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onsemi RFP12N10L MOSFET N-CH 100V 12A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RFP12N10L	Tube	2,971		1	1 $1.74 10 $1.74 100 $1.74 1000 $0.53578 10000 $0.45075	Buy Now
Avnet Americas	RFP12N10L	Bulk		7 Weeks, 4 Days	1	1 $1.29 10 $1.03 100 $0.82 1000 $0.706 10000 $0.574	Buy Now
	RFP12N10L	Tube		17 Weeks	1,600	1 - 10 - 100 - 1000 - 10000 $0.42725	Buy Now
Mouser Electronics	RFP12N10L		2,121			1 $1.4 10 $0.773 100 $0.696 1000 $0.516 10000 $0.516	Buy Now
Verical	RFP12N10L		2,400		100	1 - 10 - 100 $0.8423 1000 $0.5927 10000 $0.5676	Buy Now
Arrow Electronics	RFP12N10L		1,448	17 Weeks	1	1 $0.7543 10 $0.7543 100 $0.642 1000 $0.4884 10000 $0.4306	Buy Now

Newark	RFP12N10L	Bulk	924		1	1 $0.656 10 $0.656 100 $0.601 1000 $0.555 10000 $0.555	Buy Now
Onlinecomponents.com	RFP12N10L		2,400			1 - 10 - 100 $0.6479 1000 $0.4559 10000 $0.418	Buy Now
TME	RFP12N10L		135		1	1 $0.88 10 $0.84 100 $0.61 1000 $0.57 10000 $0.57	Buy Now
Avnet Asia	RFP12N10L			17 Weeks	1,600	1 - 10 - 100 - 1000 - 10000 $0.45646	Buy Now
Avnet Silica	RFP12N10L		1,950	18 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	RFP12N10L		400	19 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	RFP12N10L		2,400			1 - 10 - 100 $0.6479 1000 $0.4559 10000 $0.418	Buy Now
New Advantage Corporation	RFP12N10L		300		1	1 - 10 - 100 - 1000 $0.8242 10000 $0.8242	Buy Now
Rochester Electronics LLC RFP12N18 N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RFP12N18	Bulk			260	1 - 10 - 100 - 1000 $1.15 10000 $1.15	Buy Now
Rochester Electronics LLC RFP12N06RLE N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RFP12N06RLE	Bulk			503	1 - 10 - 100 - 1000 $0.6 10000 $0.6	Buy Now
Aptina Imaging RFP12N10L Trans MOSFET N-CH Si 100V 12A Automotive 3-Pin(3+Tab) TO-220 Tube
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	RFP12N10L		1,440		12	1 - 10 - 100 $0.6438 1000 $0.4898 10000 $0.4318	Buy Now
Harris Semiconductor RFP12N06RLE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	RFP12N06RLE		10,315		3	1 - 10 $1.875 100 $0.7031 1000 $0.4875 10000 $0.4875	Buy Now
Quest Components	RFP12N06RLE		8,252			1 $2.5 10 $2.5 100 $2.5 1000 $2.5 10000 $0.55	Buy Now
Rochester Electronics	RFP12N06RLE		13,334		1	1 $0.5742 10 $0.5742 100 $0.5397 1000 $0.4881 10000 $0.4881	Buy Now

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RFP12N Datasheets (48)

Part	Manufacturer	Description	Datasheet Type	PDF
RFP12N06	Fairchild Semiconductor	17A, 60V, 0.071 ?, N-Channel, Logic Level UltraFET Power MOSFET	Original	PDF
RFP12N06RLE	Fairchild Semiconductor	17A, 60V, 0.071 ?, N-Channel, Logic Level UltraFET Power MOSFET	Original	PDF
RFP12N06RLE	Intersil	12A, 60V, 0.135 ?, N-Channel, Logic Level, Power MOSFETs	Original	PDF
RFP12N06RLE	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
RFP12N06RLE	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
RFP12N08	Intersil	12A, 80V and 100V, 0.200 ?, N-Channel Power MOSFETs	Original	PDF
RFP12N08	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
RFP12N08	General Electric	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 80V. Drain current RMS continuous 12A.	Scan	PDF
RFP12N08	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF
RFP12N08	International Rectifier	RF and BUZ Series Power MOSFETs - N-Channel	Scan	PDF
RFP12N08	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
RFP12N08	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
RFP12N08	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
RFP12N08L	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF

