L20-001-600
Abstract: No abstract text available
Text: TECHNICAL DATA SHEET CABLE ASSEMBLY RPC-N 75Ω PLUG/RPC-N 75Ω PLUG L20-001-XXX All dimensions are in mm; tolerances according to ISO 2768 c-H Available variants Type Length “A” mm Insertion loss ≤ (dB) at 4 GHz Weight (g) / pce L20-001-800 800 0.55
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L20-001-XXX
L20-001-800
L20-001-700
L20-001-600
L20-001-500
L20-001-300
216/U
P5S123-320S3
P5S123-320S3
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M17/223
Abstract: No abstract text available
Text: LLSB • Low Loss Air Frame, Shipboard, Ground Tactical Interconnect • Fire Retardant / Low Smoke (non-halogen) • Flexible For Easy Deployment / Routing Low Loss – Military/Aerospace Coax Attenuation vs. Frequency (Typical) 100.0 Features & Benefits
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LLSB-1200
M17/227)
LLSB-900
M17/226)
LLSB-600
M17/225)
LLSB-400
M17/223)
LLSB-240
M17/221)
M17/223
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souriau 8660
Abstract: MS90064-13 MS-900 810 souriau 8660-197 8660-2298E 8660-2485 8660-162 filotex 214 8660-1407
Text: souriau SB 600 Series Description Applications • rack and panel connector • high density up to 800 signal contacts • low insertion force contact design tapered pin, lif socket • sealed and unsealed versions • multiple polarizing positions • field replaceable thermoset inserts, featuring
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QQ-A-591
M22520/5-37B
M22520/5-43B
8660-D21-100-01A/05)
M22520/1
M22520/5
M22520/13
M81969/1
M81969/1-02)
souriau 8660
MS90064-13
MS-900
810 souriau
8660-197
8660-2298E
8660-2485
8660-162
filotex 214
8660-1407
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M39012
Abstract: 227-1221-25 MIL-C-39012 82-4460 RG 393 cable amphenol plugs 350503
Text: Amphenol SC Specifications ELECTRICAL 50 Ohm constant 0-11 GHz, 1500 V typ. 1000 volts peakd 3000 volts RMS Mating 11/16-24 UNEF screw threads. Plug coupling nut has safety wire holes. Cable Affixment Crimp-crimp: hex-crimp jacket, braid, center con tact per MIL-C-39012
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MIL-C-39012
M39012/
M39012
227-1221-25
MIL-C-39012
82-4460
RG 393 cable
amphenol plugs
350503
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AD8351S
Abstract: etc1-1-13 80MHZ AD6645 AD8350 AD8351 AD8351ARM AD8351ARM-REEL7 AD8351-EVAL RM-10
Text: Low Distortion Differential RF/IF Amplifier AD8351 FEATURES –3 dB Bandwidth of 2.2 GHz for AV = 12 dB Single Resistor Programmable Gain 0 dB £ AV £ 26 dB Differential Interface Low Noise Input Stage 2.7 nV/÷Hz @ AV = 10 dB Low Harmonic Distortion –79 dBc Second @ 70 MHz
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AD8351
10-Lead
MO-187BA
3/03--Data
AD8351S
etc1-1-13
80MHZ
AD6645
AD8350
AD8351
AD8351ARM
AD8351ARM-REEL7
AD8351-EVAL
RM-10
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Untitled
Abstract: No abstract text available
Text: Amphenol C, HN, SC C, HN, SC Description Amphenol C connectors are medium size and weatherproof. Coupling is two-stud bayonet lock. C connectors provide constant 50 ohm impedance. They may be used with 75 ohm cable, at lower frequencies below 300 MHz where no serious mismatch is introduced.
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MIL-C-39012
M39012/
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12V ENERGY LIGHT CIRCUIT DIAGRAM
Abstract: AD8351S 80MHZ AD6645 AD8350 AD8351 AD8351ARM AD8351ARM-REEL7 AD8351-EVAL ETC1-1-13
Text: Low Distortion Differential RF/IF Amplifier AD8351 FEATURES –3 dB Bandwidth of 2.2 GHz for AV = 12 dB Single Resistor Programmable Gain 0 dB £ AV £ 26 dB Differential Interface Low Noise Input Stage 2.7 nV/÷Hz @ AV = 10 dB Low Harmonic Distortion –79 dBc Second @ 70 MHz
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AD8351
10-Lead
ETC1-1-13
RM-10)
C03145
MO-187BA
12V ENERGY LIGHT CIRCUIT DIAGRAM
AD8351S
80MHZ
AD6645
AD8350
AD8351
AD8351ARM
AD8351ARM-REEL7
AD8351-EVAL
ETC1-1-13
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G30N60B3
Abstract: HGTG30N60B3 LD26 TA49170
Text: HGTG30N60B3 Data Sheet January 2000 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
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HGTG30N60B3
HGTG30N60B3
150oC.
