RFP4N100 Search Results

RFP4N100 Price and Stock

Filter by Manufacturer


onsemi RFP4N100 MOSFET N-CH 1000V 4.3A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RFP4N100	Tube			50	1 - 10 - 100 $2.7834 1000 $2.7834 10000 $2.7834	Buy Now
Harris Semiconductor RFP4N100 POWER FIELD-EFFECT TRANSISTOR, 4.3A I(D), 1000V, 3.5OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	RFP4N100		47			1 $16.3125 10 $14.5 100 $13.4125 1000 $13.4125 10000 $13.4125	Buy Now

RFP4N100 Datasheets (6)

Part	Manufacturer	Description	Datasheet Type	PDF
RFP4N100	Fairchild Semiconductor	4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs	Original	PDF
RFP4N100	Fairchild Semiconductor	4.3A, 1000V, 3.500 ?, High Voltage, N-Channel Power MOSFETs	Original	PDF
RFP4N100	Harris Semiconductor	Power MOSFET Selection Guide	Original	PDF
RFP4N100	Intersil	4.3A, 1000V, 3.500 ?, High Voltage, N-Channel Power MOSFETs	Original	PDF
RFP4N100	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
RFP4N100	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF

RFP4N100 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
RF1S4N100SM Abstract: RFP4N100 TB334 Text: RFP4N100, RF1S4N100SM Data Sheet 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs August 1999 File Number 2457.4 Features • 4.3A, 1000V The RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect transistors. They are designed for use in applications such	Original	RFP4N100, RF1S4N100SM RFP4N100 RFP4N100SM TB334 TA09850. RF1S4N100SM TB334	PDF
f1s4n100 Abstract: No abstract text available Text: <^£.mi- 2onditctoi LPioducti, Una. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. RFP4N100, RF1S4N100SM 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs The RFP4N100 and RFP4N100SM are N-Channel	Original	RFP4N100, RF1S4N100SM RFP4N100 RFP4N100SM 00A/US f1s4n100	PDF
RFP4N100 Abstract: RF1S4N100SM TB334 Text: RFP4N100, RF1S4N100SM Data Sheet 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs The RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect transistors. They are designed for use in applications such as switching regulators, switching converters, motor	Original	RFP4N100, RF1S4N100SM RFP4N100 RFP4N100SM -55oC 150oC TB334 RF1S4N100SM TB334	PDF
RF1S4N100SM Abstract: RFP4N100 TB334 Text: RFP4N100, RF1S4N100SM Data Sheet Title FP4 00, P4 00S bt 3A, 00V, 00 m, gh lte, Cha el wer OST utho eyrds ter- August 1999 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs Features The RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect	Original	RFP4N100, RF1S4N100SM RFP4N100 RFP4N100SM -55oC 150oC RF1S4N100SM TB334	PDF
back-to-back scr drivers Abstract: No abstract text available Text: FOD420, FOD4208, FOD4216, FOD4218 6-Pin DIP Triac Drivers Features Description • 300mA on-state current The FOD420, FOD4208, FOD4216 and FOD4218 devices consist of an infrared emitting diode coupled to a hybrid random phase triac formed with two inverse	Original	FOD420, FOD4208, FOD4216, FOD4218 300mA back-to-back scr drivers	PDF
fqp60n06 Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier	Original	STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640	PDF
