RF TRANSISTOR FREQUENCY 1.5GHZ GAIN 20 DB Search Results

TA4020FT

Abstract: 60GHz transistor 60Ghz TESQ
Contextual Info: TA4020FT TOSHIBA Linear Integrated Circuit Silicon-Germanium Monolithic TA4020FT ○ UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm 1.2±0.05 ・Thin Extreme Super mini Quad Package 4pin :TESQ 0.9±0.05 High Gain: • Lead free article |S21e| =15.0dB (@ f=1.5GHz)

Contextual Info: TA4020FT TOSHIBA Linear Integrated Circuit Silicon-Germanium Monolithic TA4020FT Unit: mm ○ UHF LOW NOISE AMPLIFIER APPLICATION 1.2±0.05 ・Thin Extreme Super mini Quad Package 4pin :TESQ 0.9±0.05 NF=0.95dB (@ f=1.5GHz) 2 • High Gain: • Lead free article

60Ghz

Abstract: TA4020FT rf transistor frequency 1.5GHz gain 20 dB
Contextual Info: TA4020FT TOSHIBA Linear Integrated Circuit Silicon-Germanium Monolithic TA4020FT Unit: mm ○ UHF LOW NOISE AMPLIFIER APPLICATION 1.2±0.05 ・Thin Extreme Super mini Quad Package 4pin :TESQ 0.9±0.05 NF=0.95dB (@ f=1.5GHz) 2 • High Gain: • Lead free article

Contextual Info: T1G3000532-SM 5W, 32V, 0.03 – 3.5 GHz, GaN RF Input-Matched Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

Contextual Info: T1G3000532-SM 5W, 32V, 0.03 – 3.5 GHz, GaN RF Input-Matched Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

60Ghz

Abstract: TA4020FT
Contextual Info: TA4020FT TOSHIBA Linear Integrated Circuit Silicon-Germanium Monolithic TA4020FT ○ UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm 1.2±0.05 ・Thin Extreme Super mini Quad Package 4pin :TESQ 0.9±0.05 High Gain: • Lead free article |S21e| =15.0dB (@ f=1.5GHz)

Contextual Info: BFP405 NPN Silicon RF Transistor • For low current applications 3 • For oscillators up to 12 GHz 2 4 • Noise figure F = 1.25 dB at 1.8 GHz 1 outstanding Gms = 23 dB at 1.8 GHz • SIEGET  25 GHz fT - Line • Pb-free RoHS compliant package • Qualified according AEC Q101

RF TRANSISTOR 10GHZ

Abstract: BFP405 10GHz oscillator RF TRANSISTOR 10GHZ low noise TRANSISTOR NPN 5GHz BGA420 BFP405 ALs 2n2222+spice+model
Contextual Info: BFP405 NPN Silicon RF Transistor • For low current applications 3 • For oscillators up to 12 GHz 2 4 • Noise figure F = 1.25 dB at 1.8 GHz 1 outstanding Gms = 23 dB at 1.8 GHz • SIEGET  25 GHz fT - Line • Pb-free RoHS compliant package • Qualified according AEC Q101

Contextual Info: SIEMENS BFP 196W NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • f j = 7.5GHz F = 1.5 dB at 900MHz

Contextual Info: BFP405 Low Noise Silicon Bipolar RF Transistor • For low current applications 3 • For oscillators up to 12 GHz 2 4 • Minimum noise figure NFmin = 1.25 dB at 1.8 GHz 1 Outstanding Gms = 23 dB at 1.8 GHz • Pb-free RoHS compliant and halogen-free package

a1091 transistor

Contextual Info: Ordering number : ENA1091A 2SC5490A RF Transistor 10V, 30mA, fT=8GHz, NPN Single SSFP http://onsemi.com Features • • • • • • Low-noise : NF=0.9dB typ f=1GHz : NF=1.4dB typ (f=1.5GHz) Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT=3.5GHz typ

