2120D
Abstract: No abstract text available
Text: BSM 150 GB 170 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate • RG on,min = 10 Ohm Type VCE BSM 150 GB 170 DN2 1700V 220A IC Package Ordering Code HALF-BRIDGE 2 C67070-A2704-A67 Maximum Ratings
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Original
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C67070-A2704-A67
Oct-27-1997
2120D
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PDF
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C67070-A2704-A67
Abstract: No abstract text available
Text: BSM 150 GB 170 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate • RG on,min = 10 Ohm Type VCE BSM 150 GB 170 DN2 1700V 220A IC Package Ordering Code HALF-BRIDGE 2 C67070-A2704-A67 Maximum Ratings
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Original
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C67070-A2704-A67
C67070-A2704-A67
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PDF
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C67070-A2704-A67
Abstract: No abstract text available
Text: BSM 150 GB 170 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate • RG on,min = 10 Ohm Type VCE BSM 150 GB 170 DN2 1700V 220A IC Package Ordering Code HALF-BRIDGE 2 C67070-A2704-A67 Maximum Ratings
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Original
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C67070-A2704-A67
C67070-A2704-A67
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PDF
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C67070-A2704-A67
Abstract: No abstract text available
Text: BSM 150 GB 170 DN2 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate • RG on,min = 10 Ohm Type VCE IC BSM 150 GB 170 DN2 1700V 220A Package Ordering Code HALF-BRIDGE 2 C67070-A2704-A67
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Original
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C67070-A2704-A67
Aug-01-1996
C67070-A2704-A67
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PDF
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C67070-A2704-A67
Abstract: No abstract text available
Text: BSM 150 GB 170 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate • RG on,min = 10 Ohm Type VCE BSM 150 GB 170 DN2 1700V 220A IC Package Ordering Code HALF-BRIDGE 2 C67070-A2704-A67 Maximum Ratings
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Original
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C67070-A2704-A67
C67070-A2704-A67
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PDF
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Untitled
Abstract: No abstract text available
Text: SQ2325ES www.vishay.com Vishay Siliconix Automotive P-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) -150 RDS(on) () at VGS = -10 V 1.77 • TrenchFET power MOSFET • AEC-Q101 qualified ID (A) -0.84 • 100 % Rg and UIS tested Configuration
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Original
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SQ2325ES
AEC-Q101
OT-23
O-236)
SQ2325ES-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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Untitled
Abstract: No abstract text available
Text: SQM25N15-52 www.vishay.com Vishay Siliconix Automotive N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 150 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.052 ID (A) • 100 % Rg and UIS Tested
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Original
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SQM25N15-52
AEC-Q101
O-263
SQM25N15-52-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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Untitled
Abstract: No abstract text available
Text: SQD25N15-52 www.vishay.com Vishay Siliconix Automotive N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 150 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.052 ID (A) • 100 % Rg and UIS Tested
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Original
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SQD25N15-52
AEC-Q101
O-252
O-252
SQD25N15-52-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SQM25N15-52 www.vishay.com Vishay Siliconix Automotive N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 150 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.052 ID (A) • 100 % Rg and UIS Tested
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Original
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SQM25N15-52
AEC-Q101
O-263
O-263
SQM25N15-52-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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136B
Abstract: SUD25N15-52
Text: SUD25N15-52 Vishay Siliconix N-Channel 150-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.052 @ VGS = 10 V 25 0.060 @ VGS = 6 V 23 D D D D TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized 100% Rg Tested APPLICATIONS
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Original
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SUD25N15-52
O-252
SUD25N15-52--E3
S-40272--Rev.
23-Feb-04
136B
SUD25N15-52
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PDF
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SUD25N15-52
Abstract: No abstract text available
Text: SUD25N15-52 Vishay Siliconix N-Channel 150-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.052 @ VGS = 10 V 25 0.060 @ VGS = 6 V 23 D D D D TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized 100% Rg Tested APPLICATIONS
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Original
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SUD25N15-52
O-252
SUD25N15-52--E3
08-Apr-05
SUD25N15-52
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PDF
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SUM85N15-19
Abstract: SUM85N15-19-E3
Text: SUM85N15-19 Vishay Siliconix N-Channel 150-V D-S 175_C MOSFET FEATURES D D D D PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 150 0.019 @ VGS = 10 V 85 a TrenchFETr Power MOSFET 175_C Junction Temperature New Low Thermal Resistance Package 100% Rg Tested
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Original
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SUM85N15-19
O-263
SUM85N15-19-E3
S-32523--Rev.
08-Dec-03
SUM85N15-19
SUM85N15-19-E3
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PDF
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Untitled
Abstract: No abstract text available
Text: SUD25N15-52 Vishay Siliconix N-Channel 150-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized 100% Rg Tested rDS(on) (W) ID (A) 0.052 @ VGS = 10 V 25 D D D D 0.060 @ VGS = 6 V 23 APPLICATIONS
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Original
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SUD25N15-52
O-252
S-31724--Rev.
