RFD2 Search Results

Contextual Info: Copyright, RF Digital 7/10/2011 1:40 AM Patents Pending RoHS CE • ESTI RFD21733 • FCC • IC RFD21743 • FCC Approved & Certified 13715 Alton Pkwy • Irvine • CA • 92618 Tel: 949.610.0008 • www.RFdigital.com Fast Answers: support@rfdigital.com

nRF24LE1

Abstract: nRF24LE1F RFD21731 RFD21733 nRF24LE1-F16Q24 NRF24Le WIFI data transmitter and receiver schematic RFD21735 active rfid nRF24L
Contextual Info: 13715 Alton Pkwy • Irvine • CA • 92618 Tel: 949.610.0008 • Fax: 949.610.0009 www.rfdigital.com • sales@rfdigital.com RF.Digital.nRF24LE1.Module.Manual.doc 2.4GHz RF Modules based on nRF24LE1 RFD21731, RFD21732, RFD21733, RFD21734, RFD21735, RFD21736, RFD21737, RFD21738

RF1S42N03L

Contextual Info: HARRI S DI S CRE TE P O W E R MOS F E T LINE T O - 2 5 2 PACKAGE STANDARD GATE DEVICES V dss V r DS(ON) 1 (A ) T O -2 5 2 A A CHANNEL 20V 0.0250 20A RFD20N02SM N 50V 0.3000 8A RFD8P05SM P 0.0470 16A RFD16N05SM N 0.100Q 14A RFD14N05SM N 0.1500 15A RFD15P05SM

MR-20RFD2

Abstract: MR-34RFD2 LM 458 MR-50RFD2
Contextual Info: Rectangular connector Straight DIP type female connector with locking block for PCBs MR- RFD2( ) For PCBs DIP With locking block ● Configuration of product Part No. MR- ( ) R FD2 ( ) ➀ ➁ ➂ ➃ ➄ ➀ Series name ➁ No. of contacts: 8, 16, 20, 25, 34 or 50

mosfet 4430

Abstract: 4433 mosfet rfd20n03sm9a RFD20N03 RFD20N03SM TB334 AN9321 AN9322
Contextual Info: RFD20N03, RFD20N03SM Data Sheet 20A, 30V, 0.025 Ohm, N-Channel Power MOSFETs The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,

D203S

Contextual Info: RFD20N03, RFD20N03SM Data Sheet Title FD2 03, D20 3S bt A, V, 25 m, anwer OSTs utho July 1999 20A, 30V, 0.025 Ohm, N-Channel Power MOSFETs Features The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of

RFD22121

Contextual Info: Copyright, RFduino.com 12/5/2013 12:18 PM RFD22301, RFD22102 CE • ETSI • IC • FCC Approved & Certified RFduino www.RFduino.com • sales@RFduino.com 1601 Pacific Coast Hwy • Suite 290 Hermosa Beach • CA • 90254 Tel: 949.610.0008 Based On RFD22301

Contextual Info: Copyright, RF Digital 10/15/2012 12:58 PM RoHS CE • ESTI RFD21815 FCC • IC Approved & Certified RFDP8 13715 Alton Pkwy • Irvine • CA • 92618 Tel: 949.610.0008 • www.RFdigital.com Fast Answers: support@rfdigital.com Shield for Arduino RFD21815

RFD21733

Abstract: Garage Door Opener remote circuit diagrams rfd 21733 RFID uart RFD21736 RFD21731 electronic coin selector UYI24 RFD21734 sm4 radio
Contextual Info: Copyright, RF Digital Corp. 8/26/2010 11:56 PM Patents Pending RoHS RFD21733 FCC APPROVED RFDP8 13715 Alton Pkwy • Irvine • CA • 92618 Tel: 949.610.0008 • Fax: 949.610.0009 www.rfdigital.com • sales@rfdigital.com RFDANT RFD21743 RFD21740 RF Module

TA49235

Abstract: 20n03
Contextual Info: integri I RFD20N03, RFD20N03SM D ata S heet 20A, 30V, 0.025 Ohm, N-Channel Power MOSFETs The R FD 20N 03 and R F D 20 N 03 S M N-Channel power M O S F E Ts are manufactured using the M egaFET process. J u ly 1999 F ile N u m b e r 4 3 5 0 .1 Features • 20A, 30V

AN9321

Abstract: AN9322 RFD20N03 RFD20N03SM RFD20N03SM9A TB334 54E-1
Contextual Info: RFD20N03, RFD20N03SM Data Sheet 20A, 30V, 0.025 Ohm, N-Channel Power MOSFETs The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,

iphone camera

Contextual Info: Copyright, RF Digital 11/22/2013 12:42 AM Patents Pending RF Module Model Number: R25 PN: RFD22301 PN: RFD22302 www.RFdigital.com • sales@rfdigital.com 1601 Pacific Coast Hwy • Suite 290 Hermosa Beach • CA • 90254 Tel: 949.610.0008 RoHS CE • ETSI • IC • FCC