150oC
G30N60B3
LD26
TA49170
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AD8351S
Abstract: No abstract text available
Text: PRELIMINARY TECHNICAL DATA Low Distortion Differential RF/IF Amplifier AD8351 Preliminary Technical Data FEATURES –3 dB Bandwidth of 2.2 GHz for AV = 12 dB Single Resistor Programmable Gain 0 dB ≤ AV ≤ 26 dB Differential Interface Low Noise Input Stage 2.7 nV/√Hz @ AV = 10 dB
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10-Lead
AD8351
ETC1-1-13
ETC1-1-13
RM-10)
MO-187BA
C03145
AD8351S
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AD8351S
Abstract: No abstract text available
Text: PRELIMINARY TECHNICAL DATA Low Distortion Differential RF/IF Amplifier AD8351 Preliminary Technical Data FEATURES –3 dB Bandwidth of 2.2 GHz for AV = 12 dB Single Resistor Programmable Gain 0 dB ≤ AV ≤ 26 dB Differential Interface Low Noise Input Stage 2.7 nV/√Hz @ AV = 10 dB
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10-Lead
AD8351
ETC1-1-13
ETC1-1-13
RM-10)
MO-187BA
C03145
AD8351S
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AD8351ARM-R2
Abstract: AD8351S AD8351ARM-REEL7 AD8351-EVAL ETC1-1-13 RM-10 AD6645 AD8350 AD8351 AD8351ARM
Text: Low Distortion Differential RF/IF Amplifier AD8351 FEATURES –3 dB Bandwidth of 2.2 GHz for AV = 12 dB Single Resistor Programmable Gain 0 dB ≤ AV ≤ 26 dB Differential Interface Low Noise Input Stage 2.7 nV/√Hz @ AV = 10 dB Low Harmonic Distortion –79 dBc Second @ 70 MHz
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AD8351
10-Lead
3/03--Data
AD8351ARM-R2
AD8351S
AD8351ARM-REEL7
AD8351-EVAL
ETC1-1-13
RM-10
AD6645
AD8350
AD8351
AD8351ARM
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Untitled
Abstract: No abstract text available
Text: Low Distortion Differential RF/IF Amplifier AD8351 FEATURES –3 dB Bandwidth of 2.2 GHz for AV = 12 dB Single Resistor Programmable Gain 0 dB ≤ AV ≤ 26 dB Differential Interface Low Noise Input Stage 2.7 nV/√Hz @ AV = 10 dB Low Harmonic Distortion –79 dBc Second @ 70 MHz
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AD8351
10-Lead
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g30n60b3
Abstract: G30N60 HGTG30N60B3 TA49170 HGTG30N60B3D LD26 DIODE B2 IC2560
Text: HGTG30N60B3 Data Sheet August 2003 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
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HGTG30N60B3
HGTG30N60B3
150oC.
150oC
g30n60b3
G30N60
TA49170
HGTG30N60B3D
LD26
DIODE B2
IC2560
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g30n60b3
Abstract: HGTG30N60B3
Text: HGTG30N60B3 Data Sheet December 2001 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
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HGTG30N60B3
HGTG30N60B3
150oC.
TA49170.
g30n60b3
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G30N60B3
Abstract: GE 443 HGTG30N60B3 HGTG30N60B3D LD26 TA49170
Text: HGTG30N60B3 Data Sheet December 2001 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
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HGTG30N60B3
HGTG30N60B3
150oC.