2sc4857

Abstract: 2SC4872 2sc487 2sc4856 2sc4859
Contextual Info: I High-Performance Si Bipolartransistor fT > 5GHz Series Features High Gain, Low Noise G -III-NRP (G iga-lll-N oise Reduction Process) technology subm icron hyperfine process developed for high gain and low noise characteristics Low Power Dissipation High perform ance at low voltage and low current for low power dissipation

mobile rf power amplifier transistor

Abstract: DTC TCXO 5.1 channel converter circuit diagram MB15G125 quadrature modulator internal block diagram of mobile phone transistor for RF amplifier and mixer fujitsu power amplifier GHz fujitsu rf power amplifier 49
Contextual Info: New products New products MB39A102 Protection Circuit Functions Error Amplifier Block Error Amp The error amplifier is an amplifier that detects the DC/DC converter output voltage and outputs PWM control signals. Stable phase compensation against the system can be

HP MMIC INA

Contextual Info: What HEWLETT* mLlíM PACKARD Low N oise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data INA-03100 Features • Cascadable 50 Q. Gain Block • Low N oise Figure: 2.5 dB Typical at 1.5 GHz • High Gain: 26.0 dB Typical at 2.8 GHz • 3 dB Bandwidth:

Contextual Info: Ordering number : ENA1074A 2SC5245A RF Transistor http://onsemi.com 10V, 30mA, fT=8GHz, NPN Single MCP Features • • • • Low-noise : NF=0.9dB typ f=1GHz : NF=1.4dB typ (f=1.5GHz) High gain : ⏐S21e⏐2=10dB typ (f=1.5GHz) High cut-off frequency : fT=8GHz typ

900mhz chip antenna

Abstract: Q62702-F1576 GMA marking
Contextual Info: BFP 196W NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fT = 7.5GHz F = 1.5 dB at 900MHz

transistor bfp 196

Abstract: transistor bf 196 Q62702-F1320 GMA marking
Contextual Info: BFP 196 NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fT = 7.5GHz F = 1.5 dB at 900MHz

BFG196

Abstract: Q62702-F1292
Contextual Info: BFG 196 NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fT = 7.5GHz F = 1.5 dB at 900MHz

Contextual Info: Ordering number : ENA1075A 2SC5277A RF Transistor http://onsemi.com 10V, 30mA, fT=8GHz, NPN Single SMCP Features • • • • • Low-noise : NF=0.9dB typ f=1GHz : NF=1.4dB typ (f=1.5GHz) High gain : ⏐S21e⏐2=10dB typ (f=1.5GHz) High cut-off frequency : fT=8GHz typ

Contextual Info: BFP410 Low Noise Silicon Bipolar RF Transistor • Low current device suitable e.g. for handhelds 3 • For high frequency oscillators e.g. DRO for LNB 2 4 • For ISM band applications like 1 Automatic Meter Reading, Sensors etc. • Transit frequency fT = 25 GHz

transistor 2.4GHz amplifier schematic wifi

Abstract: land pattern for 0402 cap
Contextual Info: SZA-2044 Z SZA-2044(Z) 700MHz to 2.7GHz 5V 1W Power Amplifier 700MHz to 2.7GHz 5V 1W Power Amplifier Package: QFN, 4mm x 4mm Product Description Features RFMD’s SZA-2044 is a high efficiency class AB heterojunction bipolar transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT

Contextual Info: CONIilELL CORP/ ANALOG SYS =131 ]> 2413^17 0DQ0224 T • JRC 7 ^ 7 7 ^ 7 ~ /0 MA-207 n r jn L O G Super Fast, Wideband Operational Amplifier SYSTEMS General Description MA-207 is a very wide bandwidth, high slew rate operational amplifier constructed with a bipolar mono­

T3D 77

Abstract: Ultrasonic amplifier schematic circuit MA-207 MA-207-CP 0D005 power amplifers schematic 10ACL mA207
Contextual Info: CONI i l ELL CORP/ ANALOG SYS T3 D T> 2413^17 00D0B24 T B J R C 7 ^ 7 7 ^ 7 V i? M A -2 07 n fM R L O G SYSTEMS Super Fast, W id e b an d O p e r a t io n a l Amplifie r G e n e ra l D es c rip tio n MA-207 is a very wide bandwidth, high slew rate operational amplifierconstructed with a bipolar mono­

Contextual Info: BFP410 NPN Silicon RF Transistor • Low current device suitable e.g. for handhelds 3 • For high frequency oscillators e.g. DRO for LNB 2 4 • For ISM band applications like 1 Automatic Meter Reading, Sensors etc. • Transit frequency f T = 25 GHz • Pb-free RoHS compliant package