RG TRANSISTOR Search Results

IRGS14B40L

Abstract: IRGS14 IC100
Contextual Info: IRGS14B40L PROVISIONAL INSULATED GATE BIPOLAR TRANSISTOR 14A, Voltage Clamped 400V IGBT Co l l ect o r G at e Rg Rg e D 2 P ak Em it te r MIN TYP MAX UNITS CONDITIONS VCL COLLECTOR - EMITTER CLAMPING VOLTAGE 370 400 430 V RG =1 kOhm , Ic =7A VECAV EMITTER - COLLECTOR AVALANCHE VOLTAGE

RG2 DIODE

Abstract: RG2T-12V RG2-L-12V RG1T-12V RG1-12V RG2-L-24V RG1T-L-12V RG2 -VF-3 RG2-12V RG2-L-5V
Contextual Info: RG HIGH FREQUENCY RG RELAYS WITH 1C AND 2C CONTACTS 25 .984 19 .748 10.4 .409 25 .984 23 .906 1 Form C 9.9 .390 RG-RELAYS • Excellent high frequency characteristics| Isolation: 65 dB min. at 900 MHz Insertion loss: 1.0 dB max. (at 900 MHz) • Wide selection

Matsua Miniature Relay s3 12v

Abstract: TUBE Light Choke Coil Winding schematic diagram 48v dc motor winding smd diode 748 36A 8 pin SMD ic 2068 experiment for process control of sequential timer using 3 relay RG2L manual voltage stabilizer transformer winding data Matsushita Miniature Relay s3 12v matsua rg2
Contextual Info: RG HIGH FREQUENCY RG RELAYS WITH 1C AND 2C CONTACTS 25 .984 19 .748 10.4 .409 25 .984 23 .906 1 Form C 9.9 .390 RG-RELAYS • Excellent high frequency characteristics| Isolation: 65 dB min. at 900 MHz Insertion loss: 1.0 dB max. (at 900 MHz) • Wide selection

KTA1268

Abstract: kta-1268 kta1268 transistor IC100 LOW VOLTAGE LOW NOISE AMPLIFIER IC KTC3200
Contextual Info: SEMICONDUCTOR KTA1268 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES ・Low Noise. : NF=3dB Typ. , Rg=100Ω, VCE=-6V, IC=-100 A, f=1kHz : NF=0.5dB(Typ.), Rg=1kΩ, VCE=-6V, IC=-100μA, f=1kHz.

Contextual Info: 2SA970 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA970 Low Noise Audio Amplifier Applications • Unit: mm Low noise : NF = 3dB (typ.) RG = 100 Ω, VCE = −6 V, IC = −100 µA, f = 1 kHz : NF = 0.5dB (typ.) RG = 1 kΩ, VCE = −6 V, IC = −100 µA,

2SA970 transistor

Abstract: 2sa970 equivalent TRANSISTOR 2Sa970 2SA970 2sa970 toshiba transistor 2sa970 toshiba 2SA970 TRANSISTOR its electrical voltages TOSHIBA Transistor Silicon PNP Epitaxial Type ALL 2sa970 2SA97
Contextual Info: 2SA970 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA970 Low Noise Audio Amplifier Applications • Unit: mm Low noise : NF = 3dB (typ.) RG = 100 Ω, VCE = −6 V, IC = −100 µA, f = 1 kHz : NF = 0.5dB (typ.) RG = 1 kΩ, VCE = −6 V, IC = −100 µA,

2SA970

Abstract: TRANSISTOR 2Sa970 2sA970 TRANSISTOR
Contextual Info: 2SA970 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA970 Low Noise Audio Amplifier Applications • Unit: mm Low noise: NF = 3dB (typ.) RG = 100 Ω, VCE = −6 V, IC = −100 A, f = 1 kHz : NF = 0.5dB (typ.) RG = 1 kΩ, VCE = −6 V, IC = −100 μA,