RFP12N08L	General Electric	N-channel logic level power field-effect transistor (LL FET). 80V, 12A.	Scan	PDF
RFP12N08L	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF
RFP12N08L	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
RFP12N10	Intersil	12A, 80V and 100V, 0.200 ?, N-Channel Power MOSFETs	Original	PDF
RFP12N10	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
RFP12N10	General Electric	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Drain current RMS continuous 12A.	Scan	PDF

RFP12N Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
12N6LE Abstract: 12n06rle 630E1 Text: RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE Data Sheet October 1999 File Number 2407.5 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title FD1 06R , D12 6RL M, P12 6RL bt A, V, 71 m, Packaging Features JEDEC TO-251AA JEDEC TO-252AA SOURCE DRAIN	Original	PDF	RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE O-251AA O-252AA RFD12N06RLE RFD12N06RLESM 12N6LE 12n06rle 630E1
f12n10l Abstract: f12n10 AN7254 AN7260 RFP12N10L TB334 Text: RFP12N10L Data Sheet April 2005 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET Features • 12A, 100V These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in applications such as	Original	PDF	RFP12N10L f12n10l f12n10 AN7254 AN7260 RFP12N10L TB334
12N6LE Abstract: 12n06rle AN9322 RFD12N06RLE RFD12N06RLESM RFP12N06RLE TB334 n06r 12N06 Text: [ /Title RFD1 2N06R LE, RFD12 N06RL ESM, RFP12 N06RL E /Subject (12A, 60V, 0.135 Ohm, NChannel, Logic Level, Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, NChannel, Logic Level, Power MOS- RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE Data Sheet	Original	PDF	2N06R RFD12 N06RL RFP12 RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE 12N6LE 12n06rle AN9322 RFD12N06RLE RFD12N06RLESM RFP12N06RLE TB334 n06r 12N06
F12N10L Abstract: f12n10 TA09526 Logic Level N-Channel Power MOSFET AN7254 AN7260 RFP12N10L TB334 Text: RFP12N10L Data Sheet July 1999 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET File Number Features • 12A, 100V These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in applications such as	Original	PDF	RFP12N10L F12N10L f12n10 TA09526 Logic Level N-Channel Power MOSFET AN7254 AN7260 RFP12N10L TB334
F12N10L Abstract: f12n10 Text: RFP12N10L Data Sheet Title FP1 10L bt A, 0V, 00 m, gic vel, Cha el wer OST utho July 1999 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET Features These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use	Original	PDF	RFP12N10L TA09526. F12N10L f12n10
12N6LE Abstract: 12n06rle 12N6L AN9321 AN9322 RFD12N06RLE RFD12N06RLESM RFD12N06RLESM9A RFP12N06RLE TB334 Text: RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE Data Sheet January 2002 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-251AA JEDEC TO-252AA SOURCE DRAIN GATE DRAIN FLANGE DRAIN (FLANGE) GATE SOURCE RFD12N06RLE RFD12N06RLESM	Original	PDF	RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE O-251AA O-252AA RFD12N06RLE RFD12N06RLESM O-220AB 12N6LE 12n06rle 12N6L AN9321 AN9322 RFD12N06RLE RFD12N06RLESM RFD12N06RLESM9A RFP12N06RLE TB334
F12N10L Abstract: f12n10 RFP12N10L RFP12N10L equivalent AN7254 AN7260 TB334 833ig Text: RFP12N10L Data Sheet January 2002 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET Features • 12A, 100V These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in applications such as	Original	PDF	RFP12N10L F12N10L f12n10 RFP12N10L RFP12N10L equivalent AN7254 AN7260 TB334 833ig
