RF TRANSISTOR 200W Search Results

MRF660

Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
Contextual Info: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040

F1170

Abstract: F1J4
Contextual Info: polyfet rf devices F1170 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F1070

Contextual Info: polyfet rf devices F1070 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

Contextual Info: VRF161 MP 50V, 200W, 150MHz RF POWER VERTICAL MOSFET The VRF161 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

VK200-4B

Contextual Info: VRF161 MP 50V, 200W, 150MHz RF POWER VERTICAL MOSFET The VRF161 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

200w power amplifier circuit diagram

Abstract: AN1385 LDMOS digital ISL21400 MRF9080
Contextual Info: LDMOS Transistor Bias Control in Basestation RF Power Amplifiers Using Intersil’s ISL21400 Application Note February 27, 2007 Introduction AN1385.0 The ISL21400 Programmable Output Temperature Sensor IC LDMOS transistors are used for RF Power Amplification in

Contextual Info: Part Number: Integra ILD1214EL200 TECHNOLOGIES, INC. L-Band RF Power LDMOS Transistor Silicon LDMOS  High Power Gain  Superior Thermal Stability The high power pulsed transistor part number ILD1214EL200 is designed for L-Band systems operating at 1.215–1.400 GHz. Operating at a pulse width of 16ms

TH430

Abstract: SD1728 M177
Contextual Info: SD1728 TH430 RF & Microwave transistors HF SSB application Features • 13.56MHz ■ 44V ■ Gold metallization ■ Common emitter ■ POUT = 200W with 15dB gain Description The SD1728 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB and

MOSFET J140

Abstract: DU2820S 200w Transistor transistor 200w RF POWER MOSFET TRANSISTOR 100MHz
Contextual Info: DU2820S RF Power MOSFET Transistor 200W, 2-175MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power

Contextual Info: DU2820S RF Power MOSFET Transistor 200W, 2-175MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power

Contextual Info: DU28200M RF Power MOSFET Transistor 200W, 2-175MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power

DU28200M

Abstract: DU28200
Contextual Info: DU28200M RF Power MOSFET Transistor 200W, 2-175MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power

TH430

Abstract: M177 JESD97 SD1728 TH430 marking
Contextual Info: SD1728 TH430 RF & Microwave transistors HF SSB application Features • 13.56MHz ■ 44V ■ Gold metallization ■ Common emitter ■ POUT = 200W with 15dB gain Description The SD1728 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB and

TRANSISTOR J15

Abstract: PIMD3
Contextual Info: NPT1007 Gallium Nitride 28V, 200W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for narrowband and broadband applications from from DC – 1200MHz • 200W P3dB CW power at 900MHz in quadrature

NPT1007

Abstract: 2305 transistor transistor A114 NPT1007B 200W PUSH-PULL 1000v 200w Transistor c101 TRANSISTOR transistor C101 transistor equivalent table c101 EAR99
Contextual Info: NPT1007 Datasheet Gallium Nitride 28V, 200W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for narrowband and broadband applications from from DC – 1200MHz • 200W P3dB CW power at 900MHz in quadrature

capacitor 50uf

Abstract: balun 50 ohm DU28200M transistor c s z 44 v
Contextual Info: m an A M P com pany RF MOSFET Power Transistor, 200W, 28V 2 - 1 7 5 MHz DU28200M V2.00 Features • • • • • - A - N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices

transistor 5cw

Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
Contextual Info: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000

Contextual Info: DESCRIPTION PACKAGE The high power HVV0912-450 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed avionics applications operating over the frequency range of 960 MHz and 1215 MHz. FEATURES High Power Gain Excellent Ruggedness

Contextual Info: Part Number: Integra IDM500CW200 TECHNOLOGIES, INC. UHF-Band RF Power MOSFET Silicon MOSFET − High Power Gain − Superior thermal stability The high power transistor part number IDM500CW200 is designed for VHF/UHF-Band systems operating at 1-500 MHz. Operating at CW

Contextual Info: Part Number: Integra IDM30512CW50 TECHNOLOGIES, INC. Broadband RF Power MOSFET Silicon MOSFET − High Power Gain − Superior thermal stability The high power transistor part number IDM30512CW50 is designed for VHF/UHF-Band systems operating over the frequency band 30-512 MHz under CW conditions. Over the

1416-200

Contextual Info: 1416 - 200 200 Watts - 50 Volts, Pulsed Radar 1400 - 1600 MHz GENERAL DESCRIPTION The 1416-200 is an internally matched, COMMON BASE transistor capable of providing 200 Watts of pulsed RF output power at one microsecond pulse width, ten percent duty factor across the band 1400-1600 MHz. This

2731GN-200M

Abstract: 2731GN power transistor gan s-band J6 transistor Gan transistor j374
Contextual Info: 2731GN-200M Rev 1 2731GN – 200M 200 Watts - 60 Volts, 200 s, 10% 2700 - 3100 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2731GN-200M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 12dB gain, 200 Watts of pulsed RF

2731GN

Contextual Info: 2731GN-200M Rev 1 2731GN – 200M 200 Watts - 60 Volts, 200 s, 10% 2700 - 3100 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2731GN-200M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 12dB gain, 200 Watts of pulsed RF

C1f TRANSISTOR

Abstract: 200w Transistor rf transistor 200w QPP-025 class d 200w
Contextual Info: QPP-025 200W, 925-960MHz Class AB Power Stage QuikPAC Module Data General description: Features: The QPP-025 QuikPAC RF power module is an impedance matched Class AB amplifier stage designed for use in the output stage of linear RF power amplifiers for cellular base stations. The