Contextual Info: 3 nV/√Hz, Low Power Instrumentation Amplifier AD8421 Data Sheet PIN CONNECTION DIAGRAM Medical instrumentation Precision data acquisition Microphone preamplification Vibration analysis Multiplexed input applications ADC driver 1 8 +VS RG 2 7 VOUT RG 3 6

2SA970 TRANSISTOR

Abstract: XL05 2SA970 2sa970 toshiba
Contextual Info: TOSHIBA 2SA970 2SA970 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS LO W NOISE AUDIO AM PLIFIER APPLICATIONS • Low Noise : NF = 3dB (Typ.) Rg = 100H, VCE= -6 V , Ie= -1 0 0 /;A , f=lkH z : NF = 0.5dB (Typ.) RG = lkO, VCE= -6 V , IC=-100^A> f=lkH z

2sa970 equivalent

Abstract: 2sa970 toshiba transistor 2SA970 2sa970 toshiba
Contextual Info: 2SA970 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA970 Low Noise Audio Amplifier Applications • Unit: mm Low noise :NF = 3dB (typ.) RG = 100 Ω, VCE = −6 V, IC = −100 A, f = 1 kHz : NF = 0.5dB (typ.) RG = 1 kΩ, VCE = −6 V, IC = −100 μA,

kta1268

Abstract: KTC3200 kta1268 transistor kta-1268 KTc3200 BL transistor ktc3200
Contextual Info: SEMICONDUCTOR KTA1268 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. HIGH VOLTAGE APPLICATION. B C FEATURES A ᴌLow Noise. A, f=1kHz : NF=3dB Typ. , Rg=100ή, VCE=-6V, IC=-100Ọ A, f=1kHz. : NF=0.5dB(Typ.), Rg=1kή, VCE=-6V, IC=-100Ọ

KTA1268

Abstract: NF05 kta1268 transistor
Contextual Info: K EC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTA1268 EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • Low Noise. : NF=3dB Typ. , Rg=100ß, V Ce=-6V , Ic=-100juA, f=lkHz : NF=0.5dB(Typ.), Rg=lk&, V Ce=-6V , Ic=-100j[/A, f=lkHz.

AD8421ARZ

Abstract: sensor switch design circuits AD8421ARMZ
Contextual Info: 3 nV/√Hz, Low Power Instrumentation Amplifier AD8421 Data Sheet Medical instrumentation Precision data acquisition Microphone preamplification Vibration analysis Multiplexed input applications ADC driver AD8421 –IN 1 8 +VS RG 2 7 VOUT RG 3 6 REF +IN 4

OF IGBT 300A 500V

Abstract: irgddn300m06 IGBT tail time C452 C451
Contextual Info: International Rectifier Provisional Data Sheet PD-9.1174 RG N300M06 RG RDN300M06 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT . Rugged Design • Simple gate-drive .Switching-Loss Rating includes all "tail“ losses • Short circuit rated

AD8220-EVAL

Abstract: AD8220
Contextual Info: JFET Instrumentation Amplifier Evaluation Board AD8220-EVAL FEATURES +VS APPLICATIONS 0.1µF +IN 4 +IN R1 –IN 8 +VS RG 3 + AD8220 RG 2 DUT – REF W1 0.1µF Characterize the AD8220 Interface the AD8220 with other evaluation tools Breadboard custom application circuits

Contextual Info: TOSHIBA 2SA970 2SA970 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm LO W NOISE AUDIO AM PLIFIER APPLICATIONS • Low Noise : NF = 3dB (Typ.) RG = 100H, V c e = - 6V, I c = - 1 0 0 /«A, f= lk H z : NF = 0.5dB (Typ.) RG = lk Ü , VCE= _ 6 V , I c = -1 0 0 ^ A , f= lk H z