RFM22L504KD

Abstract: DCR2-22A25 RFD2E473K RFD2E224K RFM2E145KPD RFD2B104K RFNA104M RFM22 RFM2H224 RFM2E224KD
Contextual Info: C R N etw o rks RFD , RFNA, RFN , R F M -SE R IE S R F D -S E R IE S • S tandard R atings P a rt No. »Specifications RFD2B104K RFD2B224K RFD2E333K RFD2E473K RFD2E683K RPD2E104K RFD2E224K O p eratin g tem p eratu re ran g e: —2 5 — +70°C C a p acitan ce to leran ce: ± 10% (K )

TA49235

Abstract: 99E-1 rfd20n diode 736
Contextual Info: RFD20N03, RFD20N03SM S E M I C O N D U C T O R 20A, 30V, 0.025 Ohm, N-Channel Power MOSFET November 1997 Features Description • 20A, 30V The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI

Contextual Info: Copyright, RFduino.com 4/14/2014 12:29 PM RFD22301, RFD22102 CE • ETSI • IC • FCC Approved & Certified RFduino www.RFduino.com • sales@RFduino.com 1601 Pacific Coast Hwy • Suite 290 Hermosa Beach • CA • 90254 Tel: 949.610.0008 Based On RFD22301

nRF6310

Abstract: nRF24LE1 NRF24L01 nRF24LE1F RF Based Wireless Electronic Notice Board using 8051 RFD21736 RFD21734 NRF24Le RFD21731 nRF24LE1-F16Q24
Contextual Info: Copyright, RF Digital Corp. 7/26/2010 3:23 PM Patents Pending RoHS nRF24LE1 13715 Alton Pkwy • Irvine • CA • 92618 Tel: 949.610.0008 • Fax: 949.610.0009 www.rfdigital.com • sales@rfdigital.com RF Module RFD21731 RFD21732 RFD21734 RFD21736 ETSI • CE Compliant

rneg2

Contextual Info: QT1F-Plus Device Quad T1 Framer-Plus TXC-03103C DESCRIPTION • D4 SF, ESF including HDLC Link support , and transparent framing modes • Encodes/decodes AMI/B8ZS and forced ones density line codes • Fractional T1 gapped clock • Monitor function for frame pulse, clock and data

HYFEN BANTAM

Abstract: How to order Hyfen Bantam connectors UT06128ST MSG59P-L21 ms50pm MS75PM MS14RM57 UT00128PT Souriau MBG cross reference UTG6103PN
Contextual Info: Index Page Circular introduction Circular introduction 6 Plastic connector with metal coupling system UTG - Metalok Bantam 11 Full plastic circular connector UTP - Full plastic Bantam 15 Shielded connectors. how to assemble . Shielding, how to assemble.

RC14M30K

Abstract: RM20M12K UTS712D10P32 souriau 841 UTS7142G1P UTS0124P UTS78D4P32 UTS61412S AWG 24 multi strand copper wire UTS6JC147S
Contextual Info: UTS Series Dynamic IP68/69K • UV Resistant • UL/IEC Compliant Overview UTS Series Cable assembly . 14 2 contacts . 20 2 + ground contacts . 28

H1P transistor with three end

Abstract: SSO20 U2782B U2782B-AFS U2782B-AFSG3 rfd210 SR 13007
Contextual Info: U2782B 1100-MHz Twin PLL Description The IC U2782B is a low-power twin PLL manufactured with Atmel Wireless & Microcontrollers’ advanced UHF process. The maximum operating frequency is 1100 MHz for both PLLs. The device features a wide supply-voltage range from 2.7 V to 5.5 V. A prescaler 64/65 and powerdown function for both PLLs are integrated. The twin

Contextual Info: Tem ic U2783B S e m i c o n d u c t o r s 1250-MHz / 400-MHz Twin PLL Description The IC U2783B is a low power twin PLL manufactured with TEMIC Semiconductors’ advanced UHF process. The maximum operating frequency is 1250 MHz and 400 MHz respec-tively. It features a wide supply-voltage

U2782B

Abstract: U2782B-AFS U2782B-AFSG3
Contextual Info: Tem ic U2782B S e m i c o n d u c t o r s 1100 MHz Twin PLL Description The IC U2782B is a low power twin PLL manufactured with TEMIC’s advanced UHF process. The maximum operating frequency is 1100 MHz for both PLLs. It features a wide supply voltage range from 2.7 to 5.5 V.

hd64b180

Abstract: hd64A180
Contextual Info: 4. ELECTRICAL CHARACTERISTICS 4.1 HD64180R0 ELECTRICAL CHARACTERISTICS • ABSOLUTE MAXIMUM RATINGS Sym b ol Item Sup p ly Voltage - 0 .3 V cc - 0 .3 Value Unit ~ V + 7 .0 V ~ V c c + 0 .3 Input Voltage Vin Operating Tem perature T"opr -2 0 ~ +75 °C ^stg

Contextual Info: 1 ’ 1 • . } I ' ' , , f - f- f . f , I , j - I I H D 64180R 1 -101 /H D 6 4 1 8 0 Z -10 Electrical Characteristics P re lim in a ry SEPTEMBER, 1988 1, ' D ES C R IP TIO N Based on a microcoded execution unit and advanced CMOS manufacturing technology, the Hitachi HD64180 is an 8-bit CPU,