RFMD LTE Band 40
Abstract: RFMD LTE Band 7 RF5612 RF56123
Text: RF5612 RF56123.0V to 4.0V, 2.5GHz to 2.7GHz Linear Power Amplifier 3.0V TO 4.0V, 2.5GHz TO 2.7GHz LINEAR POWER AMPLIFIER 8 RFOUT 9 GND 10 VCC VCC VCC Package: 10-Pin, 4.0mmx4.0mmx0.975mm 7 6 1 2 3 4 Output Match 5 Functional Block Diagram
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RF56123
RF5612
10-Pin,
975mm
27dBm
18dBm
25dBm
DS120213s
330pF
RFMD LTE Band 40
RFMD LTE Band 7
RF5612
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Untitled
Abstract: No abstract text available
Text: RF5612 RF56123.0V to 4.0V, 2.5GHz to 2.7GHz Linear Power Amplifier 3.0V TO 4.0V, 2.5GHz TO 2.7GHz LINEAR POWER AMPLIFIER 8 RFOUT 9 GND 10 VCC VCC VCC Package: 10-Pin, 4.0mmx4.0mmx0.975mm 7 6 LTE DL POUT=18dBm WiMAX POUT=25dBm 2.5GHz to 2.7GHz Frequency
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RF5612
RF56123
10-Pin,
975mm
25dBm
18dBm
27dBm
DS120213s
330pF
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Untitled
Abstract: No abstract text available
Text: RF6276 3 V 700 MHz LTE LINEAR POWER AMPLIFIER Package Style: QFN, 16-Pin, 3 mm x 3 mm Features ̈ ̈ ̈ ̈ ̈ ̈ Input/Output Internally Matched 15% Linear Efficiency at 17 dBm, LPM LTE Compliant at 27 dBm, HPM 34% Linear Efficiency at 27 dBm -35 dBc E-UTRA ACLR at
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RF6276
16-Pin,
RF6276
J-STD-033A.
RF6276TR7
DS090730
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RF7321
Abstract: band21 RFMD LTE Band 40 rf732 RF7321PCBA-410 LTE RFMD mems matching network RFMD PA LTE
Text: RF7321 3V LTE Band 11, 21 Linear PA Module Package Style: Module, 10-Pin, 3mm x 3mm x 0.8mm Features Fully Compliant to LTE Modulation LTE Bands 11, 21 Best-in-Class Efficiency 47%, +28.5dBm Rel 99 output power High Power Gain : 28dB
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RF7321
10-Pin,
-38dBc
-39dBc
RF7321
203mm
330mm
025mm
DS120906
band21
RFMD LTE Band 40
rf732
RF7321PCBA-410
LTE RFMD mems matching network
RFMD PA LTE
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RFMD LTE Band 40
Abstract: No abstract text available
Text: RFFM7600 RFFM7600 5.0V, 2.5 GHz TO 2.7 GHz HIGH POWER FRONT END MODULE 5.0V, 2.5GHz TO 2.7GHz HIGH POWER FRONT END MODULE Package: 6mmx6mm Laminate GND 1 GND 2 24 23 GND 22 GND 21 ANT 20 GND 19 17 18 Pdet GND RX 16 Vcc3 3 15 Vreg3 WiMAX Applications
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RFFM7600
35RFMD
DS111121
1000pF
RFMD LTE Band 40
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RF7303
Abstract: RF730 RF7303PCBA-410 RFMD PA LTE
Text: RF7303 3V LTE/UMTS/CDMA BAND 3 LINEAR PA MODULE Package Style: Module, 10-Pin, 3mm x 3mm x 0.8mm Features Multi-Mode LTE/UMTS/CDMA LTE/UMTS Bands 3, 4, 9, and 10 CDMA Band Class 15 LTE PA Efficiency 38%, +28dBm Best-in-Class Current
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RF7303
10-Pin,
28dBm
RF7303
DSB121029
RF730
RF7303PCBA-410
RFMD PA LTE
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Untitled
Abstract: No abstract text available
Text: RFFM7600 RFFM7600 5.0V, 2.5GHz TO 2.7GHz HIGH POWER FRONT END MODULE 5.0V, 2.5GHz TO 2.7GHz HIGH POWER FRONT END MODULE Package: 6mm x 6mm Laminate GND 1 GND 2 Vcc3 3 24 23 22 GND 21 ANT 20 GND 19 16 17 18 Pdet GND RX 15 Vreg3 Pdown 14 Vreg2 GND
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RFFM7600
27dBm
24dBm,
85VDC
2500MHz
2570MHz
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RFMD PA LTE
Abstract: LTE rf front end RFMD LTE Band 40
Text: RFFM7600 RFFM7600 5.0V, 2.5GHz TO 2.7GHz HIGH POWER FRONT END MODULE 5.0V, 2.5GHz TO 2.7GHz HIGH POWER FRONT END MODULE Package: 6mm x 6mm Laminate GND 1 GND 2 24 23 GND 22 GND 21 ANT 20 GND 19 17 18 Pdet GND RX 16 Vcc3 3 15 Vreg3 WiMAX Applications
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RFFM7600
RFFM7600
27dBm
24dBm,
-48dBc
85VDC
2500MHz
2570MHz
2620MHz
RFMD PA LTE
LTE rf front end
RFMD LTE Band 40
