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    RJK0303DPB Result Highlights (1)

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    RJK0303DPB Renesas Electronics Corporation Nch Single Power Mosfet 30V 40A 3.7Mohm Lfpak Visit Renesas Electronics Corporation
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    Renesas Electronics Corporation RJK0303DPB-00#J0

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    Bristol Electronics RJK0303DPB-00#J0 2,500
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    RJK0303DPB Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RJK0303DPB Renesas Technology Transistor Mosfet N-CH 30V 40A 5LFPAK Original PDF
    RJK0303DPB-00#J0 Renesas Technology FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 40A 5-LFPAK Original PDF
    RJK0303DPB-00-J0 Renesas Technology Silicon N Channel Power MOS FET Power Switching Original PDF

    RJK0303DPB Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: RJK0303DPB Silicon N Channel Power MOS FET Power Switching REJ03G1341-0600 Rev.6.00 Apr 19, 2006 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 3.1 mΩ typ. (at VGS = 10 V)


    Original     		RJK0303DPB REJ03G1341-0600 PTZZ0005DA-A PDF

    Untitled

    Abstract: No abstract text available
    Text: RJK0303DPB Silicon N Channel Power MOS FET Power Switching REJ03G1341-0600 Rev.6.00 Apr 19, 2006 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 3.1 mΩ typ. (at VGS = 10 V)


    Original     		RJK0303DPB REJ03G1341-0600 PTZZ0005DA-A PDF

    RJK0303DPB

    Abstract: RJK0303DPB-00-J0
    Text: RJK0303DPB Silicon N Channel Power MOS FET Power Switching REJ03G1341-0600 Rev.6.00 Apr 19, 2006 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 3.1 mΩ typ. (at VGS = 10 V)


    Original     		RJK0303DPB REJ03G1341-0600 PTZZ0005DA-A RJK0303DPB RJK0303DPB-00-J0 PDF

    lenovo

    Abstract: TP8370 TP8107 TP8117 TP8111 C9041 C9045 TP8116 lenovo t42 TP8109
    Text: A B C D E F G H I J K L M N O DC-IN PAGE 75 9 9 ITP CONNECTOR PAGE 6 CLK GEN Merom SFF PAGE 3,4,5 THERMAL SENSEER 8 VCC3_EC/VCC5M TI51220 PAGE 19 ICS954309 PAGE 81 AGTL+ FSB 800/667MHz 4X Data 2X Address PAGE 69 1R25AMT (BD3508) PAGE 88 LVDS SO-DIMM DRAM


    Original     		ICS954309 TI51220) 800/667MHz 1R25AMT BD3508) 533/667MHz VCC1R5M/VCC1R05B MAX1540) MAX8632) ADP3207) lenovo TP8370 TP8107 TP8117 TP8111 C9041 C9045 TP8116 lenovo t42 TP8109 PDF

    ISL9504

    Abstract: b6886 PP3V42G3H NVIDIA G84m ISL9504BCRZ C8050 12v p66 apple k50 apple M75 MLB 820-2101 PP3V42
    Text: 8 6 7 2 3 4 5 CK APPD OROYA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ? 03/20/2007 - DVT


    Original     		ISL10 ISL11 ISL9504 b6886 PP3V42G3H NVIDIA G84m ISL9504BCRZ C8050 12v p66 apple k50 apple M75 MLB 820-2101 PP3V42 PDF

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


    Original     		R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606 PDF

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 PDF

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


    Original     		R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram PDF

    rjp6065

    Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
    Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance


    Original     		PDF

    TCP8107

    Abstract: u212b ricoh r5c833 RT8203 9lprs9 bg10v mac232 U207A U207B PC821
    Text: 5 4 3 2 1 01_Block Diagram 02_System Setting 03_CPU-PENRYN 1 Penryn 05_CPU-Capacitor 06_NB_-CANTIGA-CPU (1) LVDS LCD 08_NB_-CANTIGA-DDR2 bus (3) P21 09_NB_-CANTIGA-POWER (4) 10_NB_-CANTIGA-POWER (5) 15_SB_-ICH9M(PWR) MXM CONN. 16_SB_-ICH9M-OTHER (Z97V ONLY)


