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    RJK1055DPB Search Results

    RJK1055DPB Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    RJK1055DPB-00#J5 Renesas Electronics Corporation Nch Single Power Mosfet 100V 23A 17Mohm Lfpak Visit Renesas Electronics Corporation
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    RJK1055DPB Price and Stock

    Renesas Electronics Corporation RJK1055DPB-00-J5

    MOSFET N-CH 100V 23A LFPAK
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    DigiKey RJK1055DPB-00-J5 Cut Tape 7,335 1
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    RJK1055DPB-00-J5 Digi-Reel 7,335 1
    • 1 $3.59
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    RJK1055DPB-00-J5 Reel 2,500
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    Renesas Electronics Corporation RJK1055DPB-00#J5

    Trans MOSFET N-CH 100V 23A 5-Pin(4+Tab) LFPAK T/R - Tape and Reel (Alt: RJK1055DPB-00#J5)
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    Avnet Americas RJK1055DPB-00#J5 Reel 18 Weeks 2,500
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    Mouser Electronics RJK1055DPB-00#J5 1,597
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    Avnet Silica RJK1055DPB-00#J5 20 Weeks 2,500
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    Renesas Electronics Corporation RJK1055DPB00J5

    POWER SWITCHING SILICON N CHANNEL MOS FET Power Field-Effect Transistor, 23A I(D), 100V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA RJK1055DPB00J5 512
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    RJK1055DPB Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RJK1055DPB-00#J5 Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 23A LFPAK Original PDF
    RJK1055DPB-WS#J5 Renesas Electronics America IGBT Original PDF

    RJK1055DPB Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK1055DPB 100V, 23A, 17m max. Silicon N Channel Power MOS FET Power Switching R07DS1058EJ0200 Previous: REJ03G1887-0100 Rev.2.00 Apr 11, 2013 Features • High speed switching  Low drive current  Low on-resistance RDS(on) = 13 m typ. (at VGS = 10 V)


    Original     		RJK1055DPB R07DS1058EJ0200 REJ03G1887-0100) PTZZ0005DA-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary RJK1055DPB Silicon N Channel Power MOS FET Power Switching REJ03G1887-0100 Rev.1.00 Nov 10, 2009 Features • • • • • Pb-free • Halogen-free • High density mounting High speed switching Low drive current Low on-resistance RDS on = 13 mΩ typ. (at VGS = 10 V)


    Original     		RJK1055DPB REJ03G1887-0100 PTZZ0005DA-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary RJK1055DPB Silicon N Channel Power MOS FET Power Switching REJ03G1887-0100 Rev.1.00 Nov 10, 2009 Features • • • • • Pb-free • Halogen-free • High density mounting High speed switching Low drive current Low on-resistance RDS on = 13 mΩ typ. (at VGS = 10 V)


    Original     		RJK1055DPB REJ03G1887-0100 PTZZ0005DA-A PDF

    RJK1055DPB

    Abstract: No abstract text available
    Text: Preliminary RJK1055DPB Silicon N Channel Power MOS FET Power Switching REJ03G1887-0100 Rev.1.00 Nov 10, 2009 Features • • • • • Pb-free • Halogen-free • High density mounting High speed switching Low drive current Low on-resistance RDS on = 13 mΩ typ. (at VGS = 10 V)


    Original     		RJK1055DPB REJ03G1887-0100 PTZZ0005DA-A RJK1055DPB PDF

    RJH60F7

    Abstract: rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652
    Text: Solutions for Enhanced Power Management Power MOSFETs, TRIACs, Thyristors, and IGBTs System designs that save energy have valuable marketing advantages. Yet new products typically must deliver increasingly complex functionality and higher levels of performance — a combination that tends to


    Original     		RJP6085DPN O-220AB RJP6085DPK RJH6085BDPK RJH6086BDPK RJH6087BDPK RJH6088BDPK RJH60F7 rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652 PDF

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


    Original     		R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606 PDF

    RJK1055DPB

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


    Original     		R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram PDF

    RJK03P7DPA

    Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
    Text: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position


    Original     		0000-A PAE-AA-12-0177-1 PAE-AA-12-0049-1 RJK03P7DPA NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1 PDF

    rjh60f5

    Abstract: RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK
    Text: Rev.27.01 2010.2.2 Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation www.renesas.com Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation January 2010 Standard Product Business Group 2/2/2010 Rev.27.01 2010. Renesas Technology Corp., All rights reserved.


    Original     		REJ13G0003-2701 rjh60f5 RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK PDF

    HAT1125H

    Abstract: ff 0401 HAT2270H LFPAK footprint Renesas rjk305 uPA2749UT1A RJK03C1DPB RJK305DPB UPA2802T1L UPA2807T1L
    Text: High performance PowerMOSFET for low voltage industrial and consumer applications www.renesas.eu 2010.09 To meet future design demands for high performance cost and space reductions the high performance PowerMOSFET provide design engineers with a head start. A wide voltage range VDSS = 12V.250V of high efficient


    Original     		uPA27xxUT1A R07PF0002ED0100 HAT1125H ff 0401 HAT2270H LFPAK footprint Renesas rjk305 uPA2749UT1A RJK03C1DPB RJK305DPB UPA2802T1L UPA2807T1L PDF