RG 150 DIODE Search Results

RG 150 DIODE Result Highlights (5)

Part	Manufacturer	Description
CUZ30V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 30 V, USC
CUZ24V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 24 V, USC
CUZ36V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 36 V, USC
CUZ20V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 20 V, USC
CEZ6V8	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 6.8 V, ESC

RG 150 DIODE Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2120D Contextual Info: BSM 150 GB 170 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate • RG on,min = 10 Ohm Type VCE BSM 150 GB 170 DN2 1700V 220A IC Package Ordering Code HALF-BRIDGE 2 C67070-A2704-A67 Maximum Ratings	Original	C67070-A2704-A67 Oct-27-1997 2120D	PDF
C67070-A2704-A67 Contextual Info: BSM 150 GB 170 DN2 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate • RG on,min = 10 Ohm Type VCE IC BSM 150 GB 170 DN2 1700V 220A Package Ordering Code HALF-BRIDGE 2 C67070-A2704-A67	Original	C67070-A2704-A67 Aug-01-1996 C67070-A2704-A67	PDF
C67070-A2704-A67 Contextual Info: BSM 150 GB 170 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate • RG on,min = 10 Ohm Type VCE BSM 150 GB 170 DN2 1700V 220A IC Package Ordering Code HALF-BRIDGE 2 C67070-A2704-A67 Maximum Ratings	Original	C67070-A2704-A67 C67070-A2704-A67	PDF
Contextual Info: SQM25N15-52 www.vishay.com Vishay Siliconix Automotive N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 150 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.052 ID (A) • 100 % Rg and UIS Tested	Original	SQM25N15-52 AEC-Q101 O-263 SQM25N15-52-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A	PDF
Contextual Info: SQD25N15-52 www.vishay.com Vishay Siliconix Automotive N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 150 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.052 ID (A) • 100 % Rg and UIS Tested	Original	SQD25N15-52 AEC-Q101 O-252 O-252 SQD25N15-52-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Contextual Info: SQM25N15-52 www.vishay.com Vishay Siliconix Automotive N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 150 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.052 ID (A) • 100 % Rg and UIS Tested	Original	SQM25N15-52 AEC-Q101 O-263 O-263 SQM25N15-52-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A	PDF
Contextual Info: SQD25N15-52 www.vishay.com Vishay Siliconix Automotive N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 150 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.052 ID (A) • 100 % Rg and UIS Tested	Original	SQD25N15-52 AEC-Q101 O-252 SQD25N15-52-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
si3440 Abstract: Si3440DV Si3440DV-T1 SI3440DV-T1-E3 TSOP-6 .54 Contextual Info: Si3440DV Vishay Siliconix New Product N-Channel 150-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D PWM Optimized for Fast Switching In Small Footprint D 100% Rg Tested PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.375 @ VGS = 10 V 1.5 0.400 @ VGS = 6.0 V	Original	Si3440DV Si3440DV-T1--E3 S-32412--Rev. 24-Nov-03 si3440 Si3440DV-T1 SI3440DV-T1-E3 TSOP-6 .54	PDF
Contextual Info: SQM25N15-52 www.vishay.com Vishay Siliconix Automotive N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 150 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.052 ID (A) • 100 % Rg and UIS Tested	Original	SQM25N15-52 AEC-Q101 O-263 O-263 SQM25N15-52-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Contextual Info: SQD25N15-52 www.vishay.com Vishay Siliconix Automotive N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 150 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.052 ID (A) • 100 % Rg and UIS Tested	Original	SQD25N15-52 AEC-Q101 O-252 O-252 SQD25N15-52-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A	PDF
Contextual Info: DE150-201N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient	Original	DE150-201N09A 201N09 1100P	PDF
SUP90N15-18P Abstract: SUP90N15-18P-E3 Contextual Info: SUP90N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 150 0.018 at VGS = 10 V 90d 64 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT	Original	SUP90N15-18P O-220AB SUP90N15-18P-E3 08-Apr-05 SUP90N15-18P SUP90N15-18P-E3	PDF
SUP90N15-18P Abstract: SUP90N15-18P-E3 Contextual Info: SUP90N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 150 0.018 at VGS = 10 V 90d 64 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT	Original	SUP90N15-18P O-220AB SUP90N15-18P-E3 18-Jul-08 SUP90N15-18P SUP90N15-18P-E3	PDF
Contextual Info: SUD15N15-95 Vishay Siliconix N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 RDS(on) () ID (A) 0.095 at VGS = 10 V 15 0.100 at VGS = 6 V 15 • • • • TrenchFET Power MOSFETS 175 °C Junction Temperature 100 % Rg Tested	Original	SUD15N15-95 O-252 SUD15N15-95-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF

