RJH 30 A3 Search Results

A7K1

Contextual Info: L Z Z P S O L PS » REV. DATE W. M ft # DCN NO. M M CHK. * U APPD. NiM vya A 1 B/8-18U N EF-2A NOTE 1 13.65) hs : H D E S I G N A T I 0 N B - R J L 0 4 V S E R IE S 2/ ij - X Z RECEPTACLE . (N o om ^-^NOTE 3 (MIN. PERF. THD) 1 5 .9 h=- H ± 0.79

NE5217D

Contextual Info: Philips Sem iconductors Data C om m unications Products Product specification Postamplifier with link status indicator DESCRIPTION NE/SA5217 PIN CONFIGURATION The NE /S A5217 is a 75M Hz postam plifier system designed to accept low level high-speed signals. These signals are converted

RJH 30 a3

Contextual Info: CY7C269 CYPRESS SEMICONDUCTOR • CMOS for optimum speed/power • High speed commercial and military — 15-ns max set-up — 12-ns clock to output • Low power — 660 mW (commercial) — 770 mW (military) • On-chip diagnostic shift register — For serial observability and con­

Contextual Info: CY7C269 CYPRESS Features • CMOS for optimum speed/power • High speed commercial and military — 15-ns address set-up — 12-ns clock to output • Low power — 660 mW (commercial) — 770 mW (military) • On-chip edge-triggered registers — Ideal for pipelined micropro­

LC 7258

Abstract: 7C266 203CE
Contextual Info: CY7C266 / CYPRESS 8K x 8 Power-Switched and Reprogrammable PROM Features • TTL-compatible I/O • CMOS for optimum speed/power • Direct replacement for 27C64 EPROMs • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military)

DS1204U

Contextual Info: D S 1206 DALLAS SEMICONDUCTOR DS1206 Phantom Serial Interface Chip FEATURES PIN ASSIGNMENT • Minimum expense a d d -o n serial port NC : : 1 14 : v cc 2 13 : RST 12 : DQ 11 • Co nve rts stan d ard bytewi d e o rD R A M m e m o ry w ave­ form s into a 3 -w ire serial port

semiconductor c243

Abstract: C2432
Contextual Info: CY7C243 CY7C244 4Kx8 Reprogrammable PROM Features Functional Description • The CY7C243 and CY7C244 are high-performance 4K x 8 CMOS PROMs. The CY7C 243 and CY7C244 are packaged in 300-m il-wide and 600-mil-wide packages respectively. The re­ programmable packages are equipped with an erasure w in­

333Q

Abstract: 27C64 CY7C266 a50tb
Contextual Info: CY7C266 5 f C Y PR ESS 8K x 8 Power-Switched and Reprogrammable PROM Features • TTL-compatible I/O • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Direct replacement for 27C64

Contextual Info: CY7C243 CY7C244 Er - g 3 CYPRESS Features 4K X 8 Reprogrammable PROM • Capable o f withstanding greater than 2001V static discharge • CMOS for optimum speed/power • TTL-compatible I/O • Windowed for reprogrammability • Direct replacement for bipolar

7C261

Abstract: 7C261-25 C2612 CY7C263-45DC C2613 J-64 CY7C263-35DMB CY7C261 DIODE SMD W12 75 C261
Contextual Info: CYPRESS SEMIC ON DUC TOR MbE D BSfl^bbS □□Qb704 1 n C Y P CY7C261 CY7C263/CY7C264 CYPRESS SEMICONDUCTOR Features 8192 x 8 Power-Switched and Reprogrammable PROM • TTL-compatible I/O • Direct replacement for bipolar PROMs • CMOS for optimum speed/power

7C261

Abstract: 7c264
Contextual Info: CY7C261 CY7C263/CY7C264 WÈP CYPRESS 8K x 8 Power-Switched and Reprogrammable PROM floating-gate technology and byte-wide in­ telligent programming algorithms. The CY7C261, CY7C263, and CY7C264 are plug-in replacements for bipolar de­ vices and offer the advantages of lower

LC 7258

Abstract: AG04
Contextual Info: ^ CY7C266 SEMICONDUCTOR 8K x 8 PROM PowerSwitched and Reprogrammable Features • TTL-compatible I/O • CMOS for optimum speed/power • Direct replacement for 27C64 EPROMs • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military)

