Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    RJK0208 Search Results

    RJK0208 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    RJK0208DPA-00#J5A Renesas Electronics Corporation P Channel Power MOSFET Visit Renesas Electronics Corporation
    RJK0208DPA-00#J53 Renesas Electronics Corporation P Channel Power MOSFET Visit Renesas Electronics Corporation

    RJK0208 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RJK0208DPA-00#J5A Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 25V 65A WPAK Original PDF

    RJK0208 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0208DPA 25 V, 65 A, 2.0 m max. Built in SBD N Channel Power MOS FET High Speed Power Switching R07DS0942EJ0300 Previous: REJ03G1924-0200 Rev.3.00 Nov 12, 2012 Features •       High speed switching Capable of 4.5 V gate drive


    Original     		PDF RJK0208DPA R07DS0942EJ0300 REJ03G1924-0200) PWSN0008DC-B

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0208DPA 25V, 65A, 2.0m max. Built in SBD N Channel Power MOS FET High Speed Power Switching R07DS0942EJ0400 Rev.4.00 Mar 21, 2013 Features •       High speed switching Capable of 4.5 V gate drive Low drive current


    Original     		PDF RJK0208DPA R07DS0942EJ0400 PWSN0008DE-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0208DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1924-0200 Power Switching Rev.2.00 Apr 27, 2010 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		PDF RJK0208DPA REJ03G1924-0200 PWSN0008DC-A current9044

    RJK0208DPA

    Abstract: RJK0208DPA-00#J53 RJK0208DPA-00-J53
    Text: Preliminary Datasheet RJK0208DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1924-0200 Power Switching Rev.2.00 Apr 27, 2010 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		PDF RJK0208DPA REJ03G1924-0200 PWSN0008DC-A Chann9044 RJK0208DPA RJK0208DPA-00#J53 RJK0208DPA-00-J53

    RJH60F7

    Abstract: rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652
    Text: Solutions for Enhanced Power Management Power MOSFETs, TRIACs, Thyristors, and IGBTs System designs that save energy have valuable marketing advantages. Yet new products typically must deliver increasingly complex functionality and higher levels of performance — a combination that tends to


    Original     		PDF RJP6085DPN O-220AB RJP6085DPK RJH6085BDPK RJH6086BDPK RJH6087BDPK RJH6088BDPK RJH60F7 rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652