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    RJK03 Search Results

    RJK03 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJK0302DPB Renesas Electronics Corporation N Channel Power MOSFET Visit Renesas Electronics Corporation
    RJK0352DSP-00#J0 Renesas Electronics Corporation N Channel Power MOSFET, SOP, /Embossed Tape Visit Renesas Electronics Corporation
    RJK0395DPA-00#J53 Renesas Electronics Corporation N Channel Power MOSFET Visit Renesas Electronics Corporation
    RJK0328DPB-01#J0 Renesas Electronics Corporation Silicon N Channel Power MOSFET Power Switching Visit Renesas Electronics Corporation
    RJK03B7DPA-00#J5A Renesas Electronics Corporation N Channel Power MOSFET, WPAK(3F), /Embossed Tape Visit Renesas Electronics Corporation
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    RJK03 Price and Stock

    Renesas Electronics Corporation RJK0355DSP-00-J0

    MOSFET N-CH 30V 12A 8SOP
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    DigiKey RJK0355DSP-00-J0 Reel 10,000 2,500
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    Component Electronics, Inc RJK0355DSP-00-J0 200
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    • 100 $0.87
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    Renesas Electronics Corporation RJK0353DPA-01-J0B

    MOSFET N-CH 30V 35A 8WPAK
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    DigiKey RJK0353DPA-01-J0B Cut Tape 10,000 1
    • 1 $2.73
    • 10 $1.765
    • 100 $2.73
    • 1000 $0.90135
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    Renesas Electronics Corporation RJK0391DPA-00-J5A

    MOSFET N-CH 30V 50A 8WPAK
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    DigiKey RJK0391DPA-00-J5A Reel 6,000 3,000
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    Chip 1 Exchange RJK0391DPA-00-J5A 3,333
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    Renesas Electronics Corporation RJK03M4DPA-00-J5A

    MOSFET N-CH 30V 35A 8WPAK
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    DigiKey RJK03M4DPA-00-J5A Cut Tape 6,000 1
    • 1 $2.39
    • 10 $1.534
    • 100 $2.39
    • 1000 $0.77044
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    RJK03M4DPA-00-J5A Digi-Reel 6,000 1
    • 1 $2.39
    • 10 $1.534
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    • 1000 $0.77044
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    RJK03M4DPA-00-J5A Reel 6,000 3,000
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    Renesas Electronics Corporation RJK03M5DPA-00-J5A

    MOSFET N-CH 30V 30A 8WPAK
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    DigiKey RJK03M5DPA-00-J5A Cut Tape 5,970 1
    • 1 $2.19
    • 10 $1.402
    • 100 $2.19
    • 1000 $0.69703
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    RJK03M5DPA-00-J5A Digi-Reel 5,970 1
    • 1 $2.19
    • 10 $1.402
    • 100 $2.19
    • 1000 $0.69703
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    RJK03M5DPA-00-J5A Reel 3,000 3,000
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    Find more RJK03 price and stock on Findchips.com

    RJK03 Datasheets (187)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RJK0301DPB Renesas Technology Transistor Mosfet N-CH 30V 60A 5LFPAK Original PDF
    RJK0301DPB-00#J0 Renesas Technology FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 60A 5-LFPAK Original PDF
    RJK0301DPB-00-J0 Renesas Technology Silicon N Channel Power MOS FET Power Switching Original PDF
    RJK0301DPB-02#J0 Renesas Electronics America Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 60A 5-LFPAK Original PDF
    RJK0301DPB-EL-E Renesas Technology Transistor Mosfet N-CH 30V 60A 5LFPAK T/R Original PDF
    RJK0302DPB Renesas Technology Transistor Mosfet N-CH 30V 50A 5LFPAK Original PDF
    RJK0302DPB-00#J0 Renesas Technology FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 50A 5-LFPAK Original PDF
    RJK0302DPB-00-J0 Renesas Technology Silicon N Channel Power MOS FET Power Switching Original PDF
    RJK0302DPB-EL-E Renesas Technology Transistor Mosfet N-CH 30V 50A 5LFPAK T/R Original PDF
    RJK0303DPB Renesas Technology Transistor Mosfet N-CH 30V 40A 5LFPAK Original PDF
    RJK0303DPB-00#J0 Renesas Technology FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 40A 5-LFPAK Original PDF
    RJK0303DPB-00-J0 Renesas Technology Silicon N Channel Power MOS FET Power Switching Original PDF
    RJK0304DPB Renesas Technology Transistor Mosfet N-CH 30V 35A 5LFPAK Original PDF
    RJK0304DPB-00#J0 Renesas Technology FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 35A 5-LFPAK Original PDF
    RJK0304DPB-00-J0 Renesas Technology Silicon N Channel Power MOS FET Power Switching Original PDF
    RJK0304DPB-EL-E Renesas Technology Transistor Mosfet N-CH 30V 35A 5LFPAK T/R Original PDF
    RJK0305DPB Renesas Technology Silicon N Channel Power MOS FET Power Switching Original PDF
    RJK0305DPB-00#J0 Renesas Technology FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 30A LFPAK Original PDF
    RJK0305DPB-00-J0 Renesas Technology Silicon N Channel Power MOS FET Power Switching Original PDF
    RJK0305DPB-02#J0 Renesas Electronics America Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 30A LFPAK Original PDF
    ...