MOC3011 equivalent Abstract: TRIAC FT 12 FKPF12N80 triac drive circuit thyristor 6-pulse full wave firing circuit FOD4208 Triac 1000 watt FOD420 FOD4216 FOD4218 Text: FOD420, FOD4208, FOD4216, FOD4218 6-Pin DIP Triac Drivers Features Description • 300mA on-state current The FOD420, FOD4208, FOD4216 and FOD4218 devices consist of an infrared emitting diode coupled to a hybrid random phase triac formed with two inverse	Original	FOD420, FOD4208, FOD4216, FOD4218 300mA FOD4216 MOC3011 equivalent TRIAC FT 12 FKPF12N80 triac drive circuit thyristor 6-pulse full wave firing circuit FOD4208 Triac 1000 watt FOD420 FOD4218	PDF
how to interface optocoupler with triac Abstract: Optocoupler with triac Zero Crossing Triac Driver Output Optocoupler Phototriac zero voltage crossing OPTOCOUPLER trigger thyristor scr Switching diode 6pin inverse-parallel scr drive circuit Optocoupler with thyristor Optocoupler with triac circuits phototriac Text: MOC3061M, MOC3062M, MOC3063M, MOC3162M, MOC3163M 6-Pin DIP Zero-Cross Phototriac Driver Optocoupler 600 Volt Peak Features Description • Simplifies logic control of 115/240 VAC power The MOC306XM and MOC316XM devices consist of a GaAs infrared emitting diode optically coupled to a	Original	MOC3061M, MOC3062M, MOC3063M, MOC3162M, MOC3163M MOC306XM MOC316XM MOC316X-M) MOC306X-M) MOC306XM, how to interface optocoupler with triac Optocoupler with triac Zero Crossing Triac Driver Output Optocoupler Phototriac zero voltage crossing OPTOCOUPLER trigger thyristor scr Switching diode 6pin inverse-parallel scr drive circuit Optocoupler with thyristor Optocoupler with triac circuits phototriac	PDF
MOC3062M Abstract: No abstract text available Text: 6-PIN DIP ZERO-CROSS PHOTOTRIAC DRIVER OPTOCOUPLER 600V PEAK MOC3061-M MOC3062-M MOC3063-M MOC3162-M PACKAGE MOC3163-M SCHEMATIC ANODE 1 6 MAIN TERM. 6 6 5 NC* CATHODE 2 1 N/C 3 1 ZERO CROSSING CIRCUIT 4 MAIN TERM. *DO NOT CONNECT (TRIAC SUBSTRATE) 6 1 DESCRIPTION	Original	MOC3061-M MOC3062-M MOC3063-M MOC3162-M MOC3163-M MOC306X-M MOC316X-M MOC3062M	PDF
std2n52 Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232	Original	2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent	PDF
fod4116 Abstract: FOD4118 Text: FOD410, FOD4108, FOD4116, FOD4118 6-Pin DIP Zero-Cross Triac Drivers Features Description • 300mA on-state current The FOD410, FOD4108, FOD4116 and FOD4118 devices consist of an infrared emitting diode coupled to a hybrid triac formed with two inverse parallel SCRs which	Original	FOD410, FOD4108, FOD4116, FOD4118 300mA FOD4116 FOD4118	PDF
triac MOC3011 Abstract: No abstract text available Text: FOD420, FOD4208, FOD4216, FOD4218 6-Pin DIP Triac Drivers Features Description • 300mA on-state current The FOD420, FOD4208, FOD4216 and FOD4218 devices consist of an infrared emitting diode coupled to a hybrid random phase triac formed with two inverse	Original	FOD420, FOD4208, FOD4216, FOD4218 300mA FOD4216 triac MOC3011	PDF
IRF1830G Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Inﬁneon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23	Original	AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696	PDF
FQP630 Abstract: FQP27N25 FQP55N10 IRF630B FQP630 equivalent SFP9634 irf640b FDP6035L IRF620B SSP7N60A Text: Discrete MOSFET TO-220 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-220 N-Channel ISL9N302AP3 30 Single 0.0025 0.0033 - - 110 75 345 FDP8030L 30 Single 0.0035 0.0045	Original	O-220 O-220 ISL9N302AP3 FDP8030L ISL9N303AP3 FDP7045L ISL9N304AP3 FDP6676 FDP6670AL SFP9Z24 FQP630 FQP27N25 FQP55N10 IRF630B FQP630 equivalent SFP9634 irf640b FDP6035L IRF620B SSP7N60A	PDF