Contextual Info: Micropower, Single- and Dual-Supply, Rail-to-Rail Instrumentation Amplifier AD627 FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM RG 1 –IN AD627 RG 2 7 +VS +IN 3 6 OUTPUT –VS 4 5 REF 00782-001 8 Figure 1. 8-Lead PDIP N and SOIC_N (R) 100 90 80 AD627 70

eeg using microcontroller

Abstract: AD627 AD627A AD627B OP113 Voltage to Current Converter dual 4-20mA scheme AD627BNZ k787
Contextual Info: Micropower, Single- and Dual-Supply, Rail-to-Rail Instrumentation Amplifier AD627 APPLICATIONS FUNCTIONAL BLOCK DIAGRAM RG 1 –IN AD627 8 RG 2 7 +VS +IN 3 6 OUTPUT –VS 4 5 REF Figure 1. 8-Lead PDIP N and SOIC_N (R) 100 90 80 AD627 70 CMRR (dB) 60 50 TRADITIONAL

Contextual Info: Micropower, Single- and Dual-Supply, Rail-to-Rail Instrumentation Amplifier AD627 Data Sheet FUNCTIONAL BLOCK DIAGRAM APPLICATIONS RG 1 –IN AD627 8 RG 2 7 +VS +IN 3 6 OUTPUT –VS 4 5 REF Figure 1. 8-Lead PDIP N and SOIC_N (R) 100 90 80 AD627 70 CMRR (dB)

AD8220

Abstract: AD8220ARMZ AD8615 AD8618 ADR435 MO-187-AA OP1177 OP2177 AD7685 1K-100K
Contextual Info: JFET Input Instrumentation Amplifier with Rail-to-Rail Output in MSOP Package AD8220 FEATURES PIN CONFIGURATION AD8220 1 8 +VS RG 2 7 VOUT RG 3 6 REF +IN 4 5 –VS 03579-005 –IN TOP VIEW Not to Scale Figure 1. 10n INPUT BIAS CURRENT (A) Low input currents

Contextual Info: JFET Input Instrumentation Amplifier with Rail-to-Rail Output in MSOP Package AD8220 PIN CONFIGURATION FEATURES AD8220 1 8 +VS RG 2 7 VOUT RG 3 6 REF +IN 4 5 –VS 03579-005 –IN TOP VIEW Not to Scale Figure 1. 10n INPUT BIAS CURRENT (A) 1n IBIAS 100p 10p

transistor jfet ecg

Abstract: electrocardiogram TA-104 AD8618 ADR435 MO-187-AA OP1177 OP2177 AD7685 AD8220
Contextual Info: JFET Input Instrumentation Amplifier with Rail-to-Rail Output in MSOP Package AD8220 FEATURES PIN CONFIGURATION AD8220 1 8 +VS RG 2 7 VOUT RG 3 6 REF +IN 4 5 –VS 03579-005 –IN TOP VIEW Not to Scale Figure 1. 10n INPUT BIAS CURRENT (A) 1n IBIAS 100p 10p

Contextual Info: Micropower, Single- and Dual-Supply, Rail-to-Rail Instrumentation Amplifier AD627 APPLICATIONS FUNCTIONAL BLOCK DIAGRAM RG 1 –IN AD627 8 RG 2 7 +VS +IN 3 6 OUTPUT –VS 4 5 REF Figure 1. 8-Lead PDIP N and SOIC_N (R) 100 90 80 AD627 70 CMRR (dB) 60 50 TRADITIONAL

RG2ET-12V

Abstract: RG2E-5V RG1ET RG2ET-L2-12V rg2et RG2ET-L2 RG1E-12V RG1ET-L2-12V RG1E RG2E
Contextual Info: RG HIGH FREQUENCY RG RELAYS WITH 1C AND 2C CONTACTS R G - R E U V Y S • Excellent high frequency characteristics! Isolation: 65 dB min. at 900 MHz Insertion loss: 1.0 dB max. (at 900 MHz) • Wide selection Characteristic impedance: 50 W type and 75 O type