    RJK03 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0348DPA 30V, 50A, 2.5m max. N Channel Power MOS FET High Speed Power Switching R07DS0912EJ0500 Rev.5.00 Mar 19, 2013 Features •       High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		RJK0348DPA R07DS0912EJ0500 PWSN0008DE-A PDF

    RJK03M2DPA

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03M2DPA 30V, 45A, 2.8mΩmax. N Channel Power MOS FET High Speed Power Switching R07DS0766EJ0200 Rev.2.00 Feb 12, 2013 Features •       High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		RJK03M2DPA R07DS0766EJ0200 PWSN0008DE-A RJK03M2DPA PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03M3DPA 30V, 40A, 3.9mΩmax. N Channel Power MOS FET High Speed Power Switching R07DS0767EJ0200 Rev.2.00 Feb 12, 2013 Features •       High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		RJK03M3DPA R07DS0767EJ0200 PWSN0008DE-A PDF

    RJK0354DSP

    Abstract: RJK0354DSP-00-J0
    Text: Preliminary Datasheet RJK0354DSP Silicon N Channel Power MOS FET Power Switching REJ03G1661-0200 Rev.2.00 Apr 05, 2010 Features •    Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 5.4 m typ. (at VGS = 10 V)


    Original     		RJK0354DSP REJ03G1661-0200 PRSP0008DD-D RJK0354DSP RJK0354DSP-00-J0 PDF

    RJK0301DPB

    Abstract: RJK0301DPB-00-J0 RJK0301DPB-00
    Text: RJK0301DPB Silicon N Channel Power MOS FET Power Switching REJ03G1338-0900 Rev.9.00 Apr 19, 2006 Features • • • • • High speed switching Capable of 4.5V gate drive Low drive current High density mounting Low on-resistance RDS on = 2.3 mΩ typ. (at VGS = 10 V)


    Original     		RJK0301DPB REJ03G1338-0900 PTZZ0005DA-A RJK0301DPB RJK0301DPB-00-J0 RJK0301DPB-00 PDF

    RJK0395DPA

    Abstract: RJK0395DPA-00-J53
    Text: RJK0395DPA Silicon N Channel Power MOS FET Power Switching REJ03G1786-0200 Rev.2.00 Apr 03, 2009 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 5.9 mΩ typ. (at VGS = 10 V)


    Original     		RJK0395DPA REJ03G1786-0200 PWSN0008DA-A RJK0395DPA RJK0395DPA-00-J53 PDF

    Untitled

    Abstract: No abstract text available
    Text: RJK0366DSP Silicon N Channel Power MOS FET Power Switching REJ03G1657-0301 Rev.3.01 Apr 24, 2008 Features • • • • Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 9.0 mΩ typ. (at VGS = 10 V) • Pb-free


    Original     		RJK0366DSP REJ03G1657-0301 PRSP0008DD-D PDF

    RJK0348DPA-00-J0

    Abstract: RJK0348DPA
    Text: RJK0348DPA Silicon N Channel Power MOS FET Power Switching REJ03G1643-0300 Rev.3.00 May 13, 2008 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 1.9 mΩ typ. (at VGS = 10 V)


    Original     		RJK0348DPA REJ03G1643-0300 PWSN0008DA-A RJK0348DPA-00-J0 RJK0348DPA PDF

    RJK0395DPA

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0395DPA Silicon N Channel Power MOS FET Power Switching REJ03G1786-0210 Rev.2.10 May 12, 2010 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 5.9 m typ. (at VGS = 10 V)