    Original     		1066MHz 9LPRS929 P22-23 MAX6657MSA TCP8107 u212b ricoh r5c833 RT8203 9lprs9 bg10v mac232 U207A U207B PC821 PDF

    ISL9504

    Abstract: macbook pro 13 m9 apple PP3V42G3H 51c7 macbook 5d4 diode "board view" macbook diode 62b3 28b sot23-3
    Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEMATIC,MACBOOK PRO 17" ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ?


    Original     		PDF

    L6703

    Abstract: ISL9504 ntc 10d-7 55D8 55B3 sot23-5 32 pin Mini-DVI to VGA connector PP3V42G3H 31d6 D7950 J5550
    Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. K36 MLB SCHEMATIC REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ?


    Original     		ITP700FLEX L6703 ISL9504 ntc 10d-7 55D8 55B3 sot23-5 32 pin Mini-DVI to VGA connector PP3V42G3H 31d6 D7950 J5550 PDF

    ISL9504

    Abstract: j4310 BD9828 ISL9504B NVIDIA G84m RN5VD30A-F SLG2AP101 Q7080 88E8058 PP3V42G3H
    Text: 8 6 7 04/02/2007 Contents D Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM


    Original     		03/19/m 100-ohm 95-ohms ISL10 ISL11 ISL9504 j4310 BD9828 ISL9504B NVIDIA G84m RN5VD30A-F SLG2AP101 Q7080 88E8058 PP3V42G3H PDF

    ISL9504

    Abstract: ISL9504B M75 MLB 820-2101 PP3V42G3H C8550 c7381 N8242 c5855 ISL9504 U7500 c3334 schematic diagram
    Text: 8 6 7 2 3 4 5 CK APPD OROYA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ? 03/20/2007 - DVT


    Original     		ISL10 ISL11 ISL9504 ISL9504B M75 MLB 820-2101 PP3V42G3H C8550 c7381 N8242 c5855 ISL9504 U7500 c3334 schematic diagram PDF

    rjk5020

    Abstract: HAT2195WP pfcpwm H8N0801AB HA16167 rjk0305dpb hat2165h RJK065 RJK5020DPK RJK0456D HA16174
    Text: April 2010 Renesas Electronics High-speed and Low Ron Series Power MOSFETs for Synchronous Rectification of AC/DC Converter Features Low ON resistance Low input capacitance Low Qg High avalanche destruction tolerance High diode destruction tolerance Application Equipment


    Original     		HA16174 HA16158 HA16341 HA16342 HA16167 rjk5020 HAT2195WP pfcpwm H8N0801AB HA16167 rjk0305dpb hat2165h RJK065 RJK5020DPK RJK0456D HA16174 PDF

    rjh60f5

    Abstract: RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK
    Text: Rev.27.01 2010.2.2 Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation www.renesas.com Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation January 2010 Standard Product Business Group 2/2/2010 Rev.27.01 2010. Renesas Technology Corp., All rights reserved.


    Original     		REJ13G0003-2701 rjh60f5 RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK PDF

    ISL6258

    Abstract: Diode C1280 c1295 battery C2240 3A967 820-2179 U4900 u3150 OZ9956 g5551
    Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN SCHEM,MLB,M82 PVT 11/14/2007 ENG APPD DESCRIPTION OF CHANGE DATE DATE


    Original     		PDF

    e3 sot363 8pin

    Abstract: ISL9504 PP3V42G3H C8050 R5370 "cross reference" k50 apple NVIDIA G84m p66 apple M75 MLB 820-2101 051-7225
    Text: 8 6 7 2 3 4 5 CK APPD OROYA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ? 03/20/2007 - DVT