71641 Abstract: SUD15N15-95 Contextual Info: SUD15N15-95 Vishay Siliconix N-Channel 150-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.095 @ VGS = 10 V 15 0.100 @ VGS = 6 V 15 D TrenchFETr Power MOSFETS D 175_C Junction Temperature D 100% Rg Tested APPLICATIONS D Primary Side Switch	Original	SUD15N15-95 O-252 08-Apr-05 71641 SUD15N15-95	PDF
SUP90N15-18P Abstract: SUP90N15-18P-E3 Contextual Info: SUP90N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 150 0.018 at VGS = 10 V 90d 64 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT	Original	SUP90N15-18P O-220AB SUP90N15-18P-E3 11-Mar-11 SUP90N15-18P SUP90N15-18P-E3	PDF
Contextual Info: SUM75N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 150 0.018 at VGS = 10 V 75d 64 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch	Original	SUM75N15-18P O-263 SUM75N15-18P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
13.56mhz c class amp Abstract: ferrite core binocular air variable capacitor mp850 25.0 DE275-102N06A Contextual Info: DE275-102N06A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient	Original	DE275-102N06A 102N06A 13.56mhz c class amp ferrite core binocular air variable capacitor mp850 25.0 DE275-102N06A	PDF
nec 2401 Abstract: DE375-102N10A "RF MOSFETs" 400P Contextual Info: DE375-102N10A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient	Original	DE375-102N10A nec 2401 DE375-102N10A "RF MOSFETs" 400P	PDF
Contextual Info: SUM75N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 150 0.018 at VGS = 10 V 75d 64 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch	Original	SUM75N15-18P O-263 SUM75N15-18P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
81215 Abstract: si7620 Contextual Info: Si7620DN Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 150 0.126 at VGS = 10 V 13 9.5 nC • • • • Halogen-free TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested RoHS COMPLIANT APPLICATIONS	Original	Si7620DN Si7620DN-T1-GE3 11-Mar-11 81215 si7620	PDF
isoplus Abstract: transistor tl 187 780 AC 55N50F Contextual Info: HiPerRFTM Power MOSFETs IXFR 55N50F F-Class: MegaHertz Switching trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	55N50F 247TM E153432 405B2 isoplus transistor tl 187 780 AC 55N50F	PDF
475102N2 Abstract: 102n21 "RF MOSFETs" 1000 volt mosfet 400P DE475-102N21A volt21 Contextual Info: DE475-102N21A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	DE475-102N21A 30MHz 475102N2 102n21 "RF MOSFETs" 1000 volt mosfet 400P DE475-102N21A volt21	PDF
SUM75N15-18P-E3 Abstract: S-82349-Rev 75D diode Contextual Info: SUM75N15-18P Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 150 0.018 at VGS = 10 V 75d 64 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Primary Side Switch	Original	SUM75N15-18P O-263 SUM75N15-18P-E3 18-Jul-08 SUM75N15-18P-E3 S-82349-Rev 75D diode	PDF

RG 150 DIODE Search Results

RG 150 DIODE Result Highlights (5)

RG 150 DIODE Datasheets Context Search

2120D

C67070-A2704-A67

C67070-A2704-A67

si3440

SUP90N15-18P

SUP90N15-18P

71641

SUP90N15-18P

13.56mhz c class amp

nec 2401

81215

isoplus

475102N2

SUM75N15-18P-E3