RJK0208 Search Results

Contextual Info: Preliminary Datasheet RJK0208DPA 25 V, 65 A, 2.0 m max. Built in SBD N Channel Power MOS FET High Speed Power Switching R07DS0942EJ0300 Previous: REJ03G1924-0200 Rev.3.00 Nov 12, 2012 Features •       High speed switching Capable of 4.5 V gate drive

Contextual Info: Preliminary Datasheet RJK0208DPA 25V, 65A, 2.0m max. Built in SBD N Channel Power MOS FET High Speed Power Switching R07DS0942EJ0400 Rev.4.00 Mar 21, 2013 Features •       High speed switching Capable of 4.5 V gate drive Low drive current

Contextual Info: Preliminary Datasheet RJK0208DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1924-0200 Power Switching Rev.2.00 Apr 27, 2010 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting

RJK0208DPA

Abstract: RJK0208DPA-00#J53 RJK0208DPA-00-J53
Contextual Info: Preliminary Datasheet RJK0208DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1924-0200 Power Switching Rev.2.00 Apr 27, 2010 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting

RJH60F7

Abstract: rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652
Contextual Info: Solutions for Enhanced Power Management Power MOSFETs, TRIACs, Thyristors, and IGBTs System designs that save energy have valuable marketing advantages. Yet new products typically must deliver increasingly complex functionality and higher levels of performance — a combination that tends to