm ium Chrom ate base/eyelet
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QQ-B-626
MIL-M-14F
MIL-T-55155
ali 3329
ali m 3329
BA 5979
5740-14
SE181
SE191D01
57b9
MZ-157
EMC 8200 E
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TRANSISTOR 132-gd
Abstract: TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes
Text: Vergleichsliste Halbleiter Bauelemente In h a lt: Einleitung Typenbezeichnung und Form elzeichen G e g e n ü b e r s t e ll u n g n a c h A l p h a b e t : T ransistoren G leichrichterdioden Leistungs-Zenerdioden V e rg le ic h nach T y p e n g ru p p e n
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06o3H
TRANSISTOR 132-gd
TRANSISTORS 132 GD
equivalent io transistor 131-G
bbc ds diodes DS 1,8
transistor vergleichsliste
aeg diode Si 61 L
AF124
Transistor Vergleichsliste DDR
OC1044
bbc ds diodes
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ic HM 392 - 110
Abstract: vitrohm 412 101 R15 N 470 KP
Text: Vorzugswerte nach DIN/IEC 63: E6 E 12 E 24 E6 E 12 1.0 1.0 1.0 1.1 1.2 1.3 1.5 1.6 1.8 2.0 2.2 2.4 2.7 3.0 3.3 3.3 1.2 1.5 1.5 1.8 2.2 2 .2 2.7 E 48 E 96 E 192 E 48 E 96 100 100 100 162 162 101 102 105 102 105 165 169 169 174 109 110 110 110 178 115 115 182
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VSF203
Abstract: selen-gleichrichter OA625 VSF200 selengleichrichter Dioden SY 250 GY123 GY112 VEB Keramische Werke GC301
Text: d U 3 iu d |d n D g - J 3 i;d |q |D |_ | Dioden G erm anium dio den Type Durdilaßsponnung U f [Y ] Durchlaß strom If [mA] SperrSpannung Sperrstrom Ir [; xA] U r [V] max. zuläss. Sperr spannung URmax [V] max. zuläss. DurchlaßStrom Bau Verwendungszweck
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TRANSISTOR noise figure measurements
Abstract: Hewlett-Packard application note 970 et1102 14CL 40 HFET-1101 HFET-1102 2N6680 D5880 application note Hewlett-Packard 970 line AMPLIFIER satellite
Text: NEW H E W L E T T P A C KARD 2N6680 HFET-1101 HFET-1102 MICROWAVE GaAS FETS GaAs FETs COMPONENTS Features LOW NOISE FIGURE 1.6 dB Typical at 4 GHz (2N6680) 1.7 dB Maximum at 4 GHz (HFET-1102) 1.5 dB Typical a HIGH GAIN 16 dB Typical at 4 GHz HIGH OUTPUT POWER
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2N6680
HFET-1101)
HFET-1102
2N6680)
HFET-1102)
HFET-1102
TRANSISTOR noise figure measurements
Hewlett-Packard application note 970
et1102
14CL 40
HFET-1101
2N6680
D5880
application note Hewlett-Packard 970
line AMPLIFIER satellite
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keramische Werke Hermsdorf
Abstract: Mischstufen VEB Keramische Werke OA741 OA645 OA625 hermsdorf OA665 neue halbleiterbauelemente Amateur
Text: HalbleiterBauelemente Dioden Germanium dioden Type Durchlaß spannung U a k IVI Durchlaß strom Sperr spannung lA K l m A l U k a |V| Sperrstrom IKA li'AI max. zuläss. Sperr spannung jEä max. zuass. Durchlaß strom UKAma* IVI ^AKmax !mAl Bau
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Halbleiterbauelemente DDR
Abstract: BEL 639 transistor Sowjetische Halbleiter-Bauelemente KBC111 k4213 Germanium Transistor katalog radio fernsehen elektronik elektronik DDR KT904 KT372
Text: K a ta lo g sowjetischer H albleiterbauelem ente Si« linden im K a t a lo g t e il : Der hiermit unseren Lesern vorgelegte Katalog sowjetischer Transistoren, Dioden und integrierter Schaltkreise ist das Resultat enger Zusammen arbeit zwischen dem VEB Elektronikhandel Berlin und der Redaktion der
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la 4287
Abstract: LA 4288
Text: Wtipl WLtiM HERMETIC, NUMERIC AND HEXADECIMAL DISPLAYS FOR MILITARY APPLICATIONS HEW LETT PACKARD HIGH EFFICIENCY RED LOW P o w e r High B rightness YELLOW H igh P e rfo rm a n c e GREEN H D S P -0 78X /07 8X T X V /078 X T X V B H D S P -0 79X /07 9X T X V /079 X T X V B
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MIL-D-87157,
-098X
la 4287
LA 4288
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Untitled
Abstract: No abstract text available
Text: 19-1075; R e v 0; 6 /9 6 jv \ / \ y a jv \ 5 V /3 .3 V or A djustable, 100% Duty-Cycle, High-Efficiency; Step-Down DC-DC Controllers Features ♦ Low Dropout Voltage These step-dow n controllers drive an external P-channel MOSFET, allowing design flexibility for a pplications
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300kHz)
004in.