Untitled Abstract: No abstract text available Text: RFP12N10L October 2013 Data Sheet N-Channel Logic Level Power MOSFET 100 V, 12 A, 200 mΩ Features • 12A, 100V These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in applications such as	Original	PDF	RFP12N10L RFP12N10L
F12n10 Abstract: No abstract text available Text: RFP12N10L Data Sheet April 2005 Features 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET • 12A, 100V These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in applications such as	Original	PDF	RFP12N10L F12n10
cgs resistor Abstract: RFP12N08 rfm12 ic 6 pin diode n10 RFM12N08 RFM12N10 RFP12N10 TB334 833ig Text: RFM12N08, RFM12N10, RFP12N08, RFP12N10 Semiconductor Data Sheet 12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs [ /Title RFM12 These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such N08, RFM12 as switching regulators, switching converters, motor drivers,	Original	PDF	RFM12N08, RFM12N10, RFP12N08, RFP12N10 RFM12 RFP12 TA09594. RFM12N08 cgs resistor RFP12N08 rfm12 ic 6 pin diode n10 RFM12N08 RFM12N10 RFP12N10 TB334 833ig
RFP12N18 Abstract: RFP12N20 "Harris Corporation 1998" AN7254 RFM12N18 RFM12N20 TB334 RFM12 Text: [ /Title RFM12 N18, RFM12 N20, RFP12N 18, RFP12N 20 /Subject (12A, 180V and 200V, 0.250 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA, TO220AB) /Creator () /DOCIN RFM12N18, RFM12N20, RFP12N18, RFP12N20	Original	PDF	RFM12 RFP12N O204AA, O220AB) RFM12N18, RFM12N20, RFP12N18, RFP12N20 RFP12N18 RFP12N20 "Harris Corporation 1998" AN7254 RFM12N18 RFM12N20 TB334 RFM12
12n08 Abstract: rca application notes RFP12N10 pt 4115 TA9284 AN7260 AN7254 RFM12N08 RFM12N10 RFP12N08 Text: Standard Power MOSFETs RFM12N08, RFM12N10, RFP12N08, RFP12N10 File N um ber 1386 N-Channel Enhancernent-Mode Power Field-Effect Transistors 12 A, 80 and 100 V TdS o n ' 0.2 f i Features: • SOA is power-dissipation lim ited ■ Nanosecond switching speeds	OCR Scan	PDF	RFM12N08, RFM12N10, RFP12N08, RFP12N10 92CS-3374I RFM12N08 RFM12N10 RFP1I2N08 RFM12N18, 12n08 rca application notes pt 4115 TA9284 AN7260 AN7254 RFP12N08
f12n10l Abstract: f12N08L F12N08L FET RFP12N08L RFP12N10L f12n10 RFM12N08L f12n08 f12n "Voltage to Current Converter" Text: Logic-Level Power MOSFETs F ile N u m b e r IN RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L 151 N-Channel Logic Level Power Field-Effect Transistors L2 FET 12 A, 80 V and 100 V rD s(on ): 0.2 O Features: • Design optim ized for 5 volt gate drive ■ Can be driven dire ctly from Q-MOS, N-MOS, TTL C ircuits	OCR Scan	PDF	RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L 92CS-33741 RFM12N08L RFM12N10L RFP12N08L RFP12N10L* l92CS-37213 f12n10l f12N08L F12N08L FET f12n10 f12n08 f12n "Voltage to Current Converter"
Untitled Abstract: No abstract text available Text: 4302571 0 0 5 4 7 5 ‘ï LT? • HAS ÎH HARRIS RFD12N06RLE, RFD12N06RLESM U U RFP12N06RLE S E M , C O N D U C T O R January1994 N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistors MegaFETs Features Packages • 12A,60V • r DS(on) RFD12N06RLE (TO-251)	OCR Scan	PDF	RFD12N06RLE, RFD12N06RLESM RFP12N06RLE ary1994 RFD12N06RLE O-251) O-252) AN7254 AN-7260.