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RF2374TR7
Abstract: DS1106
Text: RF2374 3V LOW NOISE AMPLIFIER 6 RF OUT RF IN 1 Logic Control GND 2 5 GND 3 4 Functional Block Diagram Applications 7 GAIN SELECT Low Noise and High Intercept Point Adjustable Bias Current Power Down Control
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RF2374
800MHz
RF2374
DS110615
RF2374SR
RF2374TR7
RF2374PCK-410
DS1106
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Untitled
Abstract: No abstract text available
Text: RF2374 3V LOW NOISE AMPLIFIER 6 RF OUT RF IN 1 Logic Control GND 2 5 GND 3 4 Functional Block Diagram Applications 7 GAIN SELECT Low Noise and High Intercept Point Adjustable Bias Current Power Down Control
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RF2374
800MHz
DS130417
RF2374SR
RF2374TR7
RF2374PCK-411
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Untitled
Abstract: No abstract text available
Text: RF2374 3V LOW NOISE AMPLIFIER 6 RF OUT RF IN 1 Logic Control GND 2 5 GND 3 4 Functional Block Diagram Applications 7 GAIN SELECT Low Noise and High Intercept Point Adjustable Bias Current Power Down Control
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RF2374
800MHz
DS110615
RF2374SR
RF2374TR7
RF2374PCK-410
RF2374PCK-411
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Untitled
Abstract: No abstract text available
Text: RF2374 3V LOW NOISE AMPLIFIER 6 RF OUT RF IN 1 Logic Control GND 2 5 GND 3 4 Functional Block Diagram Applications 7 GAIN SELECT Low Noise and High Intercept Point Adjustable Bias Current Power Down Control
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RF2374
800MHz
DS140519
RF2374SR
RF2374TR7
RF2374PCK-411
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Untitled
Abstract: No abstract text available
Text: RF7411 3V WCDMA BAND 1 LINEAR PA MODULE Package Style: Module, 10-Pin, 3mm x 3mm x 1.0mm : NDA REQUIRED VBAT Features HSDPA/HSUPA/HSPA+/ LTE High Efficiency WCDMA Operation : 42.5% at POUT = +28dBm Low Voltage Positive Bias Supply 3.0V to 4.2V
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RF7411
10-Pin,
28dBm
203mm
330mm
025mm
DS111206
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Untitled
Abstract: No abstract text available
Text: RF1295 SP12T ANTENNA SWITCH MODULE IDEAL FOR MULTI-BAND 3G AND LTE APPLICATIONS Package: 30-pin, 3.0mm x 3.8mm x 0.85mm Features Excellent Insertion Loss and Isolation Performance Ten Linear Paths Offer Band Combination and
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RF1295
SP12T
30-pin,
B13-2fo,
30-pin
RF1295
DS120626
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RFMD PA LTE
Abstract: RF7413 RF-741
Text: RF7413 3V WCDMA BAND 3 LINEAR PA MODULE Package Style: Module, 10-Pin, 3mm x 3mm x 1.0mm CONFIDENTIAL: NDA REQUIRED VBAT Features HSDPA/HSUPA/HSPA+/LTE High Efficiency WCDMA Operation: 41% at POUT=+28dBm RF IN Low Voltage Positive Bias
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RF7413
10-Pin,
28dBm
RF7413
203mm
330mm
025mm
DS111206
RFMD PA LTE
RF-741
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RF7411
Abstract: RFMD LTE Band 40 HSPA Module RFMD PA LTE RFMD LTE Band 7 DS1112 RF741
Text: RF7411 3V WCDMA BAND 1 LINEAR PA MODULE Package Style: Module, 10-Pin, 3mm x 3mm x 1.0mm : NDA REQUIRED VBAT Features HSDPA/HSUPA/HSPA+/ LTE High Efficiency WCDMA Operation : 42.5% at POUT = +28dBm Low Voltage Positive Bias Supply 3.0V to 4.2V
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RF7411
10-Pin,
28dBm
RF7411
203mm
330mm
025mm
DS111206
RFMD LTE Band 40
HSPA Module
RFMD PA LTE
RFMD LTE Band 7
DS1112
RF741
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Untitled
Abstract: No abstract text available
Text: RFSW6131 RFSW6131 F9999 SP3T SYMMETRIC SWITCH LF TO 6000MHZ Package: DFN, 8-pin, 1.5mm x 1.5mm V3 RF3 8 7 Features LF to 6000MHz Operation Symmetric SP3T Low Loss: 0.5dB 2GHz Isolation: 27dB (2GHz) High IP3: 56dBm P0.1dB: 31dBm (5V, 2.2GHz)