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Untitled
Abstract: No abstract text available
Text: SSiSS/Resistors m m & a :p p PP f t • m m m & • * * * A • # 5 fp n0 • 2j m i 2|Ibhp • jjx z a s MCR x — E"> X lino i a t t - p & W £ r f f l * L T 1 /'-5 8!nnn T ' t o p MCR10 ttz, IK linO x —E > * 5 — $<7 jM 88 If'iL'W t X V£ 4 lino r a x ic g L tir a ,
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MCR25
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EL 817 C108
Abstract: STR 6456 star micro-electronics ltda Remington 700 ak 957 pioneer audio ic AEG - AKTIENGESELLSCHAFT ic 9022 spa microelectronic ltda Telefunken Electronic 867 905 101 A
Text: Te m ic Sates Offices TELEFUNKEN Semiconductors Addresses Europe Denmark Germany TEMIC Dansk d o AEG Dansk Aktieselskab Roskildevej 8-10 2620 Albertslund Tel: 45 42 6485 22 Fax: 45 43 6262 28 TEMIC TELEFUNKEN microelectronic GmbH Erfurter Strasse 31 85386 Eching
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761-B,
EL 817 C108
STR 6456
star micro-electronics ltda
Remington 700
ak 957
pioneer audio ic
AEG - AKTIENGESELLSCHAFT
ic 9022
spa microelectronic ltda
Telefunken Electronic 867 905 101 A
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str f 6456
Abstract: str x 6456 SM 5126 BP STR F 6168 str 6668 STR G 6352 STR 6456 str f 6468 321 CJ 7121 AXP 209 IC
Text: Tem ic Se ni i co n fi li c t ci Sales Offices rs Addresses Europe France TE M IC France Les Q uadrants 3. avenue du centre B.P. 309 78054 S t.-Q uentin-en-Y veL nes Cedex Tel: 33 I 3060 7000 F a x :33 I 3060 V 11 i Germany TE M IC TE LEFU N K EN m icroelectronic G m bH
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09-Dec-96
str f 6456
str x 6456
SM 5126 BP
STR F 6168
str 6668
STR G 6352
STR 6456
str f 6468
321 CJ 7121
AXP 209 IC
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613 GB 123 CT
Abstract: transistor NEC D 587 Ic D 1708 ag 513 gb 173 ct MPA80 nec d 882 p transistor ic nec 2051 transistor NEC D 882 p NEC 2561 h NEC 2561 de
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA803T NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD /xPA803T has b u ilt-in 2 tra n s is to rs w h ic h w e re d e v e lo p e d fo r UHF. PACKAGE DRAW INGS (U n it: m m ) FEATURES • H igh fT
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uPA803T
/xPA803T
2SC4570)
613 GB 123 CT
transistor NEC D 587
Ic D 1708 ag
513 gb 173 ct
MPA80
nec d 882 p transistor
ic nec 2051
transistor NEC D 882 p
NEC 2561 h
NEC 2561 de
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SN 4931
Abstract: 2sc 3476 2SC 1885 SN 4931 N
Text: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/MIX. It is suitable for a high density surface mount assem bly since the
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2SC5005
2SC5005
SN 4931
2sc 3476
2SC 1885
SN 4931 N
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490.2159
Abstract: Kombinat VEB Elektronische Bauelemente VEB Kombinat 49004 veb taschenbuch Kombinat VEB asterm Bauelementeinformation VEB M ik ro e le k tro n ik bauelemente Kombinat