    Original     		RJK0395DPA REJ03G1786-0210 PWSN0008DC-A Channe9044 RJK0395DPA PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0365DPA-02 Silicon N Channel Power MOS FET Power Switching REJ03G1938-0110 Rev.1.10 May 21, 2010 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance


    Original     		RJK0365DPA-02 REJ03G1938-0110 PWSN0008DC-A Cha9044 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03M6DNS Silicon N Channel Power MOS FET Power Switching R07DS0771EJ0110 Rev.1.10 May 29, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 7.6 m typ. (at VGS = 10 V)


    Original     		RJK03M6DNS R07DS0771EJ0110 PWSN0008JB-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03M6DPA Silicon N Channel Power MOS FET Power Switching R07DS0772EJ0111 Rev.1.11 May 29, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 7.8 m typ. (at VGS = 10 V)


    Original     		RJK03M6DPA R07DS0772EJ0111 PWSN0008DC-B PDF

    Untitled

    Abstract: No abstract text available
    Text: RJK0369DSP Silicon N Channel Power MOS FET Power Switching REJ03G1662-0201 Rev.2.01 Apr 24, 2008 Features • • • • Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 12.0 mΩ typ. (at VGS = 10 V) • Pb-free


    Original     		RJK0369DSP REJ03G1662-0201 PRSP0008DD-D PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0390DPA Silicon N Channel Power MOS FET Power Switching REJ03G1823-0130 Rev.1.30 May 12, 2010 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 1.7 m typ. (at VGS = 10 V)


    Original     		RJK0390DPA REJ03G1823-0130 PWSN0008DC-A Channe9044 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03F6DNS R07DS0660EJ0200 Previous: REJ03G1916-0100 Rev.2.00 Feb 01, 2012 Silicon N Channel Power MOS FET Power Switching Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		RJK03F6DNS R07DS0660EJ0200 REJ03G1916-0100) PWSN0008JB-A PDF

    Untitled

    Abstract: No abstract text available
    Text: RJK0303DPB Silicon N Channel Power MOS FET Power Switching REJ03G1341-0600 Rev.6.00 Apr 19, 2006 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 3.1 mΩ typ. (at VGS = 10 V)


    Original     		RJK0303DPB REJ03G1341-0600 PTZZ0005DA-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0323JPD Silicon N Channel MOS FET High Speed Power Switching R07DS0334EJ0100 Rev.1.00 Apr 18, 2011 Features • • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 7.0 mΩ typ. Low drive current


    Original     		RJK0323JPD R07DS0334EJ0100 AEC-Q101 PRSS0004ZD-C PDF

    RJK0396DPA

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0396DPA Silicon N Channel Power MOS FET Power Switching REJ03G1787-0210 Rev.2.10 May 12, 2010 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 6.9 m typ. (at VGS = 10 V)


    Original     		RJK0396DPA REJ03G1787-0210 PWSN0008DC-A Channe9044 RJK0396DPA PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0329DPB-01 R07DS0265EJ0500 Previous: REJ03G1638-0400 Rev.5.00 Mar 01, 2011 Silicon N Channel Power MOS FET Power Switching Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		RJK0329DPB-01 R07DS0265EJ0500 REJ03G1638-0400) PTZZ0005DA-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0349DPA Silicon N Channel Power MOS FET Power Switching REJ03G1645-0210 Rev.2.10 May 12, 2010 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 2.4 m typ. (at VGS = 10 V)


    Original     		RJK0349DPA REJ03G1645-0210 PWSN0008DC-A Cha9044 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03N8DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0789EJ0100 Power Switching Rev.1.00 Feb 29, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		RJK03N8DNS R07DS0789EJ0100 PWSN0008JB-A PDF

    RJK03M0DPA

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03M0DPA Silicon N Channel Power MOS FET Power Switching R07DS0764EJ0110 Rev.1.10 May 28, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 1.6 m typ. (at VGS = 10 V)


    Original     		RJK03M0DPA R07DS0764EJ0110 PWSN0008DC-B RJK03M0DPA PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0364DPA-02 Silicon N Channel Power MOS FET Power Switching REJ03G1937-0110 Rev.1.10 May 21, 2010 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance


    Original     		RJK0364DPA-02 REJ03G1937-0110 PWSN0008DC-A Cha9044 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0381DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1829-0210 Power Switching Rev.2.10 May 13, 2010 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		RJK0381DPA REJ03G1829-0210 PWSN0008DC-A current9044 PDF