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RFSW6131
F9999
6000MHZ
6000MHz
56dBm
31dBm
RFSW6131
DS120606
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RFSW6131
Abstract: SW6131 RFMD LTE Band 40
Text: RFSW6131 RFSW6131 F9999 SP3T SYMMETRIC SWITCH LF TO 6000MHZ Package: DFN, 8-pin, 1.5mm x 1.5mm V3 RF3 8 7 Features LF to 6000MHz Operation Symmetric SP3T Low Loss: 0.5dB 2GHz Isolation: 27dB (2GHz) High IP3: 56dBm P0.1dB: 31dBm (5V, 2.2GHz)
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RFSW6131
F9999
RFSW6131
6000MHZ
6000MHz
56dBm
31dBm
DS120606
SW6131
RFMD LTE Band 40
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wifi module
Abstract: RFMD PA LTE wifi amplifier
Text: RFMD . RF5605/RF5652 5.0V, 2.4 to 2.7GHz High Power Front End Module and Power Amplifier RFMD delivers high-power products specifically developed to address IEEE 802.11b/g/n WiFi customer premise equipment CPE applications. The RF5605 front end module (FEM) has an integrated three-stage linear power amplifier (PA),
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RF5605/RF5652
11b/g/n
RF5605
RF5652,
30dBm
IEEE802
RF5605/RF5652
wifi module
RFMD PA LTE
wifi amplifier
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RFG1M20180
Abstract: rfmd envelope tracking bpt06
Text: RFMD . High-Power GaN Broadband Power Transistors BPT RFMD’s high-power GaN broadband power transistors (BPTs) are optimized for commercial infrastructure, military communications, and general purpose amplifier applications in the 700MHz to 2.2GHz frequency band. This series of BPTs are therefore ideal for constant envelope, pulsed,
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700MHz
RFG1M20180
rfmd envelope tracking
bpt06
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LTE rf front end
Abstract: DG09 4G lte RF Transceiver power amplifier transceiver 4G LTE 3g amplifier gsm circuit diagram project RF7200 lte RF Transceiver DCS1800 RF7202
Text: AN RFMD WHITE PAPER RFMD. ® 3G/4G Multimode Cellular Front End Challenges Part 2: Architecture Discussion Kevin Walsh and Jackie Johnson Key Concepts Discussed: • Multiple architecture options available to fill different design needs for 3G/4G cellular front ends.
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WP090202
LTE rf front end
DG09
4G lte RF Transceiver
power amplifier transceiver 4G LTE
3g amplifier
gsm circuit diagram project
RF7200
lte RF Transceiver
DCS1800
RF7202
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RF7242
Abstract: RFMD PA LTE RFMD LTE Band 40
Text: RF7242 3V W-CDMA BAND 2 LINEAR PA MODULE Package Style: Module, 10-Pin, 3mmx3mmx1.0mm VBAT 10 VCC 1 Features AMP HSDPA /HSUPA /HSPA+/LTE Low Voltage Positive Bias Supply 3.0V to 4.2V +28.5dBm Linear Output Power (+27.5dBm HSDPA
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RF7242
10-Pin,
203mm
330mm
025mm
DS110803
RF7242
RFMD PA LTE
RFMD LTE Band 40
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Untitled
Abstract: No abstract text available
Text: RFCR2711 RFCR2711 2110MHz to 2170MHz Single Junction Drop-In Circulator 2110MHz TO 2170MHz SINGLE JUNCTION DROP-IN CIRCULATOR Package: Drop-in, 0.75in x 0.75in Features Typical Insertion Loss Less than 0.2dB -70dBc IMD Minimum Isolation Greater than 23dB
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RFCR2711
2110MHz
2170MHz
-70dBc
RFCR2711
DS120419
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RF7248
Abstract: RFMD LTE Band 40 RFMD PA LTE
Text: RF7248 3V W-CDMA BAND 8 LINEAR PA MODULE Package Style: Module, 10-Pin, 3mmx3mmx1.0mm VBAT 10 VCC 1 Features AMP HSDPA /HSUPA /HSPA+/LTE Low Voltage Positive Bias Supply 3.0V to 4.2V +28.5dBm Linear Output Power (+27.5dBm HSDPA
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RF7248
10-Pin,
203mm
330mm
025mm
DS110803
RF7248
RFMD LTE Band 40
RFMD PA LTE
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