150oC
G30N60B3
GE 443
HGTG30N60B3D
LD26
TA49170
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R282
Abstract: No abstract text available
Text: TECHNICAL DATA Page R185.177.000 RIGHT ANGLE PLUG CRIMP TYPE CABLE 11/50 D 50 NOMINAL IMPEDANCE 0-7.5 FREQUENCY RANGE n V.S.W.R # + CABLES :KX 13 RG 214 RG 225 RG 393 GHz O x F GHz Maxi 0.05 RF INSERTION LOSS 7-16 8ERIE8 -55/+155 •c TEMPERATURE RATING VF(GHz) dB Maxi
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0108D00
M22520/5-01)
R282
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485EN
Abstract: R185237000
Text: TECHNICAL DATA Page 1 I 2 R185.237.000 STRAIGHT JACK CRIMP TYPE CABLE 11/50 D 7-16 8ERIE8 24 / 2 plats 50 NOMINAL IMPEDANCE 0-7.5 FREQUENCY RANGE CABLES :KX 13 RG 214 RG 225 RG 393 GHz -55/+155 *c TEMPERATURE RATING V.S.W.R n 1.20 + x F GHz Maxi 0.05 RF INSERTION LOSS
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9944D00
M22520/5-01)
485EN
R185237000
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Untitled
Abstract: No abstract text available
Text: TECHNICAL R185.237.000 Page DATA STRAIGHT JACK CRIMP TYPE CABLE 11/50 D 1 /2 7-16 SERIES 24 / 2 plats 50 NOMINAL IMPEDANCE 0-7.5 FREQUENCY RANGE TEMPERATURE RATING -55/+155 X + 1 O C \J V.S.W.R 0.05 RF INSERTION LOSS \[f CABLES : KX 13 a GHz RG 214 RG 225
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M22520/5-01)
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R282
Abstract: No abstract text available
Text: TECH N ICAL DATA Page 1 I 2 R161.186.137 RIGHT ANGLE PLUG CRIMP TYPE CABLE 11/50 D N 8ERIE 8 -DIA 0.449 011.4 NOMINAL IMPEDANCE 50 FREQUENCY RANGE 0 -1 1 TEMPERATURE RATING V.S.W.R -5 5 /+ 1 5 5 1 .1 5 # + RF INSERTION LOSS CABLES :KX 13 n RG 214 RG 225
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708/flats
18/plats)
2x20W
9808E02
M22520/5-01
R282
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Radiall r141
Abstract: No abstract text available
Text: TECHNICAL DATA Page R141.219.000 STRAIGHT JACK CLAMP TYPE GABLE 10+11/50 50 NOMINAL IMPEDANCE 0-4 FREQUENCY RANGE 8ERIE8 1.2 + KX RG RG RG RG GHz X F GHz Maxi 0.1 RF INSERTION LOSS Veff Maxi DIELECTRIC WITHSTANDING VOLTAGE 1500 Veff Mini INSULATION RESISTANCE
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9843A00
Radiall r141
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R185.010.000
Abstract: 0151F00
Text: TECHNICAL DATA Page R185.010.000 STRAIGHT PLUG CLAMP TYPE GABLE 10 +11/50 Hex 1.063 flats NOMINAL IMPEDANCE 50 FREQUENCY RANGE 0-7.5 TEMPERATURE RATING V.S.W.R -55/+155 1.20 + RF INSERTION LOSS 1 I 2 7-16 8 E R IE 8 0.866 I 2 flats CABLES :KX 13 n KX RG RG
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0151F00
R185.010.000
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9812E-01
Abstract: R282 R161186000 R161.186.000
Text: TECH N ICAL DATA Page 1 I 2 R161.186.000 RIGHT ANGLE PLUG CRIMP TYPE CABLE 11/50 D N 8ERIE 8 □IA 0.295 -□IA 0.449 011.4 •1.480 (37.6) NOMINAL IMPEDANCE 50 FREQUENCY RANGE 0 -1 1 TEMPERATURE RATING -5 5 /+ 1 5 5 V.S.W.R 1 .9 0 + RF INSERTION LOSS CABLES :KX 13
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9812E01
M22520/5-01
9812E-01
R282
R161186000
R161.186.000
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ACAT-B189
Abstract: MIL-C-22750
Text: Advanced Control Components 20 MERIDIAN ROAD EATONTOWN, N.J. 07724 PHONE: 732 460-0212 FAX: (732)460-0214 W WW.ADVANCED-CONTROL.COM Inc. PRODUCT SPECIFICATION PART NUMBER: ACAT-B189 DESCRIPTION: ATTENUATOR, VOLTAGE VARIABLE, 60 dB REV. FREQUENCY RANGE: INSERTION LOSS:
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ACAT-B189
ACAT-B189
MIL-C-22750
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Untitled
Abstract: No abstract text available
Text: Catalog 1307191 Revised 10-00 RF Coax Connectors O S P M iniature M odular Blind M ate C o n n ecto rs Features • Interface designed for multiple interconnects ■ For high performance microwave system requirements ■ Bulkhead or panel mount ■ For semi-rigid cable
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