RFS1003 Search Results

RFS1003 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
RFS 1003		Anadigics	Single-band power amplifiers		Original	PDF
RFS1003		Anadigics	5.1-5.9 GHz U-NII Power Amplifier		Original	PDF
RFS1003		RF Solutions	5.1-5.9 GHz U-NII Power Amplifier		Original	PDF

RFS1003 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
RFS1003 Contextual Info: Application Note RFS1003-AN1 Application Note for RFS1003 Evaluation Board Power Sequencing The RFS1003 power amplifier is a GaAs MESFET PA and requires both a positive drain and negative (gate) voltage. Refer to the board layout diagram indicating voltage, ground and RF	Original	RFS1003-AN1 RFS1003	PDF
Contextual Info: RFS1003 5.1-5.9 GHz U-NII Power Amplifier 2 GND N/C VD2 1 GND N/C VD1 The RFS1003 power amplifier is a high-power, highperformance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 GHz frequency band. With a P1dB of 29 dBm, the device is ideal as a	Original	RFS1003 RFS1003 WLAN/802 11a/HIPERLAN/2	PDF
RFS1003 Abstract: 5850MHZ Contextual Info: RFS1003 5.1-5.9 GHz U-NII Power Amplifier Product Description Applications The RFS1003 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 GHz frequency band. With a P1dB of 29 dBm, the	Original	RFS1003 RFS1003 WLAN/802 11a/HIPERLAN/2 DRFS-1003-0DSH 5850MHZ	PDF
JESD 95-1, SPP-012 Contextual Info: RFS1003 5.1-5.9 GHz U-NII Power Amplifier GND 3 RF IN 4 GND 5 N/C GND 2 VD2 N/C GND 1 VD1 N/C GND Product Description The RFS1003 power amplifier is a high-power, highperformance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 GHz frequency	Original	RFS1003 WLAN/802 11a/HIPERLAN/2 RFS1003 24-pin DRFS-1003-0DSH JESD 95-1, SPP-012	PDF
transistor 1654 Abstract: RFS1003 RF Solutions Contextual Info: Application Note RFS1003-AN1 Application Note for RFS1003 Evaluation Board Power Sequencing The RFS1003 power amplifier is a GaAs MESFET PA and requires both a positive drain and negative (gate) voltage. Refer to the board layout diagram indicating voltage, ground and RF connectors for proper connection. Proper power up and power	Original	RFS1003-AN1 RFS1003 ext4741 DRFS-1003-0AN1 transistor 1654 RF Solutions	PDF
3906 PNP TRANSISTOR Abstract: irlml6401tr LMK316BJ475KL MAX881 AN-0002 MAX881R RFS1003 RFS1006 AN0002 "Dual PNP Transistor" temperature compensation Contextual Info: MESFET Amplifier Biasing AN-0002 Biasing Circuits and Considerations for GaAs MESFET Power Amplifiers Summary In order to properly use any amplifier it is necessary to provide the correct operating environment, especially the DC bias. This application note outlines some of the considerations for biasing MESFET	Original	AN-0002 3906 PNP TRANSISTOR irlml6401tr LMK316BJ475KL MAX881 AN-0002 MAX881R RFS1003 RFS1006 AN0002 "Dual PNP Transistor" temperature compensation	PDF