    Original     		01/17/2007ER ISL10 ISL11 e3 sot363 8pin ISL9504 PP3V42G3H C8050 R5370 "cross reference" k50 apple NVIDIA G84m p66 apple M75 MLB 820-2101 051-7225 PDF

    WPCT

    Abstract: 42W9347 lenovo AH308 lenovo t42 RES 51.1K .5W 1 RN65 Socket AM2 WPCT200 graphics card ati 0712E
    Text: 1 2 3 4 5 6 7 8 9 B C D E F G H J K A B C D E F G TITLE PAGE 47. EC HISTORY 48. CPU 1/3 49. CPU(2/3) 50. CPU(3/3) 51. ITP CON/LARGE PTH HOLE/EMI FINGER 52. CRESTLINE(1/7) : HOST I/F 53. CRESTLINE(2/7) : DDR2-A 54. CRESTLINE(3/7) : DDR2-B 55. CRESTLINE(4/7) : PEG/DMI


    Original     		L09906 42W9347 APR/10/2007 1/16W R1017 R1016 DTC115EE 1SS400G WPCT 42W9347 lenovo AH308 lenovo t42 RES 51.1K .5W 1 RN65 Socket AM2 WPCT200 graphics card ati 0712E PDF

    ISL9504

    Abstract: ntc 5D-7 PP3V42G3H U8950 ISL9504CRZ H8S2116 diode 76b2 ar9350 d61 6a-1 ISL6269
    Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MLB,M59 ZONE ECN A ENG APPD DESCRIPTION OF CHANGE 463525 PRODUCTION RELEASE


    Original     		PDF

    lenovo

    Abstract: D1582 Maxim MAX8774 42W7622 447e lenovo r500 Maxim MAX8744 lenovo t42 winbond* wpct200 EC055
    Text: CR-1 : @DESIGN.D3SDV SCH_1 :PAGE A B C D E F G H J K L M N DATE 20061220 EC NO. P PART Q NO. 42W7622 L11403 9 9 MLB-1 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. 25. 26. 27. 28. 29. 30. 31. 32. 33. 34. 35. 36. 37.


    Original     		L11403 42W7622 CON10K 1/16W DTC115EE 1SS400G R1251 42W7501 lenovo D1582 Maxim MAX8774 42W7622 447e lenovo r500 Maxim MAX8744 lenovo t42 winbond* wpct200 EC055 PDF

    C3979

    Abstract: 65a3 ISL9504 Apple K23 MLB c5296 77A5 PP3V42G3H 65C6 ar9350 PP3V42
    Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MLB,M59 ZONE ECN A ENG APPD DESCRIPTION OF CHANGE 463525 PRODUCTION RELEASE


    Original     		PDF

    JMB363

    Abstract: NR134 NC318 gs1117ax RTL8111C-GR CQ25A Asus HC45 38A infineon A2C20 NR137
    Text: 5 D C B A 3 2 1 2.0G M90V 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 4 2008_0519 BLOCK Diagram Power Sequence Main Clock-1


    Original     		1066MHz 1066MHz PCIEX16 AP60T03GH LM358 AP70T03GH JMB363 NR134 NC318 gs1117ax RTL8111C-GR CQ25A Asus HC45 38A infineon A2C20 NR137 PDF

    PP3V42G3H

    Abstract: apple J8000 ISL9504 NVIDIA G84m C4740 p66 apple C8050 apple computer ad30 ok 1500 3p3 C7103
    Text: 8 6 7 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 2 3 4 5 1 CK APPD SCHEM,MLB,MBP15 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ? 04/24/2007


    Original     		MBP15 ISL10 ISL11 PP3V42G3H apple J8000 ISL9504 NVIDIA G84m C4740 p66 apple C8050 apple computer ad30 ok 1500 3p3 C7103 PDF