RF TRANSISTOR APPLICATION NOTE NXP Search Results

AN10896

Contextual Info: AN10896 Mounting and Soldering of RF transistors Rev. 2 — 13 Nov 2012 Application note Document information Info Content Keywords Surface mount, reflow soldering, bolt down Abstract This application note provides bolt down and soldering guidelines for NXP’s RF transistor packages

AN10896

Abstract: finger print sensor pcb with circuit Mounting and Soldering of RF transistors heller 1700 ipc 610D JEDEC J-STD-020d Moisture/Reflow sensitivity HVQFN48 J-STD-020D bga rework graphite thermal spreader
Contextual Info: AN10896 Mounting and Soldering of RF transistors Rev. 01 — 17 May 2010 Application note Document information Info Content Keywords Surface mount, reflow soldering, bolt down Abstract This application note provides bolt down and soldering guidelines for NXP’s RF transistor packages

CRCW08050R0FKEA

Abstract: 3214W-1-201E S0805W104K1HRN-P4 BLF7G27-150P GRM32ER7YA106K88L GRM31MR71H105K88L NJM 78L08UA-ND 30RF35 BLF7G27LS-150P national 2n2222
Contextual Info: AN10933 2.5 GHz to 2.7 GHz Doherty power amplifier using the BLF7G27LS-150P Rev. 01 — 16 August 2010 Application note Document information Info Content Keywords RF power transistor, Doherty architecture, LDMOS, RF performance, Digital PreDistortion DPD , IS-95, W-CDMA, BLF7G27LS-150P

jrc 78L08

Abstract: RESISTOR POTENTIOMETER GRM32ER71H106KA12L stripline power combiner splitter GRM31MR71H105KA88L grm32er71h106ka transistor J333 AN10923 GRM32ER71H106KA12 jrc78L08
Contextual Info: AN10923 1.5 GHz Doherty power amplifier for base station applications using the BLF6G15L-250PBRN Rev. 1 — 14 March 2011 Application note Document information Info Content Keywords RF power transistor, Doherty architecture, LDMOS, Power amplifier, W-CDMA, LTE, Base station, BLF6G15L-250PBRN

FR10300N0200J

Abstract: UT-085 BLF645 2861002402 deltabond 152 UT-085C-15 transistor C103 c103 TRANSISTOR AN10953 C5750X7S2A106M
Contextual Info: AN10953 BLF645 10 MHz to 600 MHz 120 W amplifier Rev. 1 — 3 March 2011 Application note Document information Info Content Keywords BLF645, broadband Abstract The BLF645 is a 100 W, 32 V LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications from HF to 1.4 GHz. This

MFRC52x

Abstract: AN166510 - Amplifier antenna matching calculation RFSim99 antenna matching 13,56 mhz calculation AN10893 13.56MHZ RFID nxp nxp proximity antenna design antenna matching calculation NXP antenna design guide 13.56 power amplifier nxp
Contextual Info: AN10893 RF Amplifier for NXP contactless MFRC52x Rev. 1.0 — 4 November 2009 182010 Application note PUBLIC Document information Info Content Keywords RFID, Antenna Design, RF Amplifier, Antenna Matching, contactless reader Abstract This application notes provides guidance on antenna and RF amplifier

RFSim99

Abstract: nfc antenna design guide nfc antenna nfc pcb antenna AN166510 nfc antenna design AN166510 - Amplifier antenna matching calculation AN142522 nxp nfc nfc antenna matching
Contextual Info: AN142522 RF Amplifier for NXP Contactless NFC Reader IC's Rev. 2.2 — 25 November 2008 Application note Document information Info Content Keywords RFID, Antenna Design, RF Amplifier, Antenna Matching, contactless reader, NFC Abstract This application notes provides guidance on antenna and RF amplifier

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFG10W/X UHF power transistor Product specification 1995 Sep 22 NXP Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin

BC548 TRANSISTOR REPLACEMENT

Abstract: transistor BC548 Philips Capacitor RT5880 BC548 transistor bc548 bp HE bc548 BC548 transistor bc548 equivalent MBG431
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor Product specification 1995 Sep 22 NXP Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin

MGM219

Abstract: 9335 895 BC817 BFG21W DCS1800 MGM224
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BFG21W UHF power transistor Product specification Supersedes data of 1997 Nov 21 1998 Jul 06 NXP Semiconductors Product specification UHF power transistor BFG21W FEATURES PINNING • High power gain PIN  High efficiency

Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D124 BFG21W UHF power transistor Product specification Supersedes data of 1997 Nov 21 1998 Jul 06 NXP Semiconductors Product specification UHF power transistor BFG21W FEATURES PINNING • High power gain PIN  High efficiency

Contextual Info: AN11102 BFU725F/N1 2.4 GHz LNA evaluation board Rev. 1 — 28 July 2011 Application note Document information Info Content Keywords LNA, 2.4GHz, BFU725F/N1 Abstract This document explains the BFU725F/N1 2.4GHz LNA evaluation Board. AN11102 NXP Semiconductors

2SK43 transistor

Abstract: smd transistor m29 sot343 UXA23465 Motorola transistor smd marking codes walkie-talkie transceiver diagram UXA23476 diode SMD WL sot23 BF862 AM LNA uaf3000 2SK163
Contextual Info: th 1 ed ition 10 th editio n t h 1 e d th i t i o n RF manual 10 edition 10 Application and design manual for RF products TH September 2007 www.nxp.com 2007 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written

BGU7073

Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
Contextual Info: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by

BD228

Abstract: BFG10 transistor K 2937
Contextual Info: BFG10; BFG10/X NPN 2 GHz RF power transistor Rev. 05 — 22 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

Contextual Info: BFG10; BFG10/X NPN 2 GHz RF power transistor Rev. 05 — 22 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

BFG480W

Abstract: 1184 transistor analog transistor B 1184
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BFG480W NPN wideband transistor Product specification Supersedes data of 1998 Jul 09 1998 Oct 21 NXP Semiconductors Product specification NPN wideband transistor BFG480W FEATURES PINNING • High power gain PIN DESCRIPTION

BFG480W

Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D124 BFG480W NPN wideband transistor Product specification Supersedes data of 1998 Jul 09 1998 Oct 21 NXP Semiconductors Product specification NPN wideband transistor BFG480W FEATURES PINNING • High power gain PIN DESCRIPTION

UPC8236

Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
Contextual Info: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s

circuit diagram of GSM based home automation system

Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
Contextual Info: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by

Contextual Info: Ultra Wideband Doherty cuts Energy Consumption in Half By Jawad Qureshi, Walter Sneijers, Korne Vennema and Mark Murphy – NXP Semiconductors Introduction The great advantage of the broadband solution is TV transmitter manufacturers are facing the challenge

MPF102 spice model

Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
Contextual Info: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for

very simple walkie talkie circuit diagram

Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
Contextual Info: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.

double TRANSISTOR SMD MARKING CODE mc

Abstract: walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578
Contextual Info: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.