RG* INTEL Search Results

Contextual Info: M ic r o c h ip M T A 1 1 2 Intelligent Battery Management I.C. FEATURES BENEFITS • • • D ig ita lly in te g ra te s b a tte ry c h a rg e a n d d isch a rg e c u rre n t to p ro v id e an a ccu ra te s ta te o f ch a rg e in d ica ­ tio n . •

1SV147

Abstract: toshiba lable information
Contextual Info: 1SV 147 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 47 Unit in mm FM RADIO BAND TUNING APPLICATIONS. • • Low rg : rg = 0.30 Typ. Small Package q 5 5 MAX. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage

PDR32

Abstract: DTC 103 h8s 20203 R4F20203 H43B 20103 toP34
Contextual Info: APPLICATION NOTE H8S/20103, H8S/20203, and H8S/20223 Groups Using Timer RG and Port Output for Timing Pattern Controller Operation Introduction The event link controller ELC is used to set up the compare match A signal from the timer RG module in products of

pendolino

Abstract: alstom VG95234 metro train
Contextual Info: Series ITS and ITS-RG Glenair Series ITS and Series ITS-RG MIL-DTL-5015 Type Reverse Bayonet Connectors Application Examples Intro Pendolino: A New Angle on Rail Transport Like Hercule Poirot, Glenair Solves Another One on the Orient Express First developed and manufactured by Fiat,

Contextual Info: 2SA970 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA970 Low Noise Audio Amplifier Applications • Unit: mm Low noise : NF = 3dB (typ.) RG = 100 Ω, VCE = −6 V, IC = −100 µA, f = 1 kHz : NF = 0.5dB (typ.) RG = 1 kΩ, VCE = −6 V, IC = −100 µA,

2SA970 transistor

Abstract: 2sa970 equivalent TRANSISTOR 2Sa970 2SA970 2sa970 toshiba transistor 2sa970 toshiba 2SA970 TRANSISTOR its electrical voltages TOSHIBA Transistor Silicon PNP Epitaxial Type ALL 2sa970 2SA97
Contextual Info: 2SA970 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA970 Low Noise Audio Amplifier Applications • Unit: mm Low noise : NF = 3dB (typ.) RG = 100 Ω, VCE = −6 V, IC = −100 µA, f = 1 kHz : NF = 0.5dB (typ.) RG = 1 kΩ, VCE = −6 V, IC = −100 µA,

0X29

Abstract: 0X48 GPIO22 F75121R
Contextual Info: F75121 F75121R/RG Dynamic VID Control + 8 GPIO Datasheet Release Date: July, 2007 Revision: V0.24P F75121 V0.24P July, 2007 F75121 F75121R/RG Datasheet Revision History Version Date Page Revision History 0.20P Apr/2003 0.21P Oct/2003 6 0.22P Jan/2004 5-7 Revise pin name and pin description

2SA970 TRANSISTOR

Abstract: XL05 2SA970 2sa970 toshiba
Contextual Info: TOSHIBA 2SA970 2SA970 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS LO W NOISE AUDIO AM PLIFIER APPLICATIONS • Low Noise : NF = 3dB (Typ.) Rg = 100H, VCE= -6 V , Ie= -1 0 0 /;A , f=lkH z : NF = 0.5dB (Typ.) RG = lkO, VCE= -6 V , IC=-100^A> f=lkH z

2sa970 equivalent

Abstract: 2sa970 toshiba transistor 2SA970 2sa970 toshiba
Contextual Info: 2SA970 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA970 Low Noise Audio Amplifier Applications • Unit: mm Low noise :NF = 3dB (typ.) RG = 100 Ω, VCE = −6 V, IC = −100 A, f = 1 kHz : NF = 0.5dB (typ.) RG = 1 kΩ, VCE = −6 V, IC = −100 μA,

Contextual Info: Si7866DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0025 @ VGS = 10 V 29 0.00375 @ VGS = 4.5 V 25 TrenchFETr Power MOSFET Low rDS(on) PWM (Qgd and Rg) Optimized 100% Rg Tested APPLICATIONS

1SV228

Contextual Info: 1SV228 TOSHIBA 1 SV2 2 8 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ELECTRONIC TUNING APPLICATIONS OF FM RECEIVERS. • • Low rg : rg = 0.30 Typ. Small Package 2 .5 1. 5 + - + - 0.5 0.3 0 .25 0 .15 öo + I È3- MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: Si7868DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A) 0.00225 @ VGS = 10 V 29 D D D D 0.00275 @ VGS = 4.5 V 25 APPLICATIONS VDS (V) 20 TrenchFETr Power MOSFET Low rDS(on) PWM (Qgd and Rg) Optimized 100% Rg Tested