18-Aug-03
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PDF
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si3440
Abstract: No abstract text available
Text: Si3440DV Vishay Siliconix New Product N-Channel 150-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D PWM Optimized for Fast Switching In Small Footprint D 100% Rg Tested PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.375 @ VGS = 10 V 1.5 0.400 @ VGS = 6.0 V
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Original
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Si3440DV
Si3440DV-T1
S-31919--Rev.
15-Sep-03
si3440
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PDF
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si3440
Abstract: Si3440DV Si3440DV-T1 SI3440DV-T1-E3 TSOP-6 .54
Text: Si3440DV Vishay Siliconix New Product N-Channel 150-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D PWM Optimized for Fast Switching In Small Footprint D 100% Rg Tested PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.375 @ VGS = 10 V 1.5 0.400 @ VGS = 6.0 V
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Original
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Si3440DV
Si3440DV-T1--E3
S-32412--Rev.
24-Nov-03
si3440
Si3440DV-T1
SI3440DV-T1-E3
TSOP-6 .54
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PDF
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Untitled
Abstract: No abstract text available
Text: SQM25N15-52 www.vishay.com Vishay Siliconix Automotive N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 150 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.052 ID (A) • 100 % Rg and UIS Tested
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Original
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SQM25N15-52
AEC-Q101
O-263
O-263
SQM25N15-52-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SQD25N15-52 www.vishay.com Vishay Siliconix Automotive N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 150 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.052 ID (A) • 100 % Rg and UIS Tested
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Original
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SQD25N15-52
AEC-Q101
O-252
O-252
SQD25N15-52-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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SUM85N15-19
Abstract: SUM85N15-19-E3
Text: SUM85N15-19 Vishay Siliconix N-Channel 150-V D-S 175_C MOSFET FEATURES D D D D PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 150 0.019 @ VGS = 10 V 85 a TrenchFETr Power MOSFET 175_C Junction Temperature New Low Thermal Resistance Package 100% Rg Tested
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Original
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SUM85N15-19
O-263
SUM85N15-19-E3
08-Apr-05
SUM85N15-19
SUM85N15-19-E3
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PDF
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SI3440DV-T1-E3
Abstract: Si3440DV Si3440DV-T1
Text: Si3440DV Vishay Siliconix New Product N-Channel 150-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D PWM Optimized for Fast Switching In Small Footprint D 100% Rg Tested PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.375 @ VGS = 10 V 1.5 0.400 @ VGS = 6.0 V
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Original
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Si3440DV
Si3440DV-T1--E3
08-Apr-05
SI3440DV-T1-E3
Si3440DV-T1
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PDF
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Untitled
Abstract: No abstract text available
Text: Si4455DY Vishay Siliconix P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 • TrenchFET Power MOSFET RDS(on) () ID (A) 0.295 at VGS = - 10 V - 8.9c 0.315 at VGS = - 6 V 8.6c - Qg (Typ.) • 100% Rg and UIS Tested • Material categorization:
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Original
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Si4455DY
Si4455DY-T1-E3
Si4455DY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SQD25N15-52 www.vishay.com Vishay Siliconix Automotive N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 150 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.052 ID (A) • 100 % Rg and UIS Tested
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Original
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SQD25N15-52
AEC-Q101
O-252
SQD25N15-52-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
PDF
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SUD25N15-52
Abstract: No abstract text available
Text: SUD25N15-52 Vishay Siliconix N-Channel 150-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.052 @ VGS = 10 V 25 0.060 @ VGS = 6 V 23 D D D D TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized 100% Rg Tested APPLICATIONS
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Original
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SUD25N15-52
O-252
SUD25N15-52--E3
18-Jul-08
SUD25N15-52
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PDF
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Diode SV-06
Abstract: GE DIODE
Text: Rectifier Diodes L o w fre q u e n c y re c tify in g 3 P h a s e Brid ge Diode M odules Absolute Maximum Ratings Type No. 5-IOVT60f V rm lo [V ] [A ] 600 800 800 [V ] [A ] [#«A] [•c/w] Package Rg. -40-150 150 1.05 3.5 10 0.65 SV T 46 -40-150 150 1.05 3.5
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OCR Scan
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5-IOVT60f
D30VOOO
D30VC
Diode SV-06
GE DIODE
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PDF
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Untitled
Abstract: No abstract text available
Text: BIXYS IXGX 50N60AU1 HiPerFAST IGBT with Diode 600 V 75 A 2.7 V 275 ns CES ^C25 v* CE sat t'fi Preliminary data Maximum Ratings Symbol Test Conditions VC E S T j = 25cCto 150°C 600 V v CGR T,J = 25° C to 150° C; RG„L = 1 MQ 600 V VGES Continuous ±20
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OCR Scan
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50N60AU1
25cCto
O-247
50N80AU1
1999IXYS
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PDF
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