Text: Widerstände Kombinat VEB Elektronische Bauelemente W ID E R S T Ä N D E In h a lt Feste S ch ic h tw id e rstä n d e Seite 6 V e r ä n d e rb a re S ch ich tw id e rstä n d e 50 Ein ste ilre g ier Kohleschicht Ein ste ilre g ler (Cerm etschicht) Potentiometer
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icl7212
Abstract: Low Cost Digital Panel Meter Designs ICL7135 transistor a017 ICL7212A Low Cost Digital Panel Meter Designs" NH 12 NIXIE "Understanding the Auto-Zero and Common Mode 7135 led driver standard cmos 4000 series
Text: IC L 7 1 3 5 Precision 4Va D igit Single Chip A /D Converter D IM Ü Ö ^IIIL FEATURES GENERAL D ESCRIPTIO N • Accuracy guaranteed to ±1 count over entire ±20,000 counts 2.0000 volts full scale • Guaranteed zero reading for 0 volts input • 1 pA typical input current
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ICL7135
ICL7135
MC6800
052A/7103A
ICL7104
ICL7106
icl7212
Low Cost Digital Panel Meter Designs
transistor a017
ICL7212A
Low Cost Digital Panel Meter Designs"
NH 12 NIXIE
"Understanding the Auto-Zero and Common Mode
7135 led driver
standard cmos 4000 series
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HDSP-2000
Abstract: HDSP-2003 hdsp2003 HDSP2001 hp hdsp-2000 HDSP-2002 HDSP2000 HP 5x7 LED driver IC AD626 hdsp 2000
Text: HEWLETT-PACKARDi CMP N T S 20E I> • 4447564 Q0Dt>4bT T ■ _ 7 ^ / / - J 7 FOUR CHARACTER 3.8 m m 0.15 INCH 5X7 ALPHANUMERIC DISPLAYS STANDARD RED YELLOW HIGH EFFICIENCY RED HIGH PERFORMANCE GREEN HDSP-2000 HDSP-2001 HDSP-2002
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T-V/-37
HDSP-2000
HDSP-2001
HDSP-2002
HDSP-2003
HDSP-2001/2003
HDSP-2000/-2001/-2002/-2003
0J584i
HDSP-2003
hdsp2003
HDSP2001
hp hdsp-2000
HDSP-2002
HDSP2000
HP 5x7 LED driver IC
AD626
hdsp 2000
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B083D
Abstract: u82720 A110D TDA4100 ub8830d V40511D taa981 A109D sy 710 IC 7447
Text: > i ! U O i j q > i a | a S [ ^ ] 0 [ y y H erstellerbetriebe Bei den einzelnen Erzeugnissen werden die Herstellerbetriebe durch die nachfolgend angegebenen Symbole gekennzeichnet: VEB M ik ro e le k tro n ik „K a rl M a r x “ Erfurt L e itb e tr ie b im VEB K o m b in a t M ik ro e le k tr o n ik
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR ¿¿PA803T NPN SILICON EPITAXIALTRANSISTO R WITH BUILT-IN 2 ELEMENTS M INI MOLD ¿¡PA803T has b u ilt-in 2 tra n s is to rs w h ic h w e re d e v e lo p e d fo r UHF. PACKAGE DRAWINGS (U n it: m m ) FEATURES •
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PA803T
PA803T
2SC4570)
uPA803T
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0,22 j 160 tgl 55163
Abstract: VEB M ik ro e le k tro n ik Scans-048 TGL-200 asterm DSAGER0002 DSAGER00027 TGL 200
Text: ondensatoren T s c CD c~ t CD c T O Q _ CD Program m übersicht K a p a z itä ts b e re ic h B a u fo rm Typ/TG L 3300 1000 330 1000 38 159 pF - 0,1 //F p F - 0 ,1 f jf pF - 0,022 ,F p F - 0 , 0 2 2 ,F Spannungsre ih e T o le ra n z P rü fkla sse A n w e n d u n g s k la s s e
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