C2653

Abstract: C2659 C2652 CY7C265 SAAB
Contextual Info: CYPRESS SEMICO NDUCTOR 4bE D B 250^2 Q D 0 b 7 ci3 5 E3C YP ^ V - ^ - v b - z r ] mSÈÊÆ CYPRESS s? SEMICONDUCTOR CY7C265 8192 x 8 Registered PROM Features Functional Description • CMOS for optimum speed/power • Highspeed — 15psm ax. set-up — 12 ns clock to output

333Q

Abstract: CY7C269 C2692
Contextual Info: CY7C269 CYPRESS Features • • C M O S for optim um speed/pow er • H igh speed com m ercial and m ilitary — 15-ns ad dress set-up • — 12-ns clock to output • O n-chip d iagn ostic sh ift register — For serial ob servability and con ­ trollab ility o f the ou tpu t register

Contextual Info: CY7C265 CYPRESS 8K x 8 Registered PROM Features Functional D escription • CMOS for optimum speed/power • High speed commercial and military — 15 ns address set-up — 12 ns clock to output • Low power — 660 mW (commercial) — 770 mW (military)

Contextual Info: CY7B134 CY7B135 CY7B1342 F# CYPRESS 4K x 8 Dual-Port Static RAMs and 4K x 8 Dual-Port Static RAM with Semaphores Features Functional D escription • 0.8-micron BiCMOS for high performance T he CY7B134, CY7B135, and CY7B1342 are high-speed BiCMOS 4K x 8 dual-port

S-8324AXXM

Abstract: HA2010
Contextual Info: Contents Features. 1 A Block D iagram . 1 Selection G u id e .2

smd diode J476

Abstract: LP5 ELNA diode sy 170/2 smd J476 RJ3 Elna SYF-1A335M-RJ ELNA RE2 DCK-3R3E224U-E 10 micro farad 25 v electrolytic capacitor 22 35L CAPacitor
Contextual Info: TECHNICAL NOTETECHNICAL NOTE Certifications of of Quality Quality Management ManagementSystem System as (asofofJun. Jun.2007 2006) Certifications (Malaysia) ELNA-LELON ELECTRONICS (SUZHOU)ELECTRONICS CO., LTD. ELNA-LELON (China) (SUZHOU) CO., LTD. (China)

L6281

Abstract: Stepper driver board with L297 L6203 circuit L6201P Stepper driver board with L297 L6203 L297 used for 24V/ 5A DC motor CI L297 L6203 L6203 H bridge IC L6202 L6506
Contextual Info: L6201 - L6201P L6202 - L6203 Æ 7 SG S-TH O M SO N ^ 7#. R!ôll ^©li[L[i ÏIS3©R!l] êi DMOS FULL BRIDGE DRIVER PRELIMINARY DATA . SUPPLY VOLTAGE UP TO 42V • 5A MAX PEAK CURRENT (2A max. for L6201 . TOTAL RMS CURRENT UP TO L6201:1 A; L6202:1.5A; L6203/L6201 P:4A

smd diode J476

Abstract: 10 35L W1 RJ3 Elna smd 3528 led strip elna cerafine 10 micro farad 25 v electrolytic capacitor Elna ce 85 smd C475 ST T4 3570 431 SY4
Contextual Info: Certifications of Quality Management System as of Jun. 2006 Applicable Standard Certification Number Item Applicable Organization ELNA CO., LTD. SHIRAKAWA Tech. (Japan) ELNA TOHOKU CO., LTD. AOMORI Factory (Japan) ISO 9001 JP05/60268QA Aluminum electrolytic capacitors

Contextual Info: fax id: 5222 •= CYPRESS CY7C007 CY7C017 PRELIMINARY 32K x 8/9 Dual-Port Static RAM Fully asynchronous operation Automatic power-down Expandable data bus to 16/18 bits or more using Mas­ ter/Slave chip select when using more than one device On-chip arbitration logic

76139

Abstract: CY7B138 CY7B139
Contextual Info: CY7B138 CY7B139 CYPRESS 4K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features Functional Description • 0.8-micron BiCMOS for high performance • High-speed access — 15 ns com’l — 25 ns (mil) • Automatic power-down • Fully asynchronous operation

Contextual Info: IB M 1 1 M 1 6 7 3 0 B IB M 1 1 M 1 6 7 3 0 C 16M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • System Performance Benefits: - Buffered inputs except RAS, Data - Reduced noise (32 V ss/V qc pins) - 4 Byte Interleave enabled

7c024

Contextual Info: CY7C024/0241 CY7C025/0251 4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with Sem, Int, Busy Features Functional Description • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • 4K x 16 organization CY7C024 • 4K x 18 organization (CY7C0241)