Si7868DP-T1

Abstract: Si7868DP
Contextual Info: Si7868DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A) 0.00225 @ VGS = 10 V 29 D D D D 0.00275 @ VGS = 4.5 V 25 APPLICATIONS VDS (V) 20 TrenchFETr Power MOSFET Low rDS(on) PWM (Qgd and Rg) Optimized 100% Rg Tested

Si7866DP

Abstract: Si7866DP-T1
Contextual Info: Si7866DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0025 @ VGS = 10 V 29 0.00375 @ VGS = 4.5 V 25 TrenchFETr Power MOSFET Low rDS(on) PWM (Qgd and Rg) Optimized 100% Rg Tested APPLICATIONS

Contextual Info: DS2436 PRELIMINARY DALLAS SEMICONDUCTOR FEATURES DS2436 Battery ID/Monitor Chip PACKAGE OUTLINE • O n -b o a rd A/D converter monitors battery voltage for e n d -o f-c h a rg e and e n d -o f-d isch a rg e determ ination • Eliminates therm istors by sensing battery tem pera­

Contextual Info: Si7864DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0035 @ VGS = 4.5 V 29 0.0047 @ VGS = 2.5 V 25 TrenchFETr Power MOSFETS: 2.5-V Rated Low 3.5-mW rDS(on) PWM (Qgd and Rg) Optimized 100% Rg Tested

Contextual Info: DS2436 PRELIMINARY DALLAS SEMICONDUCTOR FEATURES • O n -b o a rd A/D converter monitors battery voltage for e n d -o f-c h a rg e and e n d -o f-d isch a rg e determ ination DS2436 Battery ID/M onitor Chip PACKAGE OUTLINE PR35 PACKAGE • Eliminates therm istors by sensing battery tem pera­

D8243

Abstract: dallas nvram C900 DS2436 DS2436Z
Contextual Info: DS2436 PRELIMINARY DALLAS SEMICONDUCTOR FEATURES DS2436 Battery ID/Monitor Chip PACKAGE OUTLINE • O n -b o a rd A/D converter monitors battery voltage for e n d -o f-c h a rg e and e n d -o f-d is c h a rg e determ ination QE [IE 1 8 ZD 2 7 ZD NC DQ CLL

Contextual Info: TOSHIBA 2SA970 2SA970 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm LO W NOISE AUDIO AM PLIFIER APPLICATIONS • Low Noise : NF = 3dB (Typ.) RG = 100H, V c e = - 6V, I c = - 1 0 0 /«A, f= lk H z : NF = 0.5dB (Typ.) RG = lk Ü , VCE= _ 6 V , I c = -1 0 0 ^ A , f= lk H z

Contextual Info: D S 2436 PRELIMINARY DALLAS DS2436 Battery ID/Monitor Chip SEMICONDUCTOR FEATURES • O n -b o a rd A/D converter m onitors battery voltage for e n d -o f-c h a rg e and e n d -o f-d isch a rg e determ ination PACKAGE OUTLINE PR35 PACKAGE • Eliminates therm istors by sensing battery tem pera­

Contextual Info: Preliminary BENCHMARQ bq2018 Power Minder IC Features General Description >• M u ltif u n c tio n c h a rg e /d is c h a rg e co u n te r T he bq2018 is a low-cost charge/dis­ charge counter p eripheral packaged in a n 8-pin, 150-mil SOIC. It w orks w ith

C900

Abstract: DS2436 DS2436S PR35
Contextual Info: D S 2436 PRELIMINARY DALLAS DS2436 Battery ID/Monitor Chip SEMICONDUCTOR FEATURES • O n -b o a rd A/D converter m onitors battery voltage for e n d -o f-c h a rg e and e n d -o f-d isch a rg e determ ination PACKAGE OUTLINE PR35 PACKAGE • Eliminates therm istors by sensing battery tem pera­

ebm papst RG

Abstract: PA300 160NTD fans rG Series papst 120 220 Series 3 phase fan motor centrifugal fan
Contextual Info: DC centrifugal fan Series RG 160 NTD TURBOFAN 220 x 220 x 56 mm - General description: Particularly powerful DC fan with 3-phase EC drive and completely integrated operating electronics. For speed control regardless of load, with highly intelligent motor management

Q68000-A9108

Abstract: MPD2131 txvb IPD2133 MPD-2131
Contextual Info: Intelligente LED-Anzeigen Intelligent Displays 5 x 7 Punktm atrix 5 x 7 Dot matrix Parallel input Parallel input Type/ Color No. of characters Viewing angle x-/y-axis No. of dots per character Temperature range Features/ Applications Ordering code Rg- Character