f12n10l Abstract: f12N08L F12N08L FET f12n10 f12n08 RFP12N08L RFM12N08L "Voltage to Current Converter" RFM12N10L RFP12N10L Text: 3875081 G E-" S O L I D S T A T E D 1 ^ F \| BflVSDfll D Glflim a r w / / Logic-Level Power MOSFETs - RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L	OCR Scan	PDF	01fl4Mfl RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L RFM12N08L RFM12N10L RFP12N08L RFP12N10L* f12n10l f12N08L F12N08L FET f12n10 f12n08 "Voltage to Current Converter"
F12N10L Abstract: f12n10 Text: RFP12N10L S e m iconductor April 1999 Data Sheet 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET • 12A, 100V RFP12N10L PACKAGE TO-22QAB • r DS ON = 0.200i2 • Design Optimized for 5V Gate Drives • Can be Driven Directly from QMOS, NMOS, TTL Circuits	OCR Scan	PDF	RFP12N10L O-22QAB 200i2 AN7254 AN7260 RFP12N101Test F12N10L f12n10
Untitled Abstract: No abstract text available Text: J W S RFM12N08, RFM12N10, RFP12N08, RFP12N10 S em iconductor October 1998 Data Sheet 12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,	OCR Scan	PDF	RFM12N08, RFM12N10, RFP12N08, RFP12N10 TB334 AN7254 AN7260.
RFP12N08 Abstract: TA9284 RFM12N08 RFM12N10 RFP12N10 Text: 3 8 7 5 0 8 1 G E S O L I D S T A T E 01 Standard Power M O S F E T s_ _ DE ,\| 3Ô 7 S Ü Û 1 DOlfllSB 1 \| _ RFM12N08, RFM12N10, RFP12N08, RFP12N10 File Number 1386 N-Channel Enhancement-Mode	OCR Scan	PDF	RFM12N08, RFM12N10, RFP12N08, RFP12N10 92cs-33t4i RFM12N08 RFM12N10 RFP12N08 RFP12N10 l3fl750fll TA9284
RFP12N20 Abstract: RFP12N18 RFM12N18 RFM12N20 Text: ^01 DE I 3fl7SGfll OOiaiiS? =1 3875081 G E S O L I D S T A T E 01E 18157 D Standard Power MOSFETs-:- - RFM12N18, RFM12N20, RFP12N18, RFP12N20 File N u m b e r	OCR Scan	PDF	RFM12N18, RFM12N20, RFP12N18, RFP12N20 92cs-33741 RFM12N18 RFM12N20 RFP12N18 RFP12N20*
Untitled Abstract: No abstract text available Text: w vys S RFM12N18, RFM12N20, RFP12N18, RFP12N20 Semiconductor y y 12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 12A, 180V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such	OCR Scan	PDF	RFM12N18, RFM12N20, RFP12N18, RFP12N20 250S2 TB334 TA09293. 75BVnss 75BVncc 50BVd
RFP12N06RLE Abstract: RFD12N06RLE RFD12N06RLESM kos30 Text: HARRIS RFD12N06RLE, RFD12N06RLESM S E M I C O N D U C T O R January 1994 RFP12N06RLE N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistors MegaFETs Features Packages RFD12N06RLE (TO-251) TOP VIEW • 12A.60V • rDS(on) x 0.135Q Z3 SOURCE	OCR Scan	PDF	RFD12N06RLE, RFD12N06RLESM RFP12N06RLE AN72S4 AN-72B0. RFD12N06RLESM, RFD12N06RLE kos30
12N6LE Abstract: 12N06RLE 12N06RLESM Text: in te g ri I RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE D a ta S h e e t O c to b e r 1999 2407.5 U ltraS ^ 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging F ile N u m b e r Features JE D EC 7 0 -2 5 1 A A JE D E C TO -252AA SOURCE	OCR Scan	PDF	RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE -252AA RFD12N -220A O-251AA AN7260. 12N6LE 12N06RLE 12N06RLESM
RFP12N18 Abstract: RFP12N20 RFP12M20 RFP mosfets RFM12N18 RFM12N20 Text: Standard Power MOSFETs RFM12N18, RFM12N20, RFP12N18, RFP12N20 F ile N u m b e r 1461 N-Channel Enhancement-Mode Power Field-Effect Transistors 12 A, 180 and 200 V rDs on : 0.25 n Features: • SOA is power-dissipation lim ited • Nanosecond sw itching speeds	OCR Scan	PDF	RFM12N18, RFM12N20, RFP12N18, RFP12N20 92CS-33741 RFM12N18 RFM12N20 RFP12N18 RFP12N20* RFP12N20 RFP12M20 RFP mosfets
f12n10L Abstract: f12n10 Text: in te fs il RFP12N10L D ata S h e e t J u ly 1999 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET F ile N u m b e r Features • 12A, 100 V These are N-Channel enhancem ent mode silicon gate power field effect transistors specifically designed for use	OCR Scan	PDF	RFP12N10L TA09526. RFP12N10L 0-56mA AN7254 AN7260 75BVds f12n10L f12n10

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onsemi RFP12N10L

Rochester Electronics LLC RFP12N18

Rochester Electronics LLC RFP12N06RLE

Aptina Imaging RFP12N10L

Harris Semiconductor RFP12N06RLE

RFP12N Datasheets (48)

RFP12N Datasheets Context Search

12N6LE

f12n10l

12N6LE

F12N10L

F12N10L

12N6LE

F12N10L

Untitled

F12n10

cgs resistor

RFP12N18

12n08

f12n10l

Untitled

f12n10l

F12N10L

Untitled

RFP12N08

RFP12N20

Untitled

RFP12N06RLE

12N6LE

RFP12N18

f12n10L