irf540n irf640 Abstract: IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460 Text: MOSFET Selection Trees Power MOSFET Products N-CHANNEL MOSFETs N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S	Original	BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 irf540n irf640 IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460	PDF
IRF540 complementary Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3	Original	RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR	PDF
triac drive circuit Abstract: No abstract text available Text: FOD420, FOD4208, FOD4216, FOD4218 6-Pin DIP Triac Drivers Features Description • 300mA on-state current The FOD420, FOD4208, FOD4216 and FOD4218 devices consist of an infrared emitting diode coupled to a hybrid random phase triac formed with two inverse	Original	FOD420, FOD4208, FOD4216, FOD4218 300mA triac drive circuit	PDF
MOC3062M Abstract: No abstract text available Text: 6-PIN DIP ZERO-CROSS PHOTOTRIAC DRIVER OPTOCOUPLER 600V PEAK MOC3061-M MOC3062-M MOC3063-M MOC3162-M PACKAGE MOC3163-M SCHEMATIC ANODE 1 6 MAIN TERM. 6 6 CATHODE 2 5 NC* 1 N/C 3 1 ZERO CROSSING CIRCUIT 4 MAIN TERM. *DO NOT CONNECT (TRIAC SUBSTRATE) 6 1 DESCRIPTION	Original	MOC3061-M MOC3062-M MOC3063-M MOC3162-M MOC3163-M MOC306X-M MOC316X-M MOC3062M	PDF
FOD4118 Abstract: No abstract text available Text: FOD410, FOD4108, FOD4116, FOD4118 6-Pin DIP Zero-Cross Triac Drivers Features Description • 300mA on-state current The FOD410, FOD4108, FOD4116 and FOD4118 devices consist of an infrared emitting diode coupled to a hybrid triac formed with two inverse parallel SCRs which	Original	FOD410, FOD4108, FOD4116, FOD4118 300mA	PDF
back-to-back scr drivers Abstract: fod4208 250VPP Text: FOD420, FOD4208, FOD4216, FOD4218 6-Pin DIP Triac Drivers Features Description • 300mA on-state current The FOD420, FOD4208, FOD4216 and FOD4218 devices consist of an infrared emitting diode coupled to a hybrid random phase triac formed with two inverse	Original	FOD420, FOD4208, FOD4216, FOD4218 300mA back-to-back scr drivers fod4208 250VPP	PDF
F1S4N100 Abstract: fp4n100 Text: intensi RFP4N100, RF1S4N100SM D ata S h e e t 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs The RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect transistors. They are designed for use in applications such	OCR Scan	RFP4N100, RF1S4N100SM RFP4N100 RFP4N100SM TA09850. TB334 RF1S4N100SM F1S4N100 fp4n100	PDF
FP4N100 Abstract: No abstract text available Text: RFP4N100 33 HARRIS August 1991 High Voltage N-Channel Enhancem ent-M ode Power Field-Effect Transistors Features Package T O -2 2 0 A B T O P V IE W • 4.3A, 1000V • rDS on = 3 .5 0 • UIS S O A Rating C u rve (Single Pulse) • - 5 5 ° C to + 1 5 0 °C O perating Tem perature	OCR Scan	RFP4N100 FP4N100	PDF
Untitled Abstract: No abstract text available Text: RFP4N100, RF1S4N100SM D ata S h eet 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs The RFP4N100 and RFP4N100SM are N-Channel enhancem ent mode silicon gate power field effect transistors. They are designed for use in applications such as switching regulators, switching converters, motor	OCR Scan	RFP4N100, RF1S4N100SM RFP4N100 RFP4N100SM TB334	PDF
4311 mosfet transistor Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r Text: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760	OCR Scan	2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r	PDF

Privacy Settings

RFP4N100 Search Results

RFP4N100 Price and Stock

onsemi RFP4N100

Harris Semiconductor RFP4N100

RFP4N100 Datasheets (6)

RFP4N100 Datasheets Context Search

RF1S4N100SM

f1s4n100

RFP4N100

RF1S4N100SM

back-to-back scr drivers

fqp60n06

MOC3011 equivalent

how to interface optocoupler with triac

MOC3062M

std2n52

fod4116

triac MOC3011

IRF1830G

FQP630

irf540n irf640

IRF540 complementary

triac drive circuit

MOC3062M

FOD4118

back-to-back scr drivers

F1S4N100

FP4N100

Untitled

4311 mosfet transistor