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    RJK03H1DPA-00#J5A Renesas Electronics Corporation N Channel Power MOSFET Visit Renesas Electronics Corporation

    RJK03H1DPA Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RJK03H1DPA-00#J5A Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 45A WPAK Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03H1DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0216EJ0200 Power Switching Rev.2.00 Dec 07, 2010 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		PDF RJK03H1DPA R07DS0216EJ0200 PWSN0008DC-B

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03H1DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0216EJ0200 Power Switching Rev.2.00 Dec 07, 2010 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		PDF RJK03H1DPA R07DS0216EJ0200 PWSN0008DC-B curren9044

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03H1DPA 30V, 45A, 2.4mΩmax. Built in SBD N Channel Power MOS FET High Speed Power Switching R07DS0216EJ0300 Rev.3.00 Mar 22, 2013 Features •       High speed switching Capable of 4.5 V gate drive Low drive current


    Original     		PDF RJK03H1DPA R07DS0216EJ0300 PWSN0008DE-A