RJK0659DPA Search Results

RJK0659DPA Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
RJK0659DPA-00#J5A		Renesas Electronics Corporation	Nch Single Power Mosfet 60V 30A 8Mohm Wpak

RJK0659DPA Price and Stock

Filter by Manufacturer


Renesas Electronics Corporation RJK0659DPA-00-J5A MOSFET N-CH 60V 30A 8WPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJK0659DPA-00-J5A	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $1.095	Buy Now
	RJK0659DPA-00-J5A	Cut Tape			1	1 $2.83 10 $2.83 100 $2.83 1000 $2.83 10000 $2.83	Buy Now
	RJK0659DPA-00-J5A	Digi-Reel			1	1 $2.83 10 $2.83 100 $2.83 1000 $2.83 10000 $2.83	Buy Now
Renesas Electronics Corporation RJK0659DPA-00#J5A Trans MOSFET N-CH 60V 30A 8-Pin WPAK(3F) T/R - Tape and Reel (Alt: RJK0659DPA-00#J5A)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	RJK0659DPA-00#J5A	Reel		18 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	RJK0659DPA-00#J5A					1 - 10 - 100 - 1000 - 10000 $1.09	Get Quote
Renesas Electronics America	RJK0659DPA-00#J5A	Tape & Reel (TR)	6,000		1	1 $2.83 10 $2.83 100 $2.83 1000 $2.83 10000 $1.095	Buy Now

RJK0659DPA Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
RJK0659DPA-00#J5A		Renesas Electronics	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 30A WPAK		Original	PDF

RJK0659DPA Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
RJK0659DPA Abstract: No abstract text available Text: Preliminary Datasheet RJK0659DPA 60V, 30A, 8.0mΩ max. N Channel Power MOS FET High Speed Power Switching R07DS0345EJ0300 Rev.3.00 Apr 09, 2013 Features •      High speed switching Low drive current High density mounting Low on-resistance	Original	PDF	RJK0659DPA R07DS0345EJ0300 PWSN0008DE-A RJK0659DPA
RJK0659DPA Abstract: No abstract text available Text: Preliminary Datasheet RJK0659DPA R07DS0345EJ0100 Rev.1.00 Apr 06, 2011 Silicon N Channel Power MOS FET Power Switching Features • • • • High speed switching Low drive current High density mounting Low on-resistance RDS on = 6.5 mΩ typ. (at VGS = 10 V)	Original	PDF	RJK0659DPA R07DS0345EJ0100 PWSN0008DC-B RJK0659DPA
RJK0659DPA Abstract: No abstract text available Text: Preliminary Datasheet RJK0659DPA R07DS0345EJ0100 Rev.1.00 Apr 06, 2011 Silicon N Channel Power MOS FET Power Switching Features • • • • High speed switching Low drive current High density mounting Low on-resistance RDS on = 6.5 mΩ typ. (at VGS = 10 V)	Original	PDF	RJK0659DPA R07DS0345EJ0100 PWSN0008DC-B RJK0659DPA
RJK03P7DPA Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1 Text: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position	Original	PDF	0000-A PAE-AA-12-0177-1 PAE-AA-12-0049-1 RJK03P7DPA NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1