RJK03 Search Results

Contextual Info: Preliminary Datasheet RJK0348DPA 30V, 50A, 2.5m max. N Channel Power MOS FET High Speed Power Switching R07DS0912EJ0500 Rev.5.00 Mar 19, 2013 Features •       High speed switching Capable of 4.5 V gate drive Low drive current High density mounting

RJK03M2DPA

Contextual Info: Preliminary Datasheet RJK03M2DPA 30V, 45A, 2.8mΩmax. N Channel Power MOS FET High Speed Power Switching R07DS0766EJ0200 Rev.2.00 Feb 12, 2013 Features •       High speed switching Capable of 4.5 V gate drive Low drive current High density mounting

Contextual Info: Preliminary Datasheet RJK03M3DPA 30V, 40A, 3.9mΩmax. N Channel Power MOS FET High Speed Power Switching R07DS0767EJ0200 Rev.2.00 Feb 12, 2013 Features •       High speed switching Capable of 4.5 V gate drive Low drive current High density mounting

RJK0354DSP

Abstract: RJK0354DSP-00-J0
Contextual Info: Preliminary Datasheet RJK0354DSP Silicon N Channel Power MOS FET Power Switching REJ03G1661-0200 Rev.2.00 Apr 05, 2010 Features •    Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 5.4 m typ. (at VGS = 10 V)

RJK0301DPB

Abstract: RJK0301DPB-00-J0 RJK0301DPB-00
Contextual Info: RJK0301DPB Silicon N Channel Power MOS FET Power Switching REJ03G1338-0900 Rev.9.00 Apr 19, 2006 Features • • • • • High speed switching Capable of 4.5V gate drive Low drive current High density mounting Low on-resistance RDS on = 2.3 mΩ typ. (at VGS = 10 V)

RJK0395DPA

Abstract: RJK0395DPA-00-J53
Contextual Info: RJK0395DPA Silicon N Channel Power MOS FET Power Switching REJ03G1786-0200 Rev.2.00 Apr 03, 2009 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 5.9 mΩ typ. (at VGS = 10 V)

Contextual Info: RJK0366DSP Silicon N Channel Power MOS FET Power Switching REJ03G1657-0301 Rev.3.01 Apr 24, 2008 Features • • • • Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 9.0 mΩ typ. (at VGS = 10 V) • Pb-free

RJK0348DPA-00-J0

Abstract: RJK0348DPA
Contextual Info: RJK0348DPA Silicon N Channel Power MOS FET Power Switching REJ03G1643-0300 Rev.3.00 May 13, 2008 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 1.9 mΩ typ. (at VGS = 10 V)

RJK0395DPA

Contextual Info: Preliminary Datasheet RJK0395DPA Silicon N Channel Power MOS FET Power Switching REJ03G1786-0210 Rev.2.10 May 12, 2010 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 5.9 m typ. (at VGS = 10 V)

Contextual Info: Preliminary Datasheet RJK0365DPA-02 Silicon N Channel Power MOS FET Power Switching REJ03G1938-0110 Rev.1.10 May 21, 2010 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance

Contextual Info: Preliminary Datasheet RJK03M6DNS Silicon N Channel Power MOS FET Power Switching R07DS0771EJ0110 Rev.1.10 May 29, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 7.6 m typ. (at VGS = 10 V)

Contextual Info: Preliminary Datasheet RJK03M6DPA Silicon N Channel Power MOS FET Power Switching R07DS0772EJ0111 Rev.1.11 May 29, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 7.8 m typ. (at VGS = 10 V)

Contextual Info: RJK0369DSP Silicon N Channel Power MOS FET Power Switching REJ03G1662-0201 Rev.2.01 Apr 24, 2008 Features • • • • Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 12.0 mΩ typ. (at VGS = 10 V) • Pb-free

Contextual Info: Preliminary Datasheet RJK0390DPA Silicon N Channel Power MOS FET Power Switching REJ03G1823-0130 Rev.1.30 May 12, 2010 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 1.7 m typ. (at VGS = 10 V)

Contextual Info: Preliminary Datasheet RJK03F6DNS R07DS0660EJ0200 Previous: REJ03G1916-0100 Rev.2.00 Feb 01, 2012 Silicon N Channel Power MOS FET Power Switching Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting

Contextual Info: RJK0303DPB Silicon N Channel Power MOS FET Power Switching REJ03G1341-0600 Rev.6.00 Apr 19, 2006 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 3.1 mΩ typ. (at VGS = 10 V)

Contextual Info: Preliminary Datasheet RJK0323JPD Silicon N Channel MOS FET High Speed Power Switching R07DS0334EJ0100 Rev.1.00 Apr 18, 2011 Features • • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 7.0 mΩ typ. Low drive current

RJK0396DPA

Contextual Info: Preliminary Datasheet RJK0396DPA Silicon N Channel Power MOS FET Power Switching REJ03G1787-0210 Rev.2.10 May 12, 2010 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 6.9 m typ. (at VGS = 10 V)

Contextual Info: Preliminary Datasheet RJK0329DPB-01 R07DS0265EJ0500 Previous: REJ03G1638-0400 Rev.5.00 Mar 01, 2011 Silicon N Channel Power MOS FET Power Switching Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting

Contextual Info: Preliminary Datasheet RJK0349DPA Silicon N Channel Power MOS FET Power Switching REJ03G1645-0210 Rev.2.10 May 12, 2010 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 2.4 m typ. (at VGS = 10 V)

Contextual Info: Preliminary Datasheet RJK03N8DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0789EJ0100 Power Switching Rev.1.00 Feb 29, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting

RJK03M0DPA

Contextual Info: Preliminary Datasheet RJK03M0DPA Silicon N Channel Power MOS FET Power Switching R07DS0764EJ0110 Rev.1.10 May 28, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 1.6 m typ. (at VGS = 10 V)

Contextual Info: Preliminary Datasheet RJK0364DPA-02 Silicon N Channel Power MOS FET Power Switching REJ03G1937-0110 Rev.1.10 May 21, 2010 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance

Contextual Info: Preliminary Datasheet RJK0381DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1829-0210 Power Switching Rev.2.10 